Method for DC plasma assisted chemical vapor deposition in the absence of a positive column
    551.
    发明授权
    Method for DC plasma assisted chemical vapor deposition in the absence of a positive column 有权
    在没有正性柱的情况下进行直流等离子体辅助化学气相沉积的方法

    公开(公告)号:US08334027B2

    公开(公告)日:2012-12-18

    申请号:US11833679

    申请日:2007-08-03

    CPC classification number: C23C16/503 C23C16/272 Y10T428/268

    Abstract: In the method for depositing a material in the absence of a positive column, a discharge is generated between a cathode and an anode disposed to face each other in a reaction chamber by applying a DC voltage therebetween, and introducing reaction gas into the reaction chamber, thereby depositing a material on a substrate mounted on the anode and serving as a part of the anode, wherein the deposition of the material on the substrate is performed under a state that a cathode glow and an anode glow exist in a form of thin layers coating respectively the surfaces of the cathode and the substrate, while a positive column does not exist or is so small as to be negligible.

    Abstract translation: 在不存在正极柱时沉积材料的方法中,通过在反应室中施加直流电压,在反应室内彼此面对的阴极和阳极之间产生放电,并将反应气体引入反应室, 从而将材料沉积在安装在阳极上并用作阳极的一部分的衬底上,其中材料在衬底上的沉积在阴极辉光和阳极辉光以薄层涂层形式存在的状态下进行 分别是阴极和衬底的表面,而正柱不存在或太小以致可以忽略。

    FABRICATION METHOD OF GRAPHENE-CONTROLLED NANO-GRAPHITE
    553.
    发明申请
    FABRICATION METHOD OF GRAPHENE-CONTROLLED NANO-GRAPHITE 审中-公开
    石墨控制纳米石墨的制造方法

    公开(公告)号:US20120295107A1

    公开(公告)日:2012-11-22

    申请号:US13475110

    申请日:2012-05-18

    Applicant: Jae Kap LEE

    Inventor: Jae Kap LEE

    Abstract: The present invention relates to a method of fabricating a carbon material and, more particularly, to a method for fabricating graphite having a nano-ribbon shape (hereinafter, referred to as a ‘graphene-controlled nano-graphite’) through a heat treatment of graphene nano-powders, and a graphene-controlled nano-graphite fabricated through the method. The method for fabricating graphene-controlled nano-graphite includes a preparation step of preparing graphene powders and a fabrication step of fabricating graphene-controlled nano-graphite through heat treatment of the graphene powders. The graphene powder may be fabricated by disintegrating crystalline graphite.

    Abstract translation: 本发明涉及一种制造碳材料的方法,更具体地说,涉及通过石墨烯纳米管的热处理制造具有纳米带状的石墨的方法(以下称为石墨烯控制的纳米石墨) 粉末和通过该方法制造的石墨烯控制的纳米石墨。 制造石墨烯控制的纳米石墨的方法包括制备石墨烯粉末的制备步骤和通过石墨烯粉末的热处理来制造石墨烯控制的纳米石墨的制造步骤。 石墨烯粉末可以通过分解结晶石墨来制造。

    High sensitivity localized surface plasmon resonance sensor and sensor system using same
    556.
    发明授权
    High sensitivity localized surface plasmon resonance sensor and sensor system using same 有权
    高灵敏度局部表面等离子体共振传感器和传感器系统

    公开(公告)号:US08298495B2

    公开(公告)日:2012-10-30

    申请号:US13334113

    申请日:2011-12-22

    CPC classification number: G01N21/554 B82Y15/00 B82Y20/00 G01N21/648 G01N21/658

    Abstract: The present invention relates to a high sensitivity localized surface plasmon resonance sensor and to a sensor system using same, the sensor comprising: a first metal layer including a first metal; a second metal layer arranged parallel to the first metal layer and including a second metal; and a conductive cross-linking layer disposed between the first metal layer and the second metal layer, and made of a third metal with a corrosion response that is different than that of the first metal and of the second metal.

    Abstract translation: 本发明涉及高灵敏度局部表面等离子体共振传感器和涉及使用它的传感器系统,该传感器包括:第一金属层,包括第一金属; 第二金属层,其平行于第一金属层布置并包括第二金属; 以及设置在第一金属层和第二金属层之间的导电交联层,并且由具有不同于第一金属和第二金属的腐蚀响应的第三金属制成。

    DDR2 PROTEIN WITH ACTIVATED KINASE ACTIVITY AND PREPARATION METHOD THEREOF
    558.
    发明申请
    DDR2 PROTEIN WITH ACTIVATED KINASE ACTIVITY AND PREPARATION METHOD THEREOF 审中-公开
    具有活性激酶活性的DDR2蛋白及其制备方法

    公开(公告)号:US20120270234A1

    公开(公告)日:2012-10-25

    申请号:US12987863

    申请日:2011-01-10

    Abstract: The present invention relates to a protein containing a modified DDR (Discoidin Domain Receptor) 2 cytosolic tyrosine kinase domain having an increased autophosphorylation and tyrosine kinase activity; a method for preparing a large amount of a protein containing DDR2 cytosolic tyrosine kinase domain, having an increased autophosphorylation and tyrosine kinase activity by inducing phosphorylations of tyrosines by a co-expression with Src or Src related proteins in host cells, or by H2O2 processing of host cells, or a site directed mutation modifying at least one of tyrosines to other amino acid; and a use thereof as a target material in developing medical drugs for treating a disease caused by an excessively activated DDR2 autophosphorylation and tyrosine kinase activity.

    Abstract translation: 本发明涉及含有增加的自磷酸化和酪氨酸激酶活性的修饰的DDR(盘带蛋白结构域受体)2胞质酪氨酸激酶结构域的蛋白质; 通过与宿主细胞中的Src或Src相关蛋白的共表达,或通过H 2 O 2处理,通过诱导酪氨酸的磷酸化,具有增加的自磷酸化和酪氨酸激酶活性的DDR2胞质酪氨酸激酶结构域的蛋白质的制备方法 宿主细胞或将至少一种酪氨酸修饰至其它氨基酸的位点定向突变; 以及其用作开发用于治疗由过度活化的DDR2自磷酸化和酪氨酸激酶活性引起的疾病的药物的目标材料。

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