公开(公告)号：US20220293641A1

公开(公告)日：2022-09-15

申请号：US17830546

申请日：2022-06-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Daisuke KUROSAKI ,  Masataka NAKADA ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  H01L29/786

Abstract: A semiconductor device including an oxide semiconductor in which on-state current is high is provided. The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. Furthermore, the first transistor and the second transistor are transistors having a top-gate structure. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. The first transistor provided in the driver circuit portion includes two gate electrodes between which the oxide semiconductor film is provided.

公开(公告)号：US20200313002A1

公开(公告)日：2020-10-01

申请号：US16902479

申请日：2020-06-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Masami JINTYOU ,  Daisuke KUROSAKI

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66

Abstract: A change in electrical characteristics is inhibited and reliability is improved in a semiconductor device using a transistor including an oxide semiconductor. One embodiment of a semiconductor device including a transistor includes a gate electrode, first and second insulating films over the gate electrode, an oxide semiconductor film over the second insulating film, and source and drain electrodes electrically connected to the oxide semiconductor film. A third insulating film is provided over the transistor and a fourth insulating film is provided over the third insulating film. The third insulating film includes oxygen. The fourth insulating film includes nitrogen. The amount of oxygen released from the third insulating film is 1×1019/cm3 or more by thermal desorption spectroscopy, which is estimated as oxygen molecules. The amount of oxygen molecules released from the fourth insulating film is less than 1×1019/cm3.

公开(公告)号：US20180308558A1

公开(公告)日：2018-10-25

申请号：US16017181

申请日：2018-06-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masayuki SAKAKURA ,  Yuugo GOTO ,  Hiroyuki MIYAKE ,  Daisuke KUROSAKI

IPC: G11C19/18 ,  H01L27/12 ,  H01L27/02

CPC classification number: G11C19/184 ,  G09G2310/0275 ,  G09G2310/0286 ,  H01L27/0248 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124

Abstract: A semiconductor device in which a decrease in the yield by electrostatic destruction can be prevented is provided. A scan line driver circuit for supplying a signal for selecting a plurality of pixels to a scan line includes a shift register for generating the signal. One conductive film functioning as respective gate electrodes of a plurality of transistors in the shift register is divided into a plurality of conductive films. The divided conductive films are electrically connected to each other by a conductive film which is formed in a layer different from the divided conductive films are formed. The plurality of transistors includes a transistor on an output side of the shift register.

公开(公告)号：US20180102086A1

公开(公告)日：2018-04-12

申请号：US15725468

申请日：2017-10-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro KATAYAMA ,  Daisuke KUROSAKI ,  Kenichi OKAZAKI ,  Junichi KOEZUKA

IPC: G09G3/30 ,  H01L27/32 ,  H01L29/786 ,  H01L29/417

CPC classification number: G09G3/30 ,  G09G3/3659 ,  G09G3/3677 ,  G09G3/3688 ,  G09G2330/021 ,  H01L27/1225 ,  H01L27/1288 ,  H01L27/3244 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696 ,  H01L2227/323

Abstract: The number of lithography processes is reduced and a high-definition display device is provided. The display device includes a pixel portion and a driver circuit for driving the pixel portion. The pixel portion includes a first transistor and a pixel electrode electrically connected to the first transistor. The driver circuit includes a second transistor and a connection portion. The second transistor includes a metal oxide film, first and second gate electrodes that face each other with the metal oxide film positioned therebetween, source and drain electrodes over and in contact with the metal oxide film, and a first wiring connecting the first and second gate electrodes. The connection portion includes a second wiring on the same surface as the first gate electrode, a third wiring on the same surface as the source electrode and the drain electrode, and a fourth wiring connecting the second wiring and the third wiring. The pixel electrode, the first wiring, and the fourth wiring are formed using the same layer.

公开(公告)号：US20170256648A1

公开(公告)日：2017-09-07

申请号：US15597297

申请日：2017-05-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Masami JINTYOU ,  Daisuke KUROSAKI

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/26

CPC classification number: H01L29/78606 ,  H01L29/26 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869

Abstract: A semiconductor device including a transistor is provided. The transistor includes a gate electrode, a first insulating film over the gate electrode, a second insulating film over the first insulating film, an oxide semiconductor film over the second insulating film, a source electrode and a drain electrode electrically connected to the oxide semiconductor film, a third insulating film over the source electrode, and a fourth insulating film over the drain electrode. A fifth insulating film including oxygen is provided over the transistor. The third insulating film includes a first portion, the fourth insulating film includes a second portion, and the fifth insulating film includes a third portion. The amount of oxygen molecules released from each of the first portion and the second portion is smaller than the amount of oxygen molecules released from the third portion when the amounts are measured by thermal desorption spectroscopy.

