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51.发明授权Production of a semiconductor device having at least one column-shaped or wall-shaped semiconductor element 有权制造具有至少一个柱状或壁状半导体元件的半导体器件公开(公告)号：US09184235B2
公开(公告)日：2015-11-10
申请号：US14357583
申请日：2012-11-09
发明人： Oliver Brandt , Lutz Geelhaar , Vladimir Kaganer , Martin Woelz
IPC分类号： H01L21/00 , H01L29/06 , H01L27/15 , H01L31/109 , H01L29/12 , H01L33/18 , H01L29/04 , H01L29/16 , H01L29/20 , H01L31/0352 , H01L33/06
CPC分类号： H01L29/122 , H01L29/04 , H01L29/16 , H01L29/20 , H01L29/2003 , H01L31/035209 , H01L33/06 , H01L33/18 , H01L2924/0002 , H01L2924/00
摘要： Described is a method for producing a semiconductor device (100), in which at least one column-shaped or wall-shaped semiconductor device (10, 20) extending in a main direction (z) is formed on a substrate (30), wherein at least two sections (11, 13, 21, 23) of a first crystal type and one section (12, 22) of a second crystal type therebetween are formed in an active region (40), each section with a respective predetermined height (h1, h2), wherein the first and second crystal types have different lattice constants and each of the sections of the first crystal type has a lattice strain which depends on the lattice constants in the section of the second crystal type. According to the invention, at least a height (h2) of the section (12, 22) of the second crystal type and a lateral thickness (D) of the active region (40) is formed perpendicular to the main direction, in such a manner that the lattice strain in one of the sections (11) of the first crystal type also depends on the lattice constants in the other section (13) of the first crystal type. A semiconductor device (100) is also described, having at least one column-shaped or wall-shaped semiconductor element (10, 20) on a substrate (30), which can be produced in particular by means of the stated method.
摘要翻译： 描述了一种半导体器件（100）的制造方法，其中在基板（30）上形成有沿主方向（z）延伸的至少一个柱状或壁状半导体器件（10,20），其中 在有源区域（40）中形成有第一晶体类型的至少两个部分（11,13,21,23）和第二晶体类型的一个部分（12,22），每个部分具有相应的预定高度 h1，h2），其中第一和第二晶体类型具有不同的晶格常数，并且第一晶体类型的每个部分具有取决于第二晶体类型的截面中的晶格常数的晶格应变。 根据本发明，垂直于主方向形成第二晶体类型的部分（12,22）和有源区（40）的横向厚度（D）的至少高度（h2） 第一晶体类型的部分（11）之一的晶格应变也取决于第一晶体类型的另一部分（13）中的晶格常数。 还描述了一种半导体器件（100），其在衬底（30）上具有至少一个柱状或壁状半导体元件（10,20），其特别可以通过所述方法制造。
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公开(公告)号：US20150219906A1
公开(公告)日：2015-08-06
申请号：US14427437
申请日：2013-09-12
发明人： Martin Maiwald , Bernd Sumpf
CPC分类号： G02B27/1006 , G01J3/427 , G01J3/44 , G01J2003/4424 , G01N21/65 , G01N2021/399 , G01N2201/0221 , G01N2201/024 , G02B27/09 , G02B27/1086 , G02B27/141
摘要： The invention relates to a device (122) having an arrangement of optical elements comprising excitation light sources (101, 115) for generating individual light beams (102, 116) having different wavelengths for exciting a sample in such a way that light scattered back from the sample as a result of the excitation is made available to a Raman spectroscopic analysis. The device (122) comprises deflection devices (103, 117) associated with the individual light beams (102, 116) for deflecting the individual light beams (102, 116) onto a common light path, wherein the common light path comprises a same optical system (109) for focusing the light beams (102, 116).
