公开(公告)号：US20200050098A1

公开(公告)日：2020-02-13

申请号：US16660300

申请日：2019-10-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chin-Hsiang Lin ,  Chien-Cheng Chen ,  Hsin-Chang Lee ,  Chia-Jen Chen ,  Pei-Cheng Hsu ,  Yih-Chen Su ,  Gaston Lee ,  Tran-Hui Shen

IPC: G03F1/24 ,  G03F1/38 ,  G03F1/22 ,  G03F1/54 ,  G03F7/20

Abstract: A lithography mask includes a substrate, a reflective structure disposed over a first side of the substrate, and a patterned absorber layer disposed over the reflective structure. The lithography mask includes a first region and a second region that surrounds the first region in a top view. The patterned absorber layer is located in the first region. A substantially non-reflective material is located in the second region. The lithography mask is formed by forming a reflective structure over a substrate, forming an absorber layer over the reflective structure, defining a first region of the lithography mask, and defining a second region of the lithography mask. The defining of the first region includes patterning the absorber layer. The second region is defined to surround the first region in a top view. The defining of the second region includes forming a substantially non-reflective material in the second region.

公开(公告)号：US10514597B2

公开(公告)日：2019-12-24

申请号：US15670183

申请日：2017-08-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Yue Lin ,  Hsin-Chang Lee ,  Chia-Jen Chen ,  Chih-Cheng Lin ,  Anthony Yen ,  Chin-Hsiang Lin

IPC: G03F1/24 ,  G03F1/26 ,  G03F1/42 ,  G03F1/48 ,  G03F1/54 ,  G03F1/50

Abstract: A lithography mask includes a substrate that contains a low thermal expansion material (LTEM). A reflective structure is disposed over a first side of the substrate. An absorber layer is disposed over the reflective structure. The absorber layer contains one or more first overlay marks. A conductive layer is disposed over a second side of the substrate, the second side being opposite the first side. The conductive layer contains portions of one or more second overlay marks. In some embodiments, the lithography mask includes an EUV lithography mask.

公开(公告)号：US12092952B2

公开(公告)日：2024-09-17

申请号：US17347322

申请日：2021-06-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kevin Tanady ,  Pei-Cheng Hsu ,  Ta-Cheng Lien ,  Tzu-Yi Wang ,  Hsin-Chang Lee

IPC: G03F1/24 ,  G03F1/54 ,  H01L21/033

CPC classification number: G03F1/24 ,  G03F1/54 ,  H01L21/0332 ,  H01L21/0337

Abstract: An extreme ultraviolet mask includes a substrate, a reflective multilayer stack over the substrate, a capping layer over the reflective multilayer stack, a patterned absorber layer over a first portion of the capping layer, and a magnetic layer over a second portion of the capping layer around the first portion.

公开(公告)号：US20240264520A1

公开(公告)日：2024-08-08

申请号：US18635209

申请日：2024-04-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Pei-Cheng Hsu ,  Chun-Fu Yang ,  Ta-Cheng Lien ,  Hsin-Chang Lee

IPC: G03F1/24 ,  G03F1/70 ,  G03F7/20

CPC classification number: G03F1/24 ,  G03F1/70 ,  G03F7/2004

Abstract: The present disclosure describes a method of patterning a semiconductor wafer using extreme ultraviolet lithography (EUVL). The method includes receiving an EUVL mask that includes a substrate having a low temperature expansion material, a reflective multilayer over the substrate, a capping layer over the reflective multilayer, and an absorber layer over the capping layer. The method further includes patterning the absorber layer to form a trench on the EUVL mask, wherein the trench has a first width above a target width. The method further includes treating the EUVL mask with oxygen plasma to reduce the trench to a second width, wherein the second width is below the target width. The method may also include treating the EUVL mask with nitrogen plasma to protect the capping layer, wherein the treating of the EUVL mask with the nitrogen plasma expands the trench to a third width at the target width.

公开(公告)号：US12001132B2

公开(公告)日：2024-06-04

申请号：US16534968

申请日：2019-08-07

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Pei-Cheng Hsu ,  Ta-Cheng Lien ,  Ping-Hsun Lin ,  Shih-Che Wang ,  Hsin-Chang Lee

IPC: G03F1/22 ,  G03F1/48 ,  G03F1/52 ,  G03F1/54 ,  H01L21/027

CPC classification number: G03F1/22 ,  G03F1/48 ,  G03F1/52 ,  G03F1/54 ,  H01L21/0274

Abstract: Fabricating a photomask includes forming a protection layer over a substrate. A plurality of multilayers of reflecting films are formed over the protection layer. A capping layer is formed over the plurality of multilayers. An absorption layer is formed over capping layer. A first photoresist layer is formed over portions of absorption layer. Portions of the first photoresist layer and absorption layer are patterned, forming first openings in absorption layer. The first openings expose portions of the capping layer. Remaining portions of first photoresist layer are removed and a second photoresist layer is formed over portions of absorption layer. The second photoresist layer covers at least the first openings. Portions of the absorption layer and capping layer and plurality of multilayer of reflecting films not covered by the second photoresist layer are patterned, forming second openings. The second openings expose portions of protection layer and second photoresist layer is removed.

