公开(公告)号：US06954077B2

公开(公告)日：2005-10-11

申请号：US10495774

申请日：2003-01-31

Applicant: Eric J. Strang

Inventor： Eric J. Strang

IPC: G01R27/04 ,  G03G15/00 ,  H01J37/32 ,  H01P7/06

CPC classification number: H01J37/32935 ,  H01J37/32192 ,  H01J37/32275 ,  H01J37/3299

Abstract: An equipment status monitoring system (10) and method of operating includes first (40) and second (50) microwave mirrors in a plasma processing chamber (20) each forming a multi-modal resonator. A power source (60) is coupled to the first mirror (40) and configured to produce an excitation signal. A detector (70) is coupled to at least one of the first mirror (40) and the second mirror (50) and configured to measure an excitation signal. At least one of the power source (60) and the detector (70) is coupled to a divergent aperture (44).

Abstract translation: 设备状态监测系统（10）和操作方法包括等离子体处理室（20）中的每个形成多模共振器的第一（40）和第二（50）微波反射镜。 电源（60）耦合到第一反射镜（40）并且被配置为产生激励信号。 检测器（70）耦合到第一反射镜（40）和第二反射镜（50）中的至少一个并被配置成测量激励信号。 电源（60）和检测器（70）中的至少一个耦合到发散孔（44）。

公开(公告)号：US06949722B2

公开(公告)日：2005-09-27

申请号：US10630783

申请日：2003-07-31

Applicant: Eric J. Strang ,  Wayne L. Johnson

Inventor： Eric J. Strang ,  Wayne L. Johnson

IPC: H01L21/26 ,  H01L21/00 ,  H01L21/687 ,  H05B3/68

CPC classification number: H01L21/68757 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/68785

Abstract: A method and an apparatus utilized for thermal processing of substrates during semiconductor manufacturing. The method includes heating the substrate to a predetermined temperature using a heating assembly, cooling the substrate to the predetermined temperature using a cooling assembly located such that a thermal conductance region is provided between the heating and cooling assemblies, and adjusting a thermal conductance of the thermal conductance region to aid in heating and cooling of the substrate. The apparatus includes a heating assembly, a cooling assembly located such that a thermal conductance region is provided between the heating and cooling assemblies, and a structure or configuration for adjusting a thermal conductance of the thermal conductance region.

公开(公告)号：US06806949B2

公开(公告)日：2004-10-19

申请号：US10331349

申请日：2002-12-31

Applicant: Audunn Ludviksson ,  Eric J. Strang

Inventor： Audunn Ludviksson ,  Eric J. Strang

IPC: G01N2100

CPC classification number: G01N21/68 ,  G01N21/64

Abstract: A method and system are provided for monitoring material buildup on system components in a plasma processing system. The system components contain emitters that are capable of producing characteristic fluorescent light emission when exposed to a plasma. The method utilizes optical emission to monitor fluorescent light emission from the emitters for determining system component status. The method can evaluate material buildup on system components in a plasma, by monitoring fluorescent light emission from the emitters. Consumable system components that can be monitored using the method include rings, shields, electrodes, baffles, and liners.

公开(公告)号：US20120083127A1

公开(公告)日：2012-04-05

申请号：US12895507

申请日：2010-09-30

Applicant: Robert D. Clark ,  Eric J. Strang

Inventor： Robert D. Clark ,  Eric J. Strang

IPC: H01L21/302

CPC classification number: H01L21/02238 ,  B81C1/00031 ,  H01L21/02247 ,  H01L21/02249 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/31116 ,  H01L29/66795

Abstract: A method for forming a fine pattern on a substrate includes providing a substrate including a material with an initial pattern formed thereon and having a first line width, performing a self-limiting oxidation and/or nitridation process on a surface of the material and thereby forming an oxide, a nitride, or an oxynitride film on a surface of the initial pattern, and removing the oxide, nitride, or oxynitride film. The method further includes repeating the formation and removal of the oxide, nitride, or oxynitride film to form a second pattern having a second line width that is smaller than the first line width of the initial pattern. The patterned material can contain silicon, a silicon-containing material, a metal, or a metal-nitride, and the self-limiting oxidation process can include exposure to vapor phase ozone, atomic oxygen generated by non-ionizing electromagnetic (EM) radiation, atomic nitrogen generated by ionizing or non-ionizing EM radiation, or a combination thereof.

