BI-LEVEL LAMP BALLAST
    41.
    发明申请
    BI-LEVEL LAMP BALLAST 有权
    双水平灯泡

    公开(公告)号:US20120286682A1

    公开(公告)日:2012-11-15

    申请号:US13105095

    申请日:2011-05-11

    CPC classification number: H05B41/42 H05B37/0263

    Abstract: A bi-level lamp ballast to selectively operate two lamps is provided. The ballast includes a control circuit having an input, connected to a switching network, and an output, which provides a particular control signal based on the state of the switching network. The ballast also includes respective lamp control switches, each having respective outputs. The first switch is connected to the output and a ballast power supply. In its first state, it connects the ballast power supply to its first output, and in its second state, it connects the ballast power supply to its second output. The second switch is connected to the output and a ground. In its first state, it connects the ground to its first output, and in its second state, it connects the ground to its second output. The state of each lamp control switch depends on the control signal generated by the control circuit.

    Abstract translation: 提供了一种用于选择性地操作两个灯的双电平镇流器。 镇流器包括具有连接到开关网络的输入端和输出端的控制电路,该输出端基于开关网络的状态提供特定的控制信号。 镇流器还包括相应的灯控制开关,每个具有相应的输出。 第一个开关连接到输出和镇流器电源。 在其第一个状态下,它将镇流器电源连接到其第一个输出端,在其第二个状态下,将镇流器电源连接到其第二个输出端。 第二个开关连接到输出和地。 在其第一个状态下,它将地面连接到其第一个输出,而在第二个状态下,它将地面连接到其第二个输出。 每个灯控制开关的状态取决于控制电路产生的控制信号。

    MULTIPLE LIGHT LEVEL ELECTRONIC POWER CONVERTER
    42.
    发明申请
    MULTIPLE LIGHT LEVEL ELECTRONIC POWER CONVERTER 有权
    多光电子电力转换器

    公开(公告)号:US20120248983A1

    公开(公告)日:2012-10-04

    申请号:US13077063

    申请日:2011-03-31

    CPC classification number: H05B41/40 H05B41/42

    Abstract: A lighting system converter circuit of a lamp power converter to selectively operate a plurality of lamps connected thereto is provided. The lighting system converter circuit includes a first impedance circuit and a second impedance circuit. Each impedance circuit includes an input terminal, an impedance component, and a switching network. The impedance components are each configured to connect in series with the lamps. Each input terminal is configured to receive a control signal that indicates a state of a switch. Each control signal has a first logic level, indicating the switch is non-conductive, and a second logic level, indicating the switch is conductive. Each switching network is connected to its respective input terminal and in parallel with its respective impedance component, and is configured to selectively operate between a conductive state and a non-conductive state, as a function of the logic level of its respective control signal.

    Abstract translation: 提供了一种用于选择性地操作连接到其上的多个灯的灯功率转换器的照明系统转换器电路。 照明系统转换器电路包括第一阻抗电路和第二阻抗电路。 每个阻抗电路包括输入端子,阻抗部件和开关网络。 阻抗元件各自被配置为与灯串联。 每个输入端被配置为接收指示开关状态的控制信号。 每个控制信号具有第一逻辑电平,指示开关不导通,并且指示开关是导通的第二逻辑电平。 每个开关网络连接到其相应的输入端并与其相应的阻抗分量并联,并且被配置为根据其各自的控制信号的逻辑电平,在导通状态和非导通状态之间有选择地操作。

    Fast reroute for multiple label switched paths sharing a single interface
    43.
    发明授权
    Fast reroute for multiple label switched paths sharing a single interface 有权
    快速重路由多个标签交换路径共享一个接口

    公开(公告)号:US08077726B1

    公开(公告)日:2011-12-13

    申请号:US12391859

    申请日:2009-02-24

    Abstract: Techniques are described for maintaining a forwarding information base (FIB) within a packet-forwarding engine (PFE) of a router, and programming a packet-forwarding integrated circuit (IC) with a hardware version of the FIB. Entries of the hardware version identify primary forwarding next hops and backup forwarding next hops for the LSPs, wherein the packet-forwarding IC includes a control logic module and internal selector block configured to produce a value indicating a state of the first physical link. The selector block outputs one of the primary forwarding next hop and the backup forwarding next hop of the entries for forwarding the MPLS packets based on the value in response to the packet-processing engine addressing one of the entries of the FIB for the LSPs. Packets are forwarded with the PFE to the one of the primary forwarding next hop and the backup forwarding next hop output by the selector block.

