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    METHOD FOR FORMING A FINE PATTERN
    41.
    发明申请
    METHOD FOR FORMING A FINE PATTERN 审中-公开

    公开(公告)号：US20190267246A1

    公开(公告)日：2019-08-29

    申请号：US16263759

    申请日：2019-01-31

    申请人： Samsung Electronics Co., Ltd.

    发明人： KeunHee BAI ,  Jongchul Park ,  Seungjun Kim ,  Seungju Park ,  Young-Ju Park ,  Hak-Sun Lee

    IPC分类号： H01L21/3065 ,  H01L21/3213 ,  H01L21/308

    摘要： A method for forming a fine pattern includes forming line patterns and a connection pattern on a semiconductor substrate, the line patterns extending in a first direction and spaced apart from each other in a second direction intersecting the first direction, and the connection pattern connecting portions of the line patterns adjacent to each other in the second direction, and performing an ion beam etching process on the connection pattern. The ion beam etching process provides an ion beam in an incident direction parallel to a plane defined by the first direction and a third direction perpendicular to a top surface of the semiconductor substrate, and the incident direction of the ion beam is not perpendicular to the top surface of the semiconductor substrate.

    Methods for manufacturing semiconductor devices having three-dimensionally arranged memory cells
    42.
    发明授权
    Methods for manufacturing semiconductor devices having three-dimensionally arranged memory cells 有权

    公开(公告)号：US10347502B2

    公开(公告)日：2019-07-09

    申请号：US15908845

    申请日：2018-03-01

    申请人： Samsung Electronics Co., Ltd.

    发明人： Jongchul Park

    IPC分类号： H01L21/4763 ,  H01L21/311 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11568 ,  H01L27/11582 ,  H01L23/528 ,  H01L21/768 ,  H01L23/522 ,  H01J37/32

    摘要： Methods for manufacturing semiconductor devices may include forming a stack structure including layers stacked on a substrate, forming a mask pattern on the stack structure, and patterning the stack structure using the mask pattern such that the stack structure has an end portion with a stepped profile. The patterning of the stack structure may include performing a pad etching process of etching the stack structure using the mask pattern as an etch mask, and performing a mask etching process of etching a sidewall of the mask pattern. The performing of the mask etching process may include irradiating an ion beam onto the mask pattern, which may be irradiated at a first tilt angle with respect to the sidewall of the mask pattern and at a second tilt angle with respect to a top surface of the mask pattern. The first tilt angle may be different from the second tilt angle.