Finite impulse response filter
    41.
    发明授权
    Finite impulse response filter 失效
    有限脉冲响应滤波器

    公开(公告)号:US5500811A

    公开(公告)日:1996-03-19

    申请号:US377096

    申请日:1995-01-23

    申请人: Alan G. Corry

    发明人: Alan G. Corry

    CPC分类号: H03H17/0275 H03H17/06

    摘要: A compact Finite Impulse Response (FIR) filter using one or both of a compact address sequencer and a compact multiplier/accumulator. The address sequencer exploits certain symmetry properties existing between different phases of a polyphase FIR filter in order to reduce coefficient storage and simplify address sequencing. The multiplier/accumulator is capable of performing two multiply/accumulate operations per clock cycle, avoiding in certain instances the need to add a second multiplier/accumulator. The area required to realize a FIR filter for performing real-time filter is therefore reduced.

    摘要翻译: 使用紧凑型地址排序器和紧凑型乘法器/累加器之一或两者的紧凑型有限脉冲响应(FIR)滤波器。 地址序列器利用多相FIR滤波器的不同相之间存在的某些对称性,以减少系数存储并简化地址排序。 乘法器/累加器能够在每个时钟周期执行两次乘法/累加操作,避免在某些情况下需要添加第二个乘法器/累加器。 因此,实现用于执行实时滤波器的FIR滤波器所需的面积减少。

    Bipolar junction transistor exhibiting improved beta punch-through
characteristics
    42.
    发明授权
    Bipolar junction transistor exhibiting improved beta punch-through characteristics 失效
    双极结晶体管具有改进的β穿透特性

    公开(公告)号:US5386140A

    公开(公告)日:1995-01-31

    申请号:US114980

    申请日:1993-08-31

    申请人: James A. Matthews

    发明人: James A. Matthews

    摘要: A bipolar transistor having an emitter, a base, and a collector includes an intrinsic base region having narrow side areas and a wider central area. The side areas are located adjacent to the extrinsic base region, while the central area is disposed underneath the emitter. The lateral doping profile of the base is tailored so that the doping concentrations in the extrinsic region and the central area are relatively high compared to the doping concentration of the narrow side areas of the intrinsic base. The combination of the narrow side areas and the lateral base doping profile constrains the depletion region within the base thereby lowering punch-through voltage of the transistor without loss of beta.

    摘要翻译: 具有发射极,基极和集电极的双极晶体管包括具有窄侧面区域和较宽中心区域的本征基极区域。 侧面区域位于外部基极区域附近,而中央区域设置在发射体下方。 定制基极的横向掺杂分布,使得与本征基极的窄边区域的掺杂浓度相比,外在区域和中心区域中的掺杂浓度相对较高。 窄边区域和横向基极掺杂曲线的组合限制了基极内的耗尽区域,从而降低晶体管的穿通电压而不损失β。

    Heat exchanger for solid-state electronic devices
    43.
    发明授权
    Heat exchanger for solid-state electronic devices 失效
    固态电子器件换热器

    公开(公告)号:US5232047A

    公开(公告)日:1993-08-03

    申请号:US820365

    申请日:1992-01-14

    申请人: James A. Matthews

    发明人: James A. Matthews

    IPC分类号: F28F3/12 H01L23/473

    摘要: A microscopic laminar-flow heat exchanger, well-suited for cooling a heat generating device such as a semiconductor integrated circuit, includes a plurality of thin plates, laminated together to form a block. Each plate has a microscopic recessed portion etched into one face of the plate and a pair of holes cut through the plate such that when the block is formed, the holes align to form a pair of coolant distribution manifolds. The manifolds are connected via the plurality of microscopic channels formed from the recessed portions during the lamination process. Coolant flow through these channels effectuates heat removal.

    摘要翻译: 适用于冷却诸如半导体集成电路的发热装置的微型层流式热交换器包括多个薄板,层压在一起以形成块体。 每个板具有蚀刻到板的一个面中的微观凹陷部分和穿过板切割的一对孔,使得当形成块时,孔对准以形成一对冷却剂分配歧管。 在层压过程中,歧管通过由凹部形成的多个微细通道相连接。 通过这些通道的冷却液流动可实现除热。

    Process for fabricating polysilicon resistors and interconnects
    44.
    发明授权
    Process for fabricating polysilicon resistors and interconnects 失效
    制造多晶硅电阻和互连的工艺