    Abstract translation: 描述了用于在路由器的分组转发引擎(PFE)内维护转发信息库(FIB)的技术,并且利用FIB的硬件版本来编程分组转发集成电路(IC)。 硬件版本的条目识别LSP的主转发下一跳和后续转发,其中分组转发IC包括控制逻辑模块和内部选择器块,其被配置为产生指示第一物理链路的状态的值。 选择器块输出主要转发下一跳和用于转发MPLS分组的条目的备用转发下一跳,该响应于响应于分组处理引擎寻址用于LSP的FIB的条目中的一个的值。 分组与PFE一起转发到主转发下一跳和选择器块下一跳输出的备份转发。

    Methods for forming resistive switching memory elements
    44.
    发明授权
    Methods for forming resistive switching memory elements 有权
    形成电阻式开关存储元件的方法

    公开(公告)号:US07704789B2

    公开(公告)日:2010-04-27

    申请号:US11702967

    申请日:2007-02-05

    Abstract: Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

    Abstract translation: 提供电阻式开关存储器元件,其可以包含由无电金属形成的化学金属电极和金属氧化物。 电阻式开关存储器元件可以表现出双稳态,并且可以用于高密度多层存储器集成电路中。 诸如镍基材料的无电导电材料可以选择性地沉积在硅晶片或其它合适的衬底上的导体上。 无电导电材料可以被氧化以形成用于电阻式开关存储元件的金属氧化物。 可以沉积多层导电材料,每层具有不同的氧化速率。 可以利用导电层的差异氧化速率来确保在制造期间形成所需厚度的金属氧化物层。

    COMBINED BALLAST FOR FLUORESCENT LAMP AND LIGHT EMITTING DIODE AND METHOD OF DRIVING SAME
    45.
    发明申请
    COMBINED BALLAST FOR FLUORESCENT LAMP AND LIGHT EMITTING DIODE AND METHOD OF DRIVING SAME 失效
    用于荧光灯和发光二极管的组合电池及其驱动方法

    公开(公告)号:US20090200955A1

    公开(公告)日:2009-08-13

    申请号:US12029811

    申请日:2008-02-12

    CPC classification number: H05B35/00 H01J61/327 H05B41/2827

    Abstract: A circuit or combined ballast for driving a fluorescent lamp and at least one light emitting diode (LED) includes an integrated driver circuit having an alternating current (AC) circuit that includes at least one ballast coil for driving the fluorescent lamp and a direct current circuit for driving the LED having a secondary winding inductively coupled with the fluorescent lamp ballast coil for driving the LED. A method of driving a lamp assembly includes at least one fluorescent lamp and at least one light emitting diode (LED) and a combined driver circuit for supplying both the fluorescent lamp and the LED. The combined driver circuit supplies high voltage AC supply to a first portion of the driver circuit to the fluorescent lamp, supplies low voltage DC supply in a second portion of the driver circuit to the LED, and provides a secondary winding in the second portion of the driver circuit that is inductively coupled with a ballast coil in the first portion of the driver circuit that drives the fluorescent lamp.

    Abstract translation: 用于驱动荧光灯和至少一个发光二极管(LED)的电路或组合镇流器包括具有交流(AC)电路的集成驱动器电路,其包括用于驱动荧光灯的至少一个镇流器线圈和直流电路 用于驱动具有与用于驱动LED的荧光灯镇流器线圈感应耦合的次级绕组的LED。 驱动灯组件的方法包括至少一个荧光灯和至少一个发光二极管(LED)和用于提供荧光灯和LED两者的组合驱动电路。 组合的驱动器电路向驱动电路的第一部分提供高压AC电源到荧光灯,将驱动电路的第二部分中的低电压DC电源提供给LED,并且在第二部分中提供次级绕组 驱动电路,其与驱动电路的驱动电路的第一部分中的镇流器线圈感应耦合。

