公开(公告)号：US09978568B2

公开(公告)日：2018-05-22

申请号：US14168565

申请日：2014-01-30

Applicant: Tokyo Electron Limited

Inventor： Zhiying Chen ,  Lee Chen ,  Merritt Funk

IPC: H01J37/30 ,  H01J37/32

CPC classification number: H01J37/32899 ,  H01J37/30 ,  H01J37/32082 ,  H01J37/3233

Abstract: A processing system is disclosed, having an electron beam source chamber that excites plasma to generate an electron beam, and an ion beam source chamber that houses a substrate and also excites plasma to generate an ion beam. The processing system also includes a dielectric injector coupling the electron beam source chamber to the ion beam source chamber that simultaneously injects the electron beam and the ion beam and propels the electron beam and the ion beam in opposite directions. The voltage potential gradient between the electron beam source chamber and the ion beam source chamber generates an energy field that is sufficient to maintain the electron beam and ion beam as a plasma treats the substrate so that radio frequency (RF) power initially applied to the processing system to generate the electron beam can be terminated thus improving the power efficiency of the processing system.

公开(公告)号：US09728416B2

公开(公告)日：2017-08-08

申请号：US13842532

申请日：2013-03-15

Applicant: Tokyo Electron Limited

Inventor： Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Iwao Toshihiko ,  Peter L. G. Ventzek

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/67 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32192 ,  H01J37/32256 ,  H01J37/32311 ,  H01L21/67069

Abstract: A resonator system is provided with one or more resonant cavities configured to couple electromagnetic (EM) energy in a desired EM wave mode to plasma by generating resonant microwave energy in a resonant cavity adjacent the plasma. The resonator system can be coupled to a process chamber using one or more interface and isolation assemblies, and each resonant cavity can have a plurality of plasma tuning rods coupled thereto. The plasma tuning rods can be configured to couple the EM-energy from the resonant cavities to the process space within the process chamber.

公开(公告)号：US20160268136A1

公开(公告)日：2016-09-15

申请号：US15164312

申请日：2016-05-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Lee Chen ,  Zhiying Chen ,  Jianping Zhao ,  Merritt Funk

IPC: H01L21/263 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/263 ,  H01J37/32431 ,  H01J37/32568 ,  H01J37/32697 ,  H01L21/67069

Abstract: This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. The plasma processing system may include a plasma chamber that can receive and process the substrate using plasma for etching the substrate, doping the substrate, or depositing a film on the substrate. This disclosure relates to a plasma processing system that may be configured to enable non-ambipolar diffusion to counter ion loss to the chamber wall. The plasma processing system may include a ring cavity coupled to the plasma processing system that is in fluid communication with plasma generated in the plasma processing system. The ring cavity may be coupled to a power source to form plasma that may diffuse ions into the plasma processing system to minimize the impact of ion loss to the chamber wall.

Abstract translation: 本公开涉及一种等离子体处理系统，用于控制正被处理的衬底的边缘或周边附近的等离子体密度。 等离子体处理系统可以包括等离子体室，其可以使用等离子体接收和处理衬底，用于蚀刻衬底，掺杂衬底或在衬底上沉积膜。 本公开涉及等离子体处理系统，其可以被配置为使得非双极扩散能够抵消对室壁的离子损失。 等离子体处理系统可以包括耦合到等离子体处理系统的环形空腔，该等离子体处理系统与等离子体处理系统中产生的等离子体流体连通。 环腔可以耦合到电源以形成等离子体，其可以将离子扩散到等离子体处理系统中以最小化离子损失对室壁的影响。

公开(公告)号：US20140377966A1

公开(公告)日：2014-12-25

申请号：US14309090

申请日：2014-06-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Merritt Funk ,  Jianping Zhao ,  Lee Chen

IPC: H01L21/268 ,  H01L21/67

CPC classification number: H01L21/268 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32266

Abstract: A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electromagnetic energy may be conditioned prior to entering the interior cavity to improve uniformity or stability of the electric field. The conditioning may include, but is not limited to, phase angle, field angle, and number of feeds into the interior cavity.

Abstract translation: 公开了一种处理系统，其具有具有内部空腔的动力传递元件，该内部空腔将电磁能量靠近内腔中的连续狭缝传播。 连续狭缝在内腔和衬底处理室之间形成开口。 电磁能可以在连续狭缝中产生交替电荷，使得能够产生可以传播到处理室中的电场。 可以在进入内部空腔之前调节电磁能量以改善电场的均匀性或稳定性。 调节可以包括但不限于相角，场角和进入内腔的进给次数。

公开(公告)号：US20140273538A1

公开(公告)日：2014-09-18

申请号：US14212438

申请日：2014-03-14

Applicant: Tokyo Electron Limited

Inventor： Lee Chen ,  Zhiying Chen ,  Jianping Zhao ,  Merritt Funk

IPC: H01L21/263

CPC classification number: H01L21/263 ,  H01J37/32431 ,  H01J37/32568 ,  H01J37/32697 ,  H01L21/67069

Abstract: This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. The plasma processing system may include a plasma chamber that can receive and process the substrate using plasma for etching the substrate, doping the substrate, or depositing a film on the substrate. This disclosure relates to a plasma processing system that may be configured to enable non-ambipolar diffusion to counter ion loss to the chamber wall. The plasma processing system may include a ring cavity coupled to the plasma processing system that is in fluid communication with plasma generated in the plasma processing system. The ring cavity may be coupled to a power source to form plasma that may diffuse ions into the plasma processing system to minimize the impact of ion loss to the chamber wall.

