公开(公告)号：US20120009786A1

公开(公告)日：2012-01-12

申请号：US13178759

申请日：2011-07-08

申请人： Shigeru TAHARA ,  Eiichi Nishimura ,  Fumiko Yamashita ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Hisashi Okuchi ,  Mitsuhiro Omura

发明人： Shigeru TAHARA ,  Eiichi Nishimura ,  Fumiko Yamashita ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Hisashi Okuchi ,  Mitsuhiro Omura

IPC分类号： H01L21/3065

CPC分类号： H01L21/02071

摘要： A plasma processing method in which performing a plasma etching on metal layers formed on a substrate is conducted to form a pattern having the metal layers in a stacked structure, and then a deposit containing a metal that forms the metal layers and being deposited on a sidewall portion of the pattern is removed, the method includes: forming a protective layer by forming an oxide or chloride of the metal on sidewall portions of the metal layers; removing the deposit by applying a plasma of a gas containing fluorine atoms; and reducing the oxide or chloride of the metal by applying a plasma containing hydrogen after forming the protective layer and removing the deposit.

摘要翻译： 进行对形成在基板上的金属层进行等离子体蚀刻的等离子体处理方法，以形成具有层叠结构的金属层的图案，然后形成含有形成金属层并沉积在侧壁上的金属的沉积物 该方法包括：通过在金属层的侧壁部分上形成金属的氧化物或氯化物形成保护层; 通过施加含有氟原子的气体的等离子体来除去沉积物; 并通过在形成保护层之后施加包含氢的等离子体并除去沉积物来还原金属的氧化物或氯化物。

公开(公告)号：US20110269313A1

公开(公告)日：2011-11-03

申请号：US13069164

申请日：2011-03-22

申请人： Yoshihiro OGAWA ,  Shinsuke Kimura ,  Tatsuhiko Koide ,  Hisashi Okuchi ,  Hiroshi Tomita

发明人： Yoshihiro OGAWA ,  Shinsuke Kimura ,  Tatsuhiko Koide ,  Hisashi Okuchi ,  Hiroshi Tomita

IPC分类号： H01L21/3065

CPC分类号： H01L21/0206 ,  H01L21/0337 ,  H01L21/31133 ,  H01L21/67028 ,  H01L27/11531

摘要： In one embodiment, a method for treating a surface of a semiconductor substrate is disclosed. The semiconductor substrate has a first pattern covered by a resist and a second pattern not covered by the resist. The method includes supplying a resist-insoluble first chemical solution onto a semiconductor substrate to subject the second pattern to a chemical solution process. The method includes supplying a mixed liquid of a water repellency agent and a resist-soluble second chemical solution onto the semiconductor substrate after the supply of the first chemical solution, to form a water-repellent protective film on a surface of at least the second pattern and to release the resist. In addition, the method can rinse the semiconductor substrate using water after the formation of the water-repellent protective film, and dry the rinsed semiconductor substrate.

摘要翻译： 在一个实施例中，公开了一种用于处理半导体衬底的表面的方法。 半导体衬底具有由抗蚀剂覆盖的第一图案和未被抗蚀剂覆盖的第二图案。 该方法包括将抗蚀剂不溶的第一化学溶液提供到半导体衬底上以使第二图案进行化学溶液处理。 该方法包括：在供给第一化学溶液之后，在半导体衬底上提供防水剂和可溶解抗蚀剂的第二化学溶液的混合液体，在至少第二图案的表面上形成防水保护膜 并释放抗蚀剂。 此外，该方法可以在形成防水保护膜之后用水冲洗半导体衬底，并干燥冲洗后的半导体衬底。

公开(公告)号：US20100240219A1

公开(公告)日：2010-09-23

申请号：US12801178

申请日：2010-05-26

申请人： Hiroshi Tomita ,  Tatsuhiko Koide ,  Hisashi Okuchi ,  Kentaro Shimayama ,  Hiroyasu Iimori ,  Linan Ji

发明人： Hiroshi Tomita ,  Tatsuhiko Koide ,  Hisashi Okuchi ,  Kentaro Shimayama ,  Hiroyasu Iimori ,  Linan Ji

IPC分类号： H01L21/306

CPC分类号： H01L21/02057 ,  H01L21/0206 ,  H01L21/02071 ,  H01L21/02101 ,  H01L21/3086 ,  H01L21/31133 ,  H01L21/32139 ,  Y10S134/902 ,  Y10S438/906 ,  Y10S438/964

摘要： A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of the convex patterns, after forming the hydrophobic functional surface, rinsing the semiconductor substrate by using water, drying the semiconductor substrate, and removing the hydrophobic functional group from the hydrophobic functional surface of the convex patterns.