公开(公告)号：US20170170326A1

公开(公告)日：2017-06-15

申请号：US15374356

申请日：2016-12-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi TSUBUKU ,  Kazuya SUGIMOTO ,  Tsutomu MURAKAWA ,  Motoki NAKASHIMA ,  Shinpei MATSUDA ,  Noritaka ISHIHARA ,  Daisuke KUROSAKI ,  Toshimitsu OBONAI ,  Hiroshi KANEMURA ,  Junichi KOEZUKA

IPC: H01L29/786 ,  H01L27/105 ,  H03K17/687 ,  H01L29/24 ,  H01L29/423

CPC classification number: H01L29/7869 ,  G09G3/2092 ,  H01L27/1052 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/42364 ,  H01L29/42384 ,  H01L29/78696 ,  H03K17/687

Abstract: A transistor in which a change in characteristics is small is provided. A circuit, a semiconductor device, a display device, or an electronic device in which a change in characteristics of the transistor is small is provided. The transistor includes an oxide semiconductor; a channel region is formed in the oxide semiconductor; the channel region contains indium, an element M, and zinc; the element M is one or more selected from aluminum, gallium, yttrium, tin, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium; a gate insulator contains silicon and oxygen whose atomic number is 1.5 times or more as large as the atomic number of silicon; the carrier density of the channel region is higher than or equal to 1×109 cm−3 and lower than or equal to 5×1016 cm−3; and the energy gap of the channel region is higher than or equal to 2.7 eV and lower than or equal to 3.1 eV.

公开(公告)号：US20170054029A1

公开(公告)日：2017-02-23

申请号：US15231061

申请日：2016-08-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Daisuke KUROSAKI ,  Yukinori SHIMA ,  Toshimitsu OBONAI

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02653 ,  H01L29/66969

Abstract: A method for manufacturing a semiconductor device has a first step including a step of forming an oxide semiconductor film, a second step including a step of forming a gate insulating film over the oxide semiconductor film and a step of forming a gate electrode over the gate insulating film, a third step including a step of forming a nitride insulating film over the oxide semiconductor film and the gate electrode, a fourth step including a step of forming an oxide insulating film over the nitride insulating film, a fifth step including a step of forming an opening in the nitride insulating film and the oxide insulating film, and a sixth step including a step of forming source and drain electrodes over the oxide insulating film so as to cover the opening. In the third step, the nitride insulating film is formed through at least two steps: plasma treatment and deposition treatment. The two steps are each performed at a temperature higher than or equal to 150° C. and lower than 300° C.

Abstract translation: 一种半导体器件的制造方法具有：第一工序，包括形成氧化物半导体膜的工序;第二工序，包括在所述氧化物半导体膜上形成栅极绝缘膜的步骤;以及在所述栅极绝缘上形成栅电极的工序; 薄膜，第三步骤，包括在所述氧化物半导体膜和所述栅电极上形成氮化物绝缘膜的步骤，第四步骤，包括在所述氮化物绝缘膜上形成氧化物绝缘膜的步骤，第五步骤，包括形成步骤 氮化物绝缘膜和氧化物绝缘膜中的开口，以及第六步骤，包括在氧化物绝缘膜上形成源极和漏极以便覆盖开口的步骤。 在第三步骤中，通过至少两个步骤形成氮化物绝缘膜：等离子体处理和沉积处理。 两个步骤各自在高于或等于150℃并低于300℃的温度下进行。

公开(公告)号：US20170033238A1

公开(公告)日：2017-02-02

申请号：US15226051

申请日：2016-08-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Daisuke KUROSAKI ,  Masataka NAKADA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/78693 ,  H01L27/1225 ,  H01L27/1251 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. Furthermore, the first transistor provided in the driver circuit portion may include the oxide semiconductor film in which a first film and a second film are stacked, and the second transistor provided in the pixel portion may include the oxide semiconductor film which differs from the first film in the atomic ratio of metal elements.

