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公开(公告)号：US08658463B2
公开(公告)日：2014-02-25
申请号：US13562063
申请日：2012-07-30
IPC分类号： H01L21/00 , H01L21/16 , H01L21/20 , H01L47/00 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/1266 , H01L45/145 , H01L45/146 , H01L45/1633
摘要： A method of making a memristor having an embedded switching layer include exposing a surface portion of a first electrode material within a via to a reactive species to form the switching layer embedded within and at surface of the via. The via is in contact with a first conductor trace. The method further includes depositing a layer of a second electrode material adjacent to the via surface and patterning the layer into a column aligned with the via. The method further includes depositing an interlayer dielectric material to surround the column and providing a second conductor trace in electrical contact with the second electrode material of the column.
摘要翻译： 制造具有嵌入式切换层的忆阻器的方法包括将通孔内的第一电极材料的表面部分暴露于反应性物质，以形成嵌入通孔内和表面的开关层。 通孔与第一导体迹线接触。 该方法还包括沉积与通孔表面相邻的第二电极材料层，并将该层图案化成与通孔对齐的列。 该方法还包括沉积层间绝缘材料以围绕该柱并提供与该柱的第二电极材料电接触的第二导体迹线。
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公开(公告)号：US20130168629A1
公开(公告)日：2013-07-04
申请号：US13821173
申请日：2010-09-16
申请人： Gilberto Ribeiro , Janice H. Nickel , Jianhua Yang
发明人： Gilberto Ribeiro , Janice H. Nickel , Jianhua Yang
IPC分类号： H01L45/00
CPC分类号： H01L45/1233 , H01L27/2463 , H01L45/08 , H01L45/1246 , H01L45/146 , H01L45/148 , H01L45/1641
摘要： A nanoscale switching device comprises a first electrode of a nanoscale width; a second electrode of a nanoscale width; an active region disposed between the first and second electrodes, the active region containing a switching material; an area within the active region that constrains current flow between the first electrode and the second electrode to a central portion of the active region; and an interlayer dielectric layer formed of a dielectric material and disposed between the first and second electrodes outside the active region. A nanoscale crossbar array and method of forming the nanoscale switching device are also disclosed.
摘要翻译： 纳米级切换装置包括纳米级宽度的第一电极; 纳米级宽度的第二电极; 设置在所述第一和第二电极之间的有源区，所述有源区包含开关材料; 所述有源区域内的区域将所述第一电极和所述第二电极之间的电流约束到所述有源区域的中心部分; 以及由电介质材料形成并且设置在有源区域外的第一和第二电极之间的层间电介质层。 还公开了一种形成纳米尺度开关器件的纳米尺度交叉列阵列和方法。
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公开(公告)号：US20120081945A1
公开(公告)日：2012-04-05
申请号：US12896641
申请日：2010-10-01
申请人： Jianhua Yang , John Paul Strachan , Wei Wu , Janice H. Nickel
发明人： Jianhua Yang , John Paul Strachan , Wei Wu , Janice H. Nickel
CPC分类号： H01L27/101 , G11C7/12 , G11C7/18 , G11C13/0007 , G11C13/0023 , G11C13/0033
摘要： A memory array with graded resistance lines includes a first set of lines intersecting a second set of lines. A line from one of the sets of lines includes a graded resistance along a length of the line.
摘要翻译： 具有分级电阻线的存储器阵列包括与第二组线相交的第一组线。 来自一组线路的线包括沿着该线的长度的分级电阻。
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44.发明授权Magnetic memory devices having patterned heater layers therein that utilize thermally conductive sidewall materials to increase heat transfer when writing memory data 有权其中具有图案化加热器层的磁存储器件利用导热侧壁材料来增加写入存储器数据时的热传递公开(公告)号：US07397077B2
公开(公告)日：2008-07-08
申请号：US10934922
申请日：2004-09-02
申请人： Janice H. Nickel
发明人： Janice H. Nickel
IPC分类号： H01L21/336 , H01L21/00 , G11C11/14
CPC分类号： H01L27/222 , H01L43/08 , H01L43/12
摘要： An aspect of the present invention is a thin film device. The thin film device includes at least one patterned thin film layer, a thermally conductive material coupled to at least one of the patterned thin-film layer and an electrically and thermally isolating material in contact with the thermally conductive material.
