公开(公告)号：US20230072487A1

公开(公告)日：2023-03-09

申请号：US17676905

申请日：2022-02-22

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Won HAN ,  Hwa Sun LEE ,  Moon Chul LEE ,  Jeong Hoon RYOU ,  Tae Yoon KIM ,  Sang Kee YOON ,  Yong Suk KIM ,  Joung Hun KIM ,  Tae Kyung LEE ,  Jae Hyoung GIL

IPC: H03H9/02 ,  H03H3/04 ,  H03H9/17

Abstract: A bulk acoustic wave resonator is provided. The bulk acoustic wave resonator includes a board; a resonant portion including a first electrode, a piezoelectric layer, and a second electrode, and disposed on the board, and a temperature compensation layer disposed on the resonant portion, wherein the temperature compensation layer includes a temperature compensation portion formed of a dielectric and a loss compensation portion formed of a material different from a material of the temperature compensation portion, and wherein each of the temperature compensation portion and the loss compensation portion includes a plurality of linear patterns, and the linear patterns of the temperature compensation portion and the linear patterns of the loss compensation portion are alternately disposed.

公开(公告)号：US20210075396A1

公开(公告)日：2021-03-11

申请号：US16939344

申请日：2020-07-27

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Chang Hyun LIM ,  Tae Hun LEE ,  Yong Suk KIM ,  Moon Chul LEE ,  Sang Kee YOON

IPC: H03H9/13 ,  H03H9/05 ,  H03H9/10 ,  H03H9/17 ,  H03H9/56

Abstract: A bulk acoustic resonator includes: a substrate; a first electrode disposed on the substrate; a piezoelectric layer disposed to cover at least a portion of the first electrode; a second electrode disposed to cover at least a portion of the piezoelectric layer; and an insertion layer disposed below a partial region of the piezoelectric layer. A thickness of the first electrode in an active region in which the first electrode, the piezoelectric layer, and the second electrode overlap one another is less than a thickness of a region outside the active region. An angle of inclination of an internal side surface of the insertion layer is different from an angle of inclination of an external side surface of the insertion layer.

公开(公告)号：US20200373899A1

公开(公告)日：2020-11-26

申请号：US16989129

申请日：2020-08-10

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung LEE ,  Tae Yoon KIM ,  Sang Kee YOON ,  Chang Hyun LIM ,  Jong Woon KIM ,  Moon Chul LEE

IPC: H03H9/02 ,  H03H9/54 ,  H03H9/17 ,  H03H9/13 ,  H01L41/053 ,  H01L41/29 ,  H01L41/31 ,  H03H3/02

Abstract: An acoustic wave resonator includes a resonating part disposed on and spaced apart from a substrate by a cavity, the resonating part including a membrane layer, a first electrode, a piezoelectric layer, and a second electrode that are sequentially stacked. 0 Å≤ΔMg≤170 Å may be satisfied, ΔMg being a difference between a maximum thickness and a minimum thickness of the membrane layer disposed in the cavity.

公开(公告)号：US20200169246A1

公开(公告)日：2020-05-28

申请号：US16435621

申请日：2019-06-10

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Yoon KIM ,  Tae Kyung LEE ,  Sang Kee YOON ,  Sung Jun LEE ,  Chang Hyun LIM ,  Nam Jung LEE ,  Tae Hun LEE ,  Moon Chul LEE

IPC: H03H9/17 ,  H03H9/13 ,  H03H9/02

Abstract: An acoustic resonator includes a substrate, an insulation layer disposed on the substrate, a resonating portion disposed on the insulation layer and having a first electrode, a piezoelectric layer, and a second electrode, stacked thereon, a cavity disposed between the insulation layer and the resonating portion, a protruded portion having a plurality of protrusions disposed on a lower surface of the cavity, and a hydrophobic layer disposed on an upper surface of the cavity and a surface of the protruded portion.

公开(公告)号：US20200091888A1

公开(公告)日：2020-03-19

申请号：US16356164

申请日：2019-03-18

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Hun LEE ,  Tae Yoon KIM ,  Moon Chul LEE ,  Chang Hyun LIM ,  Nam Jung LEE ,  Il Han LEE

IPC: H03H9/02 ,  H03H9/17 ,  H03H3/02

Abstract: A bulk-acoustic wave resonator includes a substrate, a first layer, a second layer, a membrane layer, and a resonance portion. The substrate includes a substrate protection layer. The first layer is disposed on the substrate protection layer. The second layer is disposed outside of the first layer. The membrane layer forms a cavity with the substrate protection layer and the first layer. The resonance portion is disposed on the membrane layer. Either one or both of the substrate protection layer and the membrane layer includes a protrusion disposed in the cavity.

