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公开(公告)号：US20230062627A1
公开(公告)日：2023-03-02
申请号：US17861629
申请日：2022-07-11
发明人： Takeru Watanabe , Takeshi Kinsho
IPC分类号： C07C45/51 , C07C41/48 , C07C43/305
摘要： The present invention relates to an acetal compound of the following general formula (1) and an acetal compound of the following general formula (2). The present invention relates to processes for preparing the acetal compound (2), comprising subjecting the acetal compound (1) to a hydrogenation reaction to form the acetal compound (2). The present invention provides a process for preparing 2,3,4,4-tetramethylcyclopentanecarbaldehyde of the following formula (3), comprising subjecting the acetal compound (2) to a hydrolysis reaction to form 2,3,4,4-tetramethylcyclopentanecarbaldehyde (3).
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公开(公告)号：US11307497B2
公开(公告)日：2022-04-19
申请号：US16293150
申请日：2019-03-05
发明人： Seiichiro Tachibana , Takeru Watanabe , Keisuke Niida , Hiroko Nagai , Takashi Sawamura , Tsutomu Ogihara
IPC分类号： G03F7/025 , G03F7/11 , G03F7/09 , C07D335/12 , H01L21/027 , H01L21/311 , C08F38/00 , C07C15/56 , C07C41/01 , C07C215/46
摘要： A compound including two or more partial structures shown by the following general formula (1-1) in the molecule, wherein each Ar independently represents an aromatic ring optionally having a substituent or an aromatic ring that contains at least one nitrogen atom optionally having a substituent, and two Ars are optionally bonded with each other to form a ring structure; the broken line represents a bond with an organic group; B represents an anionic leaving group that is capable of forming a reactive cation due to effect of either or both of heat and acid. This provides a compound that is capable of curing under the film forming conditions in air or an inert gas without forming byproducts, and forming an organic under layer film that has good dry etching durability during substrate processing not only excellent characteristics of gap filling and planarizing a pattern formed on a substrate.
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公开(公告)号：US11022882B2
公开(公告)日：2021-06-01
申请号：US16013728
申请日：2018-06-20
发明人： Seiichiro Tachibana , Takeru Watanabe , Keisuke Niida , Hiroko Nagai , Takashi Sawamura , Tsutomu Ogihara , Alexander Edward Hess , Gregory Breyta , Daniel Paul Sanders , Rudy J. Wojtecki
IPC分类号： G03F7/025 , C07C13/54 , C07C43/23 , G03F7/039 , C08K5/00 , C08L49/00 , H01L21/027 , H01L21/308
摘要： A compound shown by the following general formula (1-1), AR1 and AR2 each independently represent an aromatic ring or an aromatic ring containing at least one nitrogen and/or sulfur atom, two AR1s, AR1 and AR2, or two AR2s are optionally bonded; AR3 represents a benzene, naphthalene, thiophene, pyridine, or diazine ring; A represents an organic group; B represents an anionic leaving group; Y represents a divalent organic group; “p” is 1 or 2; “q” is 1 or 2; “r” is 0 or 1; “s” is 2 to 4; when s=2, Z represents a single bond, divalent atom, or divalent organic group; and when s=3 or 4, Z represents a trivalent or quadrivalent atom or organic group. This compound cures to form an organic film, and also forms an organic under layer film.
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公开(公告)号：US10975042B2
公开(公告)日：2021-04-13
申请号：US16418154
申请日：2019-05-21
发明人： Yuki Suka , Yuji Harada , Shiori Nonaka , Kazuomi Sato , Takeru Watanabe , Takehiko Ishii
IPC分类号： B01D9/00 , C07D263/44
摘要： The present invention is a method for purifying an NCA, including the steps of: a) dissolving an NCA contaminated with impurities into a solvent which is a good solvent and is not a chlorinated solvent followed by stirring to precipitate an undissolved impurity to afford a suspension, b) adding an acidic filter aid having ability to trap a basic impurity to the obtained suspension followed by filtration and/or forming a fixed bed of the acidic filter aid having ability to trap a basic impurity followed by filtering the suspension to bring the suspension to be in contact with the acidic filter aid having ability to trap a basic impurity, and c) adding the obtained filtrate dropwise to a poor solvent for NCA to crystallize out the NCA in which the impurities are removed. This makes it possible to purify a low-purity NCA conveniently to afford a high-purity NCA.