公开(公告)号：US07776756B1

公开(公告)日：2010-08-17

申请号：US11878965

申请日：2007-07-30

申请人： Hisashi Okuchi ,  Hiroyasu Iimori ,  Mami Saito ,  Yoshihiro Ogawa ,  Hiroshi Tomita ,  Soichi Nadahara

发明人： Hisashi Okuchi ,  Hiroyasu Iimori ,  Mami Saito ,  Yoshihiro Ogawa ,  Hiroshi Tomita ,  Soichi Nadahara

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/67253 ,  H01L21/31111 ,  H01L21/67086

摘要： An etching apparatus includes a chamber containing an etching solution including first and second components and water, a concentration of the water in the etching solution is at a specified level or lower; a circulation path circulating the etching solution; a concentration controller sampling the etching liquid from the circulation path and controls concentrations of the etching solution respectively; and a refilling chemical liquid feeder feeding a refilling chemical liquid including the first component having a concentration higher than the first component in the etching solution.

摘要翻译： 蚀刻装置包括：包含第一和第二成分和水的蚀刻液的室，蚀刻液中的水的浓度在规定的水平以下; 使蚀刻溶液循环的循环路径; 浓度控制器对来自循环路径的蚀刻液进行采样，并分别控制蚀刻液的浓度; 以及再填充化学液体给料器，其在所述蚀刻溶液中供给包含浓度高于所述第一成分的所述第一成分的再填充药液。

公开(公告)号：US20050230045A1

公开(公告)日：2005-10-20

申请号：US10922905

申请日：2004-08-23

申请人： Hisashi Okuchi ,  Hiroyasu Iimori ,  Mami Saito ,  Yoshihiro Ogawa ,  Hiroshi Tomita ,  Soichi Nadahara

发明人： Hisashi Okuchi ,  Hiroyasu Iimori ,  Mami Saito ,  Yoshihiro Ogawa ,  Hiroshi Tomita ,  Soichi Nadahara

IPC分类号： C23F1/08 ,  B44C1/22 ,  C23F1/00 ,  C23F1/16 ,  H01L21/00 ,  H01L21/306 ,  H01L21/311

CPC分类号： H01L21/67253 ,  H01L21/31111 ,  H01L21/67086

摘要： An etching apparatus includes a chamber containing an etching solution including first and second components and water, a concentration of the water in the etching solution is at a specified level or lower; a circulation path circulating the etching solution; a concentration controller sampling the etching liquid from the circulation path and controls concentrations of the etching solution respectively; and a refilling chemical liquid feeder feeding a refilling chemical liquid including the first component having a concentration higher than the first component in the etching solution.

摘要翻译： 蚀刻装置包括：包含第一和第二成分和水的蚀刻液的室，蚀刻液中的水的浓度在规定的水平以下; 使蚀刻溶液循环的循环路径; 浓度控制器对来自循环路径的蚀刻液进行采样，并分别控制蚀刻液的浓度; 以及再填充化学液体给料器，其在所述蚀刻溶液中供给包含浓度高于所述第一成分的所述第一成分的再填充药液。

公开(公告)号：US06492271B1

公开(公告)日：2002-12-10

申请号：US09609711

申请日：2000-06-30

申请人： Yoshihiro Uozumi ,  Hisashi Okuchi ,  Soichi Nadahara ,  Yoshihiro Ogawa ,  Hiroshi Tomita

发明人： Yoshihiro Uozumi ,  Hisashi Okuchi ,  Soichi Nadahara ,  Yoshihiro Ogawa ,  Hiroshi Tomita

IPC分类号： H01L21302

CPC分类号： H01L21/76865 ,  H01L21/32134 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76897

摘要： A titanium nitride film is selectively etched relative to a tungsten film by using as an etchant a solution containing hydrochloric acid and a hydrogen peroxide solution, the molar ratio of the hydrogen peroxide in the hydrogen peroxide solution to hydrogen chloride in the hydrochloric acid being 1/100 or less.

摘要翻译： 通过使用含有盐酸和过氧化氢溶液的溶液作为蚀刻剂，相对于钨膜选择性地蚀刻氮化钛膜，过氧化氢中的过氧化氢与盐酸中的氯化氢的摩尔比为1 / 100以下。

公开(公告)号：US08741168B2

公开(公告)日：2014-06-03

申请号：US13424904

申请日：2012-03-20

申请人： Yasuhito Yoshimizu ,  Hisashi Okuchi ,  Hiroshi Tomita

发明人： Yasuhito Yoshimizu ,  Hisashi Okuchi ,  Hiroshi Tomita

IPC分类号： C03C15/00

CPC分类号： H01L21/31111 ,  H01L21/31144

摘要： According to one embodiment, an etching method includes: supplying an etching-resistant material; and etching the silicon nitride film. The supplying includes supplying the etching-resistant material to a processing surface including a surface of a silicon nitride film and a surface of a non-etching film, the non-etching film including a material different from the silicon nitride film. The etching includes etching the silicon nitride film using an etchant in a state of the etching-resistant material being formed relatively more densely on the surface of the non-etching film than on the surface of the silicon nitride film.

