公开(公告)号：US20090168826A1

公开(公告)日：2009-07-02

申请号：US12079475

申请日：2008-03-26

申请人： Jason Nathaniel Farmer ,  Mark Andrew DeVito ,  Zhe Huang ,  Paul Andrew Crump ,  Michael Peter Grimshaw ,  Prabhuram Thiagarajan ,  Weimin Dong ,  Jun Wang

发明人： Jason Nathaniel Farmer ,  Mark Andrew DeVito ,  Zhe Huang ,  Paul Andrew Crump ,  Michael Peter Grimshaw ,  Prabhuram Thiagarajan ,  Weimin Dong ,  Jun Wang

IPC分类号： H01S5/00

CPC分类号： H01S5/343 ,  B82Y20/00 ,  H01S5/3213

摘要： A semiconductor laser and a method of forming the same are provided. The n-side and p-side junctions are independently optimized to improve carrier flow. The material for the n-side cladding layer is selected to yield a small conduction to valance band gap offset ratio while the material for the p-side cladding layer is selected to yield a large conduction to valance band gap offset ratio.

摘要翻译： 提供半导体激光器及其形成方法。 独立地优化n侧和p侧结以改善载流子流动。 选择n侧包覆层的材料以产生小的导通带隙带隙偏移比，同时选择用于p侧包覆层的材料以产生大的导通至带隙偏移比。

公开(公告)号：US07450622B2

公开(公告)日：2008-11-11

申请号：US11723846

申请日：2007-03-22

申请人： Masayuki Hata ,  Yasuhiko Nomura ,  Daijiro Inoue

发明人： Masayuki Hata ,  Yasuhiko Nomura ,  Daijiro Inoue

IPC分类号： H01S5/00

CPC分类号： H01L33/145 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/0213 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/2022 ,  H01S5/204 ,  H01S5/2205 ,  H01S5/2206 ,  H01S5/2216 ,  H01S5/2219 ,  H01S5/2224 ,  H01S5/2226 ,  H01S5/2231 ,  H01S5/3063 ,  H01S5/3213 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2301/18 ,  H01S2304/04

摘要： A nitride-based semiconductor light-emitting device capable of stabilizing transverse light confinement is obtained. This nitride-based semiconductor light-emitting device comprises an emission layer, a cladding layer, formed on the emission layer, including a first nitride-based semiconductor layer and having a current path portion and a current blocking layer, formed to cover the side surfaces of the current path portion, including a second nitride-based semiconductor layer, while the current blocking layer is formed in the vicinity of the current path portion and a region having no current blocking layer is included in a region not in the vicinity of the current path portion. Thus, the width of the current blocking layer is reduced, whereby strain applied to the current blocking layer is relaxed. Consequently, the thickness of the current blocking layer can be increased, thereby stabilizing transverse light confinement.

摘要翻译： 获得能够稳定横向光束缚的氮化物系半导体发光元件。 该氮化物系半导体发光元件具有形成在发光层上的发光层，包层，具有第一氮化物系半导体层，具有电流通路部和电流阻挡层，形成为覆盖侧面 的电流路径部分，包括第二氮化物基半导体层，而电流阻挡层形成在电流路径部分附近，并且没有电流阻挡层的区域包括在不在电流附近的区域中 路径部分。 因此，电流阻挡层的宽度减小，由此施加到电流阻挡层的应变松弛。 因此，可以提高电流阻挡层的厚度，从而稳定横向光的限制。

公开(公告)号：US07218658B2

公开(公告)日：2007-05-15

申请号：US10918358

申请日：2004-08-16

申请人： Kazuhisa Takagi

发明人： Kazuhisa Takagi

IPC分类号： H01S5/00 ,  H01S5/20

CPC分类号： B82Y20/00 ,  H01S5/12 ,  H01S5/2206 ,  H01S5/2214 ,  H01S5/2222 ,  H01S5/2231 ,  H01S5/227 ,  H01S5/305 ,  H01S5/321 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/34313 ,  H01S5/34353 ,  H01S5/34366 ,  H01S5/34373

摘要： A semiconductor laser device according to the present invention comprises an optical waveguide laminated structure having: a first first-cladding layer made up of a p-InP layer; a double heterojunction layer of p-AlGaInAs; a second first-cladding layer made up of a p-InP layer; a first light confining layer of p-InGaAsP; an active layer of InGaAsP having a quantum well structure; a second light confining layer of n-InGaAsP; and a second-cladding layer made up of an n-InP layer, and heterojunctions of the second kind are formed at the interfaces between the first first-cladding layer and the double heterojunction layer and between the double heterojunction layer and the second first-cladding layer.

