公开(公告)号：US08878250B2

公开(公告)日：2014-11-04

申请号：US13594442

申请日：2012-08-24

申请人： Masahiko Hata ,  Sadanori Yamanaka ,  Tomoyuki Takada ,  Kazuhiko Honjo

发明人： Masahiko Hata ,  Sadanori Yamanaka ,  Tomoyuki Takada ,  Kazuhiko Honjo

IPC分类号： H01L29/737 ,  H01L23/31 ,  H01L27/06 ,  H01L23/00

CPC分类号： H01L27/0605 ,  H01L23/3121 ,  H01L23/3171 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05569 ,  H01L2224/05571 ,  H01L2224/13023 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/05552

摘要： Electronic device is provided, including: a base wafer whose surface is made of silicon crystal; a Group 3-5 compound semiconductor crystal formed directly or indirectly on partial region of the silicon crystal; an electronic element including a portion of the Group 3-5 compound semiconductor crystal as active layer; an insulating film formed directly or indirectly on the base wafer and covering the electronic element; an electrode formed directly or indirectly on the insulating film; a first coupling wiring extending through the insulating film, having at least a portion thereof formed directly or indirectly on the insulating film, and electrically coupling the electronic element with the electrode; a passive element formed directly or indirectly on the insulating film; a second coupling wiring extending through the insulating film, having at least a portion thereof formed directly or indirectly on the insulating film, and electrically coupling the electronic element with the passive element.

摘要翻译： 提供电子器件，其包括：其表面由硅晶体制成的基底晶片; 在硅晶体的部分区域上直接或间接形成的3-5族化合物半导体晶体; 包含部分3-5族化合物半导体晶体作为活性层的电子元件; 直接或间接地形成在基底晶片上并覆盖电子元件的绝缘膜; 在绝缘膜上直接或间接形成的电极; 延伸穿过所述绝缘膜的第一耦合布线，其至少一部分直接或间接地形成在所述绝缘膜上，并且将所述电子元件与所述电极电耦合; 绝缘膜上直接或间接形成的无源元件; 延伸穿过绝缘膜的第二耦合布线，其至少一部分直接或间接地形成在绝缘膜上，并将电子元件与无源元件电连接。

公开(公告)号：US08772830B2

公开(公告)日：2014-07-08

申请号：US12811074

申请日：2008-12-26

申请人： Tomoyuki Takada ,  Sadanori Yamanaka ,  Masahiko Hata

发明人： Tomoyuki Takada ,  Sadanori Yamanaka ,  Masahiko Hata

IPC分类号： H01L29/12

CPC分类号： H01L29/045 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02463 ,  H01L21/02516 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639 ,  H01L29/205 ,  H01L29/66242 ,  H01L29/7371

摘要： A high-quality GaAs-type crystal thin film using an inexpensive Si wafer with good thermal release characteristics is achieved. Provided is a semiconductor wafer comprising an Si wafer; an inhibiting layer that is formed on the wafer and that inhibits crystal growth, the inhibiting layer including a covering region that covers a portion of the wafer and an open region that does not cover a portion of the wafer within the covering region; a Ge layer that is crystal-grown in the open region; a buffer layer that is crystal-grown on the Ge layer and is a group 3-5 compound semiconductor layer containing P; and a functional layer that is crystal-grown on the buffer layer. The Ge layer may be formed then annealing with a temperature and duration that enables movement of crystal defects.

