公开(公告)号：US20160276486A1

公开(公告)日：2016-09-22

申请号：US15070306

申请日：2016-03-15

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Masami JINTYOU ,  Daisuke KUROSAKI ,  Takahiro IGUCHI ,  Naoto GOTO ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/49 ,  H01L29/04 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78696

Abstract: To suppress a change in electrical characteristics and improve reliability in a transistor including an oxide semiconductor film. Provided is a semiconductor device including a transistor including a first gate electrode, a first insulating film over the first gate electrode, a first oxide semiconductor film over the first insulating film, a source electrode electrically connected to the first oxide semiconductor film, a drain electrode electrically connected to the first oxide semiconductor film, a second insulating film over the first oxide semiconductor film, a second oxide semiconductor film as a second gate electrode over the second insulating film, and a third insulating film over the second oxide semiconductor film. The second insulating film includes an excess oxygen region having a concentration gradient.

Abstract translation: 抑制包含氧化物半导体膜的晶体管的电特性变化和提高可靠性。 本发明提供一种半导体器件，包括晶体管，其包括第一栅电极，第一栅电极上的第一绝缘膜，第一绝缘膜上的第一氧化物半导体膜，电连接到第一氧化物半导体膜的源电极，漏电极 电连接到第一氧化物半导体膜，在第一氧化物半导体膜上方的第二绝缘膜，在第二绝缘膜上的作为第二栅电极的第二氧化物半导体膜，以及在第二氧化物半导体膜上的第三绝缘膜。 第二绝缘膜包括具有浓度梯度的过量氧区域。

公开(公告)号：US20160260837A1

公开(公告)日：2016-09-08

申请号：US15058832

申请日：2016-03-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Yasuharu HOSAKA ,  Masami JINTYOU ,  Takahiro IGUCHI ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L21/02 ,  H01L29/24 ,  H01L29/04

CPC classification number: H01L29/7869 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78696

Abstract: To suppress a change in electrical characteristics in a transistor including an oxide semiconductor film. The transistor includes a first gate electrode, a first insulating film, an oxide semiconductor film, a source electrode, a drain electrode, a second insulating film, a second gate electrode, and a third insulating film. The oxide semiconductor film includes a first oxide semiconductor film on the first gate electrode side, and a second oxide semiconductor film over the first oxide semiconductor film. The first oxide semiconductor film and the second oxide semiconductor film include In, M, and Zn (M is Al, Ga, Y, or Sn). In a region of the second oxide semiconductor film, the number of atoms of In is smaller than that in the first oxide semiconductor film. The second gate electrode includes at least one metal element included in the oxide semiconductor film.

Abstract translation: 抑制包含氧化物半导体膜的晶体管的电特性的变化。 晶体管包括第一栅电极，第一绝缘膜，氧化物半导体膜，源电极，漏电极，第二绝缘膜，第二栅电极和第三绝缘膜。 氧化物半导体膜包括第一栅电极侧的第一氧化物半导体膜和第一氧化物半导体膜上的第二氧化物半导体膜。 第一氧化物半导体膜和第二氧化物半导体膜包括In，M和Zn（M是Al，Ga，Y或Sn）。 在第二氧化物半导体膜的区域中，In的原子数小于第一氧化物半导体膜中的原子数。 第二栅电极包括包含在氧化物半导体膜中的至少一个金属元件。

公开(公告)号：US20160133651A1

公开(公告)日：2016-05-12

申请号：US14982042

申请日：2015-12-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki MIYAKE ,  Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  H01L29/24 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/1237 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/7869

Abstract: A light-emitting device capable of suppressing variation in luminance among pixels is provided. A light-emitting device includes a pixel and first and second circuits. The first circuit has a function of generating a signal including a value of current extracted from the pixel. The second circuit has a function of correcting an image signal by the signal. The pixel includes at least a light-emitting element and first and second transistors. The first transistor has a function of controlling supply of the current to the light-emitting element by the image signal. The second transistor has a function of controlling extraction of the current from the pixel. A semiconductor film of each of the first and second transistors includes a first semiconductor region overlapping with a gate, a second semiconductor region in contact with a source or a drain, and a third semiconductor region between the first and second semiconductor regions.

公开(公告)号：US20150372022A1

公开(公告)日：2015-12-24

申请号：US14733052

申请日：2015-06-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi OKAZAKI ,  Junichi KOEZUKA ,  Masami JINTYOU ,  Takahiro IGUCHI

IPC: H01L27/12 ,  H01L29/51

CPC classification number: H01L27/1225 ,  H01L29/513 ,  H01L29/66969 ,  H01L29/7869

Abstract: A change in electrical characteristics can be inhibited and reliability can be improved in a semiconductor device including an oxide semiconductor. The semiconductor device including an oxide semiconductor film includes a first insulating film, the oxide semiconductor film over the first insulating film, a second insulating film over the oxide semiconductor film, and a third insulating film over the second insulating film. The second insulating film includes oxygen and silicon, the third insulating film includes nitrogen and silicon, and indium is included in a vicinity of an interface between the second insulating film and the third insulating film.

