公开(公告)号：US20060093010A1

公开(公告)日：2006-05-04

申请号：US11220826

申请日：2005-09-08

申请人： Takuro Sekiya ,  Akira Sakurai ,  Masayoshi Katoh ,  Teruyuki Furuta ,  Kazuya Miyagaki ,  Ken Kanai ,  Atsuyuki Watada ,  Shunichi Sato ,  Koei Suzuki ,  Satoru Sugawara ,  Shinji Satoh ,  Shuuichi Hikichi ,  Naoto Jikutani ,  Takashi Takahashi ,  Akihiro Itoh

发明人： Takuro Sekiya ,  Akira Sakurai ,  Masayoshi Katoh ,  Teruyuki Furuta ,  Kazuya Miyagaki ,  Ken Kanai ,  Atsuyuki Watada ,  Shunichi Sato ,  Koei Suzuki ,  Satoru Sugawara ,  Shinji Satoh ,  Shuuichi Hikichi ,  Naoto Jikutani ,  Takashi Takahashi ,  Akihiro Itoh

IPC分类号： H01S3/08 ,  H01S5/00

CPC分类号： H01S5/18361 ,  H01L2224/48091 ,  H01S5/0071 ,  H01S5/02284 ,  H01S5/0262 ,  H01S5/0264 ,  H01S5/0683 ,  H01S5/18313 ,  H01S5/18358 ,  H01S5/32366 ,  H01S5/423 ,  H01S2301/173 ,  H01L2924/00014

摘要： A surface-emission laser diode includes a distributed Bragg reflector tuned to a wavelength of 1.1 μm or longer, wherein the distributed Bragg reflector includes an alternate repetition of a low-refractive index layer and a high-refractive index layer, with a heterospike buffer layer having an intermediate refractive index interposed therebetween with a thickness in the range of 5-50 nm

摘要翻译： 表面发射激光二极管包括调谐到波长为1.1μm或更长的分布布拉格反射器，其中分布布拉格反射器包括低折射率层和高折射率层的交替重复，具有异质缓冲层 其间具有中间折射率，其厚度在5-50nm的范围内

公开(公告)号：US09063004B2

公开(公告)日：2015-06-23

申请号：US13602645

申请日：2012-09-04

申请人： Toshishige Fujii ,  Satoru Sugawara

发明人： Toshishige Fujii ,  Satoru Sugawara

IPC分类号： H01J5/02 ,  G01J1/04 ,  H01S5/022 ,  H01S5/0683 ,  H01S5/42

CPC分类号： G01J1/0403 ,  H01S5/02236 ,  H01S5/02248 ,  H01S5/02296 ,  H01S5/0683 ,  H01S5/423

摘要： A ceramic package includes a chip mounting portion, a photodiode (PD) mounting portion, a plurality of connecting terminals, and a gold-plated portion. The chip mounting portion is a portion on which a surface-emitting laser array chip is mounted on a first ceramic layer. The PD mounting portion is provided to a second ceramic layer stacked on the positive side in a c-axis direction of the first ceramic layer. Openings are formed at four corners of the PD mounting portion. A scale is formed on a portion that can be observed through the opening of the second ceramic layer on the surface of the positive side in the c-axis direction of the first ceramic layer.

摘要翻译： 陶瓷封装包括芯片安装部分，光电二极管（PD）安装部分，多个连接端子和镀金部分。 芯片安装部分是表面发射激光器阵列芯片安装在第一陶瓷层上的部分。 PD安装部设置在层叠在第一陶瓷层的c轴方向的正侧的第二陶瓷层上。 开口形成在PD安装部分的四个角处。 在通过第一陶瓷层的c轴方向的正侧的表面上的第二陶瓷层的开口可以观察到的部分上形成标尺。

公开(公告)号：US08675271B2

公开(公告)日：2014-03-18

申请号：US12983586

申请日：2011-01-03

申请人： Naoto Jikutani ,  Kazuhiro Harasaka ,  Satoru Sugawara ,  Shunichi Sato

发明人： Naoto Jikutani ,  Kazuhiro Harasaka ,  Satoru Sugawara ,  Shunichi Sato

IPC分类号： G02B26/08 ,  H01S5/00

CPC分类号： H01S5/18394 ,  B41J2/471 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/0655 ,  H01S5/18311 ,  H01S5/18355 ,  H01S5/18358 ,  H01S5/3432 ,  H01S2301/14 ,  H01S2301/18

摘要： A disclosed surface-emitting laser element includes an emission region configured to emit a laser beam and a high reflectance region including a first dielectric film having a first refractive index and a second dielectric film having a second refractive index differing from the first refractive index where the first dielectric film and the second dielectric film are stacked within the emission region to provide high reflectance. In the surface-emitting laser element, the high reflectance region is formed in a region including a central portion of the emission region and is configured to include shape anisotropy in two orthogonal directions in a plane in parallel with the emission region.

