公开(公告)号：US20240107845A1

公开(公告)日：2024-03-28

申请号：US18276604

申请日：2022-02-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Yasumasa YAMANE ,  Ryota HODO

IPC: H10K59/35 ,  H10K71/20 ,  H10K71/60

CPC classification number: H10K59/353 ,  H10K59/352 ,  H10K71/233 ,  H10K71/60

Abstract: Provided is a high-resolution or high-definition display apparatus. The display apparatus includes a first light-emitting element, a second light-emitting element, and a sidewall. The first and second light-emitting elements each include a pixel electrode, a first light-emitting layer over the pixel electrode, an intermediate layer over the first light-emitting layer, a second light-emitting layer over the intermediate layer, and a common electrode over the second light-emitting layer. That is, the first and second light-emitting elements can have tandem structures. The pixel electrode, the first light-emitting layer, the intermediate layer, and the second light-emitting layer are separately provided between the light-emitting elements. The first light-emitting element and the second light-emitting element are adjacent to each other, and the sidewall is provided between the first light-emitting element and the second light-emitting element. The sidewall is provided to cover at least part of a side surface of the pixel electrode.

公开(公告)号：US20240057404A1

公开(公告)日：2024-02-15

申请号：US18271541

申请日：2022-01-17

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Takayuki IKEDA ,  Kenichi OKAZAKI ,  Yasumasa YAMANE

IPC: H10K59/124 ,  H10K59/35 ,  H10K50/19 ,  H10K50/13

CPC classification number: H10K59/124 ,  H10K59/353 ,  H10K50/19 ,  H10K50/13

Abstract: A high-resolution display device is provided. A display device with both high display quality and high resolution is provided. The display device includes a first light-emitting element and a second light-emitting element. The first light-emitting element includes a first pixel electrode, a first EL layer, and a common electrode. The second light-emitting element includes a second pixel electrode, a second EL layer, and the common electrode. An insulating layer is included between the first pixel electrode and the second pixel electrode. The insulating layer includes a first region overlapping with the first EL layer, a second region overlapping with the second EL layer, and a third region positioned between the first region and the second region. A side surface of the first EL layer and a side surface of the second EL layer are positioned over the insulating layer and are provided to face each other. The common electrode is provided along the side surface of the first EL layer, the side surface of the second EL layer, and a top surface of the insulating layer. A width of the insulating layer is greater than or equal to 2 times and less than or equal to 4 times that of a distance between the first pixel electrode and the second pixel electrode.

公开(公告)号：US20220223671A1

公开(公告)日：2022-07-14

申请号：US17570487

申请日：2022-01-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Takayuki IKEDA ,  Kenichi OKAZAKI ,  Yasumasa YAMANE ,  Hajime KIMURA ,  Tatsuya ONUKI

IPC: H01L27/32 ,  H01L51/56

Abstract: A novel display panel that is highly convenient, useful, or reliable can be provided. The display panel includes a first light-emitting device, a second light-emitting device, a first insulating film, and a conductive film. The first light-emitting device includes a first electrode and a second electrode; the first electrode includes a first region overlapping with the second electrode and a second region outside the first region. The second light-emitting device includes a third electrode and a fourth electrode, and the third electrode includes a third region overlapping with the fourth electrode and a fourth region outside the third region. The first insulating film is in contact with the second region and the fourth region, and the first insulating film includes a first opening and a second opening. The first opening overlaps with the second electrode and the second opening overlaps with the fourth electrode. The conductive film is electrically connected to the second electrode and the fourth electrode in the first opening and in the second opening, respectively.

公开(公告)号：US20210175361A1

公开(公告)日：2021-06-10

申请号：US16768810

申请日：2018-11-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Takuya HANDA ,  Yasuharu HOSAKA ,  Shota SAMBONSUGE ,  Yasumasa YAMANE ,  Kenichi OKAZAKI

IPC: H01L29/786 ,  H01L29/24

Abstract: A semiconductor device with improved reliability is provided. The semiconductor device includes a first oxide, a second oxide over the first oxide, a third oxide over the second oxide, and an insulator over the third oxide. The second oxide contains In, an element M (M is Al, Ga, Y, or Sn), and Zn. The first oxide and the third oxide each include a region whose In concentration is lower than that in the second oxide.

公开(公告)号：US20200227566A1

公开(公告)日：2020-07-16

申请号：US16833918

申请日：2020-03-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hideomi SUZAWA ,  Tetsuhiro TANAKA ,  Hirokazu WATANABE ,  Yuhei SATO ,  Yasumasa YAMANE ,  Daisuke MATSUBAYASHI

IPC: H01L29/786 ,  H01L29/45 ,  H01L29/66

Abstract: A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.

公开(公告)号：US20190139783A1

公开(公告)日：2019-05-09

申请号：US16093268

申请日：2017-04-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Kazutaka KURIKI ,  Yuji EGI ,  Noritaka ISHIHARA ,  Yusuke NONAKA ,  Yasumasa YAMANE ,  Ryo TOKUMARU ,  Daisuke MATSUBAYASHI

IPC: H01L21/4757 ,  H01L27/105 ,  H01L27/12 ,  H01L29/66 ,  H01L21/443 ,  H01L21/477 ,  H01L21/02 ,  H01L29/786 ,  H01J37/32

Abstract: A semiconductor device having high reliability is provided.A first conductor is formed, a first insulator is formed over the first conductor, a second insulator is formed over the first insulator, a third insulator is formed over the second insulator, microwave-excited plasma treatment is performed on the third insulator, an island-shaped first oxide semiconductor is formed over the third insulator and a second conductor and a third conductor are formed over the first oxide semiconductor, an oxide semiconductor film is formed over the first oxide semiconductor, the second conductor, and the third conductor, a first insulating film is formed over the oxide semiconductor film, a conductive film is formed over the first insulating film, a fourth insulator and a fourth conductor are formed by partly removing the first insulating film and the conductive film, a second insulating film is formed to cover the oxide semiconductor film, the fourth insulator, and the fourth conductor, a second oxide semiconductor and a fifth insulator are formed by partly removing the oxide semiconductor film and the second insulating film to expose a side surface of the first oxide semiconductor, a sixth insulator is formed in contact with the side surface of the first oxide semiconductor and a side surface of the second oxide semiconductor, a seventh insulator is formed in contact with the sixth insulator, and heat treatment is performed.

