利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

62 条记录 (耗时 0.039 秒)

    LAMP
    41.
    发明申请
    LAMP 有权
    灯

    公开(公告)号：US20140152177A1

    公开(公告)日：2014-06-05

    申请号：US14234187

    申请日：2012-02-03

    申请人： Tsugihiro Matsuda ,  Nobuyoshi Takeuchi ,  Yoshinori Kakuno ,  Masahiro Miki ,  Hideo Nagai ,  Takaari Uemoto

    发明人： Tsugihiro Matsuda ,  Nobuyoshi Takeuchi ,  Yoshinori Kakuno ,  Masahiro Miki ,  Hideo Nagai ,  Takaari Uemoto

    IPC分类号： F21K99/00

    CPC分类号： F21K9/1355 ,  F21K9/23 ,  F21K9/232 ,  F21K9/238 ,  F21K9/90 ,  F21V19/003 ,  F21V23/006 ,  F21V29/15 ,  F21V29/507 ,  F21Y2115/10

    摘要： In a lamp: an LED module and a circuit unit for lighting are housed within an envelope composed of a globe and a case; the LED module is attached to an end of an extension member that extends from a mount, which closes an opening at one end of the case, into the globe; the circuit unit is mounted inside the case; an insulation member disposed inside the case ensures insulation between the mount, which is made of metal, and the circuit unit; the insulation member has a bottomed cylinder portion inserted into the mount, and a protrusion portion formed on an outer circumference of the based cylinder portion that protrudes toward an inner surface of the mount; and the insulation member is attached to the mount by the protrusion portion pressing against the inner surface of the mount.

    摘要翻译： 在灯中：用于照明的LED模块和电路单元容纳在由球体和壳体组成的信封内; LED模块附接到延伸构件的端部，该延伸构件从将壳体的一端封闭开口的安装件延伸到球体中; 电路单元安装在壳体内; 设置在壳体内的绝缘构件确保由金属制成的安装座与电路单元之间的绝缘; 所述绝缘构件具有插入所述安装件中的有底圆筒部分，以及形成在所述基座筒部的外周上朝向所述安装件的内表面突出的突出部分; 并且所述绝缘构件通过所述突出部分抵靠所述安装件的内表面附接到所述安装件。

    Dimmable metal halide lamp and lighting method
    46.
    发明授权
    Dimmable metal halide lamp and lighting method 有权
    可调光金属卤化物灯及照明方式

    公开(公告)号：US07138766B2

    公开(公告)日：2006-11-21

    申请号：US10918636

    申请日：2004-08-13

    申请人： Nobuyoshi Takeuchi ,  Takashi Maniwa ,  Yoshiharu Nishiura

    发明人： Nobuyoshi Takeuchi ,  Takashi Maniwa ,  Yoshiharu Nishiura

    IPC分类号： H01J61/12

    CPC分类号： H01J61/827 ,  H01J61/125

    摘要： A metal halide lamp in which an arc tube is housed within a bulb having a base at one end thereof. The arc tube includes a main tube, two thin tubes that extend one from each end of the main tube, and a pair of electrode inductors. The main tube and the thin tubes are made from translucent polycrystalline alumina and constitute a discharge vessel having a discharge space therein. Lamp power under dimming conditions is set in a range defined by maximum lamp power Wmax [W] and minimum lamp power Wmin [W], with a surface area S [cm2] of the inner surface of the discharge vessel satisfying Wmax/60≦S≦Wmin/20.

    摘要翻译： 一种金属卤化物灯，其中电弧管容纳在其一端具有底座的灯泡内。 电弧管包括主管，从主管的每个端部延伸的两个细管和一对电极电感器。 主管和细管由半透明多晶氧化铝制成，并构成其中具有放电空间的放电容器。 调光条件下的灯泡功率设置在由最大灯功率Wmax [W]和最小灯功率Wmin [W]限定的范围内，其表面积S [cm 2] <！ - SIPO

    Dimmable metal halide lamp and lighting method
    47.
    发明申请
    Dimmable metal halide lamp and lighting method 有权
    可调光金属卤化物灯及照明方式

    公开(公告)号：US20050073257A1

    公开(公告)日：2005-04-07

    申请号：US10918636

    申请日：2004-08-13

    申请人： Nobuyoshi Takeuchi ,  Takashi Maniwa ,  Yoshiharu Nishiura

    发明人： Nobuyoshi Takeuchi ,  Takashi Maniwa ,  Yoshiharu Nishiura

    IPC分类号： H01J61/20 ,  H01J61/12 ,  H01J61/82 ,  H01J61/88 ,  H01J17/16 ,  H01J61/30

    CPC分类号： H01J61/827 ,  H01J61/125

    摘要： A metal halide lamp in which an arc tube is housed within a bulb having a base at one end thereof. The arc tube includes a main tube, two thin tubes that extend one from each end of the main tube, and a pair of electrode inductors. The main tube and the thin tubes are made from translucent polycrystalline alumina and constitute a discharge vessel having a discharge space therein. Lamp power under dimming conditions is set in a range defined by maximum lamp power Wmax [W] and minimum lamp power Wmin [W], with a surface area S [cm2] of the inner surface of the discharge vessel satisfying Wmax/60≦S≦Wmin/20.

