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公开(公告)号：US11923326B2
公开(公告)日：2024-03-05
申请号：US17875291
申请日：2022-07-27
Inventor： Ching-Yu Chang , Ming-Da Cheng , Ming-Hui Weng
CPC classification number: H01L24/05 , C08G73/1078 , C08G73/1085 , H01L24/03 , H01L24/11 , H01L24/13 , H01L2224/02251 , H01L2224/0226 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/03616 , H01L2224/0401 , H01L2224/05111 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05176 , H01L2224/05181 , H01L2224/05184 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/11849 , H01L2224/13026 , H01L2224/13082 , H01L2224/13111 , H01L2224/13116 , H01L2224/13118 , H01L2224/1312 , H01L2224/13123 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13149 , H01L2224/13155 , H01L2224/1316 , H01L2224/13166 , H01L2224/13171 , H01L2224/13179 , H01L2224/1318 , H01L2224/13181 , H01L2224/13184 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/07025
Abstract: A method of manufacturing a bump structure includes forming a passivation layer over a substrate. A metal pad structure is formed over the substrate, wherein the passivation layer surrounds the metal pad structure. A polyimide layer including a polyimide is formed over the passivation layer and the metal pad structure. A metal bump is formed over the metal pad structure and the polyimide layer. The polyimide is a reaction product of a dianhydride and a diamine, wherein at least one of the dianhydride and the diamine comprises one selected from the group consisting of a cycloalkane, a fused ring, a bicycloalkane, a tricycloalkane, a bicycloalkene, a tricycloalkene, a spiroalkane, and a heterocyclic ring.
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公开(公告)号：US20230384679A1
公开(公告)日：2023-11-30
申请号：US18232717
申请日：2023-08-10
Inventor： An-Ren ZI , Chin-Hsiang Lin , Ching-Yu Chang
IPC: G03F7/11 , G03F7/004 , G03F7/038 , G03F7/039 , G03F7/16 , G03F7/20 , G03F7/32 , G03F7/38 , H01L21/027
CPC classification number: G03F7/11 , G03F7/0045 , G03F7/038 , G03F7/039 , G03F7/168 , G03F7/2002 , G03F7/32 , G03F7/38 , H01L21/0274
Abstract: A method of manufacturing a semiconductor device includes forming a photoresist under-layer including a photoresist under-layer composition over a semiconductor substrate, and forming a photoresist layer including a photoresist composition over the photoresist under-layer. The photoresist layer is selectively exposed to actinic radiation and the photoresist layer is developed to form a pattern in the photoresist layer. The photoresist under-layer composition includes a polymer having pendant acid-labile groups, a polymer having crosslinking groups or a polymer having pendant carboxylic acid groups, an acid generator, and a solvent. The photoresist composition includes a polymer, a photoactive compound, and a solvent.
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公开(公告)号：US11626293B2
公开(公告)日：2023-04-11
申请号：US17712982
申请日：2022-04-04
Inventor： Yen-Hao Chen , Wei-Han Lai , Ching-Yu Chang , Chin-Hsiang Lin
IPC: H01L21/00 , H01L21/321 , H01L21/02 , H01L21/027 , H01L21/3105
Abstract: A method of manufacturing a semiconductor device includes forming a first layer of a first planarizing material over a patterned surface of a substrate, forming a second layer of a second planarizing material over the first planarizing layer, crosslinking a portion of the first planarizing material and a portion of the second planarizing material, and removing a portion of the second planarizing material that is not crosslinked. In an embodiment, the method further includes forming a third layer of a third planarizing material over the second planarizing material after removing the portion of the second planarizing material that is not crosslinked. The third planarizing material can include a bottom anti-reflective coating or a spin-on carbon, and an acid or an acid generator. The first planarizing material can include a spin-on carbon, and an acid, a thermal acid generator or a photoacid generator.
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公开(公告)号：US20220365437A1
公开(公告)日：2022-11-17
申请号：US17815662
申请日：2022-07-28
Inventor： An-Ren Zi , Ching-Yu Chang
Abstract: A method of forming a masking element is provided. The method includes forming a photoresist material having a polymer backbone over a substrate, where the polymer backbone includes a linking group that links a first polymer segment to a second polymer segment, each of the first and the second polymer segments having an ultraviolet (UV) curable group. The method includes exposing the photoresist material under a first UV radiation to break the link between the first polymer segment and the second polymer segment. The method includes exposing the photoresist material under a second UV radiation different from the first UV radiation to form a patterned resist layer. And the method includes developing the patterned resist layer to form a masking element.
