公开(公告)号：US20220005790A1

公开(公告)日：2022-01-06

申请号：US17270722

申请日：2019-08-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kazunori WATANABE ,  Koji KUSUNOKI ,  Taiki NONAKA ,  Hiroki ADACHI ,  Koichi TAKESHIMA

IPC: H01L25/075 ,  H01L27/12 ,  H01L29/786 ,  H01L33/62

Abstract: A display device with high display quality is provided. A display device with low power consumption is provided. In the display device, a first transistor, a second transistor, a first conductive layer, and a light-emitting diode package are included in a pixel. The light-emitting diode package includes a first light-emitting diode, a second light-emitting diode, a second conductive layer, a third conductive layer, and a fourth conductive layer. The first light-emitting diode includes a first electrode and a second electrode. The second light-emitting diode includes a third electrode and a fourth electrode. One of a source and a drain of the first transistor is electrically connected to the first electrode through the second conductive layer. One of a source and a drain of the second transistor is electrically connected to the third electrode through the third conductive layer. The first conductive layer is electrically connected to each of the second electrode and the fourth electrode through the fourth conductive layer. A constant potential is supplied to the first conductive layer.

公开(公告)号：US20210020668A1

公开(公告)日：2021-01-21

申请号：US16983394

申请日：2020-08-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masataka SATO ,  Masakatsu OHNO ,  Seiji YASUMOTO ,  Hiroki ADACHI

IPC: H01L27/12 ,  B23K26/351 ,  H01L51/00 ,  H01L51/56

Abstract: A peeling method at low cost with high mass productivity is provided. A silicon layer having a function of releasing hydrogen by irradiation with light is formed over a formation substrate, a first layer is formed using a photosensitive material over the silicon layer, an opening is formed in a portion of the first layer that overlaps with the silicon layer by a photolithography method and the first layer is heated to form a resin layer having an opening, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, a conductive layer is formed to overlap with the opening of the resin layer and the silicon layer, the silicon layer is irradiated with light using a laser, and the transistor and the formation substrate are separated from each other.

公开(公告)号：US20200295057A1

公开(公告)日：2020-09-17

申请号：US16884241

申请日：2020-05-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yasuharu HOSAKA ,  Satoru IDOJIRI ,  Kenichi OKAZAKI ,  Hiroki ADACHI ,  Daisuke KUBOTA

IPC: H01L27/12 ,  H01L21/683 ,  H01L29/66 ,  H01L29/786

Abstract: A peeling method at low cost with high mass productivity is provided. A resin layer having a thickness greater than or equal to 0.1 μm and less than or equal to 3 μm is formed over a formation substrate using a photosensitive and thermosetting material, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, the resin layer is irradiated with light using a linear laser device, and the transistor and the formation substrate are separated from each other. A first region and a second region which is thinner than the first region or an opening can be formed in the resin layer. In the case of forming a conductive layer functioning as an external connection terminal or the like to overlap with the second region or the opening of the resin layer, the conductive layer is exposed.

公开(公告)号：US20200067027A1

公开(公告)日：2020-02-27

申请号：US16493104

申请日：2018-03-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Seiji YASUMOTO ,  Kayo KUMAKURA ,  Yuka SATO ,  Satoru IDOJIRI ,  Hiroki ADACHI ,  Kenichi OKAZAKI

IPC: H01L51/56 ,  H01L51/00 ,  H01L51/52

Abstract: A high-yield fabricating method of a semiconductor device including a peeling step is provided.A peeling method includes a step of stacking and forming a first material layer and a second material layer over a substrate and a step of separating the first material layer and the second material layer from each other. The second material layer is formed over the substrate with the first material layer therebetween. The first material layer includes a first compound layer in contact with the second material layer and a second compound layer positioned closer to the substrate side than the first compound layer is. The first compound layer has the highest oxygen content among the layers included in the first material layer. The second compound layer has the highest nitrogen content among the layers included in the first material layer. The second material layer includes a resin. In the step of separating, the first material layer and the second material layer are separated from each other by irradiation of an interface between the first material layer and the second material layer or the vicinity of the interface with light.