摘要翻译： 根据本发明的半导体激光器件包括：光波导层叠结构，具有：由p-InP层构成的第一第一包层; p-AlGaInAs的双异质结层; 由p-InP层构成的第二第一包层; p-InGaAsP的第一光限制层; 具有量子阱结构的InGaAsP的有源层; n-InGaAsP的第二光限制层; 以及由n-InP层构成的第二包覆层，并且在第一第一包层和双异质结层之间的界面处以及在双异质结层和第二第一包层之间的界面处形成第二类型的异质结 层。

公开(公告)号：US20070012929A1

公开(公告)日：2007-01-18

申请号：US11520583

申请日：2006-09-14

申请人： Masayuki Hata ,  Yasuhiko Nomura ,  Daijiro Inoue

发明人： Masayuki Hata ,  Yasuhiko Nomura ,  Daijiro Inoue

IPC分类号： H01L33/00 ,  H01L31/12 ,  H01L29/24 ,  H01L27/15 ,  H01L29/26

CPC分类号： H01L33/145 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/0213 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/2022 ,  H01S5/204 ,  H01S5/2205 ,  H01S5/2206 ,  H01S5/2216 ,  H01S5/2219 ,  H01S5/2224 ,  H01S5/2226 ,  H01S5/2231 ,  H01S5/3063 ,  H01S5/3213 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2301/18 ,  H01S2304/04

摘要： A nitride-based semiconductor light-emitting device capable of stabilizing transverse light confinement is obtained. This nitride-based semiconductor light-emitting device comprises an emission layer, a cladding layer, formed on the emission layer, including a first nitride-based semiconductor layer and having a current path portion and a current blocking layer, formed to cover the side surfaces of the current path portion, including a second nitride-based semiconductor layer, while the current blocking layer is formed in the vicinity of the current path portion and a region having no current blocking layer is included in a region not in the vicinity of the current path portion. Thus, the width of the current blocking layer is reduced, whereby strain applied to the current blocking layer is relaxed. Consequently, the thickness of the current blocking layer can be increased, thereby stabilizing transverse light confinement.

摘要翻译： 获得能够稳定横向光束缚的氮化物系半导体发光元件。 该氮化物系半导体发光元件具有形成在发光层上的发光层，包层，具有第一氮化物系半导体层，具有电流通路部和电流阻挡层，形成为覆盖侧面 的电流路径部分，包括第二氮化物基半导体层，而电流阻挡层形成在电流路径部分附近，并且没有电流阻挡层的区域包括在不在电流附近的区域中 路径部分。 因此，电流阻挡层的宽度减小，由此施加到电流阻挡层的应变松弛。 因此，可以提高电流阻挡层的厚度，从而稳定横向光的限制。

公开(公告)号：US20060219999A1

公开(公告)日：2006-10-05

申请号：US11313967

申请日：2005-12-22

申请人： Hyun Shim ,  Suk Yoon ,  Joong Kang ,  Jong Won

发明人： Hyun Shim ,  Suk Yoon ,  Joong Kang ,  Jong Won

IPC分类号： H01L29/06 ,  H01L31/00

CPC分类号： H01L33/14 ,  H01L33/32 ,  H01S5/22 ,  H01S5/305 ,  H01S5/3213 ,  H01S5/3216 ,  H01S5/32341 ,  H01S2301/173

摘要： The present invention provides a group III-nitride light emitting device improved in operating voltage and electrostatic discharge characteristics. The group III-nitride light emitting device comprises a lower n-type clad layer, a current spreading layer, an upper n-type clad layer, an active layer and an p-type clad layer formed in their order on a substrate. The current spreading layer includes a SiC layer.

