摘要:
A method of producing at least one optoelectronic semiconductor chip includes providing at least one optoelectronic structure, including a growth support and a semiconductor layer sequence with an active region, the semiconductor layer sequence being deposited epitaxially on the growth support, providing a carrier, applying the at least one optoelectronic structure onto the carrier with its side remote from the growth support, coating the at least one optoelectronic structure with a protective material, the protective material covering the outer face, remote from the carrier, of the growth support and side faces of the growth support and of the semiconductor layer sequence, and detaching the growth support from the semiconductor layer sequence of the at least one optoelectronic structure.
摘要:
A carrier (1) for an optoelectronic structure (2) is specified, wherein in places an electrically insulating passivation material (16) is arranged between an electrically conductive layer (14) of the carrier (1) and a carrier-side connecting means layer (15). Furthermore, an optoelectronic semiconductor chip comprising such a carrier and an optoelectronic structure (2) is specified, said structure being electrically conductively and mechanically connected to the carrier (1) by means of the carrier-side connecting means layer (15).
摘要:
A carrier (1) for an optoelectronic structure (2) is specified, wherein in places an electrically insulating passivation material (16) is arranged between an electrically conductive layer (14) of the carrier (1) and a carrier-side connecting means layer (15). Furthermore, an optoelectronic semiconductor chip comprising such a carrier and an optoelectronic structure (2) is specified, said structure being electrically conductively and mechanically connected to the carrier (1) by means of the carrier-side connecting means layer (15).
摘要:
A method of producing at least one optoelectronic semiconductor chip includes providing at least one optoelectronic structure, including a growth support and a semiconductor layer sequence with an active region, the semiconductor layer sequence being deposited epitaxially on the growth support, providing a carrier, applying the at least one optoelectronic structure onto the carrier with its side remote from the growth support, coating the at least one optoelectronic structure with a protective material, the protective material covering the outer face, remote from the carrier, of the growth support and side faces of the growth support and of the semiconductor layer sequence, and detaching the growth support from the semiconductor layer sequence of the at least one optoelectronic structure.
摘要:
A method of producing an optoelectronic semiconductor component includes arranging a semiconductor layer stack with a pn-junction on a substrate, lateral patterning of the semiconductor layer sack into a plurality of pairs of first semiconductor bodies and second semiconductor bodies spaced from one another in a lateral direction, detaching the substrate from the pairs of first semiconductor bodies and second semiconductor bodies, applying at least one pair of first semiconductor bodies and second semiconductor bodies to a connection carrier including electrical connection points and/or at least one conductor track, and electrically connecting the semiconductor bodies of a pair of first semiconductor bodies and second semiconductor bodies by the connection points and/or the at least one conductor track such that the pn-junction of the first semiconductor body connects in antiparallel to the pn-junction of the second semiconductor body.
摘要:
The invention relates to an optoelectronic semiconductor component, comprising a substrate-free optoelectronic semiconductor chip (1), which has a first main surface (1a) on an upper face and a second main surface (1b) on a lower face, and a metal carrier (2), which is arranged on the lower face of the optoelectronic semiconductor chip (1), wherein the metal carrier (2) protrudes over the optoelectronic semiconductor chip (1) in at least one lateral direction (1) and the metal carrier (2) is deposited on the second main surface (1b) of the optoelectronic semiconductor chip (1) using a galvanic or electroless plating method.
摘要:
A light-emitting diode arrangement comprising a plurality of semiconductor chips which are provided for emitting electromagnetic radiation from their front side and which are fixed by their rear side—opposite the front side—on a first main face of a common carrier body, wherein the semiconductor chips consist of a respective substrateless semiconductor layer stack and are fixed to the common carrier body without an auxiliary carrier, and to a method for producing such a light-emitting diode arrangement.
摘要:
An LED projector includes a plurality of light sources; and an image generator which includes an arrangement of pixels, each pixel including at least one light source; wherein the LEDs are stacked epi-LEDs which include layers arranged above one another for different colors, or each pixel includes an emission surface and at least two LEDs are arranged adjacent one another in the emission surface.
摘要:
An arrangement includes a semiconductor chip, which is designed to emit light during operation, and a cover layer, which lies across from the light-emitting surface of the semiconductor chip, such that light emitted from the semiconductor chip penetrates into the cover layer. In an area of the cover layer, overlapping with the chip, a light deflecting structure is provided by means of which light penetrating into the cover layer is deflected. The cover layer acts as an optical waveguide and is designed to emit the light such that it is distributed over the upper surface of cover layer.
摘要:
A method for producing a luminous device is specified. A number of light emitting diodes each have a radiation-transmissive carrier and at least two semiconductor bodies spatially separated from one another. Each semiconductor body is provided for generating electromagnetic radiation. The semiconductor bodies can be driven separately from one another and the semiconductor bodies are arranged at the top side of the radiation-transmissive carrier on the radiation-transmissive carrier. A chip assemblage is composed of CMOS chips each of which has at least two connection locations at its top side. At least one of the light emitting diodes is connected to one of the CMOS chips. The light emitting diode is arranged, at the top side of the radiation-transmissive carrier, at the top side of the CMOS chip and each semiconductor body of the light emitting diode is connected to a connection location of the CMOS chip.