公开(公告)号：US07833826B2

公开(公告)日：2010-11-16

申请号：US12323655

申请日：2008-11-26

申请人： Shinsuke Oka

发明人： Shinsuke Oka

IPC分类号： H01L21/00

CPC分类号： H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78696 ,  H01L31/03685 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： After a gate oxide film 10 has been formed on a silicon substrate G, a first step of forming a microcrystalline silicon film by high electron density plasma of an electron temperature of 2.0 eV or less and a second step of forming an ultra-microcrystalline silicon film by high electron density plasma of an electron temperature higher than 2.0 eV are repeated. A stacked-layer film 20 of the ultra-microcrystalline silicon film and the microcrystalline silicon film is thereby formed. With the film formation method described above, at least one of an n-channel thin-film transistor and a p-channel thin-film transistor with the stacked-layer film 20 functioned as an active layer may be manufactured.

摘要翻译： 在硅基板G上形成了栅极氧化膜10之后，通过电子温度为2.0eV以下的高电子密度等离子体形成微晶硅膜的第一工序和形成超微晶硅膜的第二工序 通过高电子密度重复电子温度高于2.0eV的等离子体。 由此形成超微晶硅膜和微晶硅膜的叠层膜20。 利用上述成膜方法，可以制造作为活性层的层叠膜20的n沟道薄膜晶体管和p沟道型薄膜晶体管中的至少一种。

公开(公告)号：US20100139766A1

公开(公告)日：2010-06-10

申请号：US12623888

申请日：2009-11-23

申请人： Satoshi TORIUMI ,  Toshiya ENDO ,  Eriko OHMORI

发明人： Satoshi TORIUMI ,  Toshiya ENDO ,  Eriko OHMORI

IPC分类号： H01L31/04 ,  H01L31/00 ,  H01L31/18

CPC分类号： H01L31/03685 ,  H01L31/0747 ,  Y02E10/545 ,  Y02E10/548

摘要： A highly-efficient photoelectric conversion device is provided without complicating the manufacturing process. The photoelectric conversion device includes a unit cell having a semiconductor junction, in which a first impurity semiconductor layer having one conductivity type, a semiconductor layer including a first semiconductor region having a larger proportion of a crystalline semiconductor than an amorphous semiconductor and a second semiconductor region having a larger proportion of an amorphous semiconductor than a crystalline semiconductor and including both a radial crystal and a crystal having a needle-like growing end in the amorphous semiconductor, and a second impurity semiconductor layer having a conductivity type opposite to the conductivity type of the first impurity semiconductor layer are stacked in this order.

摘要翻译： 提供高效的光电转换装置，而不会使制造过程复杂化。 光电转换装置包括具有半导体结的单位电池，其中具有一种导电类型的第一杂质半导体层，包括具有比非晶半导体更大比例的结晶半导体的第一半导体区域的半导体层和第二半导体区域 具有比结晶半导体更大比例的非晶半导体，并且在非晶半导体中包括径向晶体和具有针状生长端的晶体，以及具有与导电类型相反的导电类型的第二杂质半导体层 第一杂质半导体层按顺序堆叠。

公开(公告)号：US20100132791A1

公开(公告)日：2010-06-03

申请号：US12597497

申请日：2008-05-29

申请人： Jae-Ho Kim

发明人： Jae-Ho Kim

IPC分类号： H01L31/0248 ,  H01L31/18 ,  H01L31/042 ,  H01L31/0216 ,  H01L31/0384

CPC分类号： H01L31/03685 ,  H01L31/022466 ,  H01L31/03762 ,  H01L31/0745 ,  H01L31/202 ,  H01L31/208 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： A method of fabricating a solar cell includes: sequentially forming a first electrode and a first impurity-doped semiconductor layer on a transparent substrate; forming a first intrinsic semiconductor layer on the first impurity-doped semiconductor layer; heating the first intrinsic semiconductor layer to form a second intrinsic semiconductor layer; and sequentially forming a second impurity-doped semiconductor layer and a second electrode on the second intrinsic semiconductor layer.