摘要翻译： 所公开的表面发射激光元件包括配置为发射激光束的发射区域和包括具有第一折射率的第一电介质膜和具有与第一折射率不同的第二折射率的第二电介质膜的高反射率区域， 第一电介质膜和第二电介质膜堆叠在发射区域内以提供高反射率。 在表面发射激光器元件中，高反射率区域形成在包括发射区域的中心部分的区域中，并且被构造成在与发射区域平行的平面中的两个正交方向上包括形状各向异性。

公开(公告)号：US20130230070A1

公开(公告)日：2013-09-05

申请号：US13866445

申请日：2013-04-19

申请人： Shunichi Sato ,  Akihiro Itoh ,  Satoru Sugawara ,  Hiroyoshi Shouji

发明人： Shunichi Sato ,  Akihiro Itoh ,  Satoru Sugawara ,  Hiroyoshi Shouji

IPC分类号： H01S5/18

CPC分类号： H01S5/18 ,  B82Y20/00 ,  H01S5/0203 ,  H01S5/18313 ,  H01S5/18358 ,  H01S5/2213 ,  H01S5/3434 ,  H01S5/423 ,  H01S2302/00

摘要： A surface-emitting laser array includes a plurality of surface-emitting laser elements. Each surface-emitting laser element includes a first reflection layer formed on a substrate, a resonator formed in contact with the first reflection layer and containing an active layer, and a second reflection layer formed over the first reflection layer and in contact with the resonator. The second reflection layer contains a selective oxidation layer. The first reflection layer contains on the active layer side at least a low refractive index layer having an oxidation rate equivalent to or larger than an oxidation rate of a selective oxidation layer contained in the second reflection layer. The resonator is made of an AlGaInPAs base material containing at least In. A bottom of a mesa structure is located under the selective oxidation layer and over the first reflection layer.

公开(公告)号：US20070013597A1

公开(公告)日：2007-01-18

申请号：US11486231

申请日：2006-07-12

申请人： Satoru Sugawara

发明人： Satoru Sugawara

IPC分类号： H01Q13/00

CPC分类号： H01Q9/28 ,  H01Q3/242

摘要： This patent specification describes an antenna device which includes a non-directional antenna having a radiating element and a ground plate, a coaxial line configured to feed an electromagnetic power to the non-directional antenna, a dielectric film arranged on the ground plate, including a dielectric material, a short circuit line arranged on the dielectric film, formed of a conductive pattern and configured to connect an inner conductor of the coaxial line to an outer conductor of the coaxial line and a switch arranged at a portion of the short circuit line to switch a state between a non-shorted state and a shorted state.

摘要翻译： 该专利说明书描述了一种天线装置，其包括具有辐射元件和接地板的非定向天线，配置为向非定向天线馈送电磁功率的同轴线，布置在接地板上的电介质膜，包括 介电材料，布置在电介质膜上的短路线，由导电图案形成，并且被配置为将同轴线的内导体连接到同轴线的外导体，以及布置在短路线的一部分上的开关 在非短路状态和短路状态之间切换状态。

公开(公告)号：US06411175B1

公开(公告)日：2002-06-25

申请号：US09452693

申请日：1999-12-03

申请人： Satoru Sugawara ,  Koji Mizuno

发明人： Satoru Sugawara ,  Koji Mizuno

IPC分类号： H01P308

CPC分类号： H01P5/16

摘要： In a power divider/combiner, two quarter wavelength lines are connected to a first I/O terminal. A first transmission line is connected between the other end of one of the quarter wavelength lines and one of the second I/O terminals, a second transmission line is connected between the other end of the remaining quarter wavelength line and the remaining second I/O terminal, a third transmission line is connected between an absorption resistor and the one of the second I/O terminals, and a forth transmission line is connected between the absorption resistor and the remaining second I/O terminal. Assuming that the characteristic impedance at the I/O terminals is Z0, the characteristic impedance of each of the four transmission lines is set to {square root over (2)}·Z0.