Abstract translation: 该半导体器件包括设置在驱动电路部分中的第一晶体管和设置在像素部分中的第二晶体管; 第一晶体管和第二晶体管具有不同的结构。 在每个晶体管的氧化物半导体膜中，杂质元素包含在不与栅电极重叠的区域中。 含有杂质元素的氧化物半导体膜的区域用作低电阻区域。 此外，含有杂质元素的氧化物半导体膜的区域与含有氢的膜接触。 此外，设置在驱动器电路部分中的第一晶体管可以包括堆叠第一膜和第二膜的氧化物半导体膜，并且设置在像素部分中的第二晶体管可以包括与第一膜不同的氧化物半导体膜 以金属元素的原子比计。

公开(公告)号：US20160225795A1

公开(公告)日：2016-08-04

申请号：US15010392

申请日：2016-01-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Daisuke KUROSAKI ,  Masami JINTYOU ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  H01L29/24 ,  H01L29/04 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/1248 ,  H01L27/127 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A method for manufacturing a highly reliable semiconductor device is provided. The method includes the steps of: forming an oxide semiconductor film at a first temperature; processing the oxide semiconductor film into an island shape; not performing a process at a temperature higher than the first temperature, but depositing a material to be source and drain electrodes by a sputtering method; processing the material to form the source and drain electrodes; forming a protective insulating film, and then forming a first barrier film; adding excess oxygen or oxygen radicals to the protective insulating film through the first barrier film; performing heat treatment at a second temperature lower than 400° C. to diffuse the excess oxygen or oxygen radicals into the oxide semiconductor film; and removing part of the first barrier film and part of the protective insulating film by wet etching, and then forming a second barrier film.

Abstract translation: 提供一种用于制造高度可靠的半导体器件的方法。 该方法包括以下步骤：在第一温度下形成氧化物半导体膜; 将氧化物半导体膜加工成岛状; 在高于第一温度的温度下不进行处理，而是通过溅射法沉积作为源极和漏极的材料; 处理材料以形成源极和漏极; 形成保护绝缘膜，然后形成第一阻挡膜; 通过第一阻挡膜向保护绝缘膜中加入过量的氧或氧自由基; 在低于400℃的第二温度下进行热处理以将过量的氧或氧自由基扩散到氧化物半导体膜中; 并通过湿法蚀刻除去第一阻挡膜和保护绝缘膜的一部分的一部分，然后形成第二阻挡膜。

公开(公告)号：US20160155759A1

公开(公告)日：2016-06-02

申请号：US14946985

申请日：2015-11-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Hiroshi KANEMURA ,  Daisuke KUROSAKI ,  Yukinori SHIMA ,  Junichi KOEZUKA ,  Hiroyuki MIYAKE

IPC: H01L27/12 ,  H01L29/417 ,  H01L29/786

CPC classification number: H01L29/41733 ,  H01L27/1225 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: To provide a semiconductor device including a transistor which includes an oxide semiconductor film and has excellent electrical characteristics. A semiconductor device includes a transistor including a first electrode, a first insulating film over the first electrode, an oxide semiconductor film over the first insulating film, a second insulating film over the oxide semiconductor film, and a second electrode over the second insulating film. The oxide semiconductor film includes a first oxide semiconductor film and a second oxide semiconductor film. The difference between energy at a conduction band minimum of the first oxide semiconductor film and energy at a conduction band minimum of the second oxide semiconductor film is greater than or equal to 0.2 eV. A rate of change in drain current per unit channel width relative to a drain voltage of 1 V can be less than or equal to 2%.

Abstract translation: 提供包括具有氧化物半导体膜并且具有优异的电特性的晶体管的半导体器件。 半导体器件包括晶体管，其包括第一电极，第一电极上的第一绝缘膜，第一绝缘膜上的氧化物半导体膜，氧化物半导体膜上的第二绝缘膜，以及位于第二绝缘膜上的第二电极。 氧化物半导体膜包括第一氧化物半导体膜和第二氧化物半导体膜。 第一氧化物半导体膜的导带最小值处的能量与第二氧化物半导体膜的导带最小值处的能量之差大于或等于0.2eV。 每单位沟道宽度相对于1V的漏极电压的漏极电流的变化率可以小于或等于2％。