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公开(公告)号：US07989354B2
公开(公告)日：2011-08-02
申请号：US12441754
申请日：2008-06-06
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： G03F7/405 , G03F7/0035 , H01L21/02164 , H01L21/0228 , H01L21/0271 , H01L21/0337 , H01L21/31144 , H01L21/32139
摘要： Disclosed is a patterning method including: forming a first film on a substrate; forming a first resist film on the first film; processing the first resist film into a first resist pattern having a preset pitch by photolithography; forming a silicon oxide film on the first resist pattern and the first film by alternately supplying a first gas containing organic silicon and a second gas containing an activated oxygen species to the substrate; forming a second resist film on the silicon oxide film; processing the second resist film into a second resist pattern having a preset pitch by the photolithography; and processing the first film by using the first resist pattern and the second resist pattern as a mask.
摘要翻译： 公开了一种图案化方法，包括：在基板上形成第一膜; 在第一膜上形成第一抗蚀剂膜; 通过光刻将第一抗蚀剂膜加工成具有预设间距的第一抗蚀剂图案; 通过将含有有机硅的第一气体和含有活性氧的第二气体交替地供给到所述基板上，在所述第一抗蚀剂图案和所述第一膜上形成氧化硅膜; 在氧化硅膜上形成第二抗蚀剂膜; 通过光刻将第二抗蚀剂膜加工成具有预设间距的第二抗蚀剂图案; 以及通过使用第一抗蚀剂图案和第二抗蚀剂图案作为掩模来处理第一膜。
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42.发明申请公开(公告)号：US20090253258A1
公开(公告)日：2009-10-08
申请号：US12405644
申请日：2009-03-17
IPC分类号： H01L21/283 , B05B13/02
CPC分类号： H01L21/288 , C23C18/1628 , H01L21/76849
摘要： A plated film having a uniform film thickness is formed on a surface of a substrate. A semiconductor manufacturing apparatus includes: a holding mechanism for holding a substrate rotatably; a nozzle for supplying a processing solution for performing a plating process on a processing target surface of the substrate; a substrate rotating mechanism for rotating the substrate held by the holding mechanism in a direction along the processing target surface; a nozzle driving mechanism for moving the nozzle in a direction along the processing target surface at a position facing the processing target surface of the substrate held by the holding mechanism; and a control unit for controlling the supply of the processing solution by the nozzle and the movement of the nozzle by the nozzle driving mechanism.
摘要翻译： 在基板的表面上形成具有均匀膜厚的镀膜。 半导体制造装置包括：可旋转地保持基板的保持机构; 用于向所述基板的处理目标表面供给用于进行电镀处理的处理液的喷嘴; 基板旋转机构，用于沿着所述处理对象表面的方向旋转由所述保持机构保持的所述基板; 喷嘴驱动机构，用于沿着与所述保持机构保持的所述基板的处理对象面对置的位置沿着所述处理对象面的方向移动所述喷嘴; 以及控制单元，用于控制由喷嘴供应处理溶液和通过喷嘴驱动机构移动喷嘴。
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公开(公告)号：US20070134431A1
公开(公告)日：2007-06-14
申请号：US11606930
申请日：2006-12-01
CPC分类号： H01L21/68728 , C23C18/1619 , C23C18/1628 , H01L21/6715 , H01L21/6723
摘要： An electroless plating apparatus performs electroless plating on a wiring portion with a plating solution using a reducer having low reduction power. The electroless plating apparatus includes a support member with a conductive portion, which supports a substrate; a plating-solution feeding mechanism which feeds the plating solution to a top surface of the substrate supported by the support member; a metal member which is provided at the support member in such a way as to be contactable to the plating solution and dissolves into the plating solution when in contact therewith to thereby generate electrons; and an electron supply passage which supplies the electrons generated by the dissolved metal member to the wiring portion on the substrate via the conductive portion of the support member.
