Lens barrel with built-in blur correction mechanism
    41.
    发明授权
    Lens barrel with built-in blur correction mechanism 失效
    镜筒内置模糊校正机构

    公开(公告)号:US06701071B2

    公开(公告)日:2004-03-02

    申请号:US09756264

    申请日:2001-01-09

    IPC分类号: G03B500

    摘要: A lens-driver for driving a lens for compensating image blur caused by camera shaking has two driving-levers. In each driving-lever, one end is rotatably connected to a lens frame via a holding shaft and the other end is rotatably supported by a rotation shaft. Two driving levers are arranged generally on one straight line, and there is formed a generally perpendicular angle by a line connecting the holding shaft of one driving-lever and an optical center of the lens, and a line connecting the holding shaft of the other driving-lever and the optical center. Another lens-driver has two driving mechanisms. One driving mechanism drives the lens, and the other driving mechanism drives a shutter mechanism or an aperture mechanism. In the lens barrel, one mechanism occupies one half area and the other mechanism occupies the other half area.

    摘要翻译: 用于驱动用于补偿由相机抖动引起的图像模糊的透镜的镜头驱动器具有两个驱动杆。 在每个驱动杆中,一端通过保持轴可旋转地连接到透镜框,另一端由旋转轴可旋转地支撑。 两个驱动杆一般在一条直线上布置,并且通过连接一个驱动杆的保持轴和透镜的光学中心的线形成大致垂直的角度,以及连接另一个驱动的保持轴的线 -lever和光学中心。 另一个镜头驱动器有两个驱动机构。 一个驱动机构驱动透镜,另一个驱动机构驱动快门机构或光圈机构。 在镜筒中,一个机构占据一半区域,另一个机构占据另一半区域。

    Method for reclaiming wafer substrate and polishing solution compositions therefor
    42.
    发明授权
    Method for reclaiming wafer substrate and polishing solution compositions therefor 有权
    回收晶片基板的方法及其研磨液组成

    公开(公告)号:US06451696B1

    公开(公告)日:2002-09-17

    申请号:US09384725

    申请日:1999-08-27

    IPC分类号: H01L21302

    CPC分类号: H01L21/02032

    摘要: A method for reclaiming a wafer substrate material having a metallic film and a dielectric film includes a step for removing the entire metallic film and a part of the dielectric film with a chemical etching agent so as not to substantially dissolve the wafer substrate material itself, a step for removing the residual dielectric layer and the degenerated zone beneath the surface of the substrate by chemical-mechanical polishing, and a step for polishing at least one surface of the substrate.

    摘要翻译: 用于回收具有金属膜和电介质膜的晶片衬底材料的方法包括用化学蚀刻剂去除整个金属膜和一部分电介质膜以便基本上不溶解晶片衬底材料本身的步骤, 用于通过化学机械抛光去除基底表面下面的残余介电层和退化区的步骤,以及用于抛光基底的至少一个表面的步骤。

    Apparatus capable of correcting object image displacement
    43.
    发明授权
    Apparatus capable of correcting object image displacement 有权
    能够校正物体图像位移的装置

    公开(公告)号:US6122449A

    公开(公告)日:2000-09-19

    申请号:US221354

    申请日:1998-12-28

    摘要: An optical apparatus is provided with a detector for detecting a shake of the apparatus relative to an object at a predetermined interval, a corrector for correcting a shake of the apparatus based on a detection result of the detector, a driver for driving the corrector, a calculator for calculating an estimative shake at a predetermined point of time in a next interval based on a detection result of the detector, and a controller for controlling the driver based on a calculation result of the calculator to drive the corrector to effect correction for the shake at the predetermined point of time in the next interval.

    摘要翻译: 光学装置设置有用于以预定间隔检测装置相对于物体的抖动的检测器,用于基于检测器的检测结果来校正装置的抖动的校正器,用于驱动校正器的驱动器, 计算器,用于基于检测器的检测结果在下一个间隔中的预定时间点计算估计抖动;以及控制器,用于基于计算器的计算结果来控制驱动器,以驱动校正器来进行抖动校正 在下一个间隔的预定时间点。

    Camera capable of shake correction
    44.
    发明授权
    Camera capable of shake correction 有权
    相机能够进行抖动校正

    公开(公告)号:US06044228A

    公开(公告)日:2000-03-28

    申请号:US150457

    申请日:1998-09-09

    IPC分类号: G03B5/00 G03B7/093 G03B17/00

    摘要: A camera capable of shake correction, and is provided with: a sensor for sensing a light image of an object to detect a camera shake; an exposure time setter for setting a first exposure time based on a brightness of an object and a second exposure time smaller than the first exposure time; and a controller for judging as to whether the shake correction is disable, and controlling exposure with reference to the second exposure time when the shake correction is judged to be disable.