公开(公告)号：US11988953B2

公开(公告)日：2024-05-21

申请号：US18151416

申请日：2023-01-06

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Pei-Cheng Hsu ,  Ta-Cheng Lien ,  Hsin-Chang Lee

IPC: G03F1/24 ,  G03F1/22

CPC classification number: G03F1/24 ,  G03F1/22

Abstract: A method includes forming a multi-layered reflective layer over a substrate; depositing a metal capping layer over the multi-layered reflective layer; depositing a first metal oxide layer over the metal capping layer; depositing a metal nitride layer over the first metal oxide layer; depositing a second metal oxide layer over the metal nitride layer; forming a plurality of features on the second metal oxide layer and the metal nitride layer.

公开(公告)号：US11906897B2

公开(公告)日：2024-02-20

申请号：US17350685

申请日：2021-06-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Pei-Cheng Hsu ,  Yih-Chen Su ,  Chi-Kuang Tsai ,  Ta-Cheng Lien ,  Tzu Yi Wang ,  Jong-Yuh Chang ,  Hsin-Chang Lee

IPC: G03F1/24 ,  G03F1/26 ,  G03F7/00 ,  H01L21/263 ,  G03F1/80 ,  G03F1/84

CPC classification number: G03F1/24 ,  G03F1/26 ,  G03F1/80 ,  G03F1/84 ,  G03F7/70433 ,  G03F7/70466 ,  H01L21/2633

Abstract: A reflective mask includes a reflective multilayer over a substrate, a capping layer over the reflective multilayer, an absorber layer over the capping layer and including a top surface, and a protection layer directly on the top surface of the absorber layer. The absorber layer is formed of a first material and the protection layer is formed of a second material that is less easily to be oxidized than the first material.

公开(公告)号：US11852966B2

公开(公告)日：2023-12-26

申请号：US17340991

申请日：2021-06-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chin-Hsiang Lin ,  Chien-Cheng Chen ,  Hsin-Chang Lee ,  Chia-Jen Chen ,  Pei-Cheng Hsu ,  Yih-Chen Su ,  Gaston Lee ,  Tran-Hui Shen

IPC: G03F1/24 ,  G03F1/54 ,  G03F7/20 ,  G03F1/38 ,  G03F1/22

CPC classification number: G03F1/24 ,  G03F1/38 ,  G03F1/54 ,  G03F7/2004 ,  G03F1/22

Abstract: A lithography mask includes a substrate, a reflective structure disposed over a first side of the substrate, and a patterned absorber layer disposed over the reflective structure. The lithography mask includes a first region and a second region that surrounds the first region in a top view. The patterned absorber layer is located in the first region. A substantially non-reflective material is located in the second region. The lithography mask is formed by forming a reflective structure over a substrate, forming an absorber layer over the reflective structure, defining a first region of the lithography mask, and defining a second region of the lithography mask. The defining of the first region includes patterning the absorber layer. The second region is defined to surround the first region in a top view. The defining of the second region includes forming a substantially non-reflective material in the second region.

公开(公告)号：US20230408906A1

公开(公告)日：2023-12-21

申请号：US18365760

申请日：2023-08-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Pei-Cheng Hsu ,  Ping-Hsun Lin ,  Ta-Cheng Lien ,  Hsin-Chang Lee

IPC: G03F1/62 ,  G03F7/00 ,  C23C16/455

CPC classification number: G03F1/62 ,  G03F7/70033 ,  C23C16/45525 ,  G03F7/70983

Abstract: Coated nanotubes and bundles of nanotubes are formed into membranes useful in optical assemblies in EUV photolithography systems. These optical assemblies are useful in methods for patterning materials on a semiconductor substrate. Such methods involve generating, in a UV lithography system, UV radiation. The UV radiation is passed through a coating layer of the optical assembly, e.g., a pellicle assembly. The UV radiation that has passed through the coating layer is passed through a matrix of individual nanotubes or matrix of nanotube bundles. UV radiation that passes through the matrix of individual nanotubes or matrix of nanotube bundles is reflected from a mask and received at a semiconductor substrate.

公开(公告)号：US11822230B2

公开(公告)日：2023-11-21

申请号：US17162997

申请日：2021-01-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wen-Yao Wei ,  Chi-Lun Lu ,  Hsin-Chang Lee

IPC: G03F1/64

CPC classification number: G03F1/64

Abstract: In a method of de-mounting a pellicle from a photo mask, the photo mask with the pellicle is placed on a pellicle holder. The pellicle is attached to the photo mask by a plurality of micro structures. The plurality of micro structures are detached from the photo mask by applying a force or energy to the plurality of micro structures before or without applying a pulling force to separate the pellicle from the photo mask. The pellicle is de-mounted from the photo mask. In one or more of the foregoing and following embodiments, the plurality of micro structures are made of an elastomer.