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41.发明申请Sputtering Apparatus, Thin-Film Forming Method, and Manufacturing Method for a Field Effect Transistor 审中-公开溅射装置，薄膜形成方法和场效应晶体管的制造方法公开(公告)号：US20110195562A1
公开(公告)日：2011-08-11
申请号：US13123727
申请日：2009-10-14
申请人： Takaomi Kurata , Junya Kiyota , Makoto Arai , Yasuhiko Akamatsu , Satoru Ishibashi , Kazuya Saito
发明人： Takaomi Kurata , Junya Kiyota , Makoto Arai , Yasuhiko Akamatsu , Satoru Ishibashi , Kazuya Saito
IPC分类号： H01L21/203 , C23C14/34
CPC分类号： C23C14/083 , C23C14/35 , H01J37/3408 , H01J37/3455
摘要： [Object] To provide a sputtering apparatus, a thin-film forming method, and a manufacturing method for a field effect transistor, which are capable of reducing damage of a base layer.[Solving Means] A sputtering apparatus according to an embodiment of the present invention is a sputtering apparatus for forming a thin-film on a surface to be processed of a substrate 10, and includes a vacuum chamber 61, a supporting portion 93, a target 80, and a magnet 83. The magnet 83 generates plasma forming a region to be sputtered 80a, and moves the region to be sputtered 80abetween a first position in which the region to be sputtered 80a is not opposed to the surface to be processed and a second position in which the region to be sputtered is opposed to the surface to be processed. With this, it is possible to weaken incident energy of sputtered particles incident on the surface to be processed of the substrate 10 from the region to be sputtered 80a, and to protect the base layer.
摘要翻译： 本发明提供能够降低基底层损伤的溅射装置，薄膜形成方法和场效晶体管的制造方法。 本发明的实施方式的溅射装置是在基板10的被处理面上形成薄膜的溅射装置，具有真空室61，支撑部93，靶 80和磁体83.磁体83产生等离子体，形成要溅射的区域80a，并且在要溅射的区域80a与待处理的表面不相对的第一位置之间移动要溅射的区域80， 第二位置，其中要溅射的区域与待处理的表面相对。 由此，可以从入射到被溅射区域80a上的入射到待处理基板10的表面上的溅射粒子的入射能量减弱，从而保护基底层。
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42.发明申请FILM FORMING METHOD FOR ANTIREFLECTION FILM, ANTIREFLECTION FILM, AND FILM FORMING DEVICE 审中-公开抗反射膜成膜方法，抗反射膜和薄膜成膜装置公开(公告)号：US20110194181A1
公开(公告)日：2011-08-11
申请号：US13123624
申请日：2009-10-14
CPC分类号： G02B1/113 , C23C14/086 , C23C14/3492
摘要： A film forming method for an antireflection film that has a first indium oxide-based thin film and a second indium oxide-based thin film that is laminated on the first indium oxide-based thin film, including a first film forming step that forms the first indium oxide-based thin film by performing sputtering using a first indium oxide-based target in a first reactive gas that contains one, two, or three types selected from a group consisting of oxygen gas, hydrogen gas, and water vapor; and a second film forming step that forms on the first indium oxide-based thin film the second indium oxide-based thin film by performing sputtering using a second indium oxide-based target in a second reactive gas that contains one, two, or three types selected from a group consisting of oxygen gas, hydrogen gas, and water vapor, and that has a different composition from the first reactive gas.