    Methods for coating a substrate with an amphiphilic compound
    47.
    发明申请
    Methods for coating a substrate with an amphiphilic compound 有权
    用两亲性化合物涂覆底物的方法

    公开(公告)号:US20090014846A1

    公开(公告)日:2009-01-15

    申请号:US12172110

    申请日:2008-07-11

    Abstract: Methods of modifying a patterned semiconductor substrate are presented including: providing a patterned semiconductor substrate surface including a dielectric region and a conductive region; and applying an amphiphilic surface modifier to the dielectric region to modify the dielectric region. In some embodiments, modifying the dielectric region includes modifying a wetting angle of the dielectric region. In some embodiments, modifying the wetting angle includes making a surface of the dielectric region hydrophilic. In some embodiments, methods further include applying an aqueous solution to the patterned semiconductor substrate surface. In some embodiments, the conductive region is selectively enhanced by the aqueous solution. In some embodiments, methods further include providing the dielectric region formed of a low-k dielectric material. In some embodiments, applying the amphiphilic surface modifier modifies an interaction of the low-k dielectric region with a subsequent process.

    Abstract translation: 提出了修改图案化半导体衬底的方法,包括:提供包括电介质区域和导电区域的图案化半导体衬底表面; 以及将两亲表面改性剂施加到所述电介质区域以改变所述电介质区域。 在一些实施例中,修改电介质区域包括改变电介质区域的润湿角度。 在一些实施例中,改变润湿角度包括使介电区域的表面成为亲水性。 在一些实施方案中,方法还包括将水溶液施加到图案化的半导体衬底表面。 在一些实施例中,导电区域被水溶液选择性地增强。 在一些实施例中,方法还包括提供由低k电介质材料形成的电介质区域。 在一些实施方案中,施加两亲表面改性剂修饰低k电介质区域与随后工艺的相互作用。

    Nonvolatile memory elements with metal-deficient resistive-switching metal oxides
    48.
    发明申请
    Nonvolatile memory elements with metal-deficient resistive-switching metal oxides 有权
    具有金属缺陷电阻开关金属氧化物的非易失性存储元件

    公开(公告)号:US20080219039A1

    公开(公告)日:2008-09-11

    申请号:US11714326

    申请日:2007-03-05

    Abstract: Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed by depositing a metal-containing material on a silicon-containing material. The metal-containing material may be oxidized to form a resistive-switching metal oxide. The silicon in the silicon-containing material reacts with the metal in the metal-containing material when heat is applied. This forms a metal silicide lower electrode for the nonvolatile memory element. An upper electrode may be deposited on top of the metal oxide. Because the silicon in the silicon-containing layer reacts with some of the metal in the metal-containing layer, the resistive-switching metal oxide that is formed is metal deficient when compared to a stoichiometric metal oxide formed from the same metal.

    Abstract translation: 提供具有电阻开关金属氧化物的非易失性存储元件。 非易失性存储元件可以通过将含金属的材料沉积在含硅材料上而形成。 含金属材料可以被氧化以形成电阻式开关金属氧化物。 当施加热量时,含硅材料中的硅与含金属材料中的金属反应。 这形成用于非易失性存储元件的金属硅化物下电极。 上部电极可以沉积在金属氧化物的顶部。 由于含硅层中的硅与含金属层中的一些金属反应,与由相同金属形成的化学计量的金属氧化物相比,形成的电阻 - 开关金属氧化物是金属缺陷的。

    SYSTEM AND COMPUTER NETWORK FOR KNOWLEDGE SEARCH AND ANALYSIS

    公开(公告)号:US20220180215A1

    公开(公告)日:2022-06-09

    申请号:US17540209

    申请日:2021-12-01

    Applicant: Nitin Kumar

    Inventor: Nitin Kumar

    Abstract: Described herein are technologies for overcoming technical problems associated with implementing a system for search and analysis of technical information over a computer network. For example, described herein are systems and methods for overcoming technical problems associated with implementing a system for search and analysis of scientific and engineering studies data over a computer network. With respect to some embodiments, described herein are technologies leveraging computer networking and a software architecture to overcome technical problems associated with implementing search and analysis systems for technical information.

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