公开(公告)号：US20180294792A1

公开(公告)日：2018-10-11

申请号：US15876791

申请日：2018-01-22

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Moon Chul LEE ,  Tah Joon PARK ,  Jae Chang LEE ,  Tae Yoon KIM ,  Chang Hyun LIM ,  Hwa Sun LEE ,  Tae Hun LEE ,  Hyun Min HWANG ,  Tae Kyung LEE

IPC: H03H9/02 ,  H03H9/60

Abstract: A bulk acoustic wave (BAW) resonator includes: a substrate; a first BAW resonator including a first air cavity disposed in the substrate, and further including a first electrode, a first piezoelectric layer, and a second electrode stacked on the first air cavity; a second BAW resonator including a second air cavity disposed in the substrate, and further including a first electrode, a second piezoelectric layer, and a second electrode stacked on the second air cavity, wherein the second BAW resonator is connected in parallel to the first BAW resonator and has polarities that are opposite of polarities of the first BAW resonator; and a compensation capacitor circuit connected between the first BAW resonator and the second BAW resonator.

公开(公告)号：US20180278230A1

公开(公告)日：2018-09-27

申请号：US15788062

申请日：2017-10-19

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung LEE ,  Tae Yoon KIM ,  Sang Kee YOON ,  Chang Hyun LIM ,  Jong Woon KIM ,  Moon Chul LEE

IPC: H03H9/02 ,  H03H9/54 ,  H03H9/17 ,  H03H9/13 ,  H03H3/02 ,  H01L41/053 ,  H01L41/29 ,  H01L41/31

Abstract: An acoustic wave resonator includes a resonating part disposed on and spaced apart from a substrate by a cavity, the resonating part including a membrane layer, a first electrode, a piezoelectric layer, and a second electrode that are sequentially stacked. 0 Å≤ΔMg≤170 Å may be satisfied, ΔMg being a difference between a maximum thickness and a minimum thickness of the membrane layer disposed in the cavity.

公开(公告)号：US20180102751A1

公开(公告)日：2018-04-12

申请号：US15702176

申请日：2017-09-12

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Chang Hyun LIM ,  Won HAN ,  Moon Chul LEE ,  Tae Kyung LEE

IPC: H03H3/04 ,  H03H9/13 ,  H03H9/17

CPC classification number: H03H3/04 ,  H03H9/02118 ,  H03H9/132 ,  H03H9/173 ,  H03H9/174 ,  H03H9/547 ,  H03H2003/021 ,  H03H2003/023 ,  H03H2003/0442 ,  H03H2009/02173

Abstract: A bulk-acoustic wave resonator includes: a membrane layer disposed on a substrate and forming a cavity; a lower electrode disposed on the membrane layer; a piezoelectric layer disposed on the lower electrode; an upper electrode disposed on the piezoelectric layer, and including a frame part disposed at an edge of an active area and having a thickness greater than that of a portion of the upper electrode disposed in a central portion of the active area; and a frequency adjusting layer disposed on the piezoelectric layer and the upper electrode. The frequency adjusting layer is excluded from an inclined surface of the frame part, or a thickness of a portion of the frequency adjusting layer on the inclined surface is less than that of other portions of the frequency adjusting layer. The frequency adjusting layer is disposed on a portion of the piezoelectric layer protruding from the upper electrode.

公开(公告)号：US20180062620A1

公开(公告)日：2018-03-01

申请号：US15462110

申请日：2017-03-17

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung LEE ,  Yong Jin KANG ,  Moon Chul LEE ,  Jae Hyoung GIL ,  Chang Hyun LIM ,  Tae Yoon KIM

IPC: H03H9/60 ,  H03H9/54 ,  H01L41/047

CPC classification number: H03H9/60 ,  H01L41/0477 ,  H03H3/02 ,  H03H9/547

Abstract: A bulk-acoustic wave filter device includes: a lower electrode layer disposed on the substrate; a bonding part disposed on the lower electrode layer, at an edge of the substrate; a ground part spaced apart from the bonding part; and a flow suppressing part disposed between the bonding part and the ground part, and offset with respect to the bonding part and the ground part.

公开(公告)号：US20170244021A1

公开(公告)日：2017-08-24

申请号：US15271483

申请日：2016-09-21

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Won HAN ,  Dae Hun JEONG ,  Jae Chang LEE ,  Tae Yoon KIM ,  Moon Chul LEE

IPC: H01L41/047 ,  H01L41/29

CPC classification number: H01L41/0475 ,  H01L41/047 ,  H01L41/29 ,  H03H3/02 ,  H03H9/02118 ,  H03H9/173 ,  H03H2003/021

Abstract: An acoustic resonator includes a resonating part including a piezoelectric layer located on a first electrode and a second electrode located on the piezoelectric layer; and a frame located on the second electrode along an edge of the resonating part, wherein the frame includes an inner surface and an outer surface, and the inner surface includes two inclined surfaces.