Abstract translation: 在包括氧化物半导体的半导体器件中，可以抑制电特性的变化并提高可靠性。 包括氧化物半导体膜的半导体器件包括第一绝缘膜，第一绝缘膜上的氧化物半导体膜，氧化物半导体膜上的第二绝缘膜，以及在第二绝缘膜上的第三绝缘膜。 第二绝缘膜包括氧和硅，第三绝缘膜包括氮和硅，并且铟包括在第二绝缘膜和第三绝缘膜之间的界面附近。

公开(公告)号：US20150263174A1

公开(公告)日：2015-09-17

申请号：US14640379

申请日：2015-03-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Yukinori SHIMA ,  Masami JINTYOU ,  Daisuke KUROSAKI ,  Masataka NAKADA

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/24

CPC classification number: H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/36 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78621 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: In a semiconductor device including a transistor, the transistor is provided over a first insulating film, and the transistor includes an oxide semiconductor film over the first insulating film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the oxide semiconductor film and the gate electrode, and a source and a drain electrodes electrically connected to the oxide semiconductor film. The first insulating film includes oxygen. The second insulating film includes hydrogen. The oxide semiconductor film includes a first region in contact with the gate insulating film and a second region in contact with the second insulating film. The first insulating film includes a third region overlapping with the first region and a fourth region overlapping with the second region. The impurity element concentration of the fourth region is higher than that of the third region.

Abstract translation: 在包括晶体管的半导体器件中，晶体管设置在第一绝缘膜上，并且晶体管包括在第一绝缘膜上的氧化物半导体膜，氧化物半导体膜上的栅极绝缘膜，栅极绝缘膜上的栅电极 ，在氧化物半导体膜和栅电极之上的第二绝缘膜，以及电连接到氧化物半导体膜的源极和漏极。 第一绝缘膜包括氧。 第二绝缘膜包括氢。 氧化物半导体膜包括与栅极绝缘膜接触的第一区域和与第二绝缘膜接触的第二区域。 第一绝缘膜包括与第一区域重叠的第三区域和与第二区域重叠的第四区域。 第四区域的杂质元素浓度高于第三区域的杂质元素浓度。

公开(公告)号：US20150221777A1

公开(公告)日：2015-08-06

申请号：US14684774

申请日：2015-04-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshiaki OIKAWA ,  Masayuki KAJIWARA ,  Masataka NAKADA ,  Masami JINTYOU ,  Shunpei YAMAZAKI

IPC: H01L29/786

CPC classification number: H01L27/1266 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/3114 ,  H01L27/1214 ,  H01L29/78606 ,  H01L29/78666 ,  H01L29/78669 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/19041 ,  H01L2924/00

Abstract: An object is to improve water resistance and reliability of a semiconductor device by reducing the degree of peeling of a film. In a semiconductor device, a first inorganic insulating layer, a semiconductor element layer, a second inorganic insulating layer, an organic insulating layer, and a third inorganic insulating layer are sequentially stacked over a substrate. The second inorganic insulating layer is in contact with the first inorganic insulating layer in an opening portion provided in the semiconductor element layer. The third inorganic insulating layer is in contact with the second inorganic insulating layer in an opening portion provided in the organic insulating layer. In a region where the second inorganic insulating layer and the third inorganic insulating layer are in contact with each other, the second inorganic insulating layer has a plurality of irregularities or openings.

公开(公告)号：US20140291672A1

公开(公告)日：2014-10-02

申请号：US14220681

申请日：2014-03-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masami JINTYOU ,  Yasutaka NAKAZAWA ,  Yukinori SHIMA

IPC: H01L27/12

Abstract: The stability of steps of processing a wiring formed using copper or the like is increased. The concentration of impurities in a semiconductor film is reduced. Electrical characteristics of a semiconductor device are improved. A semiconductor device includes a semiconductor film, a pair of first protective films in contact with the semiconductor film, a pair of conductive films containing copper or the like in contact with the pair of first protective films, a pair of second protective films in contact with the pair of conductive films on the side opposite the pair of first protective films, a gate insulating film in contact with the semiconductor film, and a gate electrode overlapping with the semiconductor film with the gate insulating film therebetween. In a cross section, side surfaces of the pair of second protective films are located on the outer side of side surfaces of the pair of conductive films.

