Phosphorescent phosphor and method of manufacturing thereof
    44.
    发明申请
    Phosphorescent phosphor and method of manufacturing thereof 有权
    磷光体荧光体及其制造方法

    公开(公告)号:US20070096058A1

    公开(公告)日:2007-05-03

    申请号:US10551424

    申请日:2004-11-05

    IPC分类号: C09K11/77

    CPC分类号: C09K11/7792

    摘要: A phosphorescent phosphor having excellent afterglow luminance characteristics, even under low illumination intensity of radiation conditions, compared to conventional strontium aluminate phosphorescent phosphors of the same type, and particularly a phosphorescent phosphor having excellent initial afterglow luminance characteristics and excellent afterglow luminance characteristics at 60 and 90 minutes after cessation of the excitation, with following requirements: 0.015

    摘要翻译: 与常规的相同类型的锶铝酸盐磷光体磷光体相比,即使在低辐射条件的照明强度下,具有优异的余辉亮度特性的磷光体荧光体,特别是具有优异的初始余辉亮度特性和优异的余辉辉度特性的磷光体荧光体在60和90° 激发停止后的几分钟,具有以下要求:0.015

    Dimmable metal halide lamp and lighting method
    45.
    发明授权
    Dimmable metal halide lamp and lighting method 有权
    可调光金属卤化物灯及照明方式

    公开(公告)号:US07138766B2

    公开(公告)日:2006-11-21

    申请号:US10918636

    申请日:2004-08-13

    IPC分类号: H01J61/12

    CPC分类号: H01J61/827 H01J61/125

    摘要: A metal halide lamp in which an arc tube is housed within a bulb having a base at one end thereof. The arc tube includes a main tube, two thin tubes that extend one from each end of the main tube, and a pair of electrode inductors. The main tube and the thin tubes are made from translucent polycrystalline alumina and constitute a discharge vessel having a discharge space therein. Lamp power under dimming conditions is set in a range defined by maximum lamp power Wmax [W] and minimum lamp power Wmin [W], with a surface area S [cm2] of the inner surface of the discharge vessel satisfying Wmax/60≦S≦Wmin/20.

    摘要翻译: 一种金属卤化物灯,其中电弧管容纳在其一端具有底座的灯泡内。 电弧管包括主管,从主管的每个端部延伸的两个细管和一对电极电感器。 主管和细管由半透明多晶氧化铝制成,并构成其中具有放电空间的放电容器。 调光条件下的灯泡功率设置在由最大灯功率Wmax [W]和最小灯功率Wmin [W]限定的范围内,其表面积S [cm 2] <! - SIPO

    Dimmable metal halide lamp and lighting method
    46.
    发明申请
    Dimmable metal halide lamp and lighting method 有权
    可调光金属卤化物灯及照明方式

    公开(公告)号:US20050073257A1

    公开(公告)日:2005-04-07

    申请号:US10918636

    申请日:2004-08-13

    CPC分类号: H01J61/827 H01J61/125

    摘要: A metal halide lamp in which an arc tube is housed within a bulb having a base at one end thereof. The arc tube includes a main tube, two thin tubes that extend one from each end of the main tube, and a pair of electrode inductors. The main tube and the thin tubes are made from translucent polycrystalline alumina and constitute a discharge vessel having a discharge space therein. Lamp power under dimming conditions is set in a range defined by maximum lamp power Wmax [W] and minimum lamp power Wmin [W], with a surface area S [cm2] of the inner surface of the discharge vessel satisfying Wmax/60≦S≦Wmin/20.

    摘要翻译: 一种金属卤化物灯,其中电弧管容纳在其一端具有底座的灯泡内。 电弧管包括主管,从主管的每个端部延伸的两个细管和一对电极电感器。 主管和细管由半透明多晶氧化铝制成,并构成其中具有放电空间的放电容器。 调光条件下的灯泡功率设定在由最大灯功率Wmax [W]和最小灯功率Wmin [W]限定的范围内,放电容器内表面的表面积S [cm 2]满足Wmax / 60 <= S <= Wmin / 20。