摘要翻译： 根据一个实施例，蚀刻方法包括：提供耐蚀刻材料; 并蚀刻氮化硅膜。 供给包括将耐蚀刻材料供给到包括氮化硅膜的表面和非蚀刻膜的表面的处理表面，非蚀刻膜包括不同于氮化硅膜的材料。 蚀刻包括在耐腐蚀材料的状态下使用蚀刻剂在非蚀刻膜的表面上比在氮化硅膜的表面上相对更密集地形成的蚀刻氮化硅膜。

公开(公告)号：US08695145B2

公开(公告)日：2014-04-15

申请号：US13422771

申请日：2012-03-16

申请人： Yasuhito Yoshimizu ,  Hisashi Okuchi ,  Hiroshi Tomita

发明人： Yasuhito Yoshimizu ,  Hisashi Okuchi ,  Hiroshi Tomita

IPC分类号： B08B11/00 ,  H01L21/304

CPC分类号： A46B13/02 ,  A46B13/001 ,  A46B2200/30 ,  H01L21/67046 ,  H01L21/67754

摘要： Transferring plural semiconductor substrates under a state being held with predetermined intervals; holding the plural semiconductor substrates with roll brushes provided in plural pieces by each front side and back side of the plural semiconductor substrates, longitudinal directions of the roll brushes being oriented in parallel relative to the front side and the back side; and cleaning the plural semiconductor substrates by rotating the plural roll brushes.

摘要翻译： 在保持预定间隔的状态下转移多个半导体衬底; 通过多个半导体衬底的每个前侧和后侧保持多个具有多个片材的辊刷的半导体衬底，辊刷的纵向方向相对于前侧和后侧平行取向; 以及通过旋转所述多个辊刷来清洁所述多个半导体衬底。

公开(公告)号：US20130065400A1

公开(公告)日：2013-03-14

申请号：US13424904

申请日：2012-03-20

申请人： Yasuhito Yoshimizu ,  Hisashi Okuchi ,  Hiroshi Tomita

发明人： Yasuhito Yoshimizu ,  Hisashi Okuchi ,  Hiroshi Tomita

IPC分类号： H01L21/306

CPC分类号： H01L21/31111 ,  H01L21/31144

摘要： According to one embodiment, an etching method includes: supplying an etching-resistant material; and etching the silicon nitride film. The supplying includes supplying the etching-resistant material to a processing surface including a surface of a silicon nitride film and a surface of a non-etching film, the non-etching film including a material different from the silicon nitride film. The etching includes etching the silicon nitride film using an etchant in a state of the etching-resistant material being formed relatively more densely on the surface of the non-etching film than on the surface of the silicon nitride film.

摘要翻译： 根据一个实施例，蚀刻方法包括：提供耐蚀刻材料; 并蚀刻氮化硅膜。 供给包括将耐蚀刻材料供给到包括氮化硅膜的表面和非蚀刻膜的表面的处理表面，非蚀刻膜包括不同于氮化硅膜的材料。 蚀刻包括在耐腐蚀材料的状态下使用蚀刻剂在非蚀刻膜的表面上比在氮化硅膜的表面上相对更密集地形成的蚀刻氮化硅膜。

公开(公告)号：US20110143545A1

公开(公告)日：2011-06-16

申请号：US12879097

申请日：2010-09-10

申请人： Hisashi OKUCHI ,  Tatsuhiko Koide ,  Shinsuke Kimura ,  Yoshihiro Ogawa ,  Hiroshi Tomita

发明人： Hisashi OKUCHI ,  Tatsuhiko Koide ,  Shinsuke Kimura ,  Yoshihiro Ogawa ,  Hiroshi Tomita

IPC分类号： H01L21/306 ,  B08B3/00

CPC分类号： H01L21/02057 ,  H01L21/67017 ,  H01L21/67028 ,  H01L21/67051

摘要： In one embodiment, an apparatus of treating a surface of a semiconductor substrate comprises a substrate holding and rotating unit which holds a semiconductor substrate with a surface having a convex pattern formed thereon and rotates the semiconductor substrate, a first supply unit which supplies a chemical and/or pure water to the surface of the semiconductor substrate, and a second supply unit which supplies a diluted water repellent to the surface of the semiconductor substrate to form a water-repellent protective film on the surface of the convex pattern. The second supply unit comprises a buffer tank which stores the water repellent, a first supply line which supplies a purge gas to the buffer tank, a second supply line which supplies a diluent, a pump which sends off the water repellent within the buffer tank, a third supply line which supplies the water repellent sent off from the pump, and a mixing valve which mixes the diluent and the water repellent to produce the diluted water repellent.

摘要翻译： 在一个实施例中，处理半导体衬底的表面的设备包括：衬底保持和旋转单元，其保持具有形成在其上的凸起图案的表面的半导体衬底，并使半导体衬底旋转，提供化学品的第一供应单元和 /或纯水，以及第二供给单元，其向半导体基板的表面供给稀释斥水剂，以在凸形图案的表面上形成防水保护膜。 第二供应单元包括缓冲罐，其存储防水剂，向缓冲罐供应净化气体的第一供应管线，供应稀释剂的第二供应管线，在缓冲罐内排出拒水剂的泵， 供给从泵送出的防水剂的第三供给管路和将稀释剂与防水剂混合而制成稀释斥水剂的混合阀。