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5.发明授权公开(公告)号：US10604618B2
公开(公告)日：2020-03-31
申请号：US16013672
申请日：2018-06-20
发明人： Seiichiro Tachibana , Takeru Watanabe , Keisuke Niida , Hiroko Nagai , Takashi Sawamura , Tsutomu Ogihara , Alexander Edward Hess , Gregory Breyta , Daniel Paul Sanders , Rudy J. Wojtecki
摘要： A compound includes two or more structures shown by the following general formula (1-1) in the molecule, “Ar” represents an aromatic ring or one that contains at least one nitrogen atom and/or sulfur atom optionally having a substituent, and two Ars are optionally bonded with each other to form a ring structure; the broken line represents a bond with Y; Y represents a divalent or trivalent organic group having 6 to 30 carbon atoms that contains an aromatic ring or a heteroaromatic ring optionally having a substituent, the bonds of which are located in a structure of the aromatic ring or the heteroaromatic ring; R represents a hydrogen atom or a monovalent group having 1 to 68 carbon atoms. This compound can be cured even in an inert gas not only in air atmosphere without forming byproducts, and can form an organic under layer film.
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公开(公告)号：US10429739B2
公开(公告)日：2019-10-01
申请号：US15359323
申请日：2016-11-22
IPC分类号： G03F7/004 , G03F7/32 , G03F7/09 , G03F7/039 , C09D149/00 , C09D165/00 , G03F7/20 , H01L21/02 , G03F7/16 , H01L21/027 , H01L21/3105 , C09D155/00 , C08G8/08 , G03F7/075 , H01L21/033
摘要： The present invention provides a compound for forming an organic film which has a minimum complex viscosity of 10 Pa·s or less when the complex viscosity is measured within a range of 50° C. to 300° C. This compound for forming an organic film can provide an organic film composition having high filling and planarizing properties.
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公开(公告)号：US10377775B2
公开(公告)日：2019-08-13
申请号：US14959088
申请日：2015-12-04
发明人： Yuki Suka , Yuji Harada , Takeru Watanabe , Shiori Nonaka
IPC分类号： C07F7/10 , C07F7/08 , C08G65/12 , C08G65/26 , C08G65/333
摘要： A method simply produces a narrowly distributed and high-purity polyalkylene glycol derivative having an amino group at an end without using a heavy metal catalyst. A method for producing a polyalkylene glycol derivative having an amino group at the end by reacting a compound represented by the general formula (V) with an alkylene oxide, then reacting a reaction product with an electrophile represented by the general formula (I), and deprotecting the obtained product without using a heavy metal: RA3O(RA4O)k-1RA4O−M+ (V) wherein RA3 represents a linear, branched, or cyclic hydrocarbon group having 1 to 20 carbon atoms; RA4 represents an alkylene group having 2 to 8 carbon atoms; k represents an integer of 2 to 5; and M represents an alkali metal; wherein RA1a and RA1b each independently represent a protective group of the amino group, or one of RA1a and RA1b represents H and the other represents a protective group of the amino group, or RA1a and RA1b bind to each other to form a cyclic protective group, and the protective group is deprotectable without using a heavy metal; RA2 represents a linear, branched, or cyclic hydrocarbon group having 1 to 6 carbon atoms; and X represents a leaving group.
