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157 条记录 (耗时 0.053 秒)

    MOSFET threshold voltage tuning with metal gate stack control
    42.
    发明授权
    MOSFET threshold voltage tuning with metal gate stack control 有权
    MOSFET栅极电压调谐采用金属栅极堆栈控制

    公开(公告)号：US06861712B2

    公开(公告)日：2005-03-01

    申请号：US10345744

    申请日：2003-01-15

    申请人： Wei Gao ,  Yoshi Ono

    发明人： Wei Gao ,  Yoshi Ono

    IPC分类号： H01L29/423 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/49 ,  H01L29/78 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

    CPC分类号： H01L29/4958 ,  H01L21/28079 ,  H01L21/823842

    摘要： A stacked metal gate MOSFET and fabrication method are provided. The method comprises: forming a gate oxide layer overlying a channel region; forming a first metal layer having a first thickness overlying the gate oxide layer; forming a second metal layer having a second thickness overlying the first metal layer; and, establishing a gate work function in response to the combination of the first and second thicknesses. In one example, the first metal layer has a thickness of less than about 1.5 nanometers (nm) the second metal layer has a thickness greater than about 10 nm. Then, establishing a gate work function includes establishing a gate work function substantially in response to the second metal second thickness. Alternately, the first metal thickness is greater than about 20 nm. Then, the gate work function is established substantially in response to the first metal thickness.

    摘要翻译： 提供堆叠金属栅极MOSFET及其制造方法。 该方法包括：形成覆盖沟道区的栅氧化层; 形成具有覆盖所述栅极氧化物层的第一厚度的第一金属层; 形成具有覆盖在第一金属层上的第二厚度的第二金属层; 并且响应于第一和第二厚度的组合建立门功函数。 在一个示例中，第一金属层具有小于约1.5纳米（nm）的厚度，第二金属层具有大于约10nm的厚度。 然后，建立闸门功能包括基本上响应于第二金属第二厚度建立门功函数。 或者，第一金属厚度大于约20nm。 然后，基本上响应于第一金属厚度建立浇口功函数。

    Eyewear retainer
    43.
    外观设计
    Eyewear retainer 有权

    公开(公告)号：USD1000509S1

    公开(公告)日：2023-10-03

    申请号：US29856333

    申请日：2022-10-13

    申请人： Wei Gao

    设计人： Wei Gao

    摘要： FIG. 1 is a front perspective view of an eyewear retainer, showing my new design;
    FIG. 2 is a rear perspective view thereof;
    FIG. 3 is a front elevation view thereof;
    FIG. 4 is a rear elevation view thereof;
    FIG. 5 is a top plan view thereof; and,
    FIG. 6 is a bottom plan view thereof.
    The broken lines in the figures are for the purposes of illustrating portions of the eyewear retainer, which form no part of the claimed design.
    The article is shown with a symbolic break in its length. The appearance of any portion of the article between the break lines forms no part of the claimed design.

    Detect method for step dimming selection
    49.
    发明授权
    Detect method for step dimming selection 有权
    用于步进调光选择的检测方法

    公开(公告)号：US08836238B2

    公开(公告)日：2014-09-16

    申请号：US12667047

    申请日：2008-06-12

    申请人： Wei Gao ,  Markus Heckmann ,  Rene Twardzik ,  Yanshun Xue

    发明人： Wei Gao ,  Markus Heckmann ,  Rene Twardzik ,  Yanshun Xue

    IPC分类号： H05B37/02 ,  H05B41/298

    CPC分类号： H05B41/2985

    摘要： A detect method is provided for performing step dimming selection in an electronic ballast including an End of Lamp Life detect circuit and a half-bridge inverter, the End of Lamp Life detect circuit being connected to an input terminal of the control circuit, wherein each time when the power switch is turned on, it is judged whether the electronic ballast should enter the dimming mode or not by detecting the voltage at the input terminal of the control circuit before the half-bridge inverter starts operating.

    摘要翻译： 提供了一种检测方法，用于在包括灯寿命检测电路和半桥逆变器的电子镇流器中执行步进调光选择，灯寿命检测电路连接到控制电路的输入端，其中每次 当电源开关打开时，通过在半桥逆变器开始运行之前检测控制电路输入端的电压，判断电子镇流器是否进入调光模式。