公开(公告)号：US10419511B1

公开(公告)日：2019-09-17

申请号：US15285266

申请日：2016-10-04

申请人： Zheng Yuan

发明人： Zheng Yuan

IPC分类号： H04L29/06 ,  H04N21/8358 ,  H04N1/32

摘要： The unique watermark system comprising: identifying a presenter attendee, a first recipient attendee, and a second recipient attendee through a video conferencing session; detecting the presenter attendee sharing the visual content with the first recipient attendee and the second recipient attendee; selecting a first unique watermark and a second unique watermark from the plurality of unique watermarks and assigning them to a first recipient attendee and a second recipient attendee, respectively; inserting the first unique watermark into the visual content for the first recipient attendee and the second unique watermark into the visual content for the second recipient attendee; and transmitting the visual content with the first unique watermark to the first recipient attendee and the visual content with the second unique watermark to the second recipient attendee, wherein the method is performed by one or more special-purpose computing devices for hosting the video conferencing session.

公开(公告)号：US20130004681A1

公开(公告)日：2013-01-03

申请号：US13174690

申请日：2011-06-30

申请人： Alan Tso ,  Jeonghoon Oh ,  Yi Zheng ,  Tom K. Cho ,  Zheng Yuan ,  Lin Zhang ,  Qunhua Wang ,  Robin L. Tiner

发明人： Alan Tso ,  Jeonghoon Oh ,  Yi Zheng ,  Tom K. Cho ,  Zheng Yuan ,  Lin Zhang ,  Qunhua Wang ,  Robin L. Tiner

IPC分类号： C23C16/50 ,  F24H9/12

CPC分类号： C23C16/45565

摘要： Embodiments of the present invention provide a plasma processing chamber having a mini blocker plate for delivering processing gas to a processing chamber and methods to use the mini blocker plate to improve uniformity. The blocker plate assembly comprising a mini blocker plate having a plurality of through holes, and two or more standoff spacers configured to position the mini blocker plate at a distance away from a blocker plate.

摘要翻译： 本发明的实施例提供了一种等离子体处理室，其具有用于将处理气体输送到处理室的微型封隔板以及使用迷你封隔板来提高均匀性的方法。 阻挡板组件包括具有多个通孔的迷你阻塞板，以及两个或更多个支架间隔件，其构造成将迷你阻挡板定位成远离阻挡板。

公开(公告)号：US08250141B2

公开(公告)日：2012-08-21

申请号：US12168181

申请日：2008-07-07

申请人： Sihai Xiao ,  Zheng Yuan

发明人： Sihai Xiao ,  Zheng Yuan

IPC分类号： G06F15/16

CPC分类号： H04L67/24 ,  G06Q10/10 ,  H04L65/4015 ,  H04L67/14

摘要： In one embodiment, a determination is made that a specified event of a collaborative computing session has occurred. In response to the specified event, a real-time electronic notification is transmitted to a particular set of one or more attendees of the session that the event has occurred, the notification illustratively transmitted via a communication channel other than the session.

摘要翻译： 在一个实施例中，确定协作计算会话的指定事件已经发生。 响应于指定的事件，实时电子通知被发送到事件已经发生的会话的一个或多个参与者的特定集合，该通知经由会话以外的通信信道而被说明性地发送。

公开(公告)号：US20110202599A1

公开(公告)日：2011-08-18

申请号：US13094611

申请日：2011-04-26

申请人： Zheng Yuan ,  David Knight ,  Rohit Deep

发明人： Zheng Yuan ,  David Knight ,  Rohit Deep

IPC分类号： G06F15/16

CPC分类号： H04L67/22 ,  H04L67/14 ,  H04L67/148

摘要： In one embodiment, a collaboration session is maintained among a plurality of participant devices, at least one participant device operating as a presenter device that shares content during the collaboration session. Content shared during the collaboration session is recorded. A request is detected during the collaboration session from a particular participant device of the plurality of participant devices to view at least a portion of the recorded content. In response to the request during the collaboration from the particular participant device to view the at least a portion of the recorded content, the at least a portion of the recorded content is played back while the collaboration session is still ongoing, wherein the particular participant device remains an active participant in the ongoing collaboration session during playback of the at least a portion of the recorded content. Eventually, playback of the at least a portion of the recorded content is ceased.