摘要翻译： 本发明的一个方面是薄膜装置。 薄膜器件包括至少一个图案化薄膜层，耦合到图案化薄膜层中的至少一个和与导热材料接触的电气和隔热材料的导热材料。
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45.发明授权RF field heated diodes for providing thermally assisted switching to magnetic memory elements 有权RF场加热二极管，用于向磁存储元件提供热辅助切换公开(公告)号：US07397074B2
公开(公告)日：2008-07-08
申请号：US11034418
申请日：2005-01-12
申请人： Janice H. Nickel
发明人： Janice H. Nickel
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113
CPC分类号： G11C11/16 , G11C11/1675 , H01L27/224
摘要： An exemplary array of thermally-assisted magnetic memory structures includes a plurality of magnetic memory elements, each magnetic memory element being near a diode. A diode near a selected magnetic memory element can be heated by absorbing energy from a radio frequency electromagnetic field. The heated diode can be used to elevate the temperature of the selected magnetic memory element to thermally assist in switching the magnetic state of the magnetic memory element upon application of a write current.
摘要翻译： 热辅助磁存储结构的示例性阵列包括多个磁存储元件，每个磁存储元件靠近二极管。 可以通过从射频电磁场吸收能量来加热选定的磁存储元件附近的二极管。 加热的二极管可用于升高所选择的磁存储元件的温度，以便在施加写入电流时热辅助切换磁存储元件的磁状态。
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公开(公告)号：US07054119B2
公开(公告)日：2006-05-30
申请号：US10463930
申请日：2003-06-18
申请人： Manish Sharma , Janice H. Nickel
发明人： Manish Sharma , Janice H. Nickel
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , G11C11/15 , H01F10/3254 , H01F10/3263 , H01F10/3272 , H01F41/303 , H01L43/08 , Y10T29/49034
摘要： A coupled ferromagnetic structure includes a first ferromagnetic layer, a spacer layer on a first surface of the first ferromagnetic layer, and a second ferromagnetic layer on the spacer layer. Interlayer exchange coupling occurs between the first and second ferromagnetic layers. The coupling may be ferromagnetic or antiferromagnetic. Morphology of the first surface is modified to tailor the interlayer exchange coupling. The structure may form a part of a magnetoresistive device such as a magnetic tunnel junction.
摘要翻译： 耦合的铁磁结构包括第一铁磁层，第一铁磁层的第一表面上的间隔层和间隔层上的第二铁磁层。 层间交换耦合发生在第一和第二铁磁层之间。 耦合可以是铁磁性或反铁磁性的。 第一表面的形态被修改以定制层间交换耦合。 该结构可以形成诸如磁性隧道结的磁阻器件的一部分。
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公开(公告)号：US06928042B2
公开(公告)日：2005-08-09
申请号：US09900662
申请日：2001-07-06
申请人： Janice H. Nickel
发明人： Janice H. Nickel
CPC分类号： G11C13/025 , B82Y10/00 , G11B9/14 , G11B9/1409 , G11B9/1418 , G11B20/10 , G11C13/0004 , G11C2213/81 , Y10S977/943
摘要： A data storage device includes a phase-change storage layer and an array of nanotubes as electron sources.
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公开(公告)号：US06927995B2
公开(公告)日：2005-08-09
申请号：US10449261
申请日：2003-05-30
CPC分类号： H01L43/08 , G11C11/15 , G11C11/16 , G11C11/5607 , G11C2211/5615 , G11C2211/5616
摘要： A magnetic memory cell includes a first magneto-resistive device and a second magneto-resistive device. The first magneto-resistive device has a first sense layer. The second magneto-resistive device is connected in series with the first magneto-resistive device. The second magneto-resistive device has a second sense layer. At least one controlled nucleation site is placed on at least one of the first sense layer and the second sense layer.
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49.发明授权公开(公告)号：US06905888B2
公开(公告)日：2005-06-14
申请号：US10676414
申请日：2003-09-30
IPC分类号： G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L21/00
摘要： A ferromagnetic data layer of a magnetic memory element is formed with a controlled nucleation site. In some embodiments, the nucleation site may be a divot in the data layer or a protrusion from the data layer. A Magnetic Random Access Memory (“MRAM”) device may include an array of magnetic memory elements having data layers with controlled nucleation sites.
摘要翻译： 磁记忆元件的铁磁数据层形成有受控的成核位点。 在一些实施方案中，成核位点可以是数据层中的裂缝或来自数据层的突起。 磁性随机存取存储器（“MRAM”）器件可以包括具有受控成核位点的数据层的磁存储元件阵列。
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50.发明授权公开(公告)号：US06803616B2
公开(公告)日：2004-10-12
申请号：US10173195
申请日：2002-06-17
IPC分类号： H01L2976
摘要： A ferromagnetic data layer of a magnetic memory element is formed with a controlled nucleation site. The controlled nucleation sites improve the switching distribution of the magnetic memory elements, which increases reliability of writing to the magnetic memory elements. A Magnetic Random Access Memory (MRAM) device may include an array of such magnetic memory elements.
摘要翻译： 磁记忆元件的铁磁数据层形成有受控的成核位点。 受控的成核位点改善了磁存储元件的开关分布，这增加了写入磁存储元件的可靠性。 磁性随机存取存储器（MRAM）装置可以包括这种磁存储元件的阵列。
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