    摘要翻译: 一种能够进行抖动校正的相机,并且具有:用于感测物体的光图像以检测相机抖动的传感器; 曝光时间设定器,用于基于物体的亮度设定第一曝光时间,第二曝光时间小于第一曝光时间; 以及控制器,用于判断抖动校正是否禁用,并且当判断为抖动校正被禁用时,参考第二曝光时间来控制曝光。

    Programmable electronic sewing machine
    45.
    发明授权
    Programmable electronic sewing machine 失效
    可编程电子缝纫机

    公开(公告)号:US6024037A

    公开(公告)日:2000-02-15

    申请号:US84214

    申请日:1998-05-26

    IPC分类号: D05B19/08 D05C5/06

    CPC分类号: D05B19/085

    摘要: A programmable electronic sewing machine includes input means for supplying input data when operated by a user, and sewing program composing means for composing a sewing program for the sewing machine on the basis of the input data supplied from the input means. The sewing program composing means composes the same sewing program on the basis of the input data supplied from the input means when the input means is operated in two or more different operating procedures.

    摘要翻译: 可编程电子缝纫机包括用于在用户操作时提供输入数据的输入装置和用于根据从输入装置提供的输入数据构成缝纫机缝纫程序的缝制程序组合装置。 当输入装置在两个或多个不同的操作过程中操作时,缝制程序组合装置基于从输入装置提供的输入数据构成相同的缝制程序。

    Method of manufacturing a semiconductor light-emitting device
    46.
    发明授权
    Method of manufacturing a semiconductor light-emitting device 失效
    制造半导体发光装置的方法

    公开(公告)号:US5923950A

    公开(公告)日:1999-07-13

    申请号:US872154

    申请日:1997-06-10

    摘要: A method for manufacturing a semiconductor is disclosed. The method involves soaking a semiconductor substrate that consists of SiC for ten minutes in a buffered hydrofluoric acid, thereby etching the oxidized film formed on the surface of the semiconductor substrate. Then, TMA, NH.sub.3, TMG, and hydrogen for carrier are supplied at the rates of 10 .mu.mol/min., 2.5 L/min., and 2 L/min., respectively, to the semiconductor substrate at a temperature of 1090.degree. C. by using MOVPE. A buffer layer that consists of a single crystal AlN and has a thickness of about 15 nm is grown on the main surface of the semiconductor substrate. After lowering the temperature to 800.degree. C., TMA, TMG, TMI, and NH.sub.3 are supplied at the rates of 0.2 .mu.mol/min., 2 .mu.mol/min., 20 .mu.mol/min., and 5 L/min., respectively. A single crystal layer which consists of AlGaInN is thus grown on the buffer layer.

    摘要翻译: 公开了半导体制造方法。 该方法包括将由SiC组成的半导体衬底浸入缓冲的氢氟酸中10分钟,从而蚀刻形成在半导体衬底的表面上的氧化膜。 然后,在1090℃的温度下分别以10微摩尔/分钟,2.5L /分和2L /分钟的速度向载体提供TMA,NH 3,TMG和氢气。 C.使用MOVPE。 在半导体衬底的主表面上生长由单晶AlN构成并具有约15nm的厚度的缓冲层。 将温度降至800℃后,以0.2微摩尔/分钟,2微摩尔/分钟,20微摩尔/分钟和5升/分钟的速率供给TMA,TMG,TMI和NH 3 。, 分别。 因此,由AlGaInN构成的单晶层在缓冲层上生长。

    Polishing fluid composition and polishing method
    47.
    发明授权
    Polishing fluid composition and polishing method 失效
    抛光液组成和抛光方法

    公开(公告)号:US5885334A

    公开(公告)日:1999-03-23

    申请号:US857366

    申请日:1997-05-15

    IPC分类号: C09G1/02 C09K3/14 C09K13/04

    CPC分类号: C09G1/02 C09K3/1463

    摘要: The present invention provides a polishing fluid composition which can effectively polish a surface of a semiconductor silicon wafer or a surface of a film comprising silicon to be formed on silicon wafers with a markedly reduced amount of colloidal silica to be used as abrasives, or a polishing fluid composition which is particularly useful for a polishing step after removal of an oxide layer in a two-step polishing method. The former polishing fluid composition comprises an alkaline suspension which contains a water-soluble silicic acid component, colloidal silica and an alkaline component, and which has a pH value of 8.5 to 13. Meanwhile, the latter polishing fluid composition comprises an alkaline solution which contains a water-soluble silicic acid component and an alkaline component, and which has a pH value of 8.5 to 13; and is substantially free of abrasive particles.