摘要翻译： 在一个实施例中，在多个参与者设备之间维护协作会话，至少一个参与者设备作为在协作会话期间共享内容的演示者设备。 记录在协作会话期间共享的内容。 在来自多个参与者设备的特定参与者设备的协作会话期间检测到请求以查看所记录的内容的至少一部分。 响应于在来自特定参与者设备的协作期间查看所记录的内容的至少一部分的请求，在协作会话仍在进行的同时回放记录内容的至少一部分，其中特定参与者设备 在播放记录的内容的至少一部分期间，仍然是正在进行的协作会话的积极参与者。 最终，记录的内容的至少一部分的播放被停止。

公开(公告)号：US20100131868A1

公开(公告)日：2010-05-27

申请号：US12323903

申请日：2008-11-26

申请人： Jitendra P. Chawla ,  Zheng Yuan

发明人： Jitendra P. Chawla ,  Zheng Yuan

IPC分类号： G06F3/048

CPC分类号： G06F3/0481 ,  G06F3/044 ,  H04L12/1822

摘要： In one embodiment, an application sharing session may be established between a presenter device and one or more viewer devices, and at least one application window may be generated on the presenter device that is to be shared with the one or more viewer devices. At the presenter device, a determination may be made regarding which one or more predefined areas of the application window are to be limitedly shared. Accordingly, the application window may be shared with the one or more viewer devices, while limiting sharing of the one or more predefined areas of the application window.

摘要翻译： 在一个实施例中，可以在演示器设备和一个或多个观看者设备之间建立应用共享会话，并且可以在要与一个或多个观看者设备共享的演示设备上生成至少一个应用窗口。 在演示装置中，可以确定应用窗口的哪一个或多个预定义区域将被有限地共享。 因此，应用程序窗口可以与一个或多个查看器设备共享，同时限制应用程序窗口的一个或多个预定义区域的共享。

公开(公告)号：US07528051B2

公开(公告)日：2009-05-05

申请号：US10846734

申请日：2004-05-14

申请人： Reza Arghavani ,  Zheng Yuan ,  Ellie Y. Yieh ,  Shankar Venkataraman ,  Nitin K. Ingle

发明人： Reza Arghavani ,  Zheng Yuan ,  Ellie Y. Yieh ,  Shankar Venkataraman ,  Nitin K. Ingle

IPC分类号： H01L21/76

CPC分类号： H01L29/6656 ,  H01L21/823807 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7846

摘要： A method of fabricating a semiconductor device, where the method includes forming a transistor on a substrate, where the transistor includes a channel region configured to conduct charge between a source region and a drain region, forming a trench adjacent to the transistor, depositing a material on the substrate and within the trench, and annealing the material, where the material is tensile following the annealing and creates a tensile stress in the channel region. Also, a method of forming a trench isolation in a semiconductor device, where the method includes forming a trench in a substrate, forming a material within the trench at a lower deposition rate, forming the material on the substrate at a higher deposition rate after the depositing of the material within the trench, and annealing the material, where after the annealing the material in the trench is tensile.

摘要翻译： 一种制造半导体器件的方法，其中所述方法包括在衬底上形成晶体管，其中所述晶体管包括被配置为在源极区域和漏极区域之间传导电荷的沟道区域，形成与所述晶体管相邻的沟槽， 在衬底上和沟槽内，并对材料进行退火，其中材料在退火之后是拉伸的，并且在沟道区域中产生拉伸应力。 另外，在半导体器件中形成沟槽隔离的方法，其中所述方法包括在衬底中形成沟槽，以较低的沉积速率在沟槽内形成材料，在衬底上以更高的沉积速率在衬底上形成材料 在沟槽内沉积材料并退火材料，其中在退火之后，沟槽中的材料是拉伸的。

公开(公告)号：US07459405B2

公开(公告)日：2008-12-02

申请号：US11493211

申请日：2006-07-25

申请人： Nitin K. Ingle ,  Xinyua Xia ,  Zheng Yuan

发明人： Nitin K. Ingle ,  Xinyua Xia ,  Zheng Yuan

IPC分类号： H01L21/469 ,  H01L21/31 ,  H01L21/26

CPC分类号： C23C16/45523 ,  C23C16/045 ,  C23C16/401 ,  C23C16/402 ,  C23C16/45512 ,  C23C16/52 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76801 ,  Y10S438/958

摘要： Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-filling properties. During a pre-deposition gas flow stabilization phase and an initial deposition stage, a relatively low ratio of silicon-containing gas:oxidant deposition gas is flowed, resulting in formation of highly conformal silicon oxide at relatively slow rates. Over the course of the deposition process step, the ratio of silicon-containing gas:oxidant gas is increased, resulting in formation of less-conformal oxide material at relatively rapid rates during later stages of the deposition process step.

