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    Gas Baffle and Distributor for Semiconductor Processing Chamber
    41.
    发明申请
    Gas Baffle and Distributor for Semiconductor Processing Chamber 有权
    半导体加工室的气体挡板和分配器

    公开(公告)号：US20090093129A1

    公开(公告)日：2009-04-09

    申请号：US12253687

    申请日：2008-10-17

    申请人： Soonam Park ,  Farhan Ahmad ,  Hemant P. Mungekar ,  Sanjay Kamath ,  Young S. Lee ,  Siqing Lu

    发明人： Soonam Park ,  Farhan Ahmad ,  Hemant P. Mungekar ,  Sanjay Kamath ,  Young S. Lee ,  Siqing Lu

    IPC分类号： H01L21/31

    CPC分类号： C23C16/45563 ,  C23C16/4401 ,  C23C16/4404

    摘要： Apparatus and methods for distributing gas in a semiconductor process chamber are provided. In an embodiment, a gas distributor for use in a gas processing chamber comprises a body. The body includes a baffle with a gas deflection surface to divert the flow of a gas from a first direction to a second direction. The gas deflection surface comprises a concave surface. The concave surface comprises at least about 75% of the surface area of the gas deflection surface. The concave surface substantially deflects the gas toward a chamber wall and provides decreased metal atom contamination from the baffle so that season times can be reduced.

    摘要翻译： 提供了用于在半导体处理室中分配气体的装置和方法。 在一个实施例中，用于气体处理室的气体分配器包括主体。 主体包括具有气体偏转表面的挡板以将气体的流动从第一方向转移到第二方向。 气体偏转表面包括凹面。 凹面包括至少约75％的气体偏转表面的表面积。 凹面大致使气体朝向室壁偏转，并且提供了来自挡板的减少的金属原子污染物，从而可以减少季节时间。

    REDUCTION OF ETCH-RATE DRIFT IN HDP PROCESSES
    42.
    发明申请
    REDUCTION OF ETCH-RATE DRIFT IN HDP PROCESSES 有权
    降低HDP工艺中的蚀刻速率

    公开(公告)号：US20090075489A1

    公开(公告)日：2009-03-19

    申请号：US12204503

    申请日：2008-09-04

    申请人： Anchuan Wang ,  Young S. Lee ,  Manoj Vellaikal ,  Jason Thomas Bloking ,  Jin Ho Jeon ,  Hemant P. Mungekar

    发明人： Anchuan Wang ,  Young S. Lee ,  Manoj Vellaikal ,  Jason Thomas Bloking ,  Jin Ho Jeon ,  Hemant P. Mungekar

    IPC分类号： H01L21/31

    CPC分类号： C23C16/045 ,  C23C16/4404 ,  C23C16/4405 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612

    摘要： A processing chamber is seasoned by providing a flow of season precursors to the processing chamber. A high-density plasma is formed from the season precursors by applying at least 7500 W of source power distributed with greater than 70% of the source power at a top of the processing chamber. A season layer having a thickness of at least 5000 Å is deposited at one point using the high-density plasma. Each of multiple substrates is transferred sequentially into the processing chamber to perform a process that includes etching. The processing chamber is cleaned between sequential transfers of the substrates.

    摘要翻译： 通过向处理室提供季节前体的流动来调节处理室。 通过在处理室的顶部施加分配有大于70％的源功率的至少7500W的源功率，从季节前体形成高密度等离子体。 使用高密度等离子体在一个点沉积具有至少5000埃的厚度的季节层。 将多个基板中的每一个依次传送到处理室中以执行包括蚀刻的处理。 在基板的顺序转印之间清洁处理室。

    GAPFILL EXTENSION OF HDP-CVD INTEGRATED PROCESS MODULATION SIO2 PROCESS
    43.
    发明申请
    GAPFILL EXTENSION OF HDP-CVD INTEGRATED PROCESS MODULATION SIO2 PROCESS 审中-公开
    GAPFILL扩展HDP-CVD集成过程调制SIO2过程

    公开(公告)号：US20080299775A1

    公开(公告)日：2008-12-04

    申请号：US11757637

    申请日：2007-06-04

    申请人： Anchuan Wang ,  Young S. Lee ,  Manoj Vellaikal ,  Jason Thomas Bloking ,  Jin Ho Jeon ,  Hemant P. Mungekar

    发明人： Anchuan Wang ,  Young S. Lee ,  Manoj Vellaikal ,  Jason Thomas Bloking ,  Jin Ho Jeon ,  Hemant P. Mungekar

    IPC分类号： H01L21/311

    CPC分类号： H01L21/31608 ,  C23C16/045 ,  C23C16/45523 ,  C23C16/507 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/76229

    摘要： Methods are disclosed for depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A silicon-containing gas, an oxygen-containing gas, and a fluent gas are flowed into the substrate processing chamber. A high-density plasma is formed from the silicon-containing gas, the oxygen-containing gas, and the fluent gas. A first portion of the silicon oxide film is deposited using the high-density plasma at a deposition rate between 900 and 6000 Å/min and with a deposition/sputter ratio greater than 30. The deposition/sputter ratio is defined as a ratio of a net deposition rate and a blanket sputtering rate to the blanket sputtering rate. Thereafter, a portion of the deposited first portion of the silicon oxide film is etched. A second portion of the silicon oxide film is deposited over the etched portion of the silicon oxide film.

