公开(公告)号：US20130004681A1

公开(公告)日：2013-01-03

申请号：US13174690

申请日：2011-06-30

申请人： Alan Tso ,  Jeonghoon Oh ,  Yi Zheng ,  Tom K. Cho ,  Zheng Yuan ,  Lin Zhang ,  Qunhua Wang ,  Robin L. Tiner

发明人： Alan Tso ,  Jeonghoon Oh ,  Yi Zheng ,  Tom K. Cho ,  Zheng Yuan ,  Lin Zhang ,  Qunhua Wang ,  Robin L. Tiner

IPC分类号： C23C16/50 ,  F24H9/12

CPC分类号： C23C16/45565

摘要： Embodiments of the present invention provide a plasma processing chamber having a mini blocker plate for delivering processing gas to a processing chamber and methods to use the mini blocker plate to improve uniformity. The blocker plate assembly comprising a mini blocker plate having a plurality of through holes, and two or more standoff spacers configured to position the mini blocker plate at a distance away from a blocker plate.

摘要翻译： 本发明的实施例提供了一种等离子体处理室，其具有用于将处理气体输送到处理室的微型封隔板以及使用迷你封隔板来提高均匀性的方法。 阻挡板组件包括具有多个通孔的迷你阻塞板，以及两个或更多个支架间隔件，其构造成将迷你阻挡板定位成远离阻挡板。

公开(公告)号：US10676817B2

公开(公告)日：2020-06-09

申请号：US13569064

申请日：2012-08-07

申请人： Qunhua Wang ,  Soo Young Choi ,  Robin L. Tiner ,  John M. White ,  Gaku Furuta ,  Beom Soo Park

发明人： Qunhua Wang ,  Soo Young Choi ,  Robin L. Tiner ,  John M. White ,  Gaku Furuta ,  Beom Soo Park

IPC分类号： C23C16/04 ,  C23C16/458 ,  C23C14/04

摘要： Device for processing a substrate are described herein. An apparatus for controlling deposition on a substrate can include a chamber comprising a shadow frame support, a substrate support comprising a substrate supporting surface, a shadow frame with a shadow frame body including a first support surface, a second support surface opposite the first surface, and a detachable lip connected with the shadow frame body. The detachable lip can include a support connection, a first lip surface facing the substrate, a second lip surface opposite the first lip surface, a first edge positioned over the first support surface, and a second edge opposite the first edge to contact the substrate.

公开(公告)号：US20120027918A1

公开(公告)日：2012-02-02

申请号：US13163241

申请日：2011-06-17

申请人： Robin L. Tiner ,  Soo Young Choi ,  Qunhua Wang ,  Jrjyan Jerry Chen

发明人： Robin L. Tiner ,  Soo Young Choi ,  Qunhua Wang ,  Jrjyan Jerry Chen

IPC分类号： C23C16/455 ,  B05D5/12

CPC分类号： B05B1/005 ,  C23C16/45565 ,  H01J37/3244

摘要： Embodiments of the present invention generally provide apparatus and methods for supporting a gas distribution showerhead in a processing chamber. In one embodiment, a gas distribution showerhead for a vacuum chamber is provided. The gas distribution showerhead comprises a body having a first side and a second side opposite the first side, and a plurality of gas passages formed through the body, the gas passages comprising a first bore formed in the first side that is fluidly coupled to a second bore formed in the second side by a restricting orifice, and a suspension feature formed in the first bore of at least one of the gas passages.

摘要翻译： 本发明的实施例通常提供用于在处理室中支撑气体分配喷头的装置和方法。 在一个实施例中，提供了一种用于真空室的气体分配喷头。 所述气体分配喷头包括具有第一侧和与所述第一侧相对的第二侧的主体和穿过所述主体形成的多个气体通道，所述气体通道包括形成在所述第一侧中的第一孔，所述第一孔流体地联接到第二侧 通过限制孔形成在第二侧中的孔，以及形成在至少一个气体通道的第一孔中的悬挂特征。

公开(公告)号：US08083853B2

公开(公告)日：2011-12-27

申请号：US10889683

申请日：2004-07-12

申请人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

发明人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

IPC分类号： C23C16/00 ,  C23C16/455 ,  H01L21/3065

CPC分类号： H01J37/3244 ,  C23C16/345 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32596 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3325 ,  Y10T29/49885 ,  Y10T29/49996

摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.

摘要翻译： 提供了用于在处理室中分配气体的气体扩散板的实施例。 气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。 气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。 延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性 。 从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。 扩散板的弯曲可以通过热处理或真空工艺来实现。 从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。 具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

公开(公告)号：US20130263782A1

公开(公告)日：2013-10-10

申请号：US13569064

申请日：2012-08-07

申请人： QUNHUA WANG ,  Soo Young Choi ,  Robin L. Tiner ,  John M. White ,  Gaku Furuta ,  Beom Soo Park

发明人： QUNHUA WANG ,  Soo Young Choi ,  Robin L. Tiner ,  John M. White ,  Gaku Furuta ,  Beom Soo Park

IPC分类号： C23C16/04

摘要： Device for processing a substrate are described herein. An apparatus for controlling deposition on a substrate can include a chamber comprising a shadow frame support, a substrate support comprising a substrate supporting surface, a shadow frame with a shadow frame body including a first support surface, a second support surface opposite the first surface, and a detachable lip connected with the shadow frame body. The detachable lip can include a support connection, a first lip surface facing the substrate, a second lip surface opposite the first lip surface, a first edge positioned over the first support surface, and a second edge opposite the first edge to contact the substrate.