    摘要翻译: 本发明提供了一种抛光液组合物,其可以有效地抛光半导体硅晶片的表面或包含待形成硅晶片的表面,其中硅晶片的显微减少量用作研磨剂,或抛光 流体组合物,其特别可用于在两步抛光方法中除去氧化物层之后的抛光步骤。 前述抛光液组合物含有含有水溶性硅酸成分,胶体二氧化硅和碱性成分的碱性悬浮液,其pH值为8.5〜13。另外,后者的研磨液组合物含有碱溶液,其含有 水溶性硅酸成分和碱性成分,pH值为8.5〜13, 并且基本上不含磨料颗粒。

    Process for recovering substrates
    48.
    发明授权
    Process for recovering substrates 失效
    回收底物的方法

    公开(公告)号:US5855735A

    公开(公告)日:1999-01-05

    申请号:US538265

    申请日:1995-10-03

    摘要: A process comprising removing surface layer materials from the wafer by inducing micro-fractures in the surface using a rotating pad and an abrasive slurry until all of the surface layer materials are removed; and chemically etching the surfaces of the wafer until all micro-fractures are removed therefrom. Edge materials are removed by abrasive tape. Wafer thickness reduction during recycling is less than 30 microns per cycle. One of the front and back surfaces of the wafer substrate is polished, any dots or grooves being on the non-polished side. The abrasive slurry contains more than 6 volume percent abrasive particles, and the abrasive slurry has a viscosity greater than about 2 cP at ambient temperature. The preferred pad comprises an organic polymer having a hardness greater than about 40 on the Shore D scale, optimally a polyurethane. The pressure of the pad against the wafer surface preferably does not exceed about 3 psi. Preferably, the chemical etching solution contains potassium hydroxide. An acidic solution can then be applied to the wafer surface. The reclaimed semiconductor wafer can be a silicon wafer having a matted side having etch pits which does not exceed 20 microns in width, an average roughness not exceeding 0.5 microns and a peak-to-valley roughness not exceeding 5 microns. Any laser markings from the original wafer are present on the matted side of the wafer.

    摘要翻译: 一种方法,其包括通过使用旋转垫和研磨​​剂浆料在表面中诱导微裂纹从晶片去除表面层材料,直到除去所有表面层材料; 并化学蚀刻晶片的表面,直到从中除去所有的微裂缝。 边缘材料由砂带除去。 回收期间的晶片厚度减少每周期小于30微米。 对晶片基板的正面和背面之一进行抛光,任何点或凹槽位于非抛光侧。 研磨浆料含有超过6体积%的磨料颗粒,研磨浆料在环境温度下的粘度大于约2cP。 优选的垫包括在肖氏D刻度上硬度大于约40的有机聚合物,最佳地是聚氨酯。 衬垫对晶片表面的压力优选不超过约3psi。 优选地,化学蚀刻溶液含有氢氧化钾。 然后可以将酸性溶液施加到晶片表面。 回收的半导体晶片可以是具有无光泽面的蚀刻凹坑的硅晶片,其宽度不超过20微米,平均粗糙度不超过0.5微米,峰 - 谷粗糙度不超过5微米。 来自原始晶片的任何激光标记存在于晶片的无光泽侧。

    Photographic camera system
    49.
    发明授权
    Photographic camera system 失效
    照相机系统

    公开(公告)号:US5196880A

    公开(公告)日:1993-03-23

    申请号:US593980

    申请日:1990-10-09

    IPC分类号: G02B7/10

    CPC分类号: G02B7/102

    摘要: A camera system which comprises a photo-taking lens assembly of varifocal type including a zooming lens and a focusing lens; a manipulatable member; a zooming drive device for driving the zooming lens during a manipulation of the manipulatable member; a focusing device for driving the focusing lens; a focal length detector for sequentially detecting a current focal length of the photo-taking lens assembly; a zooming amount calculator operable to repeatedly add or subtract a predetermined amount to or from the current focal length during the manipulation of the manipulatable member thereby to sequentially update a target focal length used as a reference for the drive of the zooming lens; a first control adapted to receive the target focal length updated by the zooming amount calculator for calculating the amount of deviation in focus which would occur before the target focal length is attained and also for controlling the focusing device so as to eliminate the amount of deviation in focus which has been calculated; and a second control for controlling the zooming drive device, when the manipulation of the manipulatable member is released, so as to drive the zooming lens to a position where the target focal length calculated by the zooming amount calculator is attained.

    摘要翻译: 一种照相机系统,包括变焦镜头类型的摄影镜头组件,包括变焦镜头和聚焦透镜; 一个可操纵的成员; 用于在可操纵构件的操纵期间驱动变焦镜头的变焦驱动装置; 用于驱动聚焦透镜的聚焦装置; 用于顺序地检测所述摄影镜头组件的当前焦距的焦距检测器; 变焦量计算器,其可操作以在操纵可操纵构件期间反复地向或从当前焦距增加或减去预定量,从而顺序地更新用作变焦透镜驱动的基准的目标焦距; 适于接收由变焦量计算器更新的目标焦距的第一控制器,用于计算在达到目标焦距之前将发生的焦点偏离量,并且还用于控制聚焦装置,以消除偏转量 已计算的重点; 以及第二控制,用于当解除可操纵构件的操纵时,控制变焦驱动装置,以便将变焦透镜驱动到达到由变焦量计算器计算的目标焦距的位置。