    Mask ROM device with gate insulation film based in pad oxide film and/or
nitride film
    48.
    发明授权
    Mask ROM device with gate insulation film based in pad oxide film and/or nitride film 失效
    具有基于衬垫氧化膜和/或氮化物膜的栅极绝缘膜的掩模ROM器件

    公开(公告)号:US5815433A

    公开(公告)日:1998-09-29

    申请号:US572901

    申请日:1995-12-22

    摘要: A cell portion 10 of a MOS structure and a redundant cell portion 12 of an MNOS structure are formed in a single semiconductor substrate. These MOS and MNOS structures commonly include an oxide film 26. A laminate structure consisting of a silicon nitride film and a pad oxide film and used in the element separation step is included in the redundant cell portion 12. Therefore, the redundant circuit can be naturally formed without increasing the number of process steps, leading to a high yield without inviting an increase in the manufacturing cost.

    摘要翻译: 在单个半导体衬底中形成MOS结构的单元部分10和MNOS结构的冗余单元部分12。 这些MOS和MNOS结构通常包括氧化物膜26.由冗余电池单元部分12包括由元件分离步骤中使用的氮化硅膜和衬垫氧化膜构成的叠层结构。因此,冗余电路可以是自然的 在不增加工艺步骤的数量的情况下形成,导致高产率而不会增加制造成本。

    Non-volatile semiconductor memory device and method of fabricating
thereof
    49.
    发明授权
    Non-volatile semiconductor memory device and method of fabricating thereof 失效
    非挥发性半导体存储器件及其制造方法

    公开(公告)号:US5793078A

    公开(公告)日:1998-08-11

    申请号:US859775

    申请日:1997-05-21

    摘要: According to the present invention, there is provided a non-volatile semiconductor memory device including a memory cell array in which a plurality of memory cells are arranged, wherein the memory cells contain two or more types of memory cells, which differs in gate couple ratio. Each memory cell includes source-drain regions provided apart from each other in a semiconductor substrate having a conductivity type, the source-drain regions having a conductivity type opposite to that of the semiconductor substrate, a floating gate provided above a channel region formed between the source-drain regions, and a control gate provided above a surface of the floating gate, and the memory cells contain two or more types of memory cells, which differ in relation to an area of a region in which the floating gate and the control gate overlap. The memory cells having a low gate couple ratio exhibit characteristics similar to those of a mask ROM, which gives priority to reading, whereas the memory cells having a high gate couple ratio, exhibit excellent programming and erasing characteristics.

    摘要翻译: 根据本发明,提供了一种非易失性半导体存储器件,包括其中布置有多个存储单元的存储单元阵列,其中存储单元包含两种或更多种类型的存储单元,其门对偶比不同 。 每个存储单元包括在具有导电类型的半导体衬底中彼此分开设置的源极 - 漏极区域,源极 - 漏极区域具有与半导体衬底的导电类型相反的导电类型,浮置栅极设置在形成在 源极 - 漏极区域和设置在浮置栅极的表面上方的控制栅极,并且存储器单元包含两个或更多种类型的存储器单元,其相对于浮动栅极和控制栅极的区域的区域而不同 交叠。 具有低栅极耦合比的存储单元表现出与掩盖ROM相似的特性,其优先于读取,而具有高栅极耦合比的存储单元表现出优异的编程和擦除特性。

    Apparatus and method for determining current or voltage of a
semiconductor device
    50.
    发明授权
    Apparatus and method for determining current or voltage of a semiconductor device 失效
    用于确定半导体器件的电流或电压的装置和方法

    公开(公告)号:US5684739A

    公开(公告)日:1997-11-04

    申请号:US565168

    申请日:1995-11-30

    摘要: A reference apparatus for determining a current or voltage of a semiconductor device, includes a plurality of reference cells having threshold values different from each other, and a selection circuit for selecting one of the plurality of reference cells. A current flowing in a semiconductor device can be determined by comparing the current flowing in the reference apparatus, with the current flowing in a semiconductor cell by means of a sense amplifier.

    摘要翻译: 用于确定半导体器件的电流或电压的参考装置包括具有彼此不同的阈值的多个参考单元,以及用于选择多个参考单元之一的选择电路。 可以通过将参考装置中流动的电流与通过读出放大器在半导体单元中流动的电流进行比较来确定在半导体器件中流动的电流。