Abstract translation: 本公开涉及一种等离子体处理系统，用于控制正被处理的衬底的边缘或周边附近的等离子体密度。 等离子体处理系统可以包括等离子体室，其可以使用等离子体接收和处理衬底，用于蚀刻衬底，掺杂衬底或在衬底上沉积膜。 本公开涉及等离子体处理系统，其可以被配置为使得非双极扩散能够抵消对室壁的离子损失。 等离子体处理系统可以包括耦合到等离子体处理系统的环形空腔，该等离子体处理系统与等离子体处理系统中产生的等离子体流体连通。 环腔可以耦合到电源以形成等离子体，其可以将离子扩散到等离子体处理系统中以最小化离子损失对室壁的影响。

公开(公告)号：US20250069852A1

公开(公告)日：2025-02-27

申请号：US18453875

申请日：2023-08-22

Applicant: Tokyo Electron Limited

Inventor： Justin Moses ,  Merritt Funk ,  Chelsea DuBose ,  Barton Lane

IPC: H01J37/32 ,  H01L21/311

Abstract: A method for multitone plasma processing includes providing a substrate into a plasma processing chamber, igniting a plasma in the plasma processing chamber with a multitone signal, and performing a first plasma process on the substrate with the plasma. The multitone signal includes a first tone and a second tone.

公开(公告)号：US20240162619A1

公开(公告)日：2024-05-16

申请号：US17985360

申请日：2022-11-11

Applicant: Tokyo Electron Limited

Inventor： Chelsea DuBose ,  Barton Lane ,  Merritt Funk ,  Justin Moses

IPC: H01Q9/27 ,  H01Q5/25

CPC classification number: H01Q9/27 ,  H01Q5/25

Abstract: According to an embodiment, a radiating structure of a resonating structure used for plasma processing is disclosed. The radiating structure includes a set of first arms and a set of second arms. Each first arm has a first inductance and is coupled to a respective first capacitor and a respective second capacitor of the resonating structure to form a corresponding first resonant circuit operating at a first resonance frequency. Each second arm has a second inductance and is coupled to a respective third capacitor and a respective fourth capacitor of the resonating structure to form a corresponding second resonant circuit operating at a second resonance frequency. In a first mode of operation, the resonating structure operates as a single resonance antenna. In a second mode of operation, the resonating structure operates as a parallel resonance antenna.

公开(公告)号：US20230377845A1

公开(公告)日：2023-11-23

申请号：US17748737

申请日：2022-05-19

Applicant: Tokyo Electron Limited

Inventor： Merritt Funk ,  Barton Lane

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32165 ,  H01J37/3211 ,  H01J37/32651 ,  H01J37/32146

Abstract: An apparatus for plasma processing includes a first resonating structure and a second resonating structure. The first resonating structure is coupled to a first RF generator through a first matching circuit. The second resonating structure surrounds the first resonating structure. The second resonating structure is coupled to a second RF generator through a second matching circuit.

公开(公告)号：US11817296B2

公开(公告)日：2023-11-14

申请号：US16913545

申请日：2020-06-26

Applicant: Tokyo Electron Limited

Inventor： Barton Lane ,  Merritt Funk ,  Yohei Yamazawa ,  Justin Moses ,  Chelsea DuBose ,  Michael Hummel

IPC: H01J37/32 ,  G01R29/08

CPC classification number: H01J37/32174 ,  G01R29/0878

Abstract: A radio frequency sensor assembly includes a sensor casing disposed around a central hole, the sensor casing including a first conductive cover and a second conductive cover. The assembly includes a cavity disposed around the central hole and includes a dielectric material, the cavity being bounded by a first major outer surface and a second major outer surface along a radial direction from a center of the central hole, where the first conductive cover is electrically coupled to the second conductive cover through a coupling region beyond the second major outer surface of the cavity, and electrically insulated from the second conductive cover by the cavity and the central hole. The assembly includes a current sensor electrically insulated from the sensor casing and including a current pickup disposed symmetrically around the central hole, the current pickup being disposed within the cavity and being insulated from the sensor casing.

公开(公告)号：US11721524B2

公开(公告)日：2023-08-08

申请号：US17374857

申请日：2021-07-13

Applicant: Tokyo Electron Limited

Inventor： Merritt Funk ,  Chelsea Dubose ,  Justin Moses ,  Kazuki Moyama ,  Kazushi Kaneko

IPC: H03F3/68 ,  H01J37/32 ,  H03F3/21 ,  H03F1/02 ,  H03F1/56

CPC classification number: H01J37/32183 ,  H03F1/0288 ,  H03F1/56 ,  H03F3/21 ,  H03F2200/222 ,  H03F2200/387 ,  H03F2200/451

Abstract: Embodiments are described herein for power generation systems and methods that use quadrature splitters and combiners to facilitate plasma stability and control. For one embodiment, a quadrature splitter receives an input signal and generates a first and second signals as outputs with the second signal being ninety degrees out of phase with respect to the first signal. Two amplifiers then generate a first and second amplified signals. A quadrature combiner receives the first and second amplified signals and generates a combined amplified signal that represents re-aligned versions of the first and second amplified signals. The power amplifiers can be combined into a system to generate a high power output to a processing chamber. Further, detectors can generate measurements used to monitor and control power generation. The power amplifiers, system, and methods provide significant advantages for high-power generation delivered to process chambers for plasma generation during plasma processing.