摘要翻译： 在功率分配器/组合器中，两个四分之一波长线连接到第一个I / O端子。 第一传输线连接在四分之一波长线之一的另一端和一个第二I / O端子之间，第二传输线连接在剩余四分之一波长线的另一端和剩余的第二I / O端子之间 端子之间，第三传输线连接在吸收电阻器和第二I / O端子之一中，并且第四传输线连接在吸收电阻器和剩余的第二I / O端子之间。 假设I / O端子的特性阻抗为Z0，将四条传输线中的每一条的特性阻抗设置为{2（2）}的平方根Z0。

公开(公告)号：US6008770A

公开(公告)日：1999-12-28

申请号：US870676

申请日：1997-06-06

申请人： Satoru Sugawara

发明人： Satoru Sugawara

IPC分类号： H01Q13/08 ,  H01Q13/10

CPC分类号： H01Q13/085

摘要： A tapered slot plane antenna apparatus for a millimeter wave radio communication system which provides a tapered pattern composed by utilizing a Fermi-Diac distribution function so as to consider an impedance matching and a directivity of the antenna apparatus. Supporting layers and protection layers may be utilized to provide sufficient strength for implementation in a compact millimeter wave radio communication system. The plane antenna may further prevent a directivity from deteriorating even if distances between end portions of an antenna aperture portion and ends of an antenna are decreased. A slot width of a slot line may be widened in tapering for radiating an electromagnetic wave in a progressive direction of the slot line by a conductor portion having a slot line and a corrugated structure portion at respective end portions located parallel to a radiating direction of the electromagnetic wave.

摘要翻译： 一种用于毫米波无线电通信系统的锥形槽平面天线装置，其提供通过利用费米 - 迪亚克分配功能构成的锥形图案，以便考虑天线装置的阻抗匹配和方向性。 可以使用支撑层和保护层来提供足够的强度以在紧凑的毫米波无线电通信系统中实现。 即使天线孔径部分和天线端部之间的距离减小，平面天线也可进一步防止指向性恶化。 狭缝线的槽宽度可以在锥形化中加宽，以通过具有狭缝线和波纹结构部分的导体部分沿着槽线的逐行方向辐射电磁波，该导体部分在与 电磁波。

公开(公告)号：US09570887B2

公开(公告)日：2017-02-14

申请号：US14512592

申请日：2014-10-13

申请人： Naoto Jikutani ,  Shunichi Sato ,  Satoru Sugawara ,  Hiroshi Motomura

发明人： Naoto Jikutani ,  Shunichi Sato ,  Satoru Sugawara ,  Hiroshi Motomura

IPC分类号： H01L33/10 ,  H01S5/183 ,  H01S5/187 ,  B41J2/44 ,  B41J2/47 ,  H01S5/065 ,  H01S5/32 ,  H01S5/42

CPC分类号： H01S5/18361 ,  B41J2/442 ,  B41J2/473 ,  H01L33/10 ,  H01L33/105 ,  H01S5/0655 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18313 ,  H01S5/18347 ,  H01S5/1835 ,  H01S5/18358 ,  H01S5/18394 ,  H01S5/187 ,  H01S5/3202 ,  H01S5/423 ,  H01S2301/166 ,  H01S2301/176

摘要： A disclosed vertical cavity surface emitting laser device emits light orthogonally in relation to a substrate and includes a resonator structure including an active layer; and semiconductor multilayer reflectors disposed in such a manner as to sandwich the resonator structure between them and including a confinement structure which confines an injected current and transverse modes of oscillation light at the same time. The confinement structure has an oxidized region which surrounds a current passage region. The oxidized region is formed by oxidizing a part of a selective oxidation layer which includes aluminum and includes at least an oxide. The selective oxidation layer is at least 25 nm in thickness. The semiconductor multilayer reflectors include an optical confinement reducing section which reduces optical confinement in a transverse direction. The optical confinement reducing section is disposed on the substrate side in relation to the resonator structure.

摘要翻译： 所公开的垂直腔表面发射激光器装置相对于衬底正交地发光，并且包括包括有源层的谐振器结构; 以及半导体多层反射器，以将谐振器结构夹在它们之间并且包括同时限制注入的电流和横向振荡模式的约束结构的方式设置。 限制结构具有围绕电流通道区域的氧化区域。 通过氧化包括铝的部分选择性氧化层并至少包含一种氧化物而形成氧化区。 选择性氧化层的厚度至少为25nm。 半导体多层反射器包括减少横向光学限制的光限制减少部分。 光限制减少部分相对于谐振器结构设置在衬底侧。