摘要翻译： 无电解电镀装置使用具有低还原能力的还原剂在具有电镀液的布线部分上进行无电镀。 无电解电镀装置包括：支撑构件，其具有导电部分，其支撑基板; 电镀液供给机构，其将所述电镀液供给到由所述支撑部件支撑的所述基板的上表面; 金属构件，其设置在所述支撑构件上，以便能够与所述电镀液接触，并且在与所述电镀液接触时溶解到所述电镀液中，从而产生电子; 以及电子供给路径，其经由所述溶解金属构件产生的电子经由所述支撑构件的导电部向所述基板上的配线部供给。
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公开(公告)号：US20150232994A1
公开(公告)日：2015-08-20
申请号：US14129698
申请日：2012-06-04
CPC分类号： C23C18/163 , C23C18/1619 , C23C18/1632 , C23C18/1655 , C23C18/1669 , C23C18/1675 , C23C18/1676 , C23C18/168 , C23C18/18 , C23C18/50 , H05K3/187 , H05K2203/0165 , H05K2203/072 , H05K2203/075
摘要： A plating apparatus can perform a plating process on an entire surface of a substrate uniformly. A plating apparatus 20 includes a substrate holding/rotating device 110 configured to hold and rotate a substrate 2; a discharging device 21 configured to discharge a plating liquid toward the substrate 2 held on the substrate holding/rotating device 110; and a controller 160 configured to control the substrate holding/rotating device 110 and the discharging device 21. Further, the discharging device 21 includes a first nozzle 40 having a multiple number of discharge openings 41 arranged in a radial direction of the substrate 2 or having a discharge opening 42 extended in the radial direction of the substrate 2; and a second nozzle 45 having a discharge opening 46 configured to be positioned closer to a central portion of the substrate 2 than the discharge opening of the first nozzle 40.
摘要翻译： 电镀装置可以均匀地对基板的整个表面进行电镀处理。 电镀装置20包括被配置为保持和旋转衬底2的衬底保持/旋转装置110; 排出装置21，被配置为将电镀液体朝向保持在基板保持旋转装置110上的基板2排出; 以及配置为控制基板保持/旋转装置110和排出装置21的控制器160.此外，排出装置21包括：第一喷嘴40，其具有沿基板2的径向配置的多个排出口41，或具有 沿基板2的径向延伸的排出口42; 以及第二喷嘴45，其具有被配置为比第一喷嘴40的排出口更靠近基板2的中心部分的排出口46。
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公开(公告)号：US20140134345A1
公开(公告)日：2014-05-15
申请号：US14129623
申请日：2012-06-04
CPC分类号： B05C5/001 , B05D1/02 , C23C18/1619 , C23C18/1669 , C23C18/1676 , C23C18/168
摘要： A plating apparatus of performing a plating process by supplying a plating liquid onto a substrate includes a substrate holding/rotating device configured to hold and rotate the substrate; a discharging device configured to discharge the plating liquid toward the substrate; a plating liquid supplying device configured to supply the plating liquid to the discharging device; and a controller configured to control the discharging device and the plating liquid supplying device. Further, the discharging device includes a first nozzle having a discharge opening, and a second nozzle having a discharge opening configured to be positioned closer to a central portion of the substrate than the discharge opening of the first nozzle. Furthermore, the plating liquid supplying device is configured to set a temperature of the plating liquid supplied to the first nozzle to be higher than a temperature of the plating liquid supplied to the second nozzle.