Abstract translation: 在基板上形成精细图案的方法包括：提供包括具有形成在其上的初始图案的材料并具有第一线宽的基板，在所述材料的表面上进行自限制氧化和/或氮化处理，从而形成 在初始图案的表面上的氧化物，氮化物或氧氮化物膜，以及除去氧化物，氮化物或氧氮化物膜。 该方法还包括重复形成和去除氧化物，氮化物或氧氮化物膜以形成具有小于初始图案的第一线宽的第二线宽的第二图案。 图案化材料可以含有硅，含硅材料，金属或金属氮化物，并且自限制氧化工艺可以包括暴露于气相臭氧，由非电离电磁（EM）辐射产生的原子氧， 通过电离或非电离EM辐射产生的原子氮或其组合。

公开(公告)号：US08038834B2

公开(公告)日：2011-10-18

申请号：US12754662

申请日：2010-04-06

Applicant: Merritt Funk ,  David V. Horak ,  Eric J. Strang ,  Lee Chen

Inventor： Merritt Funk ,  David V. Horak ,  Eric J. Strang ,  Lee Chen

IPC: H01L21/3065 ,  C23C16/00 ,  C23C16/455 ,  C23C16/50

CPC classification number: C23C16/4412 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834

Abstract: A plasma processing system includes a processing chamber, a substrate holder configured to hold a substrate for plasma processing, and a gas injection assembly. The gas injection assembly includes a first evacuation port located substantially in a center of the gas injection assembly and configured to evacuate gases from a central region of the substrate, and a gas injection system configured to inject gases in the process chamber. The plasma processing system also includes a second evacuation port configured to evacuate gases from a peripheral region surrounding the central region of the substrate.

Abstract translation: 等离子体处理系统包括处理室，被配置为保持用于等离子体处理的基板的基板保持器和气体注入组件。 气体注入组件包括基本上位于气体注入组件的中心并且构造成从衬底的中心区域排出气体的第一排气口，以及构造成在处理室中注入气体的气体注入系统。 等离子体处理系统还包括构造成从围绕衬底的中心区域的周边区域排出气体的第二排气口。

公开(公告)号：US08032348B2

公开(公告)日：2011-10-04

申请号：US10673138

申请日：2003-09-30

Applicant: Andrej S. Mitrovic ,  Eric J. Strang

Inventor： Andrej S. Mitrovic ,  Eric J. Strang

IPC: G06F17/50 ,  G06G7/48 ,  G06F19/00 ,  H01L21/00

CPC classification number: G06F17/5009 ,  G06F2217/16

Abstract: A method, system and computer readable medium for facilitating a process performed by a semiconductor processing tool. The method includes inputting data relating to a process performed by the semiconductor processing tool and inputting a first principles physical model relating to the semiconductor processing tool. First principles simulation is then performed using the input data and the physical model to provide a first principles simulation result, and the first principles simulation result is used to facilitate the process performed by the semiconductor processing tool.

Abstract translation: 一种用于促进由半导体处理工具执行的处理的方法，系统和计算机可读介质。 该方法包括输入与半导体处理工具执行的处理有关的数据，并输入与半导体处理工具相关的第一原理物理模型。 然后使用输入数据和物理模型执行第一原理模拟以提供第一原理模拟结果，并且第一原理模拟结果用于促进由半导体处理工具执行的处理。

公开(公告)号：US07850782B2

公开(公告)日：2010-12-14

申请号：US11961355

申请日：2007-12-20

Applicant: Steven T. Fink ,  Eric J. Strang

Inventor： Steven T. Fink ,  Eric J. Strang

IPC: C23C16/00 ,  C23C16/46

Abstract: A thermally zoned substrate holder including a substantially cylindrical base having top and bottom surfaces configured to support a substrate. A plurality of temperature control elements are disposed within the base. An insulator thermally separates the temperature control elements. The insulator is made from an insulting material having a lower coefficient of thermal conductivity than the base (e.g., a gas- or vacuum-filled chamber).

公开(公告)号：US07723648B2

公开(公告)日：2010-05-25

申请号：US11525815

申请日：2006-09-25

Applicant: Yuji Tsukamoto ,  Eric J. Strang

Inventor： Yuji Tsukamoto ,  Eric J. Strang

IPC: H05B3/68 ,  F27B5/14

CPC classification number: F27D5/0037 ,  C23C16/4586 ,  C23C16/46 ,  H01J2237/2001 ,  H01L21/67103

Abstract: A substrate holder for supporting a substrate in a processing system includes a temperature controlled support base having a first temperature, and a substrate support opposing the temperature controlled support base and configured to support the substrate. Also included is one or more heating elements coupled to the substrate support and configured to heat the substrate support to a second temperature above the first temperature, and a thermal insulator disposed between the temperature controlled support base and the substrate support. The thermal insulator includes a non-uniform spatial variation of the heat transfer coefficient (W/m2-K) through the thermal insulator between the temperature controlled support base and the substrate support.