摘要翻译： 本发明提供了改善工作电压和静电放电特性的III族氮化物发光器件。 III族氮化物发光器件包括在衬底上依次形成的下n型覆盖层，电流扩展层，上n型覆盖层，有源层和p型覆盖层。 电流扩展层包括SiC层。

公开(公告)号：US07113531B2

公开(公告)日：2006-09-26

申请号：US10794028

申请日：2004-03-08

申请人： Dae-sung Song ,  Tak Kim

发明人： Dae-sung Song ,  Tak Kim

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/2004 ,  H01S5/305 ,  H01S5/3213 ,  H01S5/343

摘要： A laser diode is provided. The laser diode has a structure in which reflective index of an n-cladding layer formed on a first face of the active layer is higher than that of a p-cladding layer formed on a second face. This asymmetric waveguide structure suppresses extension of field into the p-cladding layer thus reducing free carrier absorption in the p-cladding layer.

摘要翻译： 提供激光二极管。 激光二极管具有形成在有源层的第一面上的n包覆层的反射率高于形成在第二面上的p包覆层的反射率的结构。 这种不对称波导结构抑制了场到p-包层的扩展，从而减少p-包层中的自由载流子吸收。

公开(公告)号：US20060166386A1

公开(公告)日：2006-07-27

申请号：US10547404

申请日：2005-01-13

申请人： Atsushi Yamada ,  Yasuaki Nagashima ,  Yoshiharu Shimose ,  Tomoyuki Kikugawa

发明人： Atsushi Yamada ,  Yasuaki Nagashima ,  Yoshiharu Shimose ,  Tomoyuki Kikugawa

IPC分类号： H01L21/00 ,  H01L33/00 ,  H01L29/18

CPC分类号： H01L33/02 ,  B82Y20/00 ,  H01L33/0045 ,  H01L33/24 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/1085 ,  H01S5/141 ,  H01S5/16 ,  H01S5/2201 ,  H01S5/2206 ,  H01S5/2222 ,  H01S5/2226 ,  H01S5/227 ,  H01S5/2275 ,  H01S5/305 ,  H01S5/3213 ,  H01S5/3434 ,  H01S5/34373 ,  H01S2301/18 ,  H01S2304/04

摘要： An optical semiconductor device (1) has a semiconductor substrate (2) made of InP, an active layer (7) which is formed in parallel with a top surface (2a) of the semiconductor substrate (2) above the semiconductor substrate (2), an n-type first cladding layer (6) made of InGaAsP which is formed under the active layer (7), a p-type second cladding layer (8) made of InP which is formed under the active layer (7), and window regions (4a, 4b) which are formed at least one light-emitting facet of both light-emitting facets of the active layer (7). The window regions are formed between device facets (1a, 1b) from the light-emitting facet. A relationship is established in which, given that a refractive index of the n-type first cladding layer (6) is na, and a refractive index of the p-type second cladding layer (8) is nb, na>nb is obtained that the refractive index na of the n-type first cladding layer (6) is higher than the refractive index nb of the p-type second cladding layer (8), so as to deflect a distribution of electric field strength of a light generated at the active layer (7) toward the n-type first cladding layer (6) side.

摘要翻译： 光学半导体器件（1）具有由InP制成的半导体衬底（2），与半导体衬底（2）上方的半导体衬底（2）的上表面（2a）平行形成的有源层（7） ），形成在有源层（7）下面的由InGaAsP构成的n型第一包层（6），形成在有源层（7）下方的由InP构成的p型第二包层（8） 和形成有源层（7）的两个发光面的至少一个发光面的窗口区域（4a，4b）。 窗口区域形成在来自发光小面的器件面（1a，1b）之间。 考虑到n型第一包层（6）的折射率为na，p型第二包覆层（8）的折射率为nb，则得到NA> nb， n型第一包层（6）的折射率na高于p型第二包覆层（8）的折射率nb，从而偏转在p型第二包层（8）中产生的光的电场强度分布 有源层（7）朝向n型第一包层（6）侧。

公开(公告)号：US20060120423A1

公开(公告)日：2006-06-08

申请号：US11276463

申请日：2006-03-01

申请人： Tomonori Hino ,  Hironobu Narui ,  Jugo Mitomo

发明人： Tomonori Hino ,  Hironobu Narui ,  Jugo Mitomo

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01L33/32 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/34306 ,  H01S5/34366 ,  Y10S438/935

摘要： For manufacturing a long-wavelength semiconductor light emitting device having excellent characteristics and long lifetime, a highly reactive gas is supplied together with a source material of As while the supply of a source material of a group III element is interrupted during the growth of a layer (GaAs optical guide layer) anteriorly adjacent to the active layer or immediately before the growth of the active layer. The highly reactive gas may be di-methyl hydrazine or ammonia (NH3), for example.