    摘要翻译： 公开了用于在设置在基板处理室中的基板上沉积氧化硅膜的方法。 基板在相邻的凸起表面之间形成间隙。 含硅气体，含氧气体和流动气体流入衬底处理室。 由含硅气体，含氧气体和流动气体形成高密度等离子体。 使用高密度等离子体以900和6000 / min之间的沉积速率并且沉积/溅射比大于30沉积氧化硅膜的第一部分。沉积/溅射比定义为 净沉积速率和覆盖溅射速率的覆盖溅射速率。 此后，蚀刻氧化硅膜的沉积的第一部分的一部分。 氧化硅膜的第二部分沉积在氧化硅膜的蚀刻部分上。

    MULTI-STEP DEP-ETCH-DEP HIGH DENSITY PLASMA CHEMICAL VAPOR DEPOSITION PROCESSES FOR DIELECTRIC GAPFILLS
    44.
    发明申请
    MULTI-STEP DEP-ETCH-DEP HIGH DENSITY PLASMA CHEMICAL VAPOR DEPOSITION PROCESSES FOR DIELECTRIC GAPFILLS 审中-公开
    多级DEP-ETCH-DEP高密度等离子体化学气相沉积工艺用于电介质

    公开(公告)号：US20080142483A1

    公开(公告)日：2008-06-19

    申请号：US11947619

    申请日：2007-11-29

    申请人： Zhong Qiang Hua ,  Rionard Purnawan ,  Jason Thomas Bloking ,  Anchuan Wang ,  Young S. Lee ,  Ellie Y. Yieh

    发明人： Zhong Qiang Hua ,  Rionard Purnawan ,  Jason Thomas Bloking ,  Anchuan Wang ,  Young S. Lee ,  Ellie Y. Yieh

    IPC分类号： B44C1/22

    CPC分类号： C23C16/401 ,  C23C16/045 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31111 ,  H01L21/3145 ,  H01L21/31612

    摘要： A method of forming a dielectric material in a substrate gap using a high-density plasma is described. The method may include depositing a first portion of the dielectric material into the gap with the high-density plasma. The deposition may form a protruding structure that at least partially blocks the deposition of the dielectric material into the gap. The first portion of dielectric material is exposed to an etchant that includes reactive species from a mixture that includes NH3 and NF3. The etchant forms a solid reaction product with the protruding structure, and the solid reaction product may be removed from the substrate. A final portion of the dielectric material may be deposited in the gap with the high-density plasma.

    摘要翻译： 描述了使用高密度等离子体在衬底间隙中形成电介质材料的方法。 该方法可以包括将电介质材料的第一部分沉积到具有高密度等离子体的间隙中。 沉积可以形成至少部分地阻挡介电材料沉积到间隙中的突出结构。 电介质材料的第一部分暴露于包括来自包括NH 3和N N 3 3的混合物的反应物质的蚀刻剂。 蚀刻剂形成具有突出结构的固体反应产物，并且固体反应产物可以从基底上除去。 介电材料的最终部分可以与高密度等离子体在间隙中沉积。

    Video bit rate control method
    45.
    发明授权
    Video bit rate control method 失效
    视频比特率控制方法

    公开(公告)号：US5617150A

    公开(公告)日：1997-04-01

    申请号：US492158

    申请日：1995-06-19

    申请人： Jae Y. Nam ,  Sang G. Park ,  Young S. Lee ,  Chie T. Ahn

    发明人： Jae Y. Nam ,  Sang G. Park ,  Young S. Lee ,  Chie T. Ahn

    IPC分类号： G06T9/00 ,  H04N19/00 ,  H04N19/115 ,  H04N19/126 ,  H04N19/142 ,  H04N19/15 ,  H04N19/159 ,  H04N19/169 ,  H04N19/177 ,  H04N19/85 ,  H04N7/36

    CPC分类号： H04N19/87 ,  H04N19/115 ,  H04N19/142 ,  H04N19/159 ,  H04N19/176 ,  H04N19/177 ,  H04N19/179 ,  H04N19/503 ,  H04N19/61 ,  H04N19/146 ,  H04N19/152

    摘要： A video bit rate control method. SUBGOPs are defined as sets of two to four frames in a GOP. For example, if the GOP comprises IBBPBBPBBPBB frames, each of the SUBGOPs is defined as a set of the IBBP or BBP frames. Before bit assignment is performed with respect to frames to be coded, it is checked whether a scene change is present with respect to frames in successive ones of the SUBGOPs. If it is checked that the scene change is not present, a bit rate is controlled in a conventional manner. In the case where the scene change is present, a smaller bits than that in the conventional manner is assigned to frames with no scene change and a relatively large bit amount is assigned to a frame with the scene change. Therefore, according to the present invention, the video bit rate control method has the effect of preventing a degradation in a picture quality due to the scene change.