Abstract translation: 处理使用铜等形成的布线的步骤的稳定性增加。 半导体膜中的杂质浓度降低。 提高了半导体器件的电气特性。 半导体器件包括半导体膜，与半导体膜接触的一对第一保护膜，与一对第一保护膜接触的包含铜等的一对导电膜，与第一保护膜接触的一对第二保护膜 一对导电膜位于与该对第一保护膜相对的一侧上，与该半导体膜接触的栅极绝缘膜以及与该半导体膜重叠的栅电极与该栅极绝缘膜之间。 在横截面中，一对第二保护膜的侧面位于一对导电膜的侧面的外侧。

公开(公告)号：US20140209897A1

公开(公告)日：2014-07-31

申请号：US14161975

申请日：2014-01-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daisuke KUBOTA ,  Ryo HATSUMI ,  Masami JINTYOU ,  Takumi SHIGENOBU ,  Naoto GOTO

IPC: H01L29/417 ,  H01L29/786

CPC classification number: H01L27/1255 ,  G02F1/13306 ,  G02F1/133305 ,  G02F1/133345 ,  G02F1/13338 ,  G02F1/133512 ,  G02F1/1339 ,  G02F1/1341 ,  G02F1/1343 ,  G02F1/136213 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133357 ,  G02F2001/13415 ,  G06F3/0412 ,  G06F3/044 ,  G06F2203/04108 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/127 ,  H01L28/60 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/78633 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device having a high aperture ratio and including a capacitor capable of increasing the charge capacity is provided. A semiconductor device includes a transistor over a substrate, a first light-transmitting conductive film over the substrate, an oxide insulating film covering the transistor and having an opening over the first light-transmitting conductive film, a nitride insulating film over the oxide insulating film and in contact with the first light-transmitting conductive film in the opening, a second light-transmitting conductive film connected to the transistor and having a depressed portion in the opening, and an organic resin film with which the depressed portion of the second light-transmitting conductive film is filled.

Abstract translation: 提供了具有高开口率并且包括能够增加充电容量的电容器的半导体器件。 半导体器件包括：衬底上的晶体管，衬底上的第一透光导电膜，覆盖晶体管的氧化物绝缘膜，并且在第一透光导电膜上具有开口;氧化物绝缘膜上的氮化物绝缘膜 并且与开口部中的第一透光性导电膜接触，与该晶体管连接并具有开口部的凹部的第二透光性导电膜，以及第二透光性导电膜， 传输导电膜被填充。

公开(公告)号：US20250098439A1

公开(公告)日：2025-03-20

申请号：US18729577

申请日：2023-01-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu HOSAKA ,  Yukinori SHIMA ,  Masami JINTYOU ,  Masataka NAKADA ,  Junichi KOEZUKA ,  Kenichi OKAZAKI

IPC: H10K59/124 ,  H10K59/123

Abstract: A display apparatus with high definition is provided. The display apparatus includes a transistor, a light-emitting device and a first insulating layer. The transistor includes a semiconductor layer, first to third conductive layers, and second and third insulating layers. The second insulating layer is provided over the first conductive layer and includes a first opening reaching the first conductive layer. The second conductive layer is provided over the second insulating layer and includes a second opening in a region overlapping with the first opening. The semiconductor layer is in contact with the top surface of the first conductive layer, the side surface of the second insulating layer, and the top surface and the side surface of the second conductive layer. The third insulating layer is provided over the semiconductor layer. The third conductive layer is provided over the third insulating layer. The first insulating layer is provided over the transistor. The first insulating layer and the third insulating layer include a third opening reaching the second conductive layer. The light-emitting device is provided over the first insulating layer and includes a pixel electrode, a common electrode, and an EL layer. The pixel electrode is electrically connected to the second conductive layer through the third opening. The EL layer includes a region in contact with the top surface and the side surface of the pixel electrode.

公开(公告)号：US20250098417A1

公开(公告)日：2025-03-20

申请号：US18828036

申请日：2024-09-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masami JINTYOU ,  Daisuke KUROSAKI ,  Shiori TAMURA ,  Junichi KOEZUKA ,  Takahiro IGUCHI ,  Eiji SHIODA

IPC: H10K59/121 ,  H10K59/12

Abstract: A semiconductor device includes first to third insulating layers and a transistor including a semiconductor layer, first to fourth conductive layers, and fourth to sixth insulating layers. The first conductive layer, the first insulating layer, the third conductive layer, the fifth insulating layer, the second insulating layer, the third insulating layer, and the second conductive layer overlap in this order. The first to third insulating layers and the second and third conductive layers include an opening reaching the first conductive layer. In the opening, the first insulating layer includes a protruding portion, and the fourth insulating layer is in contact with the top surface of the first insulating layer and side surfaces of the fifth insulating layer and the second insulating layer. The fifth insulating layer, an oxide of the third conductive layer, is in contact with top and side surfaces of the third conductive layer. The semiconductor layer is in contact with the top surfaces of the first and second conductive layers and a side surface of the fourth insulating layer. The sixth insulating layer is in contact with the top surface of the semiconductor layer. The fourth conductive layer is over and in contact with the sixth insulating layer to overlap with the opening.