摘要翻译： 通过将电镀液体供给到基板上进行电镀处理的电镀装置包括：基板保持旋转装置，其构造成保持和旋转基板; 排出装置，被配置为将所述电镀液体朝向所述基板排出; 电镀液供给装置，其配置为将电镀液体供给到排出装置; 以及控制器，其被配置为控制所述排出装置和所述电镀液供给装置。 此外，排出装置包括具有排出口的第一喷嘴和具有排出口的第二喷嘴，其被配置为比第一喷嘴的排出口更靠近基板的中心部分。 此外，电镀液供给装置被配置为将供给到第一喷嘴的电镀液的温度设定为高于供给到第二喷嘴的电镀液的温度。
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公开(公告)号：US08691497B2
公开(公告)日：2014-04-08
申请号：US13499362
申请日：2010-08-20
IPC分类号： G03F7/40
CPC分类号： G03F7/3021 , G03F7/405 , H01L21/6715
摘要： A developing treatment method includes: a treatment solution supplying step of supplying a treatment solution made by diluting a hydrophobizing agent hydrophobizing a resist pattern with hydrofluoroether onto a substrate on which a rinse solution has been supplied after development of the resist pattern; a hydrophobic treatment stabilizing step of stabilizing a hydrophobic treatment of the resist pattern with the supply of the treatment solution stopped and rotation of the substrate almost stopped; and a treatment solution removing step of removing the treatment solution from a top of the substrate on which the treatment solution has been supplied. The hydrophobizing agent is trimethylsilyldimethyl-amine.
摘要翻译： 显影处理方法包括：处理溶液供给步骤，通过在形成抗蚀剂图案后，向其上提供了冲洗溶液供给的基板上，将通过将氢氟醚疏水化的疏水化剂稀释而成的处理液供给; 疏水性处理稳定化步骤，在停止供给处理液的同时稳定抗蚀剂图案的疏水处理，并且基板的旋转几乎停止; 以及从已经供给了处理液的基板的顶部除去处理液的处理液除去工序。 疏水化剂是三甲基甲硅烷基二甲基胺。
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47.发明申请Substrate Processing Apparatus, Substrate Processing Method, and Storage Medium 有权基板处理装置，基板处理方法和存储介质公开(公告)号：US20120132230A1
公开(公告)日：2012-05-31
申请号：US13301936
申请日：2011-11-22
CPC分类号： H01L21/67051 , B08B3/04 , H01L21/02101 , H01L21/67017 , H01L21/6719
摘要： Disclosed is a substrate processing apparatus including a processing vessel in which a target substrate W is processed by using a high-pressure fluid in a supercritical state or a subcritical state, and pipes that are divided into a first pipe member and a second pipe member in a flowing direction of the fluid and circulate the fluid are connected to processing vessel. A connecting/disconnecting mechanism moves at least one of first and second pipe members between a connection position and a separation position of first pipe member and the second pipe member, and opening/closing valves are installed in each of first and second pipe members and are closed at the time of separating pipe members.
摘要翻译： 公开了一种基板处理装置，其包括处理容器，其中通过使用超临界状态或亚临界状态的高压流体处理目标基板W，以及分割成第一管构件和第二管构件的管 流体的流动方向和流体循环连接到处理容器。 连接/断开机构将第一和第二管件中的至少一个移动到第一管件和第二管件之间的连接位置和分离位置之间，并且开/关阀安装在第一和第二管件中的每一个中，并且 在分离管件时关闭。
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公开(公告)号：US20100112796A1
公开(公告)日：2010-05-06
申请号：US12441741
申请日：2008-06-06
申请人： Pao-Hwa Chou , Kazuhide Hasebe , Shigeru Nakajima , Yasushi Akasaka , Mitsuaki Iwashita , Reiji Niino
发明人： Pao-Hwa Chou , Kazuhide Hasebe , Shigeru Nakajima , Yasushi Akasaka , Mitsuaki Iwashita , Reiji Niino
IPC分类号： H01L21/28 , H01L21/3213
CPC分类号： H01L21/3086 , H01L21/0337 , H01L21/3088 , H01L21/32139 , H01L29/66795
摘要： Disclosed is a patterning method including: forming, on a thin film, a sacrificial film made of a material different from that of the thin film and made of SiBN; processing the sacrificial film into a pattern having a preset interval by using a photolithography technique; forming, on sidewalls of the processed sacrificial film, sidewall spacers made of a material different from those of the sacrificial film and the thin film; removing the processed sacrificial film; and processing the thin film by using the sidewall spacers as a mask.
