摘要:
A solid-state imaging device includes a semiconductor substrate including a pixel portion having a photoelectric conversion portion and a peripheral circuit portion; a first sidewall composed of a sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the pixel portion; a second sidewall composed of the sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the peripheral circuit portion; a first silicide blocking film composed of the sidewall film and disposed on the photoelectric conversion portion and a part of the MOS transistors in the pixel portion; and a second silicide blocking film disposed on the MOS transistors in the pixel portion so as to overlap with a part of the first silicide blocking film, wherein the MOS transistors in the pixel portion are covered with the first and second silicide blocking films.
摘要:
A coating composition for a sliding member, wherein from 30 to 120 parts by weight of a solid lubricant and from 5 to 80 parts by weight of a silicone resin are included per 100 parts by weight of a film-forming organic resin. As a result of forming the film on the surface of the sliding member, a coating composition for a sliding member is provided whereby low frictional drag can be maintained for an extended period of time, and the sticking of the sliding member to glass surfaces and similar smooth surfaces can be prevented.
摘要:
A solid-state imaging device includes a semiconductor substrate including a pixel portion having a photoelectric conversion portion and a peripheral circuit portion; a first sidewall composed of a sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the pixel portion; a second sidewall composed of the sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the peripheral circuit portion; a first silicide blocking film composed of the sidewall film and disposed on the photoelectric conversion portion and a part of the MOS transistors in the pixel portion; and a second silicide blocking film disposed on the MOS transistors in the pixel portion so as to overlap with a part of the first silicide blocking film, wherein the MOS transistors in the pixel portion are covered with the first and second silicide blocking films.
摘要:
Provided is a particle characterization device that can ensure measurement accuracy even though light detecting means has a single configuration, and enables the number of optical elements to be decreased as much as possible to suppress cost increase and reduce the number of adjustment places, and the particle characterization device has an incident side polarizer and an incident side ¼ wavelength plate as an illumination optical system mechanism and, as a light receiving optical system mechanism, an exit side ¼ wavelength plate and an exit side polarizer that can be rotated to a plurality of angle positions around a cell, wherein light attenuating means that prevents a polarization state from being changed is provided on a light path, and a light attenuation rate by the light attenuating means is controlled such that a detected light intensity at each measurement position falls within a measurement range of light detecting means.
摘要:
A solid-state imaging device includes, on a semiconductor substrate, a pixel portion having a plurality of pixels provided with a photoelectric conversion portion, which photoelectrically converts incident light to obtain a signal charge and a pixel transistor portion, which converts the signal charge read from the photoelectric conversion portion to a voltage, wherein an element isolation region disposed in the pixel portion includes an insulating film buried in a trench disposed in the semiconductor substrate, and the insulating film includes an insulating film having a negative charge.
摘要:
A solid-state imaging device includes a semiconductor substrate including a pixel portion having a photoelectric conversion portion and a peripheral circuit portion; a first sidewall composed of a sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the pixel portion; a second sidewall composed of the sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the peripheral circuit portion; a first silicide blocking film composed of the sidewall film and disposed on the photoelectric conversion portion and a part of the MOS transistors in the pixel portion; and a second silicide blocking film disposed on the MOS transistors in the pixel portion so as to overlap with a part of the first silicide blocking film, wherein the MOS transistors in the pixel portion are covered with the first and second silicide blocking films.
摘要:
Disclosed is an image forming system, which comprises an image forming apparatus, and a toner container mountable to the image forming apparatus. The image forming apparatus includes a control section, and an information acquisition section which acquires the toner-quality information about a toner container which is demountably mounted thereto. The control section is operable, based on the toner-quality information acquired by the information acquisition section, to identify the quality of the toner contained in the toner container and set a printing function based on the identified toner quality.
摘要:
The present invention provides a manufacturing method of a semiconductor device having a semiconductor nonvolatile memory element that is highly reliable and that can increase a variation of a threshold voltage. Further, the present invention provides a method for manufacturing a semiconductor device having a highly reliable semiconductor nonvolatile memory element using a large substrate. According to the present invention, sputtering using, as a target, a solid solution containing silicon that exceeds a solid solubility limit is conducted, so that a conductive film including a conductive layer of a metal element that is a main component of the solid solution and silicon particles is formed, and then, the conductive layer of the metal element is removed to expose silicon particles. Furthermore, a semiconductor device having a semiconductor nonvolatile memory element using the silicon particles as a floating gate electrode is manufactured.
摘要:
According to the present invention, a manufacturing device of a semiconductor device provided with a device for uniformly doping with an impurity element a large area substrate capable of multiple patterns for the purpose of mass-production is provided. The present invention has a feature that a cross section of an ion current is to be a linear shape or a rectangle, and the large area substrate is moved in a direction perpendicular to a longitudinal direction of the ion current while keeping the large area substrate inclined at a predetermined tilt angle θ to the ion current. In this invention, an incident angle of an ion beam is adjusted as changing the tile angle θ. By making the large area substrate inclined to a horizontal plane, the width of the longitudinal direction of the ion current can be shortened than the length of a side of the substrate.
摘要:
The present invention provides an apparatus for measuring particle distribution for determining particle size distribution with higher precision by compensating for a reduction in scattering light due to the color of a sample and due to the particle size characterized by Mie scattering theory, and a method for measuring particle size distribution using such an apparatus. The apparatus for measuring particle distribution irradiates a laser beam to be measured, converts the resulting scattering light into an electrical detection signal, and performs inverse operation processes on the detection signal to calculate the particle size distribution of the sample. The measuring apparatus is provided with a laser light source that variably changes the wavelength of the laser beam depending on samples. The measuring apparatus is further provided with a particle size distribution analysis section for calculating the particle size distribution of the sample by using scattering light from the sample that are obtained upon application of the laser beam having a wavelength that allows measurement of the strongest from scattering light the sample.