公开(公告)号：US20190333942A1

公开(公告)日：2019-10-31

申请号：US16087811

申请日：2017-04-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masataka SATO ,  Masakatsu OHNO ,  Seiji YASUMOTO ,  Hiroki ADACHI

IPC: H01L27/12 ,  H01L51/00 ,  H01L51/56 ,  B23K26/351

Abstract: A peeling method at low cost with high mass productivity is provided. A silicon layer having a function of releasing hydrogen by irradiation with light is formed over a formation substrate, a first layer is formed using a photosensitive material over the silicon layer, an opening is formed in a portion of the first layer that overlaps with the silicon layer by a photolithography method and the first layer is heated to form a resin layer having an opening, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, a conductive layer is formed to overlap with the opening of the resin layer and the silicon layer, the silicon layer is irradiated with light using a laser, and the transistor and the formation substrate are separated from each other.

公开(公告)号：US20170294463A1

公开(公告)日：2017-10-12

申请号：US15477528

申请日：2017-04-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masataka SATO ,  Masakatsu OHNO ,  Seiji YASUMOTO ,  Hiroki ADACHI

IPC: H01L27/12 ,  H01L21/683 ,  H01L29/786

CPC classification number: H01L21/7806 ,  H01L21/02172 ,  H01L21/02345 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/47 ,  H01L21/6835 ,  H01L21/84 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1266 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/78603 ,  H01L29/78648 ,  H01L29/7869 ,  H01L51/0097 ,  H01L2221/6835 ,  H01L2221/68386 ,  H01L2227/326

Abstract: A peeling method at low cost with high mass productivity is provided. An oxide layer is formed over a formation substrate, a first layer is formed over the oxide layer using a photosensitive material, an opening is formed in a portion of the first layer that overlaps with the oxide layer by a photolithography method and the first layer is heated to form a resin layer having an opening, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, a conductive layer is formed to overlap with the opening of the resin layer and the oxide layer, the oxide layer is irradiated with light using a laser, and the transistor and the formation substrate are separated from each other.

公开(公告)号：US20170294462A1

公开(公告)日：2017-10-12

申请号：US15473962

申请日：2017-03-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yasuharu HOSAKA ,  Satoru IDOJIRI ,  Kenichi OKAZAKI ,  Hiroki ADACHI ,  Daisuke KUBOTA

IPC: H01L27/12 ,  H01L21/683 ,  H01L29/786 ,  H01L29/66

Abstract: A peeling method at low cost with high mass productivity is provided. A resin layer having a thickness greater than or equal to 0.1 μm and less than or equal to 3 μm is formed over a formation substrate using a photosensitive and thermosetting material, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, the resin layer is irradiated with light using a linear laser device, and the transistor and the formation substrate are separated from each other. A first region and a second region which is thinner than the first region or an opening can be formed in the resin layer. In the case of forming a conductive layer functioning as an external connection terminal or the like to overlap with the second region or the opening of the resin layer, the conductive layer is exposed.

公开(公告)号：US20170186829A1

公开(公告)日：2017-06-29

申请号：US15388208

申请日：2016-12-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hiroki ADACHI ,  Satoru IDOJIRI ,  Kensuke YOSHIZUMI

IPC: H01L27/32 ,  H01L51/52 ,  H01L51/00 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/3262 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/3258 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L51/0024 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/5253 ,  H01L2227/323 ,  H01L2227/326 ,  H01L2251/5338 ,  H01L2251/556 ,  Y02E10/549 ,  Y02P70/521

Abstract: A flexible device is manufactured at low temperatures. A second substrate is bonded to a first substrate by a first adhesive layer. A first insulating layer, a transistor, and a second insulating layer are formed over the second substrate. Then, the first substrate and the second substrate are separated from each other while being heated at a first temperature. The heat resistant temperatures of the first substrate, the second substrate, and the first adhesive layer are a second temperature, a third temperature, and a fourth temperature, respectively. Each of the first insulating layer, the second insulating layer, and the transistor is formed at a temperature higher than or equal to room temperature and lower than the fourth temperature. The third temperature is higher than the fourth temperature and lower than the second temperature. The first temperature is higher than the fourth temperature and lower than the third temperature.