公开(公告)号：US20170309752A1

公开(公告)日：2017-10-26

申请号：US15488626

申请日：2017-04-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Daisuke MATSUBAYASHI ,  Ryo TOKUMARU ,  Yasumasa YAMANE ,  Kiyofumi OGINO ,  Taichi ENDO ,  Hajime KIMURA

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L27/105

CPC classification number: H01L29/78606 ,  H01L27/1052 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869

Abstract: A highly reliable semiconductor device is provided. The semiconductor device includes a first barrier insulating film; a first gate electrode thereover; a first gate insulating film thereover; an oxide semiconductor film thereover; source and drain electrodes over the oxide semiconductor film; a second gate insulating film over the oxide semiconductor film; a second gate electrode over the second gate insulating film; a second barrier insulating film that covers the oxide semiconductor film, the source and the drain electrodes, and the second gate electrode, and is in contact with side surfaces of the oxide semiconductor film and the source and drain electrodes; and a third barrier insulating film thereover. The first to third barrier insulating films are less likely to transmit hydrogen, water, and oxygen than the first and second gate insulating films. The third barrier insulating film is thinner than the second barrier insulating film. The source and drain electrodes each includes a conductive oxide film in contact with the oxide semiconductor film. The conductive oxide film has more oxygen vacancies than the oxide semiconductor film.

公开(公告)号：US20170309721A1

公开(公告)日：2017-10-26

申请号：US15642400

申请日：2017-07-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hideomi SUZAWA ,  Hiroshi FUJIKI ,  Hiromichi GODO ,  Yasumasa YAMANE

IPC: H01L29/49 ,  H01L29/45 ,  H01L29/24 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L29/4908 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/45 ,  H01L29/7869

Abstract: The reliability of a semiconductor device is increased by suppression of a variation in electric characteristics of a transistor as much as possible. As a cause of a variation in electric characteristics of a transistor including an oxide semiconductor, the concentration of hydrogen in the oxide semiconductor, the density of oxygen vacancies in the oxide semiconductor, or the like can be given. A source electrode and a drain electrode are formed using a conductive material which is easily bonded to oxygen. A channel formation region is formed using an oxide layer formed by a sputtering method or the like under an atmosphere containing oxygen. Thus, the concentration of hydrogen in a stack, in particular, the concentration of hydrogen in a channel formation region can be reduced.

公开(公告)号：US20170294542A1

公开(公告)日：2017-10-12

申请号：US15632764

申请日：2017-06-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Tetsuhiro TANAKA ,  Akihisa SHIMOMURA ,  Yasumasa YAMANE ,  Ryo TOKUMARU ,  Yuhei SATO ,  Kazuhiro TSUTSUI

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/49 ,  H01L29/51 ,  H01L29/423

CPC classification number: H01L29/7869 ,  C23C14/08 ,  C23C14/3414 ,  H01L21/02266 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1207 ,  H01L27/1225 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78696 ,  H01L2029/42388

Abstract: A transistor with stable electrical characteristics is provided. The transistor includes a first insulator over a substrate; first to third oxide insulators over the first insulator; a second insulator over the third oxide insulator; a first conductor over the second insulator; and a third insulator over the first conductor. An energy level of a conduction band minimum of each of the first and second oxide insulators is closer to a vacuum level than that of the oxide semiconductor is. An energy level of a conduction band minimum of the third oxide insulator is closer to the vacuum level than that of the second oxide insulator is. The first insulator contains oxygen. The number of oxygen molecules released from the first insulator measured by thermal desorption spectroscopy is greater than or equal to 1E14 molecules/cm2 and less than or equal to 1E16 molecules/cm2.

公开(公告)号：US20170062192A1

公开(公告)日：2017-03-02

申请号：US15234347

申请日：2016-08-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi OOTA ,  Takuya KAWATA ,  Yasumasa YAMANE ,  Yuta ENDO

IPC: H01J37/34 ,  C23C14/35 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01J37/3405 ,  C23C14/08 ,  C23C14/345 ,  C23C14/35 ,  C23C14/352 ,  C23C14/56 ,  C23C14/564 ,  H01J37/3435 ,  H01J37/3452 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: An oxide with high crystallinity is provided. An oxide having a crystal structure with few defects is provided. An oxide with a low density of defect states is provided. An oxide with a low impurity concentration is provided. A film forming apparatus capable of forming a film of the above-described oxide can be provided. The film forming apparatus includes a target holder, a substrate holder, a first power source, and a second power source. The target holder is electrically connected to the first power source, the substrate holder is electrically connected to the second power source, and the second power source is configured to apply a potential that is higher than a ground potential.

Abstract translation: 提供了高结晶度的氧化物。 提供具有缺陷少的晶体结构的氧化物。 提供了具有低密度缺陷状态的氧化物。 提供了具有低杂质浓度的氧化物。 可以提供能够形成上述氧化物的膜的成膜装置。 成膜设备包括目标保持器，衬底保持器，第一电源和第二电源。 靶保持器电连接到第一电源，衬底保持器电连接到第二电源，并且第二电源被配置为施加高于地电位的电位。