摘要翻译： 公开了一种图案化方法，包括：在薄膜上形成由与SiBN不同的材料制成的牺牲膜; 通过使用光刻技术将牺牲膜处理成具有预设间隔的图案; 在加工的牺牲膜的侧壁上形成由与牺牲膜和薄膜不同的材料制成的侧壁间隔物; 去除加工的牺牲膜; 以及通过使用侧壁间隔件作为掩模来处理薄膜。
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公开(公告)号：US20100112496A1
公开(公告)日：2010-05-06
申请号：US12441007
申请日：2008-06-06
IPC分类号： G03F7/20
CPC分类号： H01L21/3086 , G03F7/40 , H01L21/02164 , H01L21/02219 , H01L21/02274 , H01L21/3088 , H01L21/31608
摘要： A patterning method comprises a step for forming a first film on a substrate, a step for forming a multilayer film including a resist film on the first film, a step for patterning the resist film by photolithography to form a patterned resist film having a predetermined pattern, a step for forming an silicon oxide film different from the first film on the patterned resist film and the first film by supplying a first gas containing an organic silicon and a second gas containing an activated oxygen species alternately to the substrate, a step for etching the silicon oxide film to form a sidewall spacer on the sidewall of the patterned resist film, a step for removing the patterned resist film, and a step for processing the first film by using the sidewall spacer as a mask.
摘要翻译： 图案化方法包括在基板上形成第一膜的步骤，用于在第一膜上形成包括抗蚀剂膜的多层膜的步骤，通过光刻图案化抗蚀剂膜以形成具有预定图案的图案化抗蚀剂膜的步骤 通过将含有有机硅和含有活性氧的第二气体的第一气体交替地供给到基板上，在图案化的抗蚀剂膜和第一膜上形成与第一膜不同的氧化硅膜的步骤，蚀刻步骤 氧化硅膜在图案化的抗蚀剂膜的侧壁上形成侧壁间隔物，去除图案化的抗蚀剂膜的步骤，以及通过使用侧壁间隔物作为掩模来处理第一膜的步骤。
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公开(公告)号：US20100062159A1
公开(公告)日：2010-03-11
申请号：US12405468
申请日：2009-03-17
申请人： Takashi Tanaka , Yusuke Saito , Mitsuaki Iwashita
发明人： Takashi Tanaka , Yusuke Saito , Mitsuaki Iwashita
IPC分类号： B05D3/04
CPC分类号： C23C18/1628 , C23C18/1632 , C23C18/1678 , C23C18/1682 , C23C18/31 , C23C18/38
摘要： A cap metal forming method capable of obtaining a uniform film thickness on the entire surface of a substrate is provided. A method for forming a cap metal on a processing surface of a substrate provided with two or more regions having different water-repellent properties, includes: holding the substrate horizontally by a rotatable holding mechanism installed in an inner chamber; supplying a gas between the inner chamber and an outer chamber covering the inner chamber via a gas supply hole provided in a top surface of the outer chamber; forming a pressure gradient between the inner chamber and the outer chamber; and supplying a plating solution to a preset position on the processing surface of the substrate after a pressure of the gas inside the inner chamber reaches a preset value so as to form the cap metal on at least one of the regions.
摘要翻译： 提供能够在基板的整个表面上获得均匀的膜厚度的盖金属成形方法。 一种在具有不同斥水性的两个以上的区域的基板的加工面上形成盖金属的方法，其特征在于，包括：通过安装在内室中的旋转保持机构水平地保持基板; 通过设置在所述外室的上表面中的气体供给孔，在所述内室和覆盖所述内室的外室之间供给气体; 在所述内室和所述外室之间形成压力梯度; 以及在所述内室中的气体的压力达到预设值之后，将所述电镀溶液供应到所述基板的处理表面上的预定位置，以便在所述至少一个所述区域上形成所述盖金属。
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