    摘要翻译： 视频比特率控制方法。 SUBGOP被定义为GOP中两到四帧的集合。 例如，如果GOP包括IBBPBBPBBPBB帧，则每个SUBGOP被定义为IBBP或BBP帧的集合。 在相对于要编码的帧执行比特分配之前，检查是否存在相对于SUBGOP中的连续帧中的帧的场景改变。 如果检查到场景变化不存在，则以常规方式控制比特率。 在存在场景变化的情况下，比没有场景变化的帧分配比现有方式更小的比特，并且将相对大的比特量分配给具有场景变化的帧。 因此，根据本发明，视频比特率控制方法具有防止由于场景变化引起的画面质量劣化的效果。

    Task management in a workforce environment using an acoustic map constructed from aggregated audio
    47.
    发明授权
    Task management in a workforce environment using an acoustic map constructed from aggregated audio 有权
    使用由聚合音频构建的声学地图的劳动力环境中的任务管理

    公开(公告)号：US08706540B2

    公开(公告)日：2014-04-22

    申请号：US12962782

    申请日：2010-12-08

    申请人： Pawitter Mangat ,  Timothy J. Collins ,  Young S. Lee

    发明人： Pawitter Mangat ,  Timothy J. Collins ,  Young S. Lee

    IPC分类号： G06Q10/00

    CPC分类号： G06Q10/00 ,  G06Q10/06311 ,  G06Q30/00 ,  G06Q30/0241

    摘要： Incoming audio from mobile devices can be centrally processed, where a server can filter background noise in real time, such as by using an XOR function. Instead of discarding the filtered noise, however, it can be processed in parallel to dynamically construct an acoustic map of the environment. The acoustic map can be generated from an aggregation of sound data from multiple devices positioned in a geographic environment. The acoustic map can be linked to a configurable set of rules, conditions, and events, which can cause dynamic adjustments to be made to a workforce task management system. For example, employee availability can be assessed using the acoustic map and workforce tasks can be assigned based in part upon this availability.

    摘要翻译： 可以集中处理来自移动设备的传入音频，其中服务器可以实时过滤背景噪声，例如使用XOR功能。 然而，代替放弃滤波后的噪声，可以并行处理，以动态构建环境声学图。 声学图可以从位于地理环境中的多个设备的声音数据的聚集生成。 声学图可以链接到可配置的一组规则，条件和事件，这可以导致对劳动力任务管理系统进行动态调整。 例如，可以使用声学图来评估员工的可用性，并且可以部分地基于这种可用性分配劳动力任务。

    Selective suppression of dry-etch rate of materials containing both silicon and nitrogen
    48.
    发明授权
    Selective suppression of dry-etch rate of materials containing both silicon and nitrogen 失效
    选择性抑制含有硅和氮的材料的干蚀刻速率

    公开(公告)号：US08679983B2

    公开(公告)日：2014-03-25

    申请号：US13449441

    申请日：2012-04-18

    申请人： Yunyu Wang ,  Anchuan Wang ,  Jingchun Zhang ,  Nitin K. Ingle ,  Young S. Lee

    发明人： Yunyu Wang ,  Anchuan Wang ,  Jingchun Zhang ,  Nitin K. Ingle ,  Young S. Lee

    IPC分类号： H01L21/302 ,  B44C1/22

    CPC分类号： H01L21/3065 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/32137

    摘要： A method of suppressing the etch rate for exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. The etch selectivity of silicon relative to silicon nitride and other silicon-and-nitrogen-containing material is increased using the method. The first stage of the remote plasma etch reacts plasma effluents with the patterned heterogeneous structures to form protective solid by-product on the silicon-and-nitrogen-containing material. The plasma effluents of the first stage are formed from a remote plasma of a combination of precursors, including nitrogen trifluoride and hydrogen (H2). The second stage of the remote plasma etch also reacts plasma effluents with the patterned heterogeneous structures to selectively remove material which lacks the protective solid by-product. The plasma effluents of the second stage are formed from a remote plasma of a fluorine-containing precursor.

