Abstract:
Radiation images with different resolutions may be captured using a general-purpose driver configured with a shift register group in a single system. Each shift register is connected to a first gate line or a second gate line via a connection terminal in accordance with wiring of a radiation detector. Under the control of an FPGA, in a case of low resolution imaging, a panel control section outputs OE signals that disable the output of on signals from the shift registers to the first gate lines in accordance with CPK signals. In a case of high resolution imaging, the panel control section outputs OE signals that disable the output of on signals from the shift registers to the second gate lines. In both cases, an on signal outputted from a shift register is inputted to a succeeding shift register.
Abstract:
An image acquisition device and a method for capturing image data is disclosed. The method comprises exposing an image sensor to light from a scene, selecting substantially all rows of sensor pixels in an image sensor in a substantially random order, starting an exposure period for each row of sensor pixels in the image sensor in the order the rows were selected, buffering the rows of sensor pixels comprised in an image frame until all rows of the image frame have registered image data for the presently captured image frame, and outputting image data representing the image frame by outputting image data from each row of sensor pixels.
Abstract:
A camera array, an imaging device and/or a method for capturing image that employ a plurality of imagers fabricated on a substrate is provided. Each imager includes a plurality of pixels. The plurality of imagers include a first imager having a first imaging characteristics and a second imager having a second imaging characteristics. The images generated by the plurality of imagers are processed to obtain an enhanced image compared to images captured by the imagers. Each imager may be associated with an optical element fabricated using a wafer level optics (WLO) technology.
Abstract:
A camera array, an imaging device and/or a method for capturing image that employ a plurality of imagers fabricated on a substrate is provided. Each imager includes a plurality of pixels. The plurality of imagers include a first imager having a first imaging characteristics and a second imager having a second imaging characteristics. The images generated by the plurality of imagers are processed to obtain an enhanced image compared to images captured by the imagers. Each imager may be associated with an optical element fabricated using a wafer level optics (WLO) technology.
Abstract:
A camera array, an imaging device and/or a method for capturing image that employ a plurality of imagers fabricated on a substrate is provided. Each imager includes a plurality of pixels. The plurality of imagers include a first imager having a first imaging characteristics and a second imager having a second imaging characteristics. The images generated by the plurality of imagers are processed to obtain an enhanced image compared to images captured by the imagers. Each imager may be associated with an optical element fabricated using a wafer level optics (WLO) technology.
Abstract:
Systems, methods, and devices are disclosed, including an electronic device that includes a first data location, a quantizing circuit, and a reference current source, all coupled to an electrical conductor. The reference current source may include a current mirror with a side coupled to the electrical conductor and a second data location coupled to another side of the current mirror.
Abstract:
An image sensor with a small circuit area is provided. In the image sensor, a TX decoder which generates transfer signals TX includes a latch circuit. The latch circuit is set when a corresponding row group is selected and when a set signal is set to an “H” level, and is reset when a reset signal is set to an “L” level. The latch circuit serves also as a voltage level shift circuit which converts the “H” level of a signal from a first power supply voltage into a second power supply voltage. Therefore, plural row groups can be selected by setting plural latch circuits. It is not necessary to provide a voltage level shift circuit separately.
Abstract:
A photoelectric conversion device includes analog signal output units including pixels and configured to output analog signals based on pixels, and signal processing units. Each of the signal processing units is provided correspondingly to one of the analog signal output units and including a gain application unit configured to apply a gain to an analog signal by using only passive elements and an AD conversion unit. In the gain application unit, a portion that contributes to application of a gain to the analog signal is constituted only of passive elements. The gain application unit selectively outputs a first amplified signal obtained by applying a first gain to the analog signal or a second amplified signal obtained by applying a second gain to the analog signal smaller than the first gain. The AD conversion unit converts, from analog to digital, the first or second amplified signal.
Abstract:
A solid-state image pickup device 1 includes a light receiving section 10, a first row selecting section 20, a second row selecting section 30, a first readout section 40, a second readout section 50, and a control section 60. Data of pixel units of rows in the light receiving section 10 selected by the first row selecting section 20 are output by the first readout section 40 to obtain image pickup data, and further, data of the pixel units of rows in the light receiving section 10 selected by the second row selecting section 30 are output by the second readout section 50 to obtain communication data.
Abstract:
There is provided an image pickup apparatus comprising a plurality of pixels each including a photoelectric conversion unit which converts incident light into an electrical signal and accumulates the electrical signal, an amplifier transistor which amplifies and outputs the signal from the photoelectric conversion unit, a transfer transistor which transfers the electrical signal accumulated in the photoelectric conversion unit to the amplifier transistor, and a processing transistor which performs predetermined processing, and a control circuit which sets the signal level supplied to the control electrode of the transfer transistor in order to turn off the transfer transistor to be lower than the signal level supplied to the control electrode of the processing transistor in order to turn off the processing transistor.