    摘要翻译： 一种金属卤化物灯，其中电弧管容纳在其一端具有底座的灯泡内。 电弧管包括主管，从主管的每个端部延伸的两个细管和一对电极电感器。 主管和细管由半透明多晶氧化铝制成，并构成其中具有放电空间的放电容器。 调光条件下的灯泡功率设定在由最大灯功率Wmax [W]和最小灯功率Wmin [W]限定的范围内，放电容器内表面的表面积S [cm 2]满足Wmax / 60 <= S <= Wmin / 20。

    Mask ROM device with gate insulation film based in pad oxide film and/or nitride film
    49.
    发明授权
    Mask ROM device with gate insulation film based in pad oxide film and/or nitride film 失效
    具有基于衬垫氧化膜和/或氮化物膜的栅极绝缘膜的掩模ROM器件

    公开(公告)号：US5815433A

    公开(公告)日：1998-09-29

    申请号：US572901

    申请日：1995-12-22

    申请人： Nobuyoshi Takeuchi

    发明人： Nobuyoshi Takeuchi

    IPC分类号： G11C11/00 ,  H01L21/8247 ,  H01L27/105 ,  G11C11/34 ,  H01L27/02

    CPC分类号： H01L27/11526 ,  G11C11/005 ,  H01L27/105 ,  H01L27/11546

    摘要： A cell portion 10 of a MOS structure and a redundant cell portion 12 of an MNOS structure are formed in a single semiconductor substrate. These MOS and MNOS structures commonly include an oxide film 26. A laminate structure consisting of a silicon nitride film and a pad oxide film and used in the element separation step is included in the redundant cell portion 12. Therefore, the redundant circuit can be naturally formed without increasing the number of process steps, leading to a high yield without inviting an increase in the manufacturing cost.

    摘要翻译： 在单个半导体衬底中形成MOS结构的单元部分10和MNOS结构的冗余单元部分12。 这些MOS和MNOS结构通常包括氧化物膜26.由冗余电池单元部分12包括由元件分离步骤中使用的氮化硅膜和衬垫氧化膜构成的叠层结构。因此，冗余电路可以是自然的 在不增加工艺步骤的数量的情况下形成，导致高产率而不会增加制造成本。

    Non-volatile semiconductor memory device and method of fabricating thereof
    50.
    发明授权
    Non-volatile semiconductor memory device and method of fabricating thereof 失效
    非挥发性半导体存储器件及其制造方法

    公开(公告)号：US5793078A

    公开(公告)日：1998-08-11

    申请号：US859775

    申请日：1997-05-21

    申请人： Nobuyoshi Takeuchi

    发明人： Nobuyoshi Takeuchi

    IPC分类号： H01L21/8247 ,  H01L27/115 ,  H01L29/423 ,  H01L29/788 ,  H01L29/792 ,  H01L29/76

    CPC分类号： H01L27/11517 ,  H01L27/115 ,  H01L29/42324

    摘要： According to the present invention, there is provided a non-volatile semiconductor memory device including a memory cell array in which a plurality of memory cells are arranged, wherein the memory cells contain two or more types of memory cells, which differs in gate couple ratio. Each memory cell includes source-drain regions provided apart from each other in a semiconductor substrate having a conductivity type, the source-drain regions having a conductivity type opposite to that of the semiconductor substrate, a floating gate provided above a channel region formed between the source-drain regions, and a control gate provided above a surface of the floating gate, and the memory cells contain two or more types of memory cells, which differ in relation to an area of a region in which the floating gate and the control gate overlap. The memory cells having a low gate couple ratio exhibit characteristics similar to those of a mask ROM, which gives priority to reading, whereas the memory cells having a high gate couple ratio, exhibit excellent programming and erasing characteristics.

    摘要翻译： 根据本发明，提供了一种非易失性半导体存储器件，包括其中布置有多个存储单元的存储单元阵列，其中存储单元包含两种或更多种类型的存储单元，其门对偶比不同 。 每个存储单元包括在具有导电类型的半导体衬底中彼此分开设置的源极 - 漏极区域，源极 - 漏极区域具有与半导体衬底的导电类型相反的导电类型，浮置栅极设置在形成在 源极 - 漏极区域和设置在浮置栅极的表面上方的控制栅极，并且存储器单元包含两个或更多种类型的存储器单元，其相对于浮动栅极和控制栅极的区域的区域而不同 交叠。 具有低栅极耦合比的存储单元表现出与掩盖ROM相似的特性，其优先于读取，而具有高栅极耦合比的存储单元表现出优异的编程和擦除特性。