    摘要翻译： 描述了抑制图案化异质结构上暴露的含硅和氮的材料的蚀刻速率的方法，并且包括两级远程等离子体蚀刻。 使用该方法，硅相对于氮化硅和其它含硅和氮的材料的蚀刻选择性增加。 远程等离子体蚀刻的第一阶段使等离子体流出物与图案化的异质结构反应，以在含硅和氮的材料上形成保护性固体副产物。 第一级的等离子体流出物由包括三氟化氮和氢气（H 2）在内的前体组合的远程等离子体形成。 远程等离子体蚀刻的第二阶段还使等离子体流出物与图案化的异质结构反应，以选择性地去除缺乏保护性固体副产物的材料。 第二级的等离子体流出物由含氟前体的远程等离子体形成。

    Selective suppression of dry-etch rate of materials containing both silicon and oxygen
    49.
    发明授权
    Selective suppression of dry-etch rate of materials containing both silicon and oxygen 有权
    选择性抑制含有硅和氧的材料的干蚀刻速率

    公开(公告)号：US08679982B2

    公开(公告)日：2014-03-25

    申请号：US13449543

    申请日：2012-04-18

    申请人： Yunyu Wang ,  Anchuan Wang ,  Jingchun Zhang ,  Nitin K. Ingle ,  Young S. Lee

    发明人： Yunyu Wang ,  Anchuan Wang ,  Jingchun Zhang ,  Nitin K. Ingle ,  Young S. Lee

    IPC分类号： H01L21/311

    CPC分类号： H01L21/31116 ,  H01J37/32357 ,  H01L21/3065 ,  H01L21/32137

    摘要： A method of suppressing the etch rate for exposed silicon-and-oxygen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. Examples of materials whose selectivity is increased using this technique include silicon nitride and silicon. The first stage of the remote plasma etch reacts plasma effluents with the patterned heterogeneous structures to form protective solid by-product on the silicon-and-oxygen-containing material. The plasma effluents of the first stage are formed from a remote plasma of a combination of precursors, including a nitrogen-containing precursor and a hydrogen-containing precursor. The second stage of the remote plasma etch also reacts plasma effluents with the patterned heterogeneous structures to selectively remove material which lacks the protective solid by-product. The plasma effluents of the second stage are formed from a remote plasma of a fluorine-containing precursor.

    摘要翻译： 描述了抑制图案化异质结构上暴露的含硅和氧的材料的蚀刻速率的方法，并且包括两级远程等离子体蚀刻。 使用该技术提高其选择性的材料的实例包括氮化硅和硅。 远程等离子体蚀刻的第一阶段使等离子体流出物与图案化的异质结构反应，以在含硅和氧的材料上形成保护性固体副产物。 第一级的等离子体流出物由包括含氮前体和含氢前体的前体组合的远程等离子体形成。 远程等离子体蚀刻的第二阶段还使等离子体流出物与图案化的异质结构反应，以选择性地去除缺乏保护性固体副产物的材料。 第二级的等离子体流出物由含氟前体的远程等离子体形成。

    Integrated process modulation for PSG gapfill
    50.
    发明授权
    Integrated process modulation for PSG gapfill 失效
    用于PSG填隙的集成过程调制

    公开(公告)号：US08497211B2

    公开(公告)日：2013-07-30

    申请号：US13490426

    申请日：2012-06-06

    申请人： Young S. Lee ,  Anchuan Wang ,  Lan Chia Chan ,  Shankar Venkataraman

    发明人： Young S. Lee ,  Anchuan Wang ,  Lan Chia Chan ,  Shankar Venkataraman

    IPC分类号： H01L21/311

    CPC分类号： C23C16/56 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02129 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/76224

    摘要： A method of depositing a phosphosilicate glass (PSG) film on a substrate disposed in a substrate processing chamber includes depositing a first portion of the PSG film over the substrate using a high-density plasma process. Thereafter, a portion of the first portion of the PSG film may be etched back. The etch back process may include flowing a halogen precursor to the substrate processing chamber, forming a high-density plasma from the halogen precursor, and terminating flowing the halogen precursor after the etch back. The method also includes flowing a halogen scavenger to the substrate processing chamber to react with residual halogen in the substrate processing chamber, and exposing the first portion of the PSG film to a phosphorus-containing gas to provide a substantially uniform phosphorus concentration throughout the first portion of the PSG film.

    摘要翻译： 在设置在衬底处理室中的衬底上沉积磷硅玻璃（PSG）膜的方法包括使用高密度等离子体工艺在衬底上沉积第一部分PSG膜。 此后，PSG膜的第一部分的一部分可被回蚀刻。 回蚀工艺可以包括将卤素前体流动到衬底处理室，从卤素前体形成高密度等离子体，并且在回蚀刻之后使卤素前体终止流动。 该方法还包括使卤素清除剂流到衬底处理室以与衬底处理室中的残留卤素反应，并将PSG膜的第一部分暴露于含磷气体，以在整个第一部分中提供基本均匀的磷浓度 的PSG电影。