摘要翻译： 一种抗反射膜的成膜方法，其具有层叠在第一氧化铟系薄膜上的第一氧化铟系薄膜和第二氧化铟系薄膜，该第一氧化铟系薄膜和第二氧化铟系薄膜包括形成第一 氧化铟系薄膜，其通过使用第一反应气体中的第一氧化铟系靶进行溅射，所述第一反应气体含有选自氧气，氢气和水蒸气中的一种，两种或三种; 以及第二成膜步骤，通过在包含一种，两种或三种类型的第二反应性气体中使用第二氧化铟基靶进行溅射，在第一氧化铟基薄膜上形成第二氧化铟基薄膜 选自氧气，氢气和水蒸气，并且与第一反应气体具有不同的组成。
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公开(公告)号：US20110180402A1
公开(公告)日：2011-07-28
申请号：US13122584
申请日：2009-10-07
申请人： Takaomi Kurata , Junya Kiyota , Makoto Arai , Yasuhiko Akamatsu , Satoru Ishibashi , Shin Asari , Kazuya Saito , Shigemitsu Sato , Masashi Kikuchi
发明人： Takaomi Kurata , Junya Kiyota , Makoto Arai , Yasuhiko Akamatsu , Satoru Ishibashi , Shin Asari , Kazuya Saito , Shigemitsu Sato , Masashi Kikuchi
CPC分类号： H01L21/67161 , C23C14/568 , C23C16/54 , H01L21/67748 , H01L21/6776 , H01L27/1225 , H01L29/7869
摘要： To provide a vacuum processing apparatus capable of supporting and conveying a substrate by a method suitable for a processing content in each processing step and capable of suppressing various mechanisms provided within a processing chamber from being adversely affected. More particularly, the CVD chamber of the apparatus is configured to be horizontal, and hence the above-mentioned problem can be solved. Further, by configuring a sputtering apparatus as the vertical type processing apparatus, problems with abnormal electrical discharge can be solved.
摘要翻译： 提供一种能够通过适合每个处理步骤中的处理内容的方法来支撑和输送基板并且能够抑制处理室内提供的各种机构受到不利影响的真空处理设备。 更具体地，装置的CVD室被配置为水平的，因此可以解决上述问题。 此外，通过将溅射装置构成为垂直型处理装置，可以解决异常放电的问题。
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公开(公告)号：US20110068402A1
公开(公告)日：2011-03-24
申请号：US12881641
申请日：2010-09-14
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L23/53238 , C23C14/0057 , C23C14/185 , H01L21/2855 , H01L21/76841 , H01L23/53233 , H01L27/124 , H01L29/458 , H01L2924/0002 , H01L2924/00
摘要： A metallic wiring film, which is not exfoliated even when exposed to a plasma of hydrogen, is provided. A metallic wiring film 20a is constituted by an adhesion layer 51 in which an additive metal is added to copper and a low-resistance metallic layer 52, which is made of pure copper, is disposed on the adhesion layer 51. When the additive metal made of at least one of Ti, Zr and Cr, and oxygen are included in a copper alloy which is in the adhesion layer 51 and a source electrode and a drain electrode are formed from it, copper does not precipitate at an interface between the adhesion layer 51 and the silicon layer even when being exposed to the hydrogen plasma, which prevents exfoliation from occurring between the adhesion layer 51 and the silicon layer. If the amount of additive metal increases, the adhesion layer 51 cannot be etched with an etching liquid for etching the low-resistance metallic layer 52, so that the maximum additional amount to permit the etching to be performed is the upper limit.
摘要翻译： 提供即使暴露于氢等离子体时也不会剥离的金属布线膜。 金属布线膜20a由在铜中添加添加金属的粘合层51和由纯铜制成的低电阻金属层52设置在粘合层51上。当添加金属制成 的Ti，Zr和Cr中的至少一种，并且氧被包括在粘合层51中的铜合金中，并且源电极和漏电极由它形成，铜不会在粘合层 51和硅层，即使当暴露于氢等离子体时，其防止粘附层51和硅层之间发生剥离。 如果添加金属的量增加，则不能用用于蚀刻低电阻金属层52的蚀刻液来蚀刻粘合层51，使得允许进行蚀刻的最大附加量为上限。
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公开(公告)号：US20100206719A1
公开(公告)日：2010-08-19
申请号：US12678399
申请日：2008-09-17
IPC分类号： C23C14/35
CPC分类号： H01L31/1884 , C23C14/08 , C23C14/086 , C23C14/35 , H01L31/022483 , H01L31/076 , Y02E10/548
摘要： A method for manufacturing a solar cell provided with an upper electrode which functions as an electrode for extracting electric power at a light incidence side of the solar cell and includes a ZnO-based transparent conductive film, the method comprising: forming the upper electrode by sputtering a target on which a formation material of the transparent conductive film is provided while applying sputtering voltage of 340V or less and generating a horizontal magnetic field on a target surface.
