Abstract:
Methods and systems for monitoring a parameter of a measurement device during polishing, damage to a specimen during polishing, a characteristic of a polishing pad, or a characteristic of a polishing tool are provided. One method includes scanning a specimen with a measurement device during polishing of a specimen to generate output signals at measurement spots on the specimen. The method also includes determining if the output signals are outside of a range of output signals. Output signals outside of the range may indicate that a parameter of the measurement device is out of control limits. In a different embodiment, output signals outside of the range may indicate damage to the specimen. Another method includes scanning a polishing pad with a measurement device to generate output signals at measurement spots on the polishing pad. The method also includes determining a characteristic of the polishing pad from the output signals.
Abstract:
Systems and methods for controlling deposition of a charge on a wafer for measurement of one or more electrical properties of the wafer are provided. One system includes a corona source configured to deposit the charge on the wafer and a sensor configured to measure one or more conditions within the corona source. This system also includes a control subsystem configured to alter one or more parameters of the corona source based on the one or more conditions. Another system includes a corona source configured to deposit the charge on the wafer and a mixture of gases disposed within a discharge chamber of the corona source during the deposition of the charge. The mixture of gases alters one or more parameters of the charge deposited on the wafer.
Abstract:
Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, critical dimension and overlay misregistration. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.
Abstract:
Methods, defect review tools, and systems for locating a defect in a defect review process are provided. One method includes acquiring one or more images and data from an inspection tool. The one or more images illustrate an area on a specimen in which a defect to be reviewed is located. The data indicates a position and features of the defect within the area. The method also includes acquiring one or more additional images of the specimen proximate the position of the defect indicated in the data using an imaging subsystem of a defect review tool. In addition, the method includes identifying a portion of the one or more additional images that corresponds to the one or more images. The method further includes determining a position of the defect within the portion of the one or more additional images using the data.
Abstract:
Systems configured to inspect a wafer are provided. One system includes an illumination subsystem configured to illuminate an area on the wafer by directing light to the wafer at an oblique angle of incidence. The system also includes a collection subsystem configured to simultaneously collect light scattered from different spots within the illuminated area and to focus the light collected from the different spots to corresponding positions in an image plane. In addition, the system includes a detection subsystem configured to separately detect the light focused to the corresponding positions in the image plane and to separately generate output responsive to the light focused to the corresponding positions in the image plane. The output can be used to detect defects on the wafer.
Abstract:
Various methods and systems for identifying defect types on a wafer are provided. One computer-implemented method for identifying defect types on a wafer includes acquiring output of an inspection system for defects detected on a wafer. The output is acquired by different combinations of illumination and collection channels of the inspection system. The method also includes identifying defect types of the defects based on the output acquired by a set of the different combinations. The set of the different combinations is selected based on the defect types to be identified on the wafer and a wafer type of the wafer such that a different set of the different combinations of the illumination and collection channels is used for identifying different defect types on different wafer types.
Abstract:
Systems and methods for inspecting an edge of a specimen are provided. One system includes an illumination subsystem configured to direct light to the edge of the specimen at an oblique angle of incidence. The plane of incidence of the light is substantially perpendicular to a plane substantially tangent to the edge of the specimen. The system also includes a detection subsystem configured to collect light scattered from the edge and to generate signals responsive to the scattered light. One method includes directing light to the edge of the specimen at an oblique angle of incidence. The plane of incidence is substantially perpendicular to a plane substantially tangent to the edge of the specimen. The method also includes collecting light scattered from the edge and generating signals responsive to the scattered light. The signals described above can be used to detect defects on the edge of the specimen.
Abstract:
Various methods, carrier media, and systems for detecting defects on a specimen using a combination of bright field channel data and dark field channel data are provided. One computer-implemented method includes combining pixel-level data acquired for the specimen by a bright field channel and a dark field channel of an inspection system. The method also includes detecting defects on the specimen by applying a two-dimensional threshold to the combined data. The two-dimensional threshold is defined as a function of a threshold for the data acquired by the bright field channel and a threshold for the data acquired by the dark field channel.
Abstract:
Methods and systems for providing illumination of a specimen for a process performed on the specimen are provided. One system configured to provide illumination of a specimen for a process performed on the specimen includes a laser configured to generate excitation light. The system also includes focusing optics configured to focus the excitation light to a plasma in an electrodeless lamp such that the plasma generates light. The system is also configured such that the light illuminates the specimen during the process.
Abstract:
A method and apparatus for inspecting patterned substrates, such as photomasks, for unwanted particles and features occurring on the transmissive as well as pattern defects. A transmissive substrate is illuminated by a laser through an optical system comprised of a laser scanning system, individual transmitted and reflected light collection optics and detectors collect and generate signals representative of the light transmitted and reflected by the substrate. The defect identification of the substrate is performed using transmitted and reflected light signals from a baseline comparison between two specimens, or one specimen and a database representation, to form a calibration pixelated training set including a non-defective region. This calibration pixilated training set is compared to a transmitted-reflected plot map of the subject specimen to assess surface quality.