摘要翻译： 实现了具有良好热释放特性的廉价Si晶片的高质量GaAs型晶体薄膜。 提供了包括Si晶片的半导体晶片; 所述抑制层形成在所述晶片上并且抑制晶体生长，所述抑制层包括覆盖所述晶片的一部分的覆盖区域和不覆盖所述覆盖区域内的所述晶片的一部分的开放区域; 在开放区域晶体生长的Ge层; 在Ge层上晶体生长并且是含有P的3-5族化合物半导体层的缓冲层; 以及在缓冲层上晶体生长的功能层。 可以形成Ge层，然后以能够移动晶体缺陷的温度和持续时间进行退火。

公开(公告)号：US08766318B2

公开(公告)日：2014-07-01

申请号：US12920455

申请日：2009-02-27

申请人： Masahiko Hata ,  Tomoyuki Takada

发明人： Masahiko Hata ,  Tomoyuki Takada

IPC分类号： H01L29/12

CPC分类号： H01L29/16 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02538 ,  H01L21/02546 ,  H01L21/02551 ,  H01L21/02609 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/045 ,  H01L29/165 ,  H01L29/267 ,  H01L29/78648 ,  H01L29/78681

摘要： The objective is to improve capabilities such as high-speed switching of a compound semiconductor device. Provided is a semiconductor wafer comprising a silicon wafer; an insulating film that is formed on the silicon wafer and that has an open portion reaching the silicon wafer; a Ge crystal formed in the open portion; a seed compound semiconductor crystal that is grown with the Ge crystal as a nucleus and that protrudes beyond a surface of the insulating film; and a laterally grown compound semiconductor layer that is laterally grown on the insulating film with a specified surface of the seed compound semiconductor crystal as a seed surface.

摘要翻译： 目的是提高复合半导体器件的高速切换等能力。 提供了包括硅晶片的半导体晶片; 绝缘膜，其形成在所述硅晶片上，并且具有到达所述硅晶片的开口部分; 形成在开口部的Ge晶体; 种子化合物半导体晶体，其以Ge晶体为核生长并突出超过绝缘膜的表面; 横向生长的化合物半导体层，其以种子化合物半导体晶体的指定表面作为种子表面在绝缘膜上横向生长。

公开(公告)号：US08709904B2

公开(公告)日：2014-04-29

申请号：US13131523

申请日：2009-11-26

申请人： Tomoyuki Takada ,  Masahiko Hata ,  Hisashi Yamada

发明人： Tomoyuki Takada ,  Masahiko Hata ,  Hisashi Yamada

IPC分类号： H01L21/331 ,  H01L21/336 ,  H01L21/46 ,  H01L21/78 ,  H01L21/26

CPC分类号： H01L21/02532 ,  H01L21/02667 ,  H01L21/2686 ,  H01L21/67115 ,  H01L29/78

摘要： There is provided a method of producing a semiconductor wafer by thermally processing a base wafer having a portion to be thermally processed that is to be thermally processed. The method comprises a step of providing, on the base wafer, a portion to be heated that generates heat through absorption of an electromagnetic wave and selectively heats the portion to be thermally processed, a step of applying an electromagnetic wave to the base wafer, and a step of lowering the lattice defect density of the portion to be thermally processed, by means of the heat generated by the portion to be heated through the absorption of the electromagnetic wave.

摘要翻译： 提供了通过热处理具有待热处理部分的基底晶片来制造半导体晶片的方法。 该方法包括在基底晶片上提供通过吸收电磁波产生热并选择性地加热待热处理的部分的加热部分，向基底晶片施加电磁波的步骤，以及 借助于通过吸收电磁波而被加热部分产生的热量来降低待热处理部分的晶格缺陷密度的步骤。

公开(公告)号：US08311235B2

公开(公告)日：2012-11-13

申请号：US12397626

申请日：2009-03-04

申请人： Tomoyuki Takada ,  Yasushi Maeda

发明人： Tomoyuki Takada ,  Yasushi Maeda

IPC分类号： H04B3/00 ,  H04B7/00 ,  G08B1/08

CPC分类号： H04B3/54 ,  H04B2203/545 ,  H04R5/04 ,  H04R2420/07 ,  H04S3/00

摘要： A method of controlling communication in a communication system includes a plurality of communication devices and a controller that transmits multi-channel data to the plurality of communication devices, executed in a communication device group to which power is supplied without passing through the controller, the method comprising the steps of determining a master communication device in the communication device group that sends the multi-channel data received wirelessly from the controller to other communication device included in the communication device group, according to wireless connection conditions between the controller and each communication device included in the communication device group, and sending, by the master via a wired connection, the multi-channel data received wirelessly from the controller to the other communication device included in the communication device group.