公开(公告)号：US20150367622A1

公开(公告)日：2015-12-24

申请号：US14740957

申请日：2015-06-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroki ADACHI ,  Saki EGUCHI ,  Masakatsu OHNO ,  Junpei YANAKA ,  Yoshiharu HIRAKATA

IPC: B32B43/00 ,  H01L21/67

CPC classification number: B32B43/006 ,  B32B37/003 ,  B32B37/025 ,  B32B37/12 ,  B32B37/187 ,  B32B37/22 ,  B32B38/10 ,  B32B38/18 ,  B32B39/00 ,  B32B2457/00 ,  B32B2457/20 ,  B32B2457/208 ,  H01L21/67132 ,  H01L21/6835 ,  H01L2221/68318 ,  H01L2221/6835 ,  H01L2221/68363 ,  H01L2221/68386 ,  Y10T156/195

Abstract: A peeling apparatus including a support body supply unit, a support body hold unit, a transfer mechanism, and a first structure body. The first structure body has a convex surface. The support body supply unit has a function of unwinding a first support body and includes one of a pair of tension applying mechanisms. The support body hold unit includes the other of the pair of tension applying mechanisms. The pair of tension applying mechanisms applies tension to the first support body. The transfer mechanism has a function of transferring a process member. The first structure body has a function of bending back the first support body along the convex surface. The first structure body has a function of dividing the process member into a first member and a second member. An angle at which the first structure body bends back the first support body is an obtuse angle.

Abstract translation: 一种剥离装置，包括支撑体供给单元，支撑体保持单元，转印机构和第一结构体。 第一结构体具有凸面。 支撑体供给单元具有展开第一支撑体的功能，并且包括一对张力施加机构中的一个。 支撑体保持单元包括一对张力施加机构中的另一个。 一对张力施加机构对第一支撑体施加张力。 传送机构具有传送处理部件的功能。 第一结构体具有沿凸起表面弯曲第一支撑体的功能。 第一结构体具有将处理构件分割成第一构件和第二构件的功能。 第一结构体弯曲回第一支撑体的角度是钝角。

公开(公告)号：US20150059987A1

公开(公告)日：2015-03-05

申请号：US14468662

申请日：2014-08-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kayo KUMAKURA ,  Tomoya AOYAMA ,  Akihiro CHIDA ,  Kohei YOKOYAMA ,  Masakatsu OHNO ,  Satoru IDOJIRI ,  Hisao IKEDA ,  Hiroki ADACHI ,  Yoshiharu HIRAKATA ,  Shingo EGUCHI ,  Yasuhiro JINBO

IPC: B32B43/00

CPC classification number: B32B43/006 ,  B26D1/04 ,  B26D2001/006 ,  B32B38/10 ,  B32B2457/00 ,  G02B6/00 ,  H01L21/67092 ,  H01L27/1248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L51/56 ,  H01L2221/68327 ,  H01L2227/323 ,  H01L2251/5338 ,  Y10T156/1126 ,  Y10T156/1132 ,  Y10T156/1168 ,  Y10T156/1184 ,  Y10T156/1933 ,  Y10T156/1944 ,  Y10T156/1961 ,  Y10T156/1967

Abstract: A processing apparatus of a stack is provided. The stack includes two substrates attached to each other with a gap provided between their end portions. The processing apparatus includes a fixing mechanism that fixes part of the stack, a plurality of adsorption jigs that fix an outer peripheral edge of one of the substrates of the stack, and a wedge-shaped jig that is inserted into a corner of the stack. The plurality of adsorption jigs include a mechanism that allows the adsorption jigs to move separately in a vertical direction and a horizontal direction. The processing apparatus further includes a sensor sensing a position of the gap between the end portion in the stack. A tip of the wedge-shaped jig moves along a chamfer formed on an end surface of the stack. The wedge-shaped jig is inserted into the gap between the end portions in the stack.

Abstract translation: 提供堆叠的处理装置。 堆叠包括彼此附接的两个基板，其间隙设置在它们的端部之间。 处理装置包括：固定机构，其固定堆叠的一部分;多个吸附夹具，其固定堆叠的一个基板的外周边缘;以及楔形夹具，其插入到堆叠的角部。 多个吸附夹具包括允许吸附夹具在垂直方向和水平方向上分开移动的机构。 处理装置还包括传感器，其感测堆叠中的端部之间的间隙的位置。 楔形夹具的尖端沿着形成在堆叠的端表面上的倒角移动。 楔形夹具插入到堆叠中的端部之间的间隙中。