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公开(公告)号：US10007183B2
公开(公告)日：2018-06-26
申请号：US14856014
申请日：2015-09-16
发明人： Seiichiro Tachibana , Daisuke Kori , Tsutomu Ogihara , Takeru Watanabe , Kazumi Noda , Toshiharu Yano
IPC分类号： G03F7/11 , G03F7/40 , G03F7/09 , H01L21/308 , C07C43/23 , G03F7/075 , C08F216/10 , C08G61/12 , C09D129/02 , C09D165/00 , G03F7/20 , G03F7/32 , C07C39/17 , C08K5/13 , H01L21/02 , H01L27/12 , H01L21/311 , H01L21/027
CPC分类号： G03F7/094 , C07C39/17 , C07C43/23 , C07C2603/18 , C08F216/10 , C08G61/12 , C08K5/13 , C09D7/63 , C09D129/02 , C09D165/00 , G03F7/0752 , G03F7/091 , G03F7/11 , G03F7/20 , G03F7/32 , G03F7/40 , H01L21/02118 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02271 , H01L21/0228 , H01L21/02318 , H01L21/0271 , H01L21/0274 , H01L21/0276 , H01L21/308 , H01L21/3081 , H01L21/3086 , H01L21/31138 , H01L21/31144 , H01L27/1203
摘要： The invention provides a compound for forming an organic film having a partial structure represented by the following formula (ii), wherein the ring structures Ar1, Ar2 and Ar3 each represent a substituted or unsubstituted benzene ring or naphthalene ring; e is 0 or 1; R0 represents a hydrogen atom or a linear, branched or cyclic monovalent organic group having 1 to 30 carbon atoms; L0 represents a linear, branched or cyclic divalent organic group having 1 to 32 carbon atoms; and the methylene group constituting L0 may be substituted by an oxygen atom or a carbonyl group. There can be provided an organic film composition for forming an organic film having high dry etching resistance as well as advanced filling/planarizing characteristics.
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公开(公告)号：US09899218B2
公开(公告)日：2018-02-20
申请号：US15149680
申请日：2016-05-09
发明人： Jun Hatakeyama , Takeru Watanabe , Daisuke Kori
IPC分类号： G03F7/11 , H01L21/033 , C09D161/06 , H01L21/311 , H01L29/66 , G03F7/004 , H01L21/027 , C08G8/20 , C08G8/36 , C08L61/12 , G03F7/039 , G03F7/075 , G03F7/09
CPC分类号： H01L21/0337 , C08G8/20 , C08G8/36 , C08K5/13 , C08K5/1535 , C08K5/1545 , C08L61/12 , C08L61/14 , G03F7/0046 , G03F7/0397 , G03F7/0757 , G03F7/091 , G03F7/094 , H01L21/027 , H01L21/033 , H01L21/0332 , H01L21/31111 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L29/66795
摘要： The present invention provides a resist under layer film composition containing a novolak resin having a repeating unit shown by the formula (1) and either or both of a novolak resin having a repeating unit shown by the formula (2) and a bisnaphthol derivative shown by the formula (3). There is provided a resist under layer film composition that is excellent in filling property, generates little outgas, and has excellent dry etching resistance and heat resistance.
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10.发明授权公开(公告)号：US09805943B2
公开(公告)日：2017-10-31
申请号：US15060934
申请日：2016-03-04
IPC分类号： G03F7/11 , H01L21/308 , C08F220/28 , C09D133/14 , H01L21/311 , H01L21/033 , H01L21/027 , H01L21/306 , C08F220/32 , G03F7/09
CPC分类号： H01L21/3086 , C08F220/28 , C08F220/32 , C08F2220/281 , C08F2220/325 , C09D133/14 , G03F7/094 , H01L21/0274 , H01L21/0276 , H01L21/0332 , H01L21/30604 , H01L21/3081 , H01L21/31116 , H01L21/31133 , H01L21/31138 , H01L21/31144
摘要： The invention provides a polymer for a resist under layer film composition, containing a repeating unit shown by the formula (1) and a repeating unit shown by the formula (3), wherein R01 independently represents a hydrogen atom or a methyl group; R02 represents a group selected from the formulae (1-1) to (1-3); R03 represents a saturated or unsaturated tertiary alkyl group having 4 to 20 carbon atoms and optionally containing an oxygen functional group; and A2 represents a single bond or a divalent linking group having 2 to 10 carbon atoms and containing an ester group, wherein the dotted line represents a bonding arm. There can be provided a polymer for a resist under layer film composition that is capable of forming a resist under layer film having good alkali aqueous hydrogen peroxide resistance, excellent filling and planarizing properties, and excellent dry etching property
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