公开(公告)号：US4684404A

公开(公告)日：1987-08-04

申请号：US784463

申请日：1985-10-04

申请人： Guy I. Z. Kalocsai

发明人： Guy I. Z. Kalocsai

IPC分类号： C22B11/00 ,  C01G7/00 ,  C22B20060101 ,  C22B3/00 ,  C22B7/00 ,  C23F1/10 ,  C23F1/30 ,  G01N33/20 ,  C22B11/04

CPC分类号： C22B11/04

摘要： The invention provides a reagent suitable for the dissolution of metallic gold and various methods for the application of the reagent including gold analysis, gold extraction, gold separation and the in-situ treatment of gold deposits.The reagent uses a protic solvent containing a preferably non-reducing cation source and a source of bromine optionally in combination with a strong oxidizing agent. The protic solvent is water or a lower alkyl alcohol or a mixture thereof. The cation source preferably highly dissociates in the protic solvent and suitable cation sources include dibasic ammonium phosphate, ammonium sulphate, potassium chromate, hydrochloric acid, sodium hydroxide and potassium hydroxide. Cation sources which liberate ammonium cations are preferred.The strong oxidizing agent should by highly dissociated in the solvent and is preferably selected from the group consisting of hydrogen peroxide, sodium peroxide, potassium peroxide, sodium permanganate, potassium permanganate, potassium dichromate and ferric sulphate.

摘要翻译： 本发明提供了一种适用于金属溶解的试剂和用于应用试剂的各种方法，包括金分析，金提取，金分离和金沉积物的原位处理。 试剂使用含有优选非还原性阳离子源和溴源的质子溶剂，任选与强氧化剂组合。 质子溶剂是水或低级烷基醇或其混合物。 阳离子源优选在质子溶剂中高度解离，合适的阳离子源包括磷酸氢二铵，硫酸铵，铬酸钾，盐酸，氢氧化钠和氢氧化钾。 释放铵阳离子的阳离子源是优选的。 强氧化剂应在溶剂中高度离解，优选选自过氧化氢，过氧化钠，过氧化钾，高锰酸钠，高锰酸钾，重铬酸钾和硫酸铁。

公开(公告)号：US4437929A

公开(公告)日：1984-03-20

申请号：US525071

申请日：1983-08-22

申请人： Kwee C. Wong

发明人： Kwee C. Wong

IPC分类号： H05K3/06 ,  C23F1/02 ,  C23F1/16 ,  C23F1/18 ,  C23F1/30 ,  C23F1/00 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC分类号： C23F1/16

摘要： Improved metal dissolution rates are obtained when using a solution containing sulfuric acid, hydrogen peroxide and a catalytic amount of pyrrolidone such as 2-pyrrolidone or N-methyl-2-pyrrolidone.

摘要翻译： 当使用含有硫酸，过氧化氢和催化量的吡咯烷酮如2-吡咯烷酮或N-甲基-2-吡咯烷酮的溶液时，可以获得改善的金属溶解速率。

公开(公告)号：US4401509A

公开(公告)日：1983-08-30

申请号：US415002

申请日：1982-09-07

申请人： Richard Schellinger, Jr.

发明人： Richard Schellinger, Jr.

IPC分类号： C23F1/18 ,  C23F1/30 ,  H05K3/06 ,  C23F1/00

CPC分类号： H05K3/067 ,  C23F1/18

摘要： Compositions are provided suitable for the etching of printed circuits from a laminate of copper metal and an etch resistant backing at a low hydrogen peroxide concentration and at a low temperature. The etching composition contains sulfuric acid, hydrogen peroxide as the oxidant, thiosulfate ion to counteract the depressing effect of chloride ion on the etch rate, an unsaturated organic hydroxy compound to stabilize the hydrogen peroxide in the presence of copper, and an aminomethylenephosphonic acid.

摘要翻译： 提供了适合于在低过氧化氢浓度和低温下从铜金属和耐蚀刻背衬的层压体蚀刻印刷电路的组合物。 蚀刻组合物含有硫酸，过氧化氢作为氧化剂，硫代硫酸根离子，以抵消氯离子对蚀刻速率的抑制作用，不饱和有机羟基化合物在铜存在下稳定过氧化氢和氨基亚甲基膦酸。

公开(公告)号：US4190489A

公开(公告)日：1980-02-26

申请号：US944631

申请日：1978-09-21

申请人： Surinder K. Bahl ,  Gale L. Leach

发明人： Surinder K. Bahl ,  Gale L. Leach

IPC分类号： C23F1/30 ,  H01L21/3213 ,  C23F1/00

CPC分类号： C23F1/30 ,  H01L21/32134

摘要： A composition and method for etching gold, particularly gold layers on ceramic substrates, in which the gold is contacted at room temperature by an aqueous solution of alkali metal bromide and bromine. The composition is relatively safe and easy to handle and rapidly etches gold.