摘要翻译： 一种制造太阳能电池的方法，该太阳能电池具有作为在太阳能电池的光入射侧提取电力的电极的上部电极，并且包括ZnO系透明导电膜，该方法包括：通过溅射形成上部电极 在施加340V以下的溅射电压并且在目标表面上产生水平磁场的同时设置有透明导电膜的形成材料的靶。
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公开(公告)号：US20100187100A1
公开(公告)日：2010-07-29
申请号：US12668962
申请日：2008-08-20
IPC分类号： C23C14/35
CPC分类号： C23C14/086 , C23C14/35 , H01L31/1884 , Y02E10/50
摘要： A method for forming a transparent conductive film forms the transparent conductive film containing ZnO as a basic element on a substrate by a sputtering which is performed by applying a sputtering voltage to a target made of a material to form the transparent conductive film and generating a horizontal magnetic field over a surface of the target. The sputtering is performed by setting the sputtering voltage to 340 V or less.
摘要翻译： 形成透明导电膜的方法通过溅射形成在衬底上含有ZnO作为基本元素的透明导电膜，其通过将溅射电压施加到由材料制成的靶材上以形成透明导电膜并产生水平 在目标表面上的磁场。 通过将溅射电压设定为340V以下来进行溅射。
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公开(公告)号：US20080210138A1
公开(公告)日：2008-09-04
申请号：US11813455
申请日：2005-11-07
申请人： Satoru Ishibashi
发明人： Satoru Ishibashi
IPC分类号： B65D19/00
CPC分类号： B65D19/40 , B65D19/0012 , B65D19/0028 , B65D19/0075 , B65D2519/00019 , B65D2519/00054 , B65D2519/00124 , B65D2519/00288 , B65D2519/00293 , B65D2519/00318 , B65D2519/00323 , B65D2519/00338 , B65D2519/00343 , B65D2519/00373 , B65D2519/00407 , B65D2519/00437 , B65D2519/00557 , B65D2519/00562 , B65D2519/0094
摘要： A paperboard three-dimensionally molded pallet having sufficient rigidity in its load carrying surface and load bearing strength in its leg portions. The pallet is so designed that when it is finally treated as a waste, it can be recycled as new paperboard three-dimensionally molded pallets or a material for the other paper products requiring rigidity. The pallet comprises a paper-made plate-like top plate member (1) and paper-made cylinder-with-base legs (2). A plurality of through holes (15) is provided in the top plate member (1), and the cylinder-with-base-type leg (2) is inserted into the through hole (15) and then joined to the top plate member (1) with a water soluble adhesive agent. The top plate member (1) and the cylinder-with-base-type leg (2) are produced by placing a water-absorbed plane laminated paper as a raw material in a mold to shape it into a specific shape by thermal dehydration under pressure process.
摘要翻译： 一种纸板三维模制托盘，其承载表面具有足够的刚性，并在其腿部具有承载强度。 托盘的设计使得当它最终被作为废物处理时，可以作为新的纸板三维模制的托盘或用于需要刚性的其它纸制品的材料被再循环。 托盘包括纸制的板状顶板构件（1）和带有纸的圆筒底座腿（2）。 在顶板部件（1）中设置有多个通孔（15），并且将圆筒状的底座型脚（2）插入通孔（15）中，然后与顶板部件 1）用水溶性粘合剂。 通过将作为原料的吸水面层压纸放置在模具中，通过在压力下进行热脱水将其成形为特定形状来制造顶板构件（1）和圆筒状底座型脚（2） 处理。
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公开(公告)号：US07033461B2
公开(公告)日：2006-04-25
申请号：US10284287
申请日：2002-10-31
申请人： Noriaki Tani , Toshihiro Suzuki , Satoshi Ikeda , Hiroaki Kawamura , Satoru Ishibashi , Kouichi Hanzawa , Takafumi Matsumoto
发明人： Noriaki Tani , Toshihiro Suzuki , Satoshi Ikeda , Hiroaki Kawamura , Satoru Ishibashi , Kouichi Hanzawa , Takafumi Matsumoto
CPC分类号： C23C14/044 , C23C14/545
摘要： The present invention provides an efficient thin film forming apparatus which is capable of correcting a film thickness so as to take care of a variation in distribution in the film thickness and to take care of the circumferential distribution of the film thickness, as well as a method for forming a thin film using this film forming apparatus. The method comprises the first step of first forming a thin film to a predetermined percentage out of thickness through an opening 8a in a shutter 8, the second step of then using a film thickness monitor 10 to measure the distribution of the thickness of the thin film formed in the first step, and the third step of reducing a film formation rate by an opening 8b in the shutter 8 between a substrate 4 and a sputtering cathode 6 as compared to that of the first step and correcting the thickness of the thin film by an opening 13a in the first film thickness correcting plate 13 between the substrate 4 and the sputtering cathode 6 corresponding to the distribution of the film thickness measured by the film thickness monitor 10 in the second step. Then, the second step is carried out again, during which the film thickness monitor 10 is used to measure the distribution of the thickness of the thin film formed in the third step. Further, the third and second steps are repeatedly carried out.
