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    Multi-pressure MEMS package
    45.
    发明授权
    Multi-pressure MEMS package 有权

    公开(公告)号：US09695039B1

    公开(公告)日：2017-07-04

    申请号：US15143762

    申请日：2016-05-02

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Yu-Chia Liu ,  Chia-Hua Chu ,  Chun-Wen Cheng ,  Kuei-Sung Chang ,  Jung-Huei Peng

    IPC: H01L21/00 ,  B81B7/04 ,  B81C1/00

    CPC classification number: B81B3/0051 ,  B81B7/02 ,  B81C2203/0118

    Abstract: The present disclosure relates to a microelectromechanical systems (MEMS) package having two MEMS devices with different pressures, and an associated method of formation. In some embodiments, the (MEMS) package includes a device substrate and a cap substrate bonded together. The device substrate includes a first trench and a second trench. A first MEMS device is disposed over the first trench and a second MEMS device is disposed over the second trench. A first stopper is raised from a first trench bottom surface of the first trench but below a top surface of the device substrate and a second stopper is raised from a second trench bottom surface of the second trench but below the top surface of the device substrate. A first depth of the first trench is greater than a second depth of the second trench.

    Multi-pressure MEMS package
    46.
    发明授权
    Multi-pressure MEMS package 有权
    多压MEMS封装

    公开(公告)号：US09567210B2

    公开(公告)日：2017-02-14

    申请号：US14629738

    申请日：2015-02-24

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chun-Wen Cheng ,  Chia-Hua Chu ,  Kuei-Sung Chang

    IPC: B81B7/02 ,  B81C1/00

    CPC classification number: B81B7/02 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2207/095 ,  B81C1/00293 ,  B81C2203/0109 ,  B81C2203/0118 ,  B81C2203/0145

    Abstract: The present disclosure relates to a microelectromechanical systems (MEMS) package having two MEMS devices with different pressures, and an associated method of formation. In some embodiments, the (MEMS) package includes a device substrate and a cap substrate bonded together. The bonded substrate comprises a first cavity corresponding to a first MEMS device having a first pressure and a second cavity corresponding to a second MEMS device having a different second pressure. The second cavity comprises a major volume and a vent hole connected by a lateral channel disposed between the device substrate and the cap substrate and the vent hole is hermetically sealed by a sealing structure.

    Abstract translation: 本公开涉及具有两个具有不同压力的MEMS器件的微机电系统（MEMS）封装以及相关联的形成方法。 在一些实施例中，（MEMS）封装包括结合在一起的器件衬底和帽衬底。 键合衬底包括对应于具有第一压力的第一MEMS器件的第一腔和对应于具有不同第二压力的第二MEMS器件的第二腔。 第二空腔包括主体积和通过设置在装置基板和盖基板之间的横向通道连接的通气孔，并且通气孔由密封结构气密密封。

    Micro-electro mechanical system (MEMS) device having a blocking layer formed between closed chamber and a dielectric layer of a CMOS substrate
    47.
    发明授权
    Micro-electro mechanical system (MEMS) device having a blocking layer formed between closed chamber and a dielectric layer of a CMOS substrate 有权
    微机电系统（MEMS）器件具有形成在封闭腔室和CMOS衬底介质层之间的阻挡层

    公开(公告)号：US09487391B2

    公开(公告)日：2016-11-08

    申请号：US14084161

    申请日：2013-11-19

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chun-Wen Cheng ,  Chia-Hua Chu

    IPC: B81B7/02 ,  B81C1/00

    CPC classification number: B81C1/00285 ,  B81B7/0038 ,  B81B7/02 ,  B81B2201/0264 ,  B81C1/00238 ,  B81C1/00293

    Abstract: Embodiments of mechanisms for forming a micro-electro mechanical system (MEMS) device are provided. The MEMS device includes a CMOS substrate, a cap substrate, and a MEMS substrate bonded between the CMOS substrate and the cap substrate. The MEMS substrate includes a first movable element and a second movable element. The MEMS device also includes a first closed chamber and a second closed chamber, which are between the MEMS substrate and the cap substrate. The first movable element is in the first closed chamber, and the second movable element is in the second closed chamber. A first pressure of the first closed chamber is higher than a second pressure of the second closed chamber.

