摘要:
A mounting board is provided which is translucent and has a surface on which an LED is mounted. The mounting board includes a sintered body film having a wavelength shifter which converts a wavelength of light and a sintering binder made of an inorganic material. The wavelength shifter converts a wavelength of light proceeding toward the surface on which the LED is mounted among light emitted by the LED and radiates wavelength-converted light. The sintering binder transmits the light emitted by the LED and the wavelength-converted light.
摘要:
A light bulb shaped lamp according to the present invention includes a translucent base board, an LED chip mounted on the base board, a base for receiving power from outside, at least two power-supply leads for supplying power to the LED chip, and a globe partially attached to the base for housing the base board, the LED chip, and the power-supply leads. Each of the two power-supply leads extends from a side of the base toward inside of the globe and connected to the base board, and the LED chip is provided between a portion at which one of the two power-supply leads and the base board are connected and a portion at which the other of the two power-supply leads and the base board are connected.
摘要:
A phosphorescent phosphor having excellent afterglow luminance characteristics, even under low illumination intensity of radiation conditions, compared to conventional strontium aluminate phosphorescent phosphors of the same type, and particularly a phosphorescent phosphor having excellent initial afterglow luminance characteristics and excellent afterglow luminance characteristics at 60 and 90 minutes after cessation of the excitation, with following requirements: 0.015
摘要:
A metal halide lamp in which an arc tube is housed within a bulb having a base at one end thereof. The arc tube includes a main tube, two thin tubes that extend one from each end of the main tube, and a pair of electrode inductors. The main tube and the thin tubes are made from translucent polycrystalline alumina and constitute a discharge vessel having a discharge space therein. Lamp power under dimming conditions is set in a range defined by maximum lamp power Wmax [W] and minimum lamp power Wmin [W], with a surface area S [cm2] of the inner surface of the discharge vessel satisfying Wmax/60≦S≦Wmin/20.
摘要:
A metal halide lamp in which an arc tube is housed within a bulb having a base at one end thereof. The arc tube includes a main tube, two thin tubes that extend one from each end of the main tube, and a pair of electrode inductors. The main tube and the thin tubes are made from translucent polycrystalline alumina and constitute a discharge vessel having a discharge space therein. Lamp power under dimming conditions is set in a range defined by maximum lamp power Wmax [W] and minimum lamp power Wmin [W], with a surface area S [cm2] of the inner surface of the discharge vessel satisfying Wmax/60≦S≦Wmin/20.
摘要:
A ribbon and a bonding wire are connected respectively to a high-frequency input and output of a microwave circuit, the width of the ribbon and/or the thickness of the bonding wire being varied continuously or discontinuously at a portion other than a portion used for bonding. By applying the ribbon and bonding wire to a microwave circuit package including a metallic substrate and sealing therein an MMIC mounted to the metallic substrate, desired high-frequency characteristics of the MMIC can be obtained.
摘要:
A cell portion 10 of a MOS structure and a redundant cell portion 12 of an MNOS structure are formed in a single semiconductor substrate. These MOS and MNOS structures commonly include an oxide film 26. A laminate structure consisting of a silicon nitride film and a pad oxide film and used in the element separation step is included in the redundant cell portion 12. Therefore, the redundant circuit can be naturally formed without increasing the number of process steps, leading to a high yield without inviting an increase in the manufacturing cost.
摘要:
According to the present invention, there is provided a non-volatile semiconductor memory device including a memory cell array in which a plurality of memory cells are arranged, wherein the memory cells contain two or more types of memory cells, which differs in gate couple ratio. Each memory cell includes source-drain regions provided apart from each other in a semiconductor substrate having a conductivity type, the source-drain regions having a conductivity type opposite to that of the semiconductor substrate, a floating gate provided above a channel region formed between the source-drain regions, and a control gate provided above a surface of the floating gate, and the memory cells contain two or more types of memory cells, which differ in relation to an area of a region in which the floating gate and the control gate overlap. The memory cells having a low gate couple ratio exhibit characteristics similar to those of a mask ROM, which gives priority to reading, whereas the memory cells having a high gate couple ratio, exhibit excellent programming and erasing characteristics.
摘要:
A reference apparatus for determining a current or voltage of a semiconductor device, includes a plurality of reference cells having threshold values different from each other, and a selection circuit for selecting one of the plurality of reference cells. A current flowing in a semiconductor device can be determined by comparing the current flowing in the reference apparatus, with the current flowing in a semiconductor cell by means of a sense amplifier.