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公开(公告)号：US20240361708A1
公开(公告)日：2024-10-31
申请号：US18766165
申请日：2024-07-08
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chieh HSIEH , Tai-Yu CHEN , Cho-Ying LIN , Heng-Hsin LIU , Li-Jui CHEN , Shang-Chieh CHIEN
CPC classification number: G03F7/70925 , G02B17/0663 , G03F7/70033 , G03F7/70491 , G03F7/70808 , G03F7/70916 , H05G2/008
Abstract: A lithography system is provided capable of deterring contaminants, such as tin debris from entering into the scanner. The lithography system in accordance with various embodiments of the present disclosure includes a processor, an extreme ultraviolet light source, a scanner, and a hollow connection member. The light source includes a droplet generator for generating a droplet, a collector for reflecting extreme ultraviolet light into an intermediate focus point, and a light generator for generating pre-pulse light and main pulse light. The droplet generates the extreme ultraviolet light in response to the droplet being illuminated with the pre-pulse light and the main pulse light. The scanner includes a wafer stage. The hollow connection member includes an inlet that is in fluid communication with an exhaust pump. The hollow connection member provides a hollow space in which the intermediate focus point is disposed. The hollow connection member is disposed between the extreme ultraviolet light source and the scanner.
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公开(公告)号：US20230400763A1
公开(公告)日：2023-12-14
申请号：US18446400
申请日：2023-08-08
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Cheng Hung TSAI , Sheng-Kang YU , Shang-Chieh CHIEN , Heng-Hsin LIU , Li-Jui CHEN
CPC classification number: G03F7/0035 , G03F7/22 , G03F7/36 , G03F7/2004 , G03F7/2026
Abstract: A method includes: depositing a mask layer over a substrate; directing first radiation reflected from a central collector section of a sectional collector of a lithography system toward the mask layer according to a pattern; directing second radiation reflected from a peripheral collector section of the sectional collector toward the mask layer according to the pattern, wherein the peripheral collector section is vertically separated from the central collector section by a gap; forming openings in the mask layer by removing first regions of the mask layer exposed to the first radiation and second regions of the mask layer exposed to the second radiation; and removing material of a layer underlying the mask layer exposed by the openings.
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公开(公告)号：US20230375938A1
公开(公告)日：2023-11-23
申请号：US18366092
申请日：2023-08-07
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Cheng-Hao LAI , Ming-Hsun TSAI , Hsin-Feng CHEN , Wei-Shin CHENG , Yu-Kuang SUN , Cheng-Hsuan WU , Yu-Fa LO , Shih-Yu TU , Jou-Hsuan LU , Shang-Chieh CHIEN , Li-Jui CHEN , Heng-Hsin LIU
IPC: G03F7/00
CPC classification number: G03F7/70033
Abstract: Impurities in a liquefied solid fuel utilized in a droplet generator of an extreme ultraviolet photolithography system are removed from vessels containing the liquefied solid fuel. Removal of the impurities increases the stability and predictability of droplet formation which positively impacts wafer yield and droplet generator lifetime.
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公开(公告)号：US20230065403A1
公开(公告)日：2023-03-02
申请号：US17462563
申请日：2021-08-31
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Tai-Yu CHEN , Cho-Ying LIN , Sagar Deepak KHIVSARA , Hsiang CHEN , Chieh HSIEH , Sheng-Kang YU , Shang-Chieh CHIEN , Kai Tak LAM , Li-Jui CHEN , Heng-Hsin LIU , Zhiqiang WU
Abstract: A light source is provided capable of maintaining the temperature of a collector surface at or below a predetermined temperature. The light source in accordance with various embodiments of the present disclosure includes a processor, a droplet generator for generating a droplet to create extreme ultraviolet light, a collector for reflecting the extreme ultraviolet light into an intermediate focus point, a light generator for generating pre-pulse light and main pulse light, and a thermal image capture device for capturing a thermal image from a reflective surface of the collector.