    公开(公告)号:US5108945A

    公开(公告)日:1992-04-28

    申请号:US647709

    申请日:1991-01-28

    申请人: James A. Matthews

    发明人: James A. Matthews

    摘要: A process for faricating polysilicon resistors and polysilicon interconnects coupled to MOS field-effect devices in a silicon substrate includes the steps of depositing and etching a first polysilicon layer to form the gates of the MOS devices; then depositing a second layer of polysilicon between the gates. The second polysilicon layer is then etched so that its upper surface is substantially coplanar with the gates. Contact openings are then defined to the source, drain and gate members of the devices through an insulative layer formed over the first and second polysilicon layers. Next, a metal layer is deposited to fill the openings and is patterned to define electrical contacts to the devices. The patterning step also defines the interconnect lines in the metal layer. A third polysilicon layer is then deposited and patterned to define the polysilicon resistors and interconnects.

    摘要翻译: 耦合到硅衬底中的MOS场效应器件的多晶硅电阻器和多晶硅互连件的处理过程包括沉积和蚀刻第一多晶硅层以形成MOS器件的栅极的步骤; 然后在所述栅极之间沉积第二层多晶硅。 然后蚀刻第二多晶硅层,使得其上表面与栅极基本上共面。 然后通过形成在第一和第二多晶硅层上的绝缘层将接触开口限定到器件的源极,漏极和栅极部件。 接下来,沉积金属层以填充开口并被图案化以限定到器件的电触点。 图案化步骤还限定了金属层中的互连线。 然后沉积和图案化第三多晶硅层以限定多晶硅电阻器和互连。

    Processor for performing operations with two wide operands
    45.
    发明授权
    Processor for performing operations with two wide operands 有权
    用于使用两个宽操作数执行操作的处理器

    公开(公告)号:US08812821B2

    公开(公告)日:2014-08-19

    申请号:US13584235

    申请日:2012-08-13

    IPC分类号: G06F9/30

    摘要: A programmable processor and method for improving the performance of processors by expanding at least two source operands, or a source and a result operand, to a width greater than the width of either the general purpose register or the data path width. The present invention provides operands which are substantially larger than the data path width of the processor by using the contents of a general purpose register to specify a memory address at which a plurality of data path widths of data can be read or written, as well as the size and shape of the operand. In addition, several instructions and apparatus for implementing these instructions are described which obtain performance advantages if the operands are not limited to the width and accessible number of general purpose registers.

    摘要翻译: 一种可编程处理器和方法,用于通过将至少两个源操作数或源和结果操作数扩展到大于通用寄存器或数据路径宽度的宽度的宽度来提高处理器的性能。 本发明通过使用通用寄存器的内容来指定可以读取或写入数据的多个数据路径宽度的存储器地址,并且基本上大于处理器的数据路径宽度的操作数,以及 操作数的大小和形状。 此外,描述了用于实现这些指令的几个指令和装置,其如果操作数不限于通用寄存器的宽度和可访问数量,则获得性能优点。

    SYSTEM AND METHOD TO IMPLEMENT A MATRIX MULTIPLY UNIT OF A BROADBAND PROCESSOR
    49.
    发明申请
    SYSTEM AND METHOD TO IMPLEMENT A MATRIX MULTIPLY UNIT OF A BROADBAND PROCESSOR 有权
    用于实现宽带处理器的矩阵多项式单元的系统和方法

    公开(公告)号:US20120215826A1

    公开(公告)日:2012-08-23

    申请号:US13462648

    申请日:2012-05-02

    IPC分类号: G06F7/487 G06F7/485

    摘要: The present invention provides a system and method for improving the performance of general-purpose processors by implementing a functional unit that computes the product of a matrix operand with a vector operand, producing a vector result. The functional unit fully utilizes the entire resources of a 128b by 128b multiplier regardless of the operand size, as the number of elements of the matrix and vector operands increase as operand size is reduced. The unit performs both fixed-point and floating-point multiplications and additions with the highest-possible intermediate accuracy with modest resources.

    摘要翻译: 本发明提供了一种用于通过实现一个功能单元来提高通用处理器的性能的系统和方法,所述功能单元使用向量操作数来计算矩阵操作数的乘积,产生向量结果。 功能单元完全利用128b乘128b乘法器的全部资源,无论操作数大小如何,因为矩阵和向量操作数的元素数量随着操作数大小的减小而增加。 该单元通过适度的资源执行具有最高可能的中间精度的定点和浮点乘法和补充。