摘要翻译： 本文描述了用于处理衬底的装置。 用于控制基板上的沉积的装置可以包括：腔室，其包括阴影框架支撑件，包括基板支撑表面的基板支撑件，具有包括第一支撑表面的阴影框架主体的阴影框架，与第一表面相对的第二支撑表面， 以及与阴影框体连接的可拆卸唇缘。 可拆卸唇缘可以包括支撑连接，面向基底的第一唇缘表面，与第一唇缘表面相对的第二唇缘表面，位于第一支撑表面上方的第一边缘以及与第一边缘相对的第二边缘以接触基底。

公开(公告)号：USD664249S1

公开(公告)日：2012-07-24

申请号：US29396608

申请日：2011-07-01

申请人： Qunhua Wang ,  Robin L. Tiner

设计人： Qunhua Wang ,  Robin L. Tiner

公开(公告)号：US09200368B2

公开(公告)日：2015-12-01

申请号：US13207227

申请日：2011-08-10

申请人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

发明人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

IPC分类号： C23C16/455 ,  C23C16/34 ,  C23C16/509 ,  H01J37/32

CPC分类号： H01J37/3244 ,  C23C16/345 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32596 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3325 ,  Y10T29/49885 ,  Y10T29/49996

摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.

摘要翻译： 提供了用于在处理室中分配气体的气体扩散板的实施例。 气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。 气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。 延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性 。 从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。 扩散板的弯曲可以通过热处理或真空工艺来实现。 从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。 具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

公开(公告)号：US08721791B2

公开(公告)日：2014-05-13

申请号：US13163241

申请日：2011-06-17

申请人： Robin L. Tiner ,  Soo Young Choi ,  Qunhua Wang ,  Jrjyan Jerry Chen

发明人： Robin L. Tiner ,  Soo Young Choi ,  Qunhua Wang ,  Jrjyan Jerry Chen

IPC分类号： C23C16/455 ,  H01J37/32

CPC分类号： B05B1/005 ,  C23C16/45565 ,  H01J37/3244

摘要： Embodiments of the present invention generally provide apparatus and methods for supporting a gas distribution showerhead in a processing chamber. In one embodiment, a gas distribution showerhead for a vacuum chamber is provided. The gas distribution showerhead comprises a body having a first side and a second side opposite the first side, and a plurality of gas passages formed through the body, the gas passages comprising a first bore formed in the first side that is fluidly coupled to a second bore formed in the second side by a restricting orifice, and a suspension feature formed in the first bore of at least one of the gas passages.

摘要翻译： 本发明的实施例通常提供用于在处理室中支撑气体分配喷头的装置和方法。 在一个实施例中，提供了一种用于真空室的气体分配喷头。 所述气体分配喷头包括具有第一侧和与所述第一侧相对的第二侧的主体和穿过所述主体形成的多个气体通道，所述气体通道包括形成在所述第一侧中的第一孔，所述第一孔流体地联接到第二侧 通过限制孔形成在第二侧中的孔，以及形成在至少一个气体通道的第一孔中的悬挂特征。

公开(公告)号：US20110290183A1

公开(公告)日：2011-12-01

申请号：US13207227

申请日：2011-08-10

申请人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

发明人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

IPC分类号： C23C16/455

CPC分类号： H01J37/3244 ,  C23C16/345 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32596 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3325 ,  Y10T29/49885 ,  Y10T29/49996

摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.

摘要翻译： 提供了用于在处理室中分配气体的气体扩散板的实施例。 气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。 气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。 延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性 。 从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。 扩散板的弯曲可以通过热处理或真空工艺来实现。 从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。 具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

公开(公告)号：US09382621B2

公开(公告)日：2016-07-05

申请号：US12700484

申请日：2010-02-04

申请人： Soo Young Choi ,  Robin L. Tiner ,  Shinichi Kurita ,  John M. White ,  Carl A. Sorensen ,  Jeffrey A. Kho ,  Suhail Anwar ,  Makoto Inagawa ,  Gaku Furuta

发明人： Soo Young Choi ,  Robin L. Tiner ,  Shinichi Kurita ,  John M. White ,  Carl A. Sorensen ,  Jeffrey A. Kho ,  Suhail Anwar ,  Makoto Inagawa ,  Gaku Furuta

IPC分类号： C23C16/509 ,  C23C16/458 ,  H01J37/32 ,  H01L21/67

CPC分类号： C23C16/5096 ,  C23C16/4585 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32568 ,  H01L21/67069

摘要： A method and apparatus for providing an electrically symmetrical ground or return path for electrical current between two electrodes is described. The apparatus includes at least on radio frequency (RF) device coupled to one of the electrodes and between a sidewall and/or a bottom of a processing chamber. The method includes moving one electrode relative to another and realizing a ground return path based on the position of the displaced electrode using one or both of a RF device coupled to a sidewall and the electrode, a RF device coupled to a bottom of the chamber and the electrode, or a combination thereof.

摘要翻译： 描述了一种用于提供用于两个电极之间的电流的电对称接地或返回路径的方法和装置。 该装置至少包括耦合到电极之一和处理室的侧壁和/或底部之间的射频（RF）装置。 该方法包括相对于另一个电极移动一个电极，并且基于使用耦合到侧壁和电极的RF器件中的一个或两个的位移电极实现接地返回路径，耦合到腔室的底部的RF器件和 电极或其组合。