Processes for synthesizing nanocrystals

    公开(公告)号:US10160649B2

    公开(公告)日:2018-12-25

    申请号:US14909235

    申请日:2014-07-30

    Abstract: A process of synthesizing Ga—Se nanocrystals is provided, the process including: contacting a first precursor containing gallium with a second precursor containing selenium to obtain a Ga—Se single precursor; and reacting the Ga—Se single precursor in a solvent in the presence of a ligand compound, and optionally with a third precursor including an element (A) other than gallium and selenium, to prepare a Ga—Se nanocrystal represented by Chemical Formula 1: GaSexAy   [Chemical Formula 1] wherein x is about 1.1 to 3, and y is about 0.1 to 4.

    Display panel and electronic device including the same

    公开(公告)号:US12256621B2

    公开(公告)日:2025-03-18

    申请号:US17687451

    申请日:2022-03-04

    Abstract: A display panel including a light emitting panel; and a color conversion panel with a surface opposite a surface of the light emitting panel. The light emitting panel is configured to emit incident light including a first light and a second light. The color conversion panel includes a color conversion layer including two or more color conversion regions, a color conversion region includes a first region corresponding to the green pixel, the first region includes a matrix and a first composite dispersed within the matrix and including a plurality of luminescent nanostructures, and the spectral overlap between a UV-Vis absorption spectrum of the luminescent nanostructures, the maximum emission peak of the first light, and the maximum emission peak of the second light satisfies the following equation: B/A≤about 0.6 A and B are as defined.

Patent Agency Ranking