摘要翻译： 一种制造太阳能电池的方法包括：在透明基板上依次形成第一电极和第一杂质掺杂半导体层; 在所述第一杂质掺杂半导体层上形成第一本征半导体层; 加热第一本征半导体层以形成第二本征半导体层; 并在第二本征半导体层上依次形成第二杂质掺杂半导体层和第二电极。

公开(公告)号：US20090263930A1

公开(公告)日：2009-10-22

申请号：US12493020

申请日：2009-06-26

申请人： YONG KEE CHAE ,  Soo Young Choi ,  Shuran Sheng

发明人： YONG KEE CHAE ,  Soo Young Choi ,  Shuran Sheng

IPC分类号： H01L31/18 ,  H01L31/0376

CPC分类号： H01L31/075 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L31/03685 ,  H01L31/076 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： Embodiments of the invention as recited in the claims relate to thin film multi-junction solar cells and methods and apparatuses for forming the same. In one embodiment a method of forming a thin film multi-junction solar cell over a substrate is provided. The method comprises positioning a substrate in a reaction zone, providing a gas mixture to the reaction zone, wherein the gas mixture comprises a silicon containing compound and hydrogen gas, forming a first region of an intrinsic type microcrystalline silicon layer on the substrate at a first deposition rate, forming a second region of the intrinsic type microcrystalline silicon layer on the substrate at a second deposition rate higher than the first deposition rate, and forming a third region of the intrinsic type microcrystalline silicon layer on the substrate at a third deposition rate lower than the second deposition rate.

摘要翻译： 权利要求中所述的本发明的实施例涉及薄膜多结太阳能电池及其形成方法和装置。 在一个实施例中，提供了一种在衬底上形成薄膜多结太阳能电池的方法。 该方法包括将基底定位在反应区中，向反应区提供气体混合物，其中气体混合物包含含硅化合物和氢气，在第一个衬底上形成本征型微晶硅层的第一区域 沉积速率，以高于第一沉积速率的第二沉积速率在衬底上形成本征型微晶硅层的第二区域，以及在第三沉积速率下在衬底上形成本征型微晶硅层的第三区域 比第二沉积速率。

公开(公告)号：US20090253225A1

公开(公告)日：2009-10-08

申请号：US12401152

申请日：2009-03-10

申请人： Sebastien Dubois ,  Nicolas Enjalbert ,  Remi Monna

发明人： Sebastien Dubois ,  Nicolas Enjalbert ,  Remi Monna

IPC分类号： H01L21/322 ,  H01L31/0232 ,  H01L31/0236

CPC分类号： H01L31/182 ,  C30B29/52 ,  C30B33/02 ,  H01L21/3225 ,  H01L21/3242 ,  H01L31/03685 ,  H01L31/1812 ,  H01L31/1864 ,  Y02E10/546 ,  Y02P70/521

摘要： Method of processing a substrate containing at least one semiconductor of the SiXAY type and comprising at least four separate types of light elements, comprising at least the following steps: carrying out a first anneal of the substrate at a temperature T1 corresponding to a thermal activation temperature for a first one of the four types of light elements, carrying out a second anneal of the substrate at a temperature T2 corresponding to a thermal activation temperature for a second one of the four types of light elements, carrying out a third anneal of the substrate at a temperature T3 corresponding to a thermal activation temperature for a third one of the four types of light elements, carrying out a fourth anneal of the substrate at a temperature T4 corresponding to a thermal activation temperature for a fourth one of the four types of light elements, each anneal comprising a holding at the temperature T1, T2, T3 or T4 and the temperatures T1, T2, T3 and T4 being such that T1>T2>T3>T4.