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公开(公告)号：US20220338334A1
公开(公告)日：2022-10-20
申请号：US17233220
申请日：2021-04-16
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yu-Kuang SUN , Cheng-Hao LAI , Yu-Huan CHEN , Wei-Shin CHENG , Ming-Hsun TSAI , Hsin-Feng CHEN , Chiao-Hua CHENG , Cheng-Hsuan WU , Yu-Fa LO , Shang-Chieh CHIEN , Li-Jui CHEN , Heng-Hsin LIU
Abstract: An extreme ultraviolet (EUV) photolithography system generates EUV light by irradiating droplets with a laser. The system includes a droplet generator with a nozzle and a piezoelectric structure coupled to the nozzle. The generator outputs groups of droplets. A control system applies a voltage waveform to the piezoelectric structure while the nozzle outputs the group of droplets. The waveform causes the droplets of the group to have a spread of velocities that results in the droplets coalescing into a single droplet prior to being irradiated by the laser.
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Patent Agency Ranking
公开(公告)号：US20220334495A1
公开(公告)日：2022-10-20
申请号：US17494558
申请日：2021-10-05
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Cheng-Hao LAI , Ming-Hsun TSAI , Hsin-Feng CHEN , Wei-Shin CHENG , Yu-Kuang SUN , Cheng-Hsuan WU , Yu-Fa LO , Shih-Yu TU , Jou-Hsuan LU , Shang-Chieh CHIEN , Li-Jui CHEN , Heng-Hsin LIU
IPC: G03F7/20
Abstract: Impurities in a liquefied solid fuel utilized in a droplet generator of an extreme ultraviolet photolithography system are removed from vessels containing the liquefied solid fuel. Removal of the impurities increases the stability and predictability of droplet formation which positively impacts wafer yield and droplet generator lifetime.
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47.发明申请公开(公告)号：US20220229371A1
公开(公告)日：2022-07-21
申请号：US17150685
申请日：2021-01-15
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Tai-Yu CHEN , Heng-Hsin LIU , Li-Jui CHEN , Shang-Chieh CHIEN
Abstract: A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become a plasma and emit extreme ultraviolet radiation. An array of sensors sense the extreme ultraviolet radiation and charged particles emitted by the droplets. A control system analyses sensor signals from the sensors and adjusts plasma generation parameters responsive to the sensor signals.
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48.发明申请公开(公告)号：US20220011675A1
公开(公告)日：2022-01-13
申请号：US16926489
申请日：2020-07-10
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Ting-Ya CHENG , Han-Lung CHANG , Shi-Han SHANN , Li-Jui CHEN , Yen-Shuo SU
Abstract: A method of controlling an extreme ultraviolet (EUV) lithography system is disclosed. The method includes irradiating a target droplet with EUV radiation, detecting EUV radiation reflected by the target droplet, determining aberration of the detected EUV radiation, determining a Zernike polynomial corresponding to the aberration, and performing a corrective action to reduce a shift in Zernike coefficients of the Zernike polynomial.
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49.发明申请公开(公告)号：US20210247702A1
公开(公告)日：2021-08-12
申请号：US16787947
申请日：2020-02-11
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Ssu-Yu CHEN , Shang-Chieh CHIEN , Li-Jui CHEN
Abstract: An extreme ultraviolet (EUV) light source and a method for patterning a resist layer on a substrate using the EUV light source are disclosed. For example, the EUV light source includes a volume to collect liquid tin debris remaining after a plasma generation process, a cover coupled to the volume, wherein the cover comprises at least one opening to allow the liquid tin debris to fall through the at least one opening of the cover and into the volume, and a heater coupled to the cover, wherein the heater is to melt solid tin that forms from cooling of the liquid tin debris on a surface around the at least one opening of the cover.
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公开(公告)号：US20210227676A1
公开(公告)日：2021-07-22
申请号：US17135768
申请日：2020-12-28
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Wei-Shin CHENG , Han-Lung CHANG , Li-Jui CHEN , Po-Chung CHENG , Hsiao-Lun CHANG
Abstract: A metal reuse system for an extreme ultra violet (EUV) radiation source apparatus includes a first metal collector for collecting metal from vanes of the EUV radiation source apparatus, a first metal storage coupled to the first metal collector via a first conduit, a metal droplet generator coupled to the first metal storage via a second conduit, and a first metal filtration device disposed on either one of the first conduit and the second conduit.
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