摘要翻译： 一种控制通信系统中的通信的方法包括：多个通信设备和控制器，该多个通信设备和控制器向多个通信设备发送多信道数据，在通过控制器提供电力的通信设备组中执行，该方法 包括以下步骤：根据控制器和包括的每个通信设备之间的无线连接条件，确定通信设备组中的主通信设备发送从控制器无线地接收到包括在通信设备组中的其他通信设备的无线接收的多信道数据 在通信设备组中，并且由主机经由有线连接发送从控制器无线地接收到包括在通信设备组中的其他通信设备的多信道数据。

公开(公告)号：US20120263190A1

公开(公告)日：2012-10-18

申请号：US13439376

申请日：2012-04-04

申请人： Makoto Umehara ,  Naoto Takahashi ,  Tomoyuki Takada ,  Wataru Tachiwa ,  Hitoshi Asai

发明人： Makoto Umehara ,  Naoto Takahashi ,  Tomoyuki Takada ,  Wataru Tachiwa ,  Hitoshi Asai

IPC分类号： H04L12/56

CPC分类号： H04J3/0635 ,  H04J3/0602

摘要： A communication apparatus performs communication of data using assigned time slots within a frame. In a case where data cannot be transmitted in a transmission time slot that has been assigned in order to transmit data, a time slot later than this transmission time slot is reserved as a time slot used to transmit the data, this later time slot being reserved within the frame having the transmission time slot in which the data cannot be transmitted.

摘要翻译： 通信装置使用帧内的分配时隙来进行数据的通信。 在为了发送数据而被分配的传输时隙中不能发送数据的情况下，将比该传输时隙晚的时隙保留为用于发送数据的时隙，这个稍后的时隙被保留 在具有无法发送数据的传输时隙的帧内。

公开(公告)号：US20110227199A1

公开(公告)日：2011-09-22

申请号：US13131513

申请日：2009-11-26

申请人： Masahiko Hata ,  Tomoyuki Takada ,  Hisashi Yamada

发明人： Masahiko Hata ,  Tomoyuki Takada ,  Hisashi Yamada

IPC分类号： H01L29/02 ,  H01L21/20 ,  H05B6/10

CPC分类号： H01L21/8258 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/02667 ,  H01L21/2686 ,  H01L21/67115 ,  H01L21/84

摘要： There is provided a method of producing a semiconductor wafer by thermally processing a base wafer having a portion to be thermally processed that has a single-crystal layer and is to be subjected to thermal processing and a portion to be protected that is to be protected from heal, to be added during the thermal processing. The method comprises a step of forming, above the portion to be protected, a protective layer for protecting the portion to be protected from an electromagnetic wave to be applied to the base wafer, and a step of annealing the portion to be thermally processed, by applying the electromagnetic wave to the entire base wafer.

摘要翻译： 提供了一种制造半导体晶片的方法，该方法通过热处理具有单晶层的热处理部分的基底晶片，并进行热处理和被保护的部分， 在热处理过程中加入。 该方法包括在待保护部分上形成用于保护被保护部分免受施加到基底晶片的电磁波的保护层的步骤，以及将要热处理的部分退火的步骤，通过 将电磁波施加到整个基底晶片。

公开(公告)号：US20110227129A1

公开(公告)日：2011-09-22

申请号：US13131498

申请日：2009-11-26

申请人： Sadanori Yamanaka ,  Masahiko Hata ,  Tomoyuki Takada

发明人： Sadanori Yamanaka ,  Masahiko Hata ,  Tomoyuki Takada

IPC分类号： H01L29/12 ,  H01L21/20

CPC分类号： H01L21/8258 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02636

摘要： A semiconductor wafer including: a base wafer; a seed crystal disposed on the base wafer; a compound semiconductor disposed above the seed crystal; and a high resistance layer disposed between the seed crystal and the compound semiconductor, the high resistance layer having a larger resistivity than the seed crystal, and the seed crystal lattice matching or pseudo lattice matching the compound semiconductor is provided.