摘要翻译： 处理包含至少一种SiXay类型的半导体并且包括至少四种分离类型的光元件的衬底的方法，包括至少以下步骤：在对应于热活化温度的温度T1下进行衬底的第一退火 对于四种类型的光元件中的第一种，在与四种类型的光元件中的第二种类型的光元件的热激活温度相对应的温度T2下进行基板的第二退火，进行基板的第三退火 在与四种类型的光元件中的第三种类型的光元件的热活化温度相对应的温度T3下，在与四种类型的光中的第四种类型的光的热活化温度相对应的温度T4下进行基板的第四退火 元素，每个退火包括在温度T1，T2，T3或T4以及温度T1，T2，T3和T4的保持，使得T1> T2> T 3> T4。

公开(公告)号：US20090209059A1

公开(公告)日：2009-08-20

申请号：US12369760

申请日：2009-02-12

申请人： Fumito ISAKA ,  Sho KATO ,  Junpei MOMO

发明人： Fumito ISAKA ,  Sho KATO ,  Junpei MOMO

IPC分类号： H01L31/0216

CPC分类号： H01L31/022425 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/068 ,  H01L31/1892 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548

摘要： The purpose is manufacturing a photoelectric conversion device with excellent photoelectric conversion characteristics typified by a solar cell with effective use of a silicon material. A single crystal silicon layer is irradiated with a laser beam through an optical modulator to form an uneven structure on a surface thereof. The single crystal silicon layer is obtained in the following manner; an embrittlement layer is formed in a single crystal silicon substrate; one surface of a supporting substrate and one surface of an insulating layer formed over the single crystal silicon substrate are disposed to be in contact and bonded; heat treatment is performed; and the single crystal silicon layer is formed over the supporting substrate by separating part of the single crystal silicon substrate fixed to the supporting substrate along the embrittlement layer or a periphery of the embrittlement layer. Then, irradiation with a laser beam is performed on a separation surface of the single crystal silicon layer through an optical modulator which modulates light intensity regularly, and unevenness is formed on the surface. Due to the unevenness, reflection of incident light is reduced and absorptance with respect to light is improved, therefore, photoelectric conversion efficiency of the photoelectric conversion device is improved.

摘要翻译： 目的是制造具有优异的光电转换特性的光电转换装置，其特征在于以太阳能电池为代表，有效利用硅材料。 通过光学调制器用激光束照射单晶硅层，以在其表面上形成不均匀的结构。 以下列方式获得单晶硅层： 在单晶硅衬底中形成脆化层; 支撑基板的一个表面和形成在单晶硅基板上的绝缘层的一个表面被设置成接触和接合; 进行热处理; 并且通过沿着脆化层或脆化层的周边分离固定到支撑基板上的一部分单晶硅基板，在支撑基板上形成单晶硅层。 然后，通过光调制器在单晶硅层的分离面上进行激光束的照射，光调制器规则地调制光强度，并且在表面上形成不均匀性。 由于不均匀性，入射光的反射降低，相对于光的吸收性提高，光电转换装置的光电转换效率提高。

公开(公告)号：US20090140257A1

公开(公告)日：2009-06-04

申请号：US12323655

申请日：2008-11-26

申请人： Shinsuke OKA

发明人： Shinsuke OKA

IPC分类号： H01L21/20 ,  H01L29/04 ,  H01L31/0368

CPC分类号： H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78696 ,  H01L31/03685 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： After a gate oxide film 10 has been formed on a silicon substrate G, a first step of forming a microcrystalline silicon film by high electron density plasma of an electron temperature of 2.0 eV or less and a second step of forming an ultra-microcrystalline silicon film by high electron density plasma of an electron temperature higher than 2.0 eV are repeated. A stacked-layer film 20 of the ultra-microcrystalline silicon film and the microcrystalline silicon film is thereby formed. With the film formation method described above, at least one of an n-channel thin-film transistor and a p-channel thin-film transistor with the stacked-layer film 20 functioned as an active layer may be manufactured.

