Abstract:
To provide an optical thin film structure capable of efficiently dissipating heat in an optical thin film which is generated upon irradiating a surface of an X-ray mirror made up of the optical thin film with an X-ray. The optical thin film having an isotope purity higher than a natural isotope abundance ratio is formed on a mirror to increase heat conductivity of the optical thin film itself and quickly dissipate heat accumulated in the thin film to the outside of an optical system. Consequently, the mirror having high reflectively can be obtained, in which a fine structure of the optical thin film is by no means broken.
Abstract:
An apparatus and method for EUV light production is disclosed which may comprise a laser produced plasma (“LPP”) extreme ultraviolet (“EUV”) light source control system comprising a target delivery system adapted to deliver moving plasma initiation targets and an EUV light collection optic having a focus defining a desired plasma initiation site, comprising: a target tracking and feedback system comprising: at least one imaging device providing as an output an image of a target stream track, wherein the target stream track results from the imaging speed of the camera being too slow to image individual plasma formation targets forming the target stream imaged as the target stream track; a stream track error detector detecting an error in the position of the target stream track in at least one axis generally perpendicular to the target stream track from a desired stream track intersecting the desired plasma initiation site. At least one target crossing detector may be aimed at the target track and detecting the passage of a plasma formation target through a selected point in the target track. A drive laser triggering mechanism utilizing an output of the target crossing detector to determine the timing of a drive laser trigger in order for a drive laser output pulse to intersect the plasma initiation target at a selected plasma initiation site along the target track at generally its closest approach to the desired plasma initiation site. A plasma initiation detector may be aimed at the target track and detecting the location along the target track of a plasma initiation site for a respective target. An intermediate focus illuminator may illuminate an aperture formed at the intermediate focus to image the aperture in the at least one imaging device. The at least one imaging device may be at least two imaging devices each providing an error signal related to the separation of the target track from the vertical centerline axis of the image of the intermediate focus based upon an analysis of the image in the respective one of the at least two imaging devices. A target delivery feedback and control system may comprise a target delivery unit; a target delivery displacement control mechanism displacing the target delivery mechanism at least in an axis corresponding to a first displacement error signal derived from the analysis of the image in the first imaging device and at least in an axis corresponding to a second displacement error signal derived from the analysis of the image in the second imaging device.
Abstract:
A reflection mirror apparatus, used in a reflection optical system of an exposure apparatus which performs exposure processing by guiding exposure light by reflection, has a mirror having a reflection surface to reflect the exposure light, and radiation plates for radiation-cooling provided in positions away from an outer surface of the mirror. The radiation plates are provided so as to ensure a passage area for the exposure light incident on and reflected from the reflection surface of the mirror. Further, the respective radiation plates are temperature-controlled by cooling liquid flowing through cooling pipes. Thus the temperature rise of the mirror used in the reflection optical system of the exposure apparatus can be suppressed, and the accuracy of surface form of the mirror reflection surface can be maintained.
Abstract:
The current invention provides a method and apparatus that minimizes the destructive effects of non-reflected energy during lithography. More specifically, a cooling system is located within the mask. In one example, a cooling module is integrated into the EUV mask. The cooling module may be thermoelectric. The EUV mask comprises a substrate structure as a base for a reticle, a cooling layer, which is formed on the substrate structure and a planarizing layer deposited on the cooling layer. In another example, a cooling channel is formed within the mask.
Abstract:
There is provided a collector for illumination systems for light having a wavelength null193 nm comprising. The collector includes (a) a first mirror shell adjacent to, and positioned inside of, a second mirror shell around a common axis of rotation, in which the first and second mirror shells are rotationally symmetric, and (b) a component in a region between the first and second mirror shells. The collector is for receiving the light from a light source via an object-side aperture and for illuminating an area in an image-side plane, and the region is not used by the light.
Abstract:
A reflective optical element, in particular for a microlithographic projection exposure apparatus or a mask inspection apparatus. According to one aspect, the reflective optical element has an optically effective surface, a substrate (405, 505), a reflection layer system (410, 510) and at least one porous outgassing layer (450, 550), which at least intermittently releases particles adsorbed in the outgassing layer (450, 550) when the optically effective surface (400a, 500a) is irradiated by electromagnetic radiation.
Abstract:
An apparatus for generating extreme ultraviolet light includes a droplet generator which provides a droplet to react with light from a light source to generate extreme ultraviolet light, a droplet collector which collects the droplet, and a droplet detector which includes a plurality of pressure sensors, the pressure sensors detect a position of the droplet provided to the droplet collecting unit.
Abstract:
Provided is an apparatus for generating extreme ultraviolet light. The apparatus includes a collector mirror unit, a gas supply unit configured to supply a processing gas to the collector mirror unit, a gas supply nozzle arranged in at least one area of the collector mirror unit and configured to supply the processing gas to a surface of the collector mirror unit, and a controller configured to adjust a shape of a spray hole of the gas supply nozzle. The shape of the spray hole may be changed according to a control operation of the controller.
Abstract:
A device for UV curing a coating or printed ink on a workpiece such as an optical fiber comprises dual elliptical reflectors arranged to have a co-located focus. The workpiece is centered at the co-located focus such that the dual elliptical reflectors are disposed on opposing sides of the workpiece. Two separate light sources are positioned at a second focus of each elliptical reflector, wherein light irradiated from the light sources is substantially concentrated onto the surface of the workpiece at the co-located focus.
Abstract:
A source-collector module (SOCOMO) for generating a laser-produced plasma (LPP) that emits EUV radiation, and a grazing-incidence collector (GIC) mirror arranged relative to the LPP and having an input end and an output end. The LPP is formed using an LPP target system having a light source portion and a target portion, wherein a pulsed laser beam from the light source portion irradiates Xenon liquid in the target portion. The GIC mirror is arranged relative to the LPP to receive the EUV radiation at its input end and focus the received EUV radiation at an intermediate focus adjacent the output end. A radiation collection enhancement device having at least one funnel element may be used to increase the amount of EUV radiation provided to the intermediate focus and/or directed to a downstream illuminator. An EUV lithography system that utilizes the SOCOMO is also disclosed.