Abstract translation: 用于在处理系统中支撑衬底的衬底保持器包括具有第一温度的温度控制的支撑基座和与温度受控的支撑基座相对并且被配置为支撑衬底的衬底支撑件。 还包括一个或多个加热元件，其耦合到衬底支撑件并且被配置为将衬底支撑件加热到高于第一温度的第二温度，以及设置在温度受控支撑基底和衬底支撑件之间的热绝缘体。 热绝缘体包括通过温度控制的支撑基底和基底支撑件之间的热绝缘体的传热系数（W / m 2 -K）的不均匀的空间变化。

公开(公告)号：US07666479B2

公开(公告)日：2010-02-23

申请号：US11746779

申请日：2007-05-10

Applicant: Eric J. Strang

Inventor： Eric J. Strang

IPC: C23C16/455 ,  C23C16/52 ,  C23F1/00 ,  H01L21/306 ,  H05H1/24 ,  C23C16/06 ,  C23C16/22

CPC classification number: C23C16/45523 ,  C23C16/45574 ,  H01J37/3244 ,  Y10T137/0318 ,  Y10T137/0324

Abstract: An apparatus and method for gas injection sequencing in order to increase the gas injection total pressure while satisfying an upper limit to the process gas flow rate, thereby achieving gas flow uniformity during a sequence cycle and employing practical orifice configurations. The gas injection system includes a gas injection electrode having a plurality of regions, through which process gas flows into the process chamber. The gas injection system further includes a plurality of gas injection plenums, each independently coupled to one of the aforesaid regions and a plurality of gas valves having an inlet end and an outlet end, where the outlet end is independently coupled to one of the aforesaid plurality of gas injection plenums. The gas injection system includes a controller coupled to the plurality of gas valves for sequencing the flow of process gas through the aforesaid plurality of regions.

Abstract translation: 一种用于气体喷射排序的装置和方法，以便在满足工艺气体流量的上限的同时增加气体注入总压力，从而在顺序循环期间实现气流均匀性并采用实用的孔结构。 气体注入系统包括具有多个区域的气体注入电极，工艺气体通过该多个区域流入处理室。 气体注入系统还包括多个气体注入气室，每个气体注入气室各自独立地连接到前述区域中的一个区域，以及具有入口端和出口端的多个气体阀，其中出口端独立地与上述多个 的气体注入气室。 气体注入系统包括耦合到多个气体阀的控制器，用于对通过前述多个区域的处理气体的流动进行排序。

公开(公告)号：US07482757B2

公开(公告)日：2009-01-27

申请号：US10472553

申请日：2002-03-25

Applicant: Bill H. Quon ,  Jovan Jevtic ,  Sam Antley ,  Eric J. Strang

Inventor： Bill H. Quon ,  Jovan Jevtic ,  Sam Antley ,  Eric J. Strang

IPC: H01J7/24

CPC classification number: H01J37/321 ,  H01J37/32357 ,  H01J37/3266

Abstract: A high-density plasma source (100) is disclosed. The source includes an annular insulating body (300) with an annular cavity (316) formed within. An inductor coil (340) serving as an antenna is arranged within the annular cavity and is operable to generate a first magnetic field within a plasma duct (60) interior region (72) and inductively couple to the plasma when the annular body is arranged to surround a portion of the plasma duct. A grounded conductive housing (400) surrounds the annular insulating body. An electrostatic shield (360) is arranged adjacent the inner surface of the insulating body and is grounded to the conductive housing. Upper and lower magnet rings (422 and 424) are preferably arranged adjacent the upper and lower surfaces of the annular insulating body outside of the conductive housing. A T-match network is in electrical communication with said inductor coil and is adapted to provide for efficient transfer of RF power from an RF power source to the plasma. At least one plasma source can be used to form a high-density plasma suitable for plasma processing of a workpiece residing in a plasma chamber in communication with the at least one source.

Abstract translation: 公开了一种高密度等离子体源（100）。 源包括环形绝缘体（300），其内部形成有环形空腔（316）。 用作天线的电感线圈（340）布置在环形空腔内，并且可操作以在等离子体管道（60）内部区域（72）内产生第一磁场，并且当环形体布置成 围绕等离子体管道的一部分。 接地导电壳体（400）围绕环形绝缘体。 静电屏蔽（360）被布置成邻近绝缘体的内表面并且被接地到导电壳体。 上，下磁环（422和424）优选地布置成邻近导电外壳外的环形绝缘体的上表面和下表面。 T匹配网络与所述电感器线圈电连通，并且适于提供从RF功率源到等离子体的RF功率的有效传输。 可以使用至少一个等离子体源来形成适于等离子体处理高密度等离子体处理的工件，该工件位于与至少一个源连通的等离子体室中。