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41.发明申请PATTERNING PROCESS, RESIST COMPOSITION, POLYMER, AND POLYMERIZABLE ESTER COMPOUND 有权花纹法，抗菌组合物，聚合物和聚合酯化合物公开(公告)号：US20130157194A1
公开(公告)日：2013-06-20
申请号：US13707075
申请日：2012-12-06
IPC分类号： G03F7/004
CPC分类号： G03F7/004 , C08F20/10 , C08F220/28 , C08F232/08 , G03F7/0392 , G03F7/0395 , G03F7/0397 , G03F7/2041 , G03F7/325 , C08F2220/283 , C08F220/20 , C08F222/06
摘要： A negative pattern is formed by applying a resist composition onto a substrate, prebaking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to dissolve the unexposed region of resist film. The resist composition comprising a polymer adapted to form a lactone ring under the action of an acid so that the polymer may reduce its solubility in an organic solvent developer, an acid generator, and an organic solvent displays a high dissolution contrast between the unexposed region of promoted dissolution and the exposed region of inhibited dissolution.
摘要翻译： 通过将抗蚀剂组合物施加到基材上，预烘烤，暴露于高能辐射，烘烤（PEB）和在有机溶剂显影剂中显影曝光的抗蚀剂膜以溶解抗蚀剂膜的未曝光区域来形成负图案。 抗蚀剂组合物包含适于在酸的作用下形成内酯环的聚合物，使得聚合物可降低其在有机溶剂显影剂，酸产生剂和有机溶剂中的溶解度，显示在 促进溶解和暴露区域的抑制溶解。
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公开(公告)号：US20240360069A1
公开(公告)日：2024-10-31
申请号：US18635874
申请日：2024-04-15
IPC分类号： C07C69/76 , C07C25/18 , C07C381/12 , C07D333/76 , C08F220/18 , C08F220/22 , G03F7/038 , G03F7/039
CPC分类号： C07C69/76 , C07C25/18 , C07C381/12 , C07D333/76 , C08F220/1806 , C08F220/1807 , C08F220/22 , G03F7/038 , G03F7/039
摘要： The present invention is a monomer represented by the following general formula (a)-1M or (a)-2M. This provides: a resist material having higher sensitivity and higher resolution than conventional positive resist materials, small edge roughness and size variation, and excellent pattern profile after exposure; a monomer to be an ingredient for the resist material; a resist composition containing the resist material; and a patterning process.
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公开(公告)号：US12072627B2
公开(公告)日：2024-08-27
申请号：US18197244
申请日：2023-05-15
发明人： Teppei Adachi , Shinya Yamashita , Masaki Ohashi , Tomohiro Kobayashi , Kenichi Oikawa , Takayuki Fujiwara
IPC分类号： G03F7/004 , C07C381/12 , C07D307/93 , C07D327/04 , C07D493/18 , C08F220/18 , G03F7/038 , G03F7/039 , G03F7/11 , G03F7/20
CPC分类号： G03F7/0045 , C07C381/12 , C07D307/93 , C07D327/04 , C07D493/18 , C08F220/1807 , C08F220/1808 , G03F7/0382 , G03F7/0397 , G03F7/11 , G03F7/2006 , G03F7/2041
摘要： A resist composition containing: (A) a resin containing a repeating unit having an acid-labile group; (B) a photo-acid generator shown by a general formula (B-1); and (C) a solvent, where W1 represents a cyclic divalent hydrocarbon group having 4 to 12 carbon atoms and containing a heteroatom; W2 represents a cyclic monovalent hydrocarbon group having 4 to 14 carbon atoms and not containing a heteroatom; Rf represents a divalent organic group shown by the following general formula; and M+ represents an onium cation. This provides a resist composition and a patterning process that uses the resist composition that show a particularly favorable mask dimension dependency (mask error factor: MEF), LWR, and critical dimension uniformity (CDU) particularly in photolithography where a high-energy beam such as an ArF excimer laser beam is used as a light source.
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公开(公告)号：US20190163065A1
公开(公告)日：2019-05-30
申请号：US16194593
申请日：2018-11-19
摘要： A pattern having a good balance of sensitivity, resolution and LWR is formed by providing a resist film comprising a base resin comprising recurring units having a C4-C6 tertiary alkoxy or alkoxycarbonyl group as an acid labile group and recurring units capable of generating a backbone-bound acid upon exposure, exposing the resist film to radiation, optionally post-exposure baking the resist film at a low temperature of 30-70° C., and developing the film.
