VERTICAL CAVITY SURFACE EMITTING LASER DEVICE

    公开(公告)号:US20240128722A1

    公开(公告)日:2024-04-18

    申请号:US18275975

    申请日:2022-01-11

    IPC分类号: H01S5/183 H01S5/343

    摘要: [Object] To provide a vertical cavity surface emitting laser device having a concave mirror structure and excellent polarization controllability.
    [Solving Means] A vertical cavity surface emitting laser device according to the present technology includes: a first light-reflecting layer; a second light-reflecting layer; and a stacked body. The stacked body includes a first semiconductor layer, a second semiconductor layer, and an active layer, and is disposed between the first light-reflecting layer and the second light-reflecting layer. The stacked body has a current confinement structure for confining a current and forming a current injection region where a current concentrates. The first light-reflecting layer includes a concave mirror having a concave surface on a side of the stacked body and a convex surface on a side opposite to the stacked body. A first figure and a second figure are not similar, the first figure being a plane figure of the current injection region when viewed from an optical axis direction of emitted light, the second figure being a plane figure of a contour line when viewed from the optical axis direction, the contour line representing a height of the concave mirror from the active layer.

    MICRO-OPTICS ON VCSEL-BASED FLOOD ILLUMINATOR

    公开(公告)号:US20240088629A1

    公开(公告)日:2024-03-14

    申请号:US17931834

    申请日:2022-09-13

    摘要: A laser assembly, such as a flood illuminator, has laser (e.g., VCSEL) emitters on a substrate configured to emit optical signals. An optic structure of optically transparent material, such as a polymer, is formed directly on the substrate, and micro-optic elements are nano-imprinted on the optic structure. The micro-optic elements are arranged in optical communication with the optical signals emitted from the laser emitters to perform field mapping or other optical functions. The laser emitters are on the same surface of the substrate as the optic structure along with electrical contacts so forming the optic structure involves covering the electrical contacts with a protective layer, dispensing a polymer for the optic structure, cutting away portions of the optic structure, removing the remaining protective layer, and exposing the electrical contacts.

    SURFACE EMITTING LASER
    46.
    发明公开

    公开(公告)号:US20240088627A1

    公开(公告)日:2024-03-14

    申请号:US18272878

    申请日:2022-01-07

    发明人: Takahiro ARAKIDA

    IPC分类号: H01S5/30 H01S5/183 H01S5/32

    摘要: The present technology provides a surface emitting laser capable of reducing a voltage drop at a tunnel junction.
    The present technology provides a surface emitting laser including: first and second multilayer film reflectors (102, 112) laminated together; a plurality of active layers laminated together between the first and second multilayer film reflectors (102, 112); and a tunnel junction (107) disposed between first and second active layers (104, 110) adjacent to each other in a lamination direction among the plurality of active layers, in which the tunnel junction (107) includes an n-type semiconductor layer (107b) and a p-type semiconductor layer (107a) laminated together, and the p-type semiconductor layer (107a) includes first and second p-type semiconductor regions (107a1, 107a2) laminated together.

    Microcavity pixel array fabrication method

    公开(公告)号:US11925058B2

    公开(公告)日:2024-03-05

    申请号:US18154977

    申请日:2023-01-16

    摘要: A microcavity pixel design and structure allowing for tuning the optical cavity length of the microcavity of a microcavity pixel structure. This is achieved by including an intermediate electrode in the device which has an overhang region to form a connecting area to a bottom electrode, alleviating design restrictions in material type and dimensions throughout the optical microcavity tuning process. A method for the fabrication of a multi-colored microcavity pixel array facilitating the use of blanket deposition methods for select layers within a microcavity pixel structure.

    Surface emitting laser and method of manufacturing the same

    公开(公告)号:US11923661B2

    公开(公告)日:2024-03-05

    申请号:US17260876

    申请日:2019-06-14

    IPC分类号: H01S5/183 H01S5/227

    摘要: A method of manufacturing a surface emitting laser according to an embodiment of the present disclosure includes the following two steps:



    (1) a step of forming a semiconductor stacked structure on a substrate, the semiconductor stacked structure including an active layer, a first DBR layer of a first electrical conduction type, and a second DBR layer of a second electrical conduction type, the first DBR layer and the second DBR layer sandwiching the active layer, the second electrical conduction type being different from the first electrical conduction type; and
    (2) a step of forming a mesa section at a portion on the second DBR layer side in the semiconductor stacked structure and then forming an annular diffusion region of the first electrical conduction type at an outer edge of the mesa section by impurity diffusion from a side surface of the mesa section, the mesa section including the second DBR layer, the mesa section not including the active layer.

    LIGHT EMITTING DEVICE WITH DETEMINABLE SHAPE OF OUTPUT BEAM

    公开(公告)号:US20240072518A1

    公开(公告)日:2024-02-29

    申请号:US18107140

    申请日:2023-02-08

    申请人: Bandwidth10, LTD.

    IPC分类号: H01S5/30 H01S5/183

    摘要: A light emitting device has a first mirror; and one or more active regions with a first active region adjacent to the first mirror. Each of active region includes quantum wells and barriers, and is surrounded by one or more p-n junctions. The active regions have a selected shape structure each with a tunnel junction (TJ). One or more apertures are provided with the selected shape structure; one or more buried tunnel junctions (BTJ), additional TJ's, planar structures and/or additional BTJ's, created during a regrowth process that is independent of a first growth process of the first mirror as well as the active region and the one or more TJs. One or more electrical confinement apertures are defined by the one or more BTJ's, additional TJ's, planar structures and/or additional BTJ's. A vertical resonator cavity is disposed over the electrical confinement aperture. A high contrast grating (HCG) operates as a second mirror positioned over the vertical resonator cavity. The HCG is configured to reflect a first portion of light back into the vertical resonator cavity, and a second portion of the light as an output beam from the VCSEL. The HCG structure is layered on the selected shape structure. A shape of the output beam of the light emitting device is determined by a geometric shape of the one or more BTJ apertures, apertures for additional TJ's, planar structures and/or additional BTJ's, with a transmission function of the HCG. The shape is designed according to the desired optical transmission function of the application.