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公开(公告)号：US11460776B2
公开(公告)日：2022-10-04
申请号：US16671401
申请日：2019-11-01
Inventor： An-Ren Zi , Ching-Yu Chang
Abstract: A method of making a semiconductor device is provided. The method includes forming a photoresist material over a substrate, the photoresist material having a polymer that includes a backbone having a segment and a linking group, the segment including a carbon chain and an ultraviolet (UV) curable group, the UV curable group coupled to the carbon chain and to the linking group; performing a first exposure process that breaks the backbone of the polymer via decoupling the linking group from the connected UV curable group of each segment; performing a second exposure process to form a patterned photoresist layer; and developing the patterned photoresist layer.
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Patent Agency Ranking
公开(公告)号：US10978301B2
公开(公告)日：2021-04-13
申请号：US16118851
申请日：2018-08-31
Inventor： Ching-Yu Chang , Jung-Hau Shiu , Wei-Ren Wang , Shing-Chyang Pan , Tze-Liang Lee
IPC: H01L21/027 , H01L21/02 , H01L21/033 , H01L21/768 , H01L21/311 , H01L21/8234 , H01L29/66 , H01L21/3105
Abstract: Embodiments provide a patterning process. A photoresist layer is patterned. At least portions of the photoresist layer are converted from an organic material to an inorganic material by a deposition process of a metal oxide. All or some of the patterned photoresist layer may be converted to a carbon-metal-oxide. A metal oxide crust may be formed over the patterned photoresist layer. After conversion, the patterned photoresist layer is used as an etch mask to etch an underlying layer.
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公开(公告)号：US20200075319A1
公开(公告)日：2020-03-05
申请号：US16118851
申请日：2018-08-31
Inventor： Ching-Yu Chang , Jung-Hau Shiu , Wei-Ren Wang , Shing-Chyang Pan , Tze-Liang Lee
IPC: H01L21/027 , H01L21/311 , H01L21/02 , H01L21/033 , H01L21/768
Abstract: Embodiments provide a patterning process. A photoresist layer is patterned. At least portions of the photoresist layer are converted from an organic material to an inorganic material by a deposition process of a metal oxide. All or some of the patterned photoresist layer may be converted to a carbon-metal-oxide. A metal oxide crust may be formed over the patterned photoresist layer. After conversion, the patterned photoresist layer is used as an etch mask to etch an underlying layer.
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公开(公告)号：US10520836B2
公开(公告)日：2019-12-31
申请号：US16217095
申请日：2018-12-12
Inventor： Burn Jeng Lin , Ching-Yu Chang
Abstract: Immersion lithography system and method using a sealed wafer bottom are described. One embodiment is an immersion lithography apparatus comprising a lens assembly comprising an imaging lens and a wafer stage for retaining a wafer beneath the lens assembly, the wafer stage comprising a seal ring disposed on a seal ring frame along a top edge of the wafer retained on the wafer stage, the seal ring for sealing a gap between an edge of the wafer and the wafer stage. The embodiment further includes a fluid tank for retaining immersion fluid, the fluid tank situated with respect to the wafer stage for enabling full immersion of the wafer retained on the wafer stage in the immersion fluid and a cover disposed over at least a portion of the fluid tank for providing a temperature-controlled, fluid-rich environment within the fluid tank.
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公开(公告)号：US10466593B2
公开(公告)日：2019-11-05
申请号：US14811955
申请日：2015-07-29
Inventor： An-Ren Zi , Ching-Yu Chang
Abstract: A method of making a semiconductor device is provided. The method includes forming a photoresist material over a substrate, the photoresist material having a polymer that includes a backbone having a segment and a linking group, the segment including a carbon chain and an ultraviolet (UV) curable group, the UV curable group coupled to the carbon chain and to the linking group; performing a first exposure process that breaks the backbone of the polymer via decoupling the linking group from the connected UV curable group of each segment; performing a second exposure process to form a patterned photoresist layer; and developing the patterned photoresist layer.
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公开(公告)号：US10394126B2
公开(公告)日：2019-08-27
申请号：US14802756
申请日：2015-07-17
Inventor： Ya-Ling Cheng , Ching-Yu Chang , Chien-Wei Wang , Yen-Hao Chen
Abstract: One of the broader forms of the present disclosure relates to a method of making a semiconductor device. The method includes exposing a photoresist layer to a radiation source and applying a hardening agent to the photoresist layer. Therefore after applying the hardening agent a first portion of the photoresist layer has a higher glass transition temperature, higher mechanical strength, than a second portion of the photoresist layer.
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