公开(公告)号：US20100163915A1

公开(公告)日：2010-07-01

申请号：US12376425

申请日：2007-07-16

Applicant: Siegfried Herrmann ,  Berthold Hahn

Inventor： Siegfried Herrmann ,  Berthold Hahn

IPC: H01L33/64

CPC classification number: H01L33/0079 ,  H01L27/15 ,  H01L33/385 ,  H01L33/54 ,  H01L33/62 ,  H01L33/642 ,  H01L33/647 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: A thin-film semiconductor component having a carrier layer and a layer stack which is arranged on the carrier layer, the layer stack containing a semiconductor material and being provided for emitting radiation, wherein a heat dissipating layer provided for cooling the semiconductor component is applied on the carrier layer. A component assembly is also disclosed.

Abstract translation: 一种薄膜半导体部件，其具有载体层和层叠体，其布置在所述载体层上，所述层叠体包含半导体材料并且被设置用于发射辐射，其中将用于冷却所述半导体部件的散热层施加在 载体层。 还公开了一种组件组件。

公开(公告)号：US20100103650A1

公开(公告)日：2010-04-29

申请号：US12528960

申请日：2008-01-23

Applicant: Siegfried Herrmann ,  Berthold Hahn ,  Joerg Sorg ,  Stefan Gruber

Inventor： Siegfried Herrmann ,  Berthold Hahn ,  Joerg Sorg ,  Stefan Gruber

IPC: G09F13/04 ,  H01L33/00

CPC classification number: G02B6/0055 ,  G02B6/0018 ,  G02B6/0051 ,  G02B6/0073 ,  G02B6/0076

Abstract: An arrangement includes a semiconductor chip, which is designed to emit light during operation, and a cover layer, which lies across from the light-emitting surface of the semiconductor chip, such that light emitted from the semiconductor chip penetrates into the cover layer. In an area of the cover layer, overlapping with the chip, a light deflecting structure is provided by means of which light penetrating into the cover layer is deflected. The cover layer acts as an optical waveguide and is designed to emit the light such that it is distributed over the upper surface of cover layer.

Abstract translation: 一种装置，其包括：半导体芯片，其被设计为在操作期间发光;以及覆盖层，其覆盖半导体芯片的发光表面，使得从半导体芯片发射的光穿透到覆盖层。 在覆盖层的与芯片重叠的区域中，提供光偏转结构，通过该偏转结构，穿透到覆盖层中的光被偏转。 覆盖层用作光波导，并被设计成发射光，使得其分布在覆盖层的上表面上。

公开(公告)号：US20100072500A1

公开(公告)日：2010-03-25

申请号：US12525066

申请日：2007-01-22

Applicant: Siegfried Herrmann

Inventor： Siegfried Herrmann

IPC: H01L33/00

CPC classification number: H01L33/22 ,  B29C43/021 ,  B29C43/203 ,  B29L2011/0016 ,  H01L33/20 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A thin-film light-emitting diode chip with a layer stack having a first emission surface and an opposite second emission surface, so that the thin-film light-emitting diode chip has at least two main emission directions. Measures for improving the outcoupling of the light generated in the layer sequence are provided on both the first and the second main emission surface. A method is disclosed for manufacturing a thin-film light-emitting diode chip.

Abstract translation: 一种薄膜发光二极管芯片，具有具有第一发射表面和相对的第二发射表面的层堆叠，使得薄膜发光二极管芯片具有至少两个主发射方向。 在第一和第二主发射表面上提供了用于改善在层序中产生的光的外耦合的措施。 公开了制造薄膜发光二极管芯片的方法。

公开(公告)号：US09179507B2

公开(公告)日：2015-11-03

申请号：US13821551

申请日：2011-07-25

Applicant: Siegfried Herrmann ,  Norwin Von Malm ,  Lutz Höppel

Inventor： Siegfried Herrmann ,  Norwin Von Malm ,  Lutz Höppel

IPC: H05B37/00 ,  H05B33/08 ,  H01L41/04 ,  H01L41/107 ,  F21L13/06

CPC classification number: H05B33/08 ,  F21L13/06 ,  H01L41/044 ,  H01L41/107 ,  H05B33/0809

Abstract: What is specified is: a lighting apparatus, with a piezoelectric transformer (1), which has a mounting face (10), on which at least two output-side connection points (11) are arranged, and at least one substrateless light-emitting diode (2), which is designed to generate electromagnetic radiation, wherein the at least one substrateless light-emitting diode (2) is fitted at least indirectly to the mounting face (10) and fastened mechanically to the mounting face (10), and the at least one substrateless light-emitting diode (2) is electrically conductively connected to at least two of the output-side connection points (11).