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公开(公告)号：US09182668B2
公开(公告)日：2015-11-10
申请号：US14212948
申请日：2014-03-14
CPC分类号： G03F7/038 , C08F220/24 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/0397 , G03F7/2041 , G03F7/325 , G03F7/40
摘要： A negative pattern is formed by applying a resist composition onto a substrate, prebaking, exposing to high-energy radiation, PEB, and developing the exposed resist film in an organic solvent developer to dissolve the unexposed region of resist film. The resist composition is based on a polymer comprising recurring units (a1) of formula (1) wherein R1 is H or CH3, R2 and R3 are H, F or a monovalent hydrocarbon group, R4 is H or a monovalent hydrocarbon group, R5 and R6 are a monovalent hydrocarbon group, X1 is a divalent hydrocarbon group, and k1=0 or 1. A fine hole or trench pattern can be formed therefrom.
摘要翻译： 通过将抗蚀剂组合物施加到基材上，预烘烤，暴露于高能辐射，PEB和在有机溶剂显影剂中显影曝光的抗蚀剂膜以溶解抗蚀剂膜的未曝光区域，形成负图案。 抗蚀剂组合物基于包含式（1）的重复单元（a1）的聚合物，其中R 1是H或CH 3，R 2和R 3是H，F或一价烃基，R 4是H或一价烃基，R 5和 R6是一价烃基，X1是二价烃基，k1 = 0或1.可以由其形成细孔或沟槽图案。
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公开(公告)号：US09104105B2
公开(公告)日：2015-08-11
申请号：US14268428
申请日：2014-05-02
CPC分类号： G03F7/038 , G03F1/32 , G03F7/0046 , G03F7/0395 , G03F7/0397 , G03F7/11 , G03F7/203 , G03F7/2041 , G03F7/325 , G03F7/70466
摘要： A negative pattern is formed by applying a resist composition onto a substrate, prebaking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to dissolve the unexposed region of resist film. The resist composition comprising a polymer comprising recurring units of cycloolefin having a hydroxyl group substituted with an acid labile group, an acid generator, and an organic solvent displays a high dissolution contrast and high etch resistance.
摘要翻译： 通过将抗蚀剂组合物施加到基材上，预烘烤，暴露于高能辐射，烘烤（PEB）和在有机溶剂显影剂中显影曝光的抗蚀剂膜以溶解抗蚀剂膜的未曝光区域来形成负图案。 包含含有被酸不稳定基团，酸发生剂和有机溶剂取代的羟基的环烯烃的重复单元的聚合物的抗蚀剂组合物显示出高的溶解对比度和高耐蚀刻性。
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公开(公告)号：US08956803B2
公开(公告)日：2015-02-17
申请号：US14099678
申请日：2013-12-06
CPC分类号： G03F7/0397 , G03F7/0045
摘要： The present invention provides a sulfonium salt used in a resist composition that can give a pattern having a high resolution, especially an excellent rectangularity of a pattern form and a small roughness, while not readily generating a defect, in the photolithography using a high energy beam as a light source; a resist composition that contains the sulfonium salt; and a patterning process using this resist composition, wherein the sulfonium salt is shown by the following general formula (1a), wherein each of R and R0 independently represents a hydrogen atom, or a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 30 carbon atoms which may be optionally substituted by a heteroatom or interposed by a heteroatom.