摘要翻译： 一种半导体晶片，包括：基底晶片; 设置在基底晶片上的晶种; 设置在晶种上方的化合物半导体; 以及设置在晶种和化合物半导体之间的高电阻层，具有比晶种更大的电阻率的高电阻层，并且提供晶种匹配或伪晶格匹配化合物半导体。

公开(公告)号：US20110018030A1

公开(公告)日：2011-01-27

申请号：US12811074

申请日：2008-12-26

申请人： Tomoyuki Takada ,  Sadanori Yamanaka ,  Masahiko Hata

发明人： Tomoyuki Takada ,  Sadanori Yamanaka ,  Masahiko Hata

IPC分类号： H01L29/12 ,  H01L21/20

CPC分类号： H01L29/045 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02463 ,  H01L21/02516 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639 ,  H01L29/205 ,  H01L29/66242 ,  H01L29/7371

摘要： A high-quality GaAs-type crystal thin film using an inexpensive Si water with good thermal release characteristics is achieved. Provided is a semiconductor wafer comprising an Si wafer; an inhibiting layer that is formed on the wafer and that inhibits crystal growth, the inhibiting layer including a covering region that covers a portion of the wafer and an open region that does not cover a portion of the wafer within the covering region; a Ge layer that is crystal-grown in the open region; a buffer layer that is crystal-grown on the Ge layer and is a group 3-5 compound semiconductor layer containing P; and a functional layer that is crystal-grown on the buffer layer. The Ge layer may be formed by annealing with a temperature and duration that enables movement of crystal defects.

摘要翻译： 实现了使用具有良好热释放特性的廉价Si水的高质量GaAs型晶体薄膜。 提供了包括Si晶片的半导体晶片; 所述抑制层形成在所述晶片上并且抑制晶体生长，所述抑制层包括覆盖所述晶片的一部分的覆盖区域和不覆盖所述覆盖区域内的所述晶片的一部分的开放区域; 在开放区域晶体生长的Ge层; 在Ge层上晶体生长并且是含有P的3-5族化合物半导体层的缓冲层; 以及在缓冲层上晶体生长的功能层。 Ge层可以通过使得能够移动晶体缺陷的温度和持续时间退火而形成。

公开(公告)号：US20110006368A1

公开(公告)日：2011-01-13

申请号：US12920457

申请日：2009-02-27

申请人： Masahiko Hata ,  Tomoyuki Takada

发明人： Masahiko Hata ,  Tomoyuki Takada

IPC分类号： H01L29/786 ,  H01L29/30 ,  H01L21/20

CPC分类号： H01L21/845 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02439 ,  H01L21/0245 ,  H01L21/02521 ,  H01L21/02546 ,  H01L21/02639 ,  H01L21/02647 ,  H01L27/1211 ,  H01L29/78648 ,  H01L29/78681

摘要： The objective is to improve capabilities such as high-speed switching of a compound semiconductor device. Provided is a semiconductor wafer comprising a silicon wafer; an insulating film that is formed on the silicon wafer and that includes an open portion reaching the silicon wafer and having an aspect ratio of √3/3 or more; a seed compound semiconductor crystal that is formed in the open portion and that protrudes beyond a surface of the insulating film; and a laterally grown compound semiconductor layer that is laterally grown on the insulating film with a specified surface of the seed compound semiconductor crystal as a seed surface.

摘要翻译： 目的是提高复合半导体器件的高速切换等能力。 提供了包括硅晶片的半导体晶片; 形成在硅晶片上并且包括到达硅晶片的开口部分并且具有√3/ 3或更大的纵横比的绝缘膜; 种子化合物半导体晶体，其形成在所述开放部分中并且突出超过所述绝缘膜的表面; 横向生长的化合物半导体层，其以种子化合物半导体晶体的指定表面作为种子表面在绝缘膜上横向生长。