摘要翻译： 为了制造具有优异特性和长寿命的长波长半导体发光器件，在层的生长期间中断III族元素的源材料的供给时，与As的源材料一起提供高反应性气体 （GaAs光导层）在活性层前面或刚好在活性层生长之前。 高反应性气体可以是例如二甲基肼或氨（NH 3）。

公开(公告)号：US20050167835A1

公开(公告)日：2005-08-04

申请号：US11090340

申请日：2005-03-25

申请人： Shigetaka Tomiya ,  Tomonori Hino

发明人： Shigetaka Tomiya ,  Tomonori Hino

IPC分类号： H01S5/042 ,  H01S5/10 ,  H01S5/20 ,  H01S5/32 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343 ,  H01L23/52

CPC分类号： B82Y20/00 ,  H01S5/0421 ,  H01S5/1082 ,  H01S5/3072 ,  H01S5/3201 ,  H01S5/321 ,  H01S5/3213 ,  H01S5/3409 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/12 ,  Y10S438/962

摘要： The present invention is a nitride compound semiconductor laser, in which a cleaved end face is flat, and a breakdown of a laser end face induced during an operation can be suppressed, which consequently enables a life to be prolonged. In the nitride compound semiconductor laser, a stress concentration suppression layer is formed between an active layer and a cap layer.

公开(公告)号：US20050084991A1

公开(公告)日：2005-04-21

申请号：US10844321

申请日：2004-05-13

申请人： Dong Lee ,  Eun Sim ,  Ki Kim ,  Moon Park

发明人： Dong Lee ,  Eun Sim ,  Ki Kim ,  Moon Park

IPC分类号： H01S5/30 ,  H01L21/00 ,  H01S5/22 ,  H01S5/227 ,  H01S5/32 ,  H01S5/50

CPC分类号： H01S5/5009 ,  H01S5/1014 ,  H01S5/2206 ,  H01S5/227 ,  H01S5/3213 ,  H01S2301/173 ,  H01S2301/18

摘要： Provided is a method for manufacturing a planar buried semiconductor optical amplifier in which a spot size converter with a double-core structure is integrated, comprising the steps of: after growing a lower cladding layer, a lower waveguide layer and an upper cladding layer on a substrate, patterning a portion of thickness of the lower cladding layer, the lower waveguide layer and the upper cladding layer through an etching process using a dielectric layer pattern to form a lower waveguide; growing a planarization layer on the etched portions of the lower cladding layer, the lower waveguide layer and the upper cladding layer to smooth a surface; after removing the dielectric layer pattern, growing a space layer, an upper waveguide layer and a first cladding layer on the overall upper surface; patterning the first cladding layer, the upper waveguide layer and the space layer through the etching process using the dielectric layer pattern to form an upper waveguide having a horizontal taper area; after growing a first current blocking layer on the etched portions of the first cladding layer, the upper waveguide layer and the space layer of the upper waveguide, growing a second current blocking layer on the exposed portion of the first current block layer excluding the dielectric layer pattern; and after removing the dielectric layer pattern, forming a second cladding layer on the overall upper surface, and forming an electrode on the second cladding layer and the substrate, respectively.

摘要翻译： 提供一种制造平面埋入式半导体光放大器的方法，其中集成了具有双芯结构的光斑尺寸转换器，包括以下步骤：在下敷层，下波导层和上包层上生长 基板，通过使用电介质层图案的蚀刻工艺构图下包层，下波导层和上包层的厚度的一部分，以形成下波导; 在下包层，下波导层和上包层的蚀刻部分上生长平坦化层，以平滑表面; 在去除介电层图案之后，在整个上表面上生长空间层，上波导层和第一包层; 通过使用电介质层图案的蚀刻工艺图案化第一包层，上波导层和空间层，以形成具有水平锥面积的上波导; 在第一包层的蚀刻部分，上波导层和上波导的空间层上生长第一电流阻挡层之后，在除电介质层之外的第一电流块层的暴露部分上生长第二电流阻挡层 模式; 并且在去除介电层图案之后，在整个上表面上形成第二包层，并分别在第二包覆层和基板上形成电极。