摘要翻译： 用于蚀刻金，特别是陶瓷基底上的金层的组合物和方法，其中金通过碱金属溴化物和溴的水溶液在室温下接触。 组合相对安全，易于处理，并快速蚀刻黄金。

公开(公告)号：US3375149A

公开(公告)日：1968-03-26

申请号：US2386548

申请日：1948-04-28

申请人： ATOMIC ENERGY COMMISSION USA

发明人： MORRIS KOLODNEY

IPC分类号： C23F1/30

CPC分类号： C23F1/30

公开(公告)号：US12080801B2

公开(公告)日：2024-09-03

申请号：US17571858

申请日：2022-01-10

申请人： The Board of Trustees of the University of Illinois

发明人： Edmund G. Seebauer

IPC分类号： H01L29/78 ,  C23C22/82 ,  C23C22/83 ,  C23F1/30 ,  H01L21/3213 ,  H01L21/67 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L29/7869 ,  C23C22/82 ,  C23C22/83 ,  C23F1/30 ,  H01L21/32134 ,  H01L21/67075 ,  H01L27/1225

摘要： A method of controlling oxygen vacancy concentration in a semiconducting metal oxide includes exposing a treated surface of a crystalline metal oxide to water at a temperature and pressure sufficient to maintain the water in a liquid phase. During the exposure, a portion of the water is adsorbed onto the treated surface and dissociates into atomic oxygen and hydrogen. The atomic oxygen is injected into and diffuses through the crystalline metal oxide, forming isolated oxygen interstitials and oxygen defect complexes. The isolated oxygen interstitials replace oxygen vacancies in the crystalline metal oxide.

公开(公告)号：US11952669B2

公开(公告)日：2024-04-09

申请号：US17525203

申请日：2021-11-12

申请人： TECH MET, INC.

发明人： Michael Vidra ,  Daniel Jon Schutzer ,  Jordan Incerpi

IPC分类号： C23F1/28 ,  A61L27/04 ,  A61L27/06 ,  A61L27/36 ,  A61L27/50 ,  C23F1/30

CPC分类号： C23F1/28 ,  A61L27/042 ,  A61L27/047 ,  A61L27/06 ,  A61L27/365 ,  A61L27/50 ,  C23F1/30

摘要： Compositions and methods for etching a nanoscale geometry on a metal or metal alloy surface are disclosed. Such surfaces, when included on an implantable medical device, enhance healing after surgery. When included on a bone contacting medical implant, the nanoscale geometry may enhance osseointegration. When included on a tissue contacting device, the nanoscale geometry may enhance endothelial cell attachment, proliferation, and restoration of a healthy endothelial surface.

公开(公告)号：US11859293B1

公开(公告)日：2024-01-02

申请号：US17221808

申请日：2021-04-04

申请人： ELECTRIC MIRROR, LLC

发明人： James V. Mischel, Jr. ,  James V. Mischel, Sr.

IPC分类号： C23F1/30 ,  G09F9/00 ,  G09F13/12 ,  G09F19/14 ,  A47G1/02 ,  G02B27/10 ,  G02B27/01 ,  B24C1/00 ,  C03C17/00

CPC分类号： C23F1/30 ,  A47G1/02 ,  B24C1/00 ,  C03C17/00 ,  G02B27/0101 ,  G02B27/0149 ,  G02B27/1073 ,  G09F9/00 ,  G09F13/12 ,  G09F19/14 ,  G02B2027/0169 ,  Y10T29/49826 ,  Y10T29/49963

摘要： Methods to partially decrease reflectivities of at least two regions on a mirror platform relative to a reflectivity of a third region are taught. A first region is defined on a surface of the mirror platform. The first region is a media display device viewing area. A second region is defined on the surface of the mirror platform. The second region is a back lit area. A first material is selectively disposed onto a rear surface of the mirror platform outside of the first region and outside of the second region. The first material increases the reflectivity of the mirror platform outside of the first region and outside of the second region. When the mirror platform is viewed from a front side a reflectivity of a third region, which is outside of the first region and outside of the second region, is greater than a reflectivity of either the first region or the second region; and a reflectivity of the first region is different than a reflectivity of the second region.

公开(公告)号：US20230253211A1

公开(公告)日：2023-08-10

申请号：US18299850

申请日：2023-04-13

申请人： Texas Instruments Incorporated

发明人： Sebastian Meier ,  Helmut Rinck

IPC分类号： H01L21/306 ,  H01L21/308 ,  C23F1/44 ,  C23F1/30 ,  H01L21/24

CPC分类号： H01L21/30604 ,  H01L21/3081 ,  C23F1/44 ,  C23F1/30 ,  H01L21/244

摘要： There is provided a method of patterning platinum on a substrate. A platinum layer is deposited on the substrate, and a patterned photoresist layer is formed over the platinum layer leaving partly exposed regions of the platinum layer. An aluminum layer is deposited over the partly exposed regions of the platinum layer. An alloy is formed of aluminum with platinum from the partly exposed regions. The platinum aluminum alloy is etched away leaving a remaining portion of the platinum layer to form a patterned platinum layer on the substrate. In an embodiment, a thin hard mask layer is deposited on the platinum layer on the semiconductor substrate before the patterned photoresist layer is formed.

公开(公告)号：US20230121246A1

公开(公告)日：2023-04-20

申请号：US17986160

申请日：2022-11-14

申请人： Tokyo Electron Limited

发明人： Paul Abel

IPC分类号： C23F1/30

摘要： The present disclosure provides improved wet etch processes and methods for etching noble metals. More specifically, the present disclosure provides various embodiments of wet etch processes and methods that utilize new etch chemistries for etching noble metals, such as ruthenium (Ru), gold (Au), platinum (Pt) and iridium (Ir), in a wet etch process. In general, the disclosed embodiments expose a noble metal surface to a first etch solution to chemically modify the noble metal surface and form a noble metal salt passivation layer, which can then be selectively dissolved in a second etch solution to etch the noble metal surface.