摘要翻译： 本发明提供了一种抗蚀剂组合物中使用的锍盐，其可以在使用高能量束的光刻法中产生具有高分辨率，特别是图案形式的极好的矩形性和小的粗糙度，同时不容易产生缺陷的图案 作为光源; 含有锍盐的抗蚀剂组合物; 以及使用该抗蚀剂组合物的图案化工序，其中，所述锍盐由以下通式（1a）表示，其中R和R0各自独立地表示氢原子，或者具有1〜 30个碳原子，其可以任选地被杂原子取代或被杂原子插入。
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48.发明授权Fluorinated monomer of cyclic acetal structure, polymer, resist protective coating composition, resist composition, and patterning process 有权环状缩醛结构的氟化单体，聚合物，抗蚀剂保护涂层组合物，抗蚀剂组合物和图案化工艺公开(公告)号：US08933251B2
公开(公告)日：2015-01-13
申请号：US13847667
申请日：2013-03-20
发明人： Takeru Watanabe , Satoshi Shinachi , Takeshi Kinsho , Koji Hasegawa , Yuji Harada , Jun Hatakeyama , Kazunori Maeda , Tomohiro Kobayashi
IPC分类号： C07D319/06 , C07D309/10 , C07D311/02 , C07D311/96 , C07D307/20
CPC分类号： G03F7/11 , C07D307/04 , C07D307/77 , C07D315/00 , C07D319/06 , C08F14/18 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041 , C08F2/00
摘要： A fluorinated monomer of cyclic acetal structure has formula (1) wherein R is a C1-C20 alkyl group which may be substituted with halogen or separated by oxygen or carbonyl, and Z is a divalent organic group which forms a ring with alkylenoxy and contains a polymerizable unsaturated group. A polymer derived from the fluorinated monomer may be endowed with appropriate water repellency, water sliding property, lipophilicity, acid lability and hydrolyzability and is useful in formulating a protective coating composition and a resist composition.
摘要翻译： 环状缩醛结构的氟化单体具有式（1），其中R是可以被卤素取代或被氧或羰基分离的C1-C20烷基，Z是与亚烷氧基形成环的二价有机基团，并含有 可聚合不饱和基团。 衍生自氟化单体的聚合物可赋予适当的防水性，水滑性，亲油性，酸性和水解性，并且可用于配制保护涂料组合物和抗蚀剂组合物。
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49.发明授权Acid generator, chemically amplified resist composition, and patterning process 有权酸发生剂，化学放大抗蚀剂组合物和图案化工艺公开(公告)号：US08900796B2
公开(公告)日：2014-12-02
申请号：US13768377
申请日：2013-02-15
CPC分类号： G03F7/0045 , G03F7/004 , G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/20 , G03F7/2041
摘要： The present invention provides an acid generator generates a sulfonic acid represented by the following general formula (1) in response to high-energy beam or heat:To provide a novel acid generator which is suitably used as an acid generator for a resist composition, which solves the problems of LER and a depth of focus and can be effectively and widely used particularly without degradation of a resolution, a chemically amplified resist composition using the same, and a patterning process.
摘要翻译： 本发明提供一种酸反应器，其响应于高能束或热而产生由以下通式（1）表示的磺酸：提供适合用作抗蚀剂组合物的酸发生剂的新型酸产生剂，其中 解决了LER和焦点深度的问题，可以在不降低分辨率的情况下进行有效且广泛的应用，使用其的化学放大抗蚀剂组合物和图案化工艺。
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公开(公告)号：US20140255843A1
公开(公告)日：2014-09-11
申请号：US14182682
申请日：2014-02-18
发明人： Tomohiro Kobayashi , Kazuhiro Katayama , Kentaro Kumaki , Chuanwen Lin , Masaki Ohashi , Masahiro Fukushima
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0395 , G03F7/0397 , G03F7/11 , G03F7/2041 , G03F7/325 , G03F7/38 , G03F7/40
摘要： A negative pattern is formed by coating a resist composition comprising (A) a polymer having an acid labile group, adapted to change its polarity under the action of acid, (B) a photoacid generator, and (C) an organic solvent onto a substrate, baking, exposing the resist film to high-energy radiation, PEB, and developing in an organic solvent-based developer to selectively dissolve the unexposed region of resist film. The photoacid generator has the formula: R1—COOC(CF3)2—CH2SO3−R2R3R4S+ wherein R1 is a monovalent hydrocarbon group, R2, R3 and R4 are an alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl group, or may bond together to form a ring with the sulfur atom.
摘要翻译： 通过涂布抗蚀剂组合物形成负面图案，该抗蚀剂组合物包含（A）具有酸不稳定基团的聚合物，其适于在酸的作用下改变其极性，（B）光致酸产生剂和（C）有机溶剂在基材上 ，烘烤，将抗蚀剂膜暴露于高能量辐射，PEB，并在有机溶剂型显影剂中显影以选择性地溶解抗蚀剂膜的未曝光区域。 光致酸发生器具有下式：R1-COOC（CF3）2-CH2SO3-R2R3R4S +其中R1是一价烃基，R2，R3和R4是烷基，烯基，氧代烷基，芳基，芳烷基或芳氧基烷基，或可以键合在一起 以形成具有硫原子的环。
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