Abstract translation: 具体实施方式是：具有压电变压器（1）的照明装置，其具有安装面（10），至少两个输出侧连接点（11）配置在所述安装面上，以及至少一个无基板发光 被设计成产生电磁辐射的二极管（2），其中所述至少一个无基板发光二极管（2）至少间接地装配到所述安装面（10）并机械地紧固到所述安装面（10），以及 所述至少一个无衬底发光二极管（2）与所述输出侧连接点（11）中的至少两个导电地连接。

公开(公告)号：US09142720B2

公开(公告)日：2015-09-22

申请号：US12525066

申请日：2008-01-22

Applicant: Siegfried Herrmann

Inventor： Siegfried Herrmann

IPC: H01L33/00 ,  H01L33/22 ,  B29C43/02 ,  B29C43/20 ,  B29L11/00 ,  H01L33/20

CPC classification number: H01L33/22 ,  B29C43/021 ,  B29C43/203 ,  B29L2011/0016 ,  H01L33/20 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A thin-film light-emitting diode chip with a layer stack having a first emission surface and an opposite second emission surface, so that the thin-film light-emitting diode chip has at least two main emission directions. Measures for improving the outcoupling of the light generated in the layer sequence are provided on both the first and the second main emission surface. A method is disclosed for manufacturing a thin-film light-emitting diode chip.

Abstract translation: 一种薄膜发光二极管芯片，具有具有第一发射表面和相对的第二发射表面的层堆叠，使得薄膜发光二极管芯片具有至少两个主发射方向。 在第一和第二主发射表面上提供了用于改善在层序中产生的光的外耦合的措施。 公开了制造薄膜发光二极管芯片的方法。

公开(公告)号：US09076941B2

公开(公告)日：2015-07-07

申请号：US14004442

申请日：2012-03-12

Applicant: Siegfried Herrmann ,  Stefan Illek

Inventor： Siegfried Herrmann ,  Stefan Illek

IPC: H01L33/60 ,  H01L33/62 ,  H01L33/58 ,  H01L33/44 ,  H01L23/00 ,  H01L33/00 ,  H01L33/22 ,  H01L33/38 ,  H01L33/46 ,  H01S5/02 ,  H01S5/022 ,  H01S5/323

CPC classification number: H01L33/60 ,  H01L24/19 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/382 ,  H01L33/44 ,  H01L33/46 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01S5/0201 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/32341 ,  H01L2924/00

Abstract: A method of producing at least one optoelectronic semiconductor chip includes providing at least one optoelectronic structure, including a growth support and a semiconductor layer sequence with an active region, the semiconductor layer sequence being deposited epitaxially on the growth support, providing a carrier, applying the at least one optoelectronic structure onto the carrier with its side remote from the growth support, coating the at least one optoelectronic structure with a protective material, the protective material covering the outer face, remote from the carrier, of the growth support and side faces of the growth support and of the semiconductor layer sequence, and detaching the growth support from the semiconductor layer sequence of the at least one optoelectronic structure.

Abstract translation: 一种制造至少一个光电子半导体芯片的方法包括：提供至少一个光电结构，包括生长支持体和具有有源区域的半导体层序列，半导体层序列外延地沉积在生长支持体上，提供载体， 至少一个光电结构到其载体上，其侧面远离生长载体，用保护材料涂覆至少一个光电结构，该保护材料覆盖远离载体的生长载体和侧面的外表面 生长支持物和半导体层序列，以及从至少一个光电子结构的半导体层序列分离生长支持物。

公开(公告)号：US08564007B2

公开(公告)日：2013-10-22

申请号：US12017539

申请日：2008-01-22

Applicant: Siegfried Herrmann

Inventor： Siegfried Herrmann

IPC: H01L33/00

CPC classification number: H01L33/648 ,  H01L33/56 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor component comprising an optically active layer and characterized by at least one cooling element and at least one coupling element. Also disclosed is an arrangement comprising a multiplicity of optically active layers and a method for producing a semiconductor component.

Abstract translation: 一种包括光学活性层并且由至少一个冷却元件和至少一个耦合元件表征的半导体元件。 还公开了包括多个光学活性层的布置和用于制造半导体部件的方法。

公开(公告)号：US20130229793A1

公开(公告)日：2013-09-05

申请号：US13821551

申请日：2011-07-25

Applicant: Siegfried Herrmann ,  Norwin Von Malm ,  Lutz Höppel

Inventor： Siegfried Herrmann ,  Norwin Von Malm ,  Lutz Höppel

IPC: H05B33/08 ,  F21L13/06

CPC classification number: H05B33/08 ,  F21L13/06 ,  H01L41/044 ,  H01L41/107 ,  H05B33/0809

Abstract: What is specified is: a lighting apparatus, with a piezoelectric transformer (1), which has a mounting face (10), on which at least two output-side connection points (11) are arranged, and at least one substrateless light-emitting diode (2), which is designed to generate electromagnetic radiation, wherein the at least one substrateless light-emitting diode (2) is fitted at least indirectly to the mounting face (10) and fastened mechanically to the mounting face (10), and the at least one substrateless light-emitting diode (2) is electrically conductively connected to at least two of the output-side connection points (11).