摘要翻译： 本发明提供了一种有效的薄膜形成装置，该薄膜形成装置能够校正膜厚度，以便保证薄膜厚度分布的变化，并且能够保证薄膜厚度的周向分布，以及方法 用于使用该成膜装置形成薄膜。 该方法包括首先通过快门8中的开口8a将薄膜首先形成预定百分比的厚度的第一步骤，然后使用薄膜厚度监测器10来测量薄膜厚度的分布的第二步骤 在第一步骤中形成的薄膜，以及第三步骤，通过与第一步骤相比在基板4和溅射阴极6之间的快门8中的开口8b降低成膜速率，并且校正薄膜的厚度 在第二步骤中，由基板4和溅射阴极6之间的第一膜厚校正板13的开口部分13a对应于由膜厚度监视器10测量的膜厚度的分布。 然后，再次进行第二步骤，在此期间，膜厚度监测器10用于测量在第三步骤中形成的薄膜的厚度分布。 此外，重复执行第三和第二步骤。
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49.发明授权公开(公告)号：US08470651B2
公开(公告)日：2013-06-25
申请号：US13064858
申请日：2011-04-21
IPC分类号： H01L21/84
CPC分类号： H01L29/66765 , C23C14/0036 , C23C14/185 , C23C14/5826 , H01L21/2855 , H01L23/53233 , H01L27/124 , H01L29/458 , H01L2924/0002 , H01L2924/00
摘要： Provided is a metallic wiring film which is not peeled away even when exposed to a hydrogen plasma. A metallic wiring film is constituted by an adhesion layer containing copper, Ca, and oxygen and a low-resistance metal layer (a layer of a copper alloy or pure copper) having a lower resistance than the adhesion layer. When the adhesion layer is composed of a copper alloy, which contains Ca and oxygen, and a source electrode film and a drain electrode film adhering to an ohmic contact layer are constituted by the adhesion layer, even if the adhesion layer is exposed to the hydrogen plasma, a Cu-containing oxide formed at an interface between the adhesion layer and the ohmic contact layer is not reduced, so that no peeling occurs between the adhesion layer and a silicon layer.
摘要翻译： 提供即使暴露于氢等离子体也不会剥离的金属配线膜。 金属布线膜由包含铜，Ca和氧的粘合层和具有比粘合层低的电阻的低电阻金属层（铜合金或纯铜的一层）构成。 当粘合层由含有Ca和氧的铜合金构成，并且附着在欧姆接触层上的源电极膜和漏电极膜由粘合层构成时，即使粘附层暴露于氢 等离子体，在粘合层和欧姆接触层之间的界面处形成的含Cu氧化物不会降低，使得粘附层和硅层之间不会发生剥离。
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公开(公告)号：US08460965B2
公开(公告)日：2013-06-11
申请号：US13124529
申请日：2009-10-15
IPC分类号： H01L21/00
CPC分类号： H01L31/02366 , H01L31/022466 , H01L31/1884 , Y02E10/50
摘要： A manufacturing method for a solar cell including an upper electrode extracting an electrode at an incident light side, the upper electrode including a transparent conductive film, a basic structural element of the transparent conductive film being any one of an indium (In), a zinc (Zn), and tin (Sn), the manufacturing method including: a step A forming a texture on a front surface of a transparent substrate using a wet etching method, the transparent conductive film being formed on the transparent substrate, wherein in the step A, when the texture is formed, a metal thin film is formed on the transparent substrate, and an anisotropic etching is performed with the metal thin film being a mask.
摘要翻译： 一种太阳能电池的制造方法，其特征在于，包括在入射光侧提取电极的上部电极，所述上部电极包括透明导电膜，所述透明导电膜的基本结构元素为铟（In），锌 （Zn）和锡（Sn），所述制造方法包括：步骤A，其使用湿式蚀刻方法在透明基板的正面上形成纹理，所述透明导电膜形成在所述透明基板上，其中，在所述工序 如图A所示，当形成纹理时，在透明基板上形成金属薄膜，以金属薄膜为掩模进行各向异性蚀刻。
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