摘要翻译： 在硅基板G上形成了栅极氧化膜10之后，通过电子温度为2.0eV以下的高电子密度等离子体形成微晶硅膜的第一工序和形成超微晶硅膜的第二工序 通过高电子密度重复电子温度高于2.0eV的等离子体。 由此形成超微晶硅膜和微晶硅膜的叠层膜20。 利用上述成膜方法，可以制造作为活性层的层叠膜20的n沟道薄膜晶体管和p沟道型薄膜晶体管中的至少一种。

公开(公告)号：US20070169684A1

公开(公告)日：2007-07-26

申请号：US11624365

申请日：2007-01-18

申请人： Nathan G. Stoddard

发明人： Nathan G. Stoddard

IPC分类号： C30B15/00 ,  H01L31/00 ,  C30B13/02 ,  C30B21/06

CPC分类号： H01L31/1804 ,  C30B11/00 ,  C30B11/003 ,  C30B11/14 ,  C30B28/06 ,  C30B29/06 ,  H01L31/02168 ,  H01L31/02363 ,  H01L31/03685 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521 ,  Y10S117/917 ,  Y10T117/1092

摘要： Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of monocrystalline silicon may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm is provided.

摘要翻译： 提供了用于铸造用于光伏电池的硅和其他应用的方法和装置。 通过这样的方法和装置，可以形成单晶硅的铸体，其不具有或基本上没有径向分布的杂质和缺陷，并且具有至少两个尺寸，每个尺寸至少约为35cm。

公开(公告)号：US07001460B2

公开(公告)日：2006-02-21

申请号：US10625672

申请日：2003-07-24

申请人： Keishi Saito ,  Masafumi Sano

发明人： Keishi Saito ,  Masafumi Sano

IPC分类号： C30B25/14

CPC分类号： H01L31/076 ,  H01L31/03685 ,  H01L31/03687 ,  H01L31/056 ,  H01L31/206 ,  Y02E10/52 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： In a semiconductor element comprising microcrystalline semiconductor, a semiconductor junction is provided within a microcrystal grain. Further, in a semiconductor element comprising microcrystalline semiconductor, microcrystal grains of different grain diameters are provided as a mixture to form a semiconductor layer. Thereby, discontinuity of a semiconductor junction is lessened to thereby improve the characteristics, durability, and heat resisting properties of a semiconductor element. Distortion in a semiconductor layer is also reduced.

摘要翻译： 在包含微晶半导体的半导体元件中，在微晶晶粒内提供半导体结。 此外，在包含微晶半导体的半导体元件中，作为混合物提供不同晶粒直径的微晶粒以形成半导体层。 因此，半导体结的不连续性减小，从而提高半导体元件的特性，耐久性和耐热性。 半导体层的失真也减少了。

公开(公告)号：US20050173704A1

公开(公告)日：2005-08-11

申请号：US10625672

申请日：2003-07-24

申请人： Keishi Saito ,  Masafumi Sano

发明人： Keishi Saito ,  Masafumi Sano

IPC分类号： H01L31/0368 ,  H01L31/052 ,  H01L31/076 ,  H01L31/20 ,  H01L29/04

CPC分类号： H01L31/076 ,  H01L31/03685 ,  H01L31/03687 ,  H01L31/056 ,  H01L31/206 ,  Y02E10/52 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： In a semiconductor element comprising microcrystalline semiconductor, a semiconductor junction is provided within a microcrystal grain. Further, in a semiconductor element comprising microcrystalline semiconductor, providing microcrystal grains of different grain diameters as a mixture to form a semiconductor layer. Thereby, discontinuity of a semiconductor junction is improved to improve the characteristics, durability, and heat resisting properties of a semiconductor element. Distortion in a semiconductor layer is also reduced.

摘要翻译： 在包含微晶半导体的半导体元件中，在微晶晶粒内提供半导体结。 此外，在包含微晶半导体的半导体元件中，提供作为混合物的不同粒径的微晶粒以形成半导体层。 因此，提高了半导体结的不连续性以改善半导体元件的特性，耐久性和耐热性能。 半导体层的失真也减少了。