Abstract translation: 具体实施方式是：具有压电变压器（1）的照明装置，其具有安装面（10），至少两个输出侧连接点（11）配置在所述安装面上，以及至少一个无基板发光 被设计成产生电磁辐射的二极管（2），其中所述至少一个无基板发光二极管（2）至少间接地装配到所述安装面（10）并机械地紧固到所述安装面（10），以及 所述至少一个无衬底发光二极管（2）与所述输出侧连接点（11）中的至少两个导电地连接。

公开(公告)号：US08476667B2

公开(公告)日：2013-07-02

申请号：US12809682

申请日：2008-12-04

Applicant: Siegfried Herrmann

Inventor： Siegfried Herrmann

IPC: H01L33/38 ,  H01L33/64

CPC classification number: H01L33/44 ,  H01L33/46 ,  H01L33/62 ,  H01L33/64 ,  H01L33/641 ,  H01L33/647 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An optoelectronic component (10) comprising at least one metal body (15) and a layer sequence (17), which is applied on a base body (11) and which is embodied to emit an electromagnetic radiation and to which an insulation (12) is applied on at least one side area, wherein the at least one metal body (15) is applied to at least one region of the insulation (12) and is embodied in such a way that it is in thermally conductive contact with the base body (11).

Abstract translation: 一种光电子部件（10），包括至少一个金属体（15）和层序列（17），其被施加在基体（11）上，并被实施为发射电磁辐射，绝缘体（12） 施加在至少一个侧面区域上，其中所述至少一个金属体（15）被施加到所述绝缘体（12）的至少一个区域并被实施为使其与所述基体导热接触 （11）。

公开(公告)号：US08461601B2

公开(公告)日：2013-06-11

申请号：US12667199

申请日：2008-06-19

Applicant: Siegfried Herrmann

Inventor： Siegfried Herrmann

IPC: H01L29/18 ,  H01L33/00

CPC classification number: H01L33/62 ,  H01L25/0753 ,  H01L25/0756 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/385 ,  H01L2221/68363 ,  H01L2224/16 ,  H01L2924/01019 ,  H01L2924/01025 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00012

Abstract: A method for producing a plurality of optoelectronic devices is specified, comprising the following steps: providing a connection carrier assemblage having a plurality of device regions, wherein at least one electrical connection region is provided in each of the device regions, providing a semiconductor body carrier, on which a plurality of separate semiconductor bodies connected to the semiconductor body carrier are arranged, wherein the semiconductor bodies each have a semiconductor layer sequence having an active region, arranging the connection carrier assemblage and the semiconductor body carrier relative to one another in such a way that the semiconductor bodies face the device regions, mechanically connecting a plurality of semiconductor bodies to the connection carrier assemblage in a mounting region of a device region assigned to the respective semiconductor body, electrically conductively connecting the respective semiconductor body to the connection region of the device region assigned to the semiconductor body, and separating from the semiconductor body carrier the semiconductor bodies that are to be connected or are connected to the connection carrier assemblage, and dividing the connection carrier assemblage into a plurality of separate optoelectronic devices each having a connection carrier, which has the device region, and a semiconductor body arranged on the connection carrier and electrically conductively connected to the connection region.

Abstract translation: 规定了多个光电器件的制造方法，包括以下步骤：提供具有多个器件区域的连接载体组合，其中在每个器件区域中设置至少一个电连接区域，提供半导体本体载体 其上配置有连接到半导体主体载体的多个分离的半导体本体，其中半导体主体各自具有具有有源区的半导体层序列，将连接载体组合和半导体本体载体相对于彼此布置 半导体主体面对设备区域的方式，将多个半导体主体机械地连接到分配给各个半导体主体的设备区域的安装区域中的连接载体组件，将各个半导体主体连接到 设备寄存器 离子，并且与半导体本体载体分离将被连接或连接到连接载体组件的半导体本体，并将连接载体组合分成多个分离的光电子器件，每个光电子器件具有连接载体， 其具有器件区域，以及布置在连接载体上并导电连接到连接区域的半导体本体。