公开(公告)号：US08891571B2

公开(公告)日：2014-11-18

申请号：US12989538

申请日：2009-04-28

申请人： Naoto Jikutani ,  Shunichi Sato ,  Satoru Sugawara ,  Hiroshi Motomura

发明人： Naoto Jikutani ,  Shunichi Sato ,  Satoru Sugawara ,  Hiroshi Motomura

IPC分类号： H01S5/00 ,  B41J2/385 ,  B41J2/45 ,  B41J2/47 ,  B41J2/44 ,  H01S5/183 ,  H01S5/42 ,  H01S5/065 ,  H01S5/32

CPC分类号： H01S5/18361 ,  B41J2/442 ,  B41J2/473 ,  H01L33/10 ,  H01L33/105 ,  H01S5/0655 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18313 ,  H01S5/18347 ,  H01S5/1835 ,  H01S5/18358 ,  H01S5/18394 ,  H01S5/187 ,  H01S5/3202 ,  H01S5/423 ,  H01S2301/166 ,  H01S2301/176

摘要： A disclosed vertical cavity surface emitting laser device emits light orthogonally in relation to a substrate and includes a resonator structure including an active layer; and semiconductor multilayer reflectors disposed in such a manner as to sandwich the resonator structure between them and including a confinement structure which confines an injected current and transverse modes of oscillation light at the same time. The confinement structure has an oxidized region which surrounds a current passage region. The oxidized region is formed by oxidizing a part of a selective oxidation layer which includes aluminum and includes at least an oxide. The selective oxidation layer is at least 25 nm in thickness. The semiconductor multilayer reflectors include an optical confinement reducing section which reduces optical confinement in a transverse direction. The optical confinement reducing section is disposed on the substrate side in relation to the resonator structure.

摘要翻译： 所公开的垂直腔表面发射激光器装置相对于衬底正交地发光，并且包括包括有源层的谐振器结构; 以及半导体多层反射器，以将谐振器结构夹在它们之间并且包括同时限制注入的电流和横向振荡模式的约束结构的方式设置。 限制结构具有围绕电流通道区域的氧化区域。 通过氧化包括铝的部分选择性氧化层并至少包含一种氧化物而形成氧化区。 选择性氧化层的厚度至少为25nm。 半导体多层反射器包括减少横向光学限制的光限制减少部分。 光限制减少部分相对于谐振器结构设置在衬底侧。

公开(公告)号：US06975663B2

公开(公告)日：2005-12-13

申请号：US10085204

申请日：2002-02-26

申请人： Takuro Sekiya ,  Akira Sakurai ,  Masayoshi Katoh ,  Teruyuki Furuta ,  Kazuya Miyagaki ,  Ken Kanai ,  Atsuyuki Watada ,  Shunichi Sato ,  Koei Suzuki ,  Satoru Sugawara ,  Shinji Satoh ,  Shuuichi Hikichi ,  Naoto Jikutani ,  Takashi Takahashi ,  Akihiro Itoh

发明人： Takuro Sekiya ,  Akira Sakurai ,  Masayoshi Katoh ,  Teruyuki Furuta ,  Kazuya Miyagaki ,  Ken Kanai ,  Atsuyuki Watada ,  Shunichi Sato ,  Koei Suzuki ,  Satoru Sugawara ,  Shinji Satoh ,  Shuuichi Hikichi ,  Naoto Jikutani ,  Takashi Takahashi ,  Akihiro Itoh

IPC分类号： H01S5/022 ,  H01S5/183 ,  H01S5/323 ,  H01S5/42 ,  H01S3/08 ,  H01S5/00

CPC分类号： H01S5/18361 ,  H01L2224/48091 ,  H01S5/0071 ,  H01S5/02284 ,  H01S5/0262 ,  H01S5/0264 ,  H01S5/0683 ,  H01S5/18313 ,  H01S5/18358 ,  H01S5/32366 ,  H01S5/423 ,  H01S2301/173 ,  H01L2924/00014

摘要： A surface-emission laser diode includes a distributed Bragg reflector tuned to wavelength of 1.1 μm or longer, wherein the distributed Bragg reflector includes an alternate repetition of a low-refractive index layer and a high-refractive index layer, with a heterospike buffer layer having an intermediate refractive index interposed therebetween with a thickness in the range of 5-50 nm.

摘要翻译： 表面发射激光二极管包括调谐到波长为1.1μm或更长的分布布拉格反射器，其中分布布拉格反射器包括低折射率层和高折射率层的交替重复，其中异相缓冲层具有 插入其间的中间折射率，厚度在5-50nm的范围内。