Abstract:
An apparatus for presenting an image for a heads-up display includes three arrays of light-emitting diodes, wherein the light-emitting diodes of an array are arranged and output electromagnetic beams in an emission direction of an emission side of the array, the light-emitting diodes output an electromagnetic beam with a first opening angle in the emission direction, a collimation apparatus provided on the emission side at a specified spacing in front of the array of the light-emitting diodes, wherein the collimation apparatus reduces the first opening angles of the beams of the light-emitting diodes downstream of the collimation apparatus in the emission direction to a second opening angle, the second opening angle is smaller than the first opening angle, and a combination optical unit arranged downstream of the collimation apparatus in the emission direction, the combination optical unit superposes the electromagnetic rays from the three arrays to form an image for the head-up display.
Abstract:
An optoelectronic component includes a housing including a base section and a cover section that delimit an interior of the housing, wherein an optoelectronic semiconductor chip is arranged on the base section, the cover section is formed by an optical element, and a reflective element including openings is arranged between the optoelectronic semiconductor chip and an outer side of the optical element.
Abstract:
A method proposed for manufacturing a radiation-emitting component in which a field distribution of a near field in a direction perpendicular to a main emission axis of the component is specified. From the field distribution of the near field, an index of refraction profile along this direction is determined. A structure is determined for the component such that the component will have the previously determined index of refraction profile. The component is constructed according to the previously determined structure. A radiation-emitting component is also disclosed.
Abstract:
A light-emitting diode includes at least one light-emitting diode chip, a carrier for the at least one light-emitting diode chip, and at least one control device integrated into the carrier, wherein each of the light-emitting diode chips is electrically connected to one of the at least one control devices, each of the at least one control devices includes a data storage device in which brightness data for each light-emitting diode chip which is connected to the control device is stored, and the control device drives the connected light-emitting diode chip with a current which is selected according to stored brightness data for the light-emitting diode chip.
Abstract:
An optoelectronic apparatus includes an optical device with an optical structure including a plurality of optical elements and a concentrator which is a hollow body having a reflective inner area, and a radiation-emitting or radiation-receiving semiconductor chip with a contact structure including a plurality of contact elements that make electrical contact with the semiconductor chip and are spaced apart vertically from the optical structure, wherein the contact elements are arranged in interspaces between the optical elements upon projection of the contact structure into a plane of the optical structure, wherein the concentrator has an aperture on a side facing the semiconductor chip that is smaller than a side facing away from the semiconductor chip, and the optical structure is arranged on a side of the concentrator facing the semiconductor chip.
Abstract:
An optoelectronic device, in particular a display device, comprises: at least one optoelectronic light source, an at least partially transparent front layer, an at least partially transparent support layer, wherein the light source is arranged between the front layer and the support layer, wherein a front side of the light source faces the front layer and a rear side of the light source faces the support layer, and wherein a limiting device is provided in a circumferential direction around the light source, wherein the limiting device limits a spatial region, in which the light source emits light such that total internal reflection of the emitted light, in particular at an interface between the front layer and the outside, is avoided or at least reduced.
Abstract:
A laser device comprises a carrier, an optoelectronic component provided on the carrier, said component being designed to emit laser radiation, and an optical element designed to form the laser radiation emitted by the optoelectronic component, wherein: the optical element has a first layer that is at least partially transparent to the laser radiation, with a first refractive index, and a second layer that is at least partially transparent to the laser radiation, with a second refractive index; the first layer being applied to the optoelectronic component and having a surface with an imprinted structure; and the second layer is applied to the first layer, on the surface (24) having the imprinted structure.
Abstract:
The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.
Abstract:
The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.
Abstract:
A radiation-emitting semiconductor arrangement includes at least one semiconductor body having an active region that generates a primary radiation, and includes a radiation conversion element, wherein the radiation conversion element converts the primary radiation at least partially into a secondary radiation during operation of the semiconductor arrangement, the radiation conversion element emits the secondary radiation at a narrow angle, the radiation conversion element emits the secondary radiation into a projected spatial angle of not more than π/5, and the semiconductor arrangement includes an optical deflector movable during operation of the semiconductor arrangement.