    Abstract translation: 提供了用于形成微机电系统（MEMS）装置的机构的实施例。 MEMS器件包括CMOS衬底，帽衬底和结合在CMOS衬底和帽衬底之间的MEMS衬底。 MEMS基板包括第一可移动元件和第二可移动元件。 MEMS器件还包括位于MEMS衬底和盖衬底之间的第一封闭腔室和第二封闭腔室。 第一可移动元件位于第一封闭室中，第二可移动元件位于第二封闭室中。 第一封闭室的第一压力高于第二封闭室的第二压力。

    MEMS packaging techniques
    48.
    发明授权
    MEMS packaging techniques 有权
    MEMS封装技术

    公开(公告)号：US09290376B1

    公开(公告)日：2016-03-22

    申请号：US14737896

    申请日：2015-06-12

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chun-Wen Cheng ,  Chien-Hsuan Tai ,  Chia-Hua Chu

    IPC: H01L27/00 ,  B81B7/00 ,  B81C1/00 ,  H01L27/12 ,  H01L27/20 ,  H01L27/146

    CPC classification number: H01L27/12 ,  B81B2203/0127 ,  B81C1/00238 ,  H01L27/14692 ,  H01L27/20

    Abstract: In some embodiments, the present disclosure provides a MEMS package. The MEMS package includes a MEMS IC comprising a MEMS substrate, a dielectric layer disposed over the MEMS substrate, and a piezoelectric layer disposed over the dielectric layer. The dielectric layer includes a flexible diaphragm made of dielectric material, and the piezoelectric layer includes a piezoelectric opening over the flexible diaphragm. A CMOS IC includes a CMOS substrate and an electrical interconnect structure. The CMOS IC is bonded to the MEMS IC so the electrical interconnect structure is proximate to the piezoelectric layer and so the CMOS IC encloses a back cavity over the flexible diaphragm. A support layer is disposed between the electrical interconnect structure and the piezoelectric layer. The support layer has a support layer opening which is disposed at a position vertically aligned with the flexible diaphragm and which is a part of the back cavity.

    Abstract translation: 在一些实施例中，本公开提供了MEMS封装。 MEMS封装包括包括MEMS衬底的MEMS IC，设置在MEMS衬底上的电介质层和设置在电介质层上的压电层。 电介质层包括由电介质材料制成的柔性隔膜，压电层包括柔性隔膜上方的压电开口。 CMOS IC包括CMOS衬底和电互连结构。 CMOS IC结合到MEMS IC，使得电互连结构接近于压电层，因此CMOS IC在柔性隔膜上封闭后腔。 支撑层设置在电互连结构和压电层之间。 支撑层具有支撑层开口，该支撑层开口设置在与柔性隔膜垂直对准的位置，并且是后腔的一部分。

    CAPACITOR WITH PLANARIZED BONDING FOR CMOS-MEMS INTEGRATION
    49.
    发明申请
    CAPACITOR WITH PLANARIZED BONDING FOR CMOS-MEMS INTEGRATION 有权
    具有用于CMOS-MEMS集成的平面结合的电容器

    公开(公告)号：US20160031704A1

    公开(公告)日：2016-02-04

    申请号：US14445226

    申请日：2014-07-29

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Wei-Cheng Shen ,  Yi-Hsien Chang ,  Yi Heng Tsai ,  Tzu-Heng Wu ,  Chun-Ren Cheng ,  Chun-Wen Cheng

    IPC: B81B7/00 ,  B81C1/00

    CPC classification number: B81C1/00238

    Abstract: An integrated circuit (IC) structure is provided. The IC structure includes an IC substrate including active devices which are coupled together through a conductive interconnect structure arranged thereover. The conductive interconnect structure includes a series of horizontal conductive layers and dielectric regions arranged between neighboring horizontal conductive layers. The conductive interconnect structure includes an uppermost conductive horizontal region with a planar top surface region. A MEMS substrate is arranged over the IC substrate and includes a flexible or moveable structure that flexes or moves commensurate with a force applied to the flexible or moveable structure. The active devices of the IC substrate are arranged to establish analysis circuitry to facilitate electrical measurement of a capacitance between the uppermost conductive horizontal region and the flexible or moveable structure.

    Abstract translation: 提供集成电路（IC）结构。 IC结构包括IC基板，其包括通过布置在其上的导电互连结构耦合在一起的有源器件。 导电互连结构包括布置在相邻的水平导电层之间的一系列水平导电层和电介质区域。 导电互连结构包括具有平坦顶表面区域的最上面的导电水平区域。 MEMS基板布置在IC基板上方，并且包括柔性或可移动的结构，其以施加到柔性或可移动结构的力相应地弯曲或移动。 IC基板的有源器件被布置成建立分析电路，以便于电测量最上面的导电水平区域和柔性或可移动结构之间的电容。

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