摘要翻译： 本发明的实施例提供了与氧化硅的化学气相沉积相关的方法，装置和装置。 在一个实施例中，使用单步沉积工艺来有效地形成表现出高共形性和良好间隙填充性能的氧化硅层。 在预沉积气体流动稳定阶段和初始沉积阶段期间，含硅气体：氧化剂沉积气体的比例相对较低，从而以相对较慢的速率形成高度保形的氧化硅。 在沉积工艺步骤的过程中，含硅气体：氧化剂气体的比率增加，导致在沉积工艺步骤的后续阶段以相对较快的速率形成较小保形的氧化物材料。

公开(公告)号：US07456116B2

公开(公告)日：2008-11-25

申请号：US11018381

申请日：2004-12-20

申请人： Nitin K. Ingle ,  Shan Wong ,  Xinyun Xia ,  Vikash Banthia ,  Won B. Bang ,  Yen-Kun V. Wang ,  Zheng Yuan

发明人： Nitin K. Ingle ,  Shan Wong ,  Xinyun Xia ,  Vikash Banthia ,  Won B. Bang ,  Yen-Kun V. Wang ,  Zheng Yuan

IPC分类号： H01L21/31

CPC分类号： C23C16/45512 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/52

摘要： A method to form a silicon oxide layer, where the method includes the step of providing a continuous flow of a silicon-containing precursor to a chamber housing a substrate, where the silicon-containing precursor is selected from TMOS, TEOS, OMTS, OMCTS, and TOMCATS. The method may also include the steps of providing a flow of an oxidizing precursor to the chamber, and causing a reaction between the silicon-containing precursor and the oxidizing precursor to form a silicon oxide layer. The method may further include varying over time a ratio of the silicon-containing precursor:oxidizing precursor flowed into the chamber to alter a rate of deposition of the silicon oxide on the substrate.

摘要翻译： 一种形成氧化硅层的方法，其中该方法包括提供含硅前体连续流入容纳衬底的室的步骤，其中含硅前驱体选自TMOS，TEOS，OMTS，OMCTS， 和TOMCATS。 该方法还可以包括以下步骤：向室提供氧化前体流，并使含硅前体和氧化前体之间的反应形成氧化硅层。 该方法可以进一步包括随着时间的推移改变硅含量的前体：氧化前体流入室中以改变氧化硅在衬底上的沉积速率。

公开(公告)号：US07431967B2

公开(公告)日：2008-10-07

申请号：US10757770

申请日：2004-01-14

申请人： Zheng Yuan ,  Shankar Venkataraman ,  Cary Ching ,  Shang Wong ,  Kevin Mikio Mukai ,  Nitin K. Ingle

发明人： Zheng Yuan ,  Shankar Venkataraman ,  Cary Ching ,  Shang Wong ,  Kevin Mikio Mukai ,  Nitin K. Ingle

IPC分类号： C23C16/00 ,  C23C14/00 ,  C23C16/22 ,  H01L21/302 ,  H01L21/461

CPC分类号： C23C16/401 ,  C23C16/45512 ,  C23C16/45523 ,  C23C16/52 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31608 ,  H01L21/31625 ,  H01L21/76837

摘要： A method of filling a gap on a substrate includes providing flows of silicon-containing processing gas oxidizing processing gas, and phosphorous-containing processing gas to a chamber housing the substrate and depositing a first portion of a P-doped silicon oxide film as a substantially conformal layer in the gap by causing a reaction among the processing gases and varying over time a ratio of the gases. The temperature of the substrate is maintained below about 500° C. throughout deposition of the conformal layer. The method also includes depositing a second portion of the P-doped silicon oxide film as a bulk layer by maintaining the ratio of the gases substantially constant throughout deposition of the bulk layer. The temperature of the substrate is maintained below about 500° C. throughout deposition of the bulk layer.

摘要翻译： 在衬底上填充间隙的方法包括提供含硅处理气体氧化处理气体和含磷处理气体的流向容纳衬底的腔室，并将P掺杂氧化硅膜的第一部分基本上 通过引起处理气体之间的反应并随时间改变气体的比例，间隙中的保形层。 在保形层的沉积过程中，基板的温度保持在约500℃以下。 该方法还包括通过在本体层的整个沉积期间保持气体的比率基本恒定来沉积P掺杂氧化硅膜的第二部分作为本体层。 在本体层的整个沉积过程中，衬底的温度保持在约500℃以下。

公开(公告)号：US20070288569A1

公开(公告)日：2007-12-13

申请号：US11753169

申请日：2007-05-24

申请人： Zheng Yuan ,  David Knight ,  Rohit Deep

发明人： Zheng Yuan ,  David Knight ,  Rohit Deep

IPC分类号： G06F15/16

CPC分类号： H04L67/22 ,  H04L67/14 ,  H04L67/148

摘要： In one embodiment, the systems and methods attend a collaboration session; detect content shared during the collaboration session; automatically record the content and a time stamp corresponding to the content; and play at least a portion of the content during the collaboration session.

摘要翻译： 在一个实施例中，系统和方法参与协作会话; 检测协作会话共享的内容; 自动记录与内容对应的内容和时间戳; 并在协作会话期间播放内容的至少一部分。