摘要翻译： 本发明涉及一种具有光学元件布置的装置（122），该装置包括用于产生具有不同波长的单个光束（102,116）的激发光源（102,116），用于激发样品，使得从 作为激发结果的样品可用于拉曼光谱分析。 装置（122）包括与单个光束（102,116）相关联的偏转装置（103,117），用于将各个光束（102,116）偏转到公共光路上，其中，公共光路包括相同的光 系统（109），用于聚焦光束（102,116）。
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53.发明申请公开(公告)号：US20130128911A1
公开(公告)日：2013-05-23
申请号：US13682848
申请日：2012-11-21
发明人： Olaf BROX , Frank Bugge , Paul Crump , Goetz Erbert , Andre Maassdorf , Christoph M. Schultz , Hans Wenzel , Markus Weyers
CPC分类号： H01L33/10 , H01L33/005 , H01S5/1231 , H01S5/187 , H01S5/32316 , H01S2304/00
摘要： A diode laser having aluminum-containing layers and a Bragg grating for stabilizing the emission wavelength achieves an improved output/efficiency. The growth process is divided into two steps for introducing the Bragg grating, wherein a continuous aluminum-free layer and an aluminum-free mask layer are continuously deposited after the first growth process such that the aluminum-containing layer is completely covered by the continuous aluminum-free layer. Structuring is performed outside the reactor without unwanted oxidation of the aluminum-containing semiconductor layer. Subsequently, the pre-structured semiconductor surface is further etched inside the reactor and the structuring is impressed into the aluminum-containing layer. In this process, so little oxygen is inserted into the semiconductor crystal of the aluminum-containing layers in the environment of the grating that output and efficiency of a diode laser are not reduced as compared to a diode laser without grating layers that was produced in an epitaxy step.
摘要翻译： 具有含铝层的二极管激光器和用于稳定发射波长的布拉格光栅实现了改进的输出/效率。 生长过程分为引入布拉格光栅的两个步骤，其中连续的无铝层和不含铝的掩模层在第一生长工艺之后连续沉积，使得含铝层被连续的铝完全覆盖 - 自由层。 在反应器外部进行结构化，而不含有铝氧化半导体层。 随后，在反应器内进一步蚀刻预构造的半导体表面，并将构造施加到含铝层中。 在这个过程中，在光栅的环境中少量的氧被插入到含铝层的半导体晶体中，与不产生光栅层的二极管激光器相比，二极管激光器的输出和效率没有降低 外延步骤
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公开(公告)号：US20240044044A1
公开(公告)日：2024-02-08
申请号：US18363366
申请日：2023-08-01
CPC分类号： C30B29/36 , C30B29/403 , C30B23/002
摘要： The invention relates to a crystal growth device for growing a semiconductor from a gas phase, the crystal growth device comprising, a crucible, a heater, and a holding plate. The crucible on a crucible vessel and a crucible lid supported on the crucible vessel, wherein the crucible vessel is configured to receive and hold a source material for the semiconductor during growth of the semiconductor. The heater is configured and arranged to heat the source material in the crucible vessel so that the source material at least partially changes to its gaseous phase and flows toward the crucible lid. The holding plate is configured to hold a seed crystal on a side of the holding plate facing the crucible lid, and to allow deposition of the source material that has changed into its gas phase on the seed crystal for growing the semiconductor. The holding plate is further configured to be spaced from a crucible bottom of the crucible vessel for growing the semiconductor, such that it is located between the source material and the crucible lid.
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公开(公告)号：US11572384B2
公开(公告)日：2023-02-07
申请号：US16096787
申请日：2017-04-27
摘要： The present invention provides means and methods for functionalizing a polypeptide of interest at its C-terminus with an amino acid derivative.
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公开(公告)号：US20220193251A1
公开(公告)日：2022-06-23
申请号：US17559664
申请日：2021-12-22
发明人： Heinrich LEONHARDT , Jonas HELMA-SMETS , Dominik SCHUMACHER , Marcus GERLACH , Christian PR HACKENBERGER , Marc-André KASPER
IPC分类号： A61K47/68
摘要： The present invention relates to an antibody-drug conjugate (ADC) comprising: (a) Brentuximab, wherein Brentuximab comprises at the C-terminus of the light chains, the heavy chains or all of the heavy and light chains of the Brentuximab a recognition sequence for tubulin tyrosine ligase and a non-natural amino acid; and (b) at least one drug moiety; wherein a drug moiety is coupled to each of the non-natural amino acids via a linker. The present invention further relates to methods of producing same, pharmaceutical compositions comprising same as well as uses thereof.
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公开(公告)号：US10794766B2
公开(公告)日：2020-10-06
申请号：US16313668
申请日：2017-06-23
发明人： Bernd Sumpf , Martin Maiwald
摘要： Raman spectroscopy methods and devices are disclosed.The method includes irradiation of excitation radiation onto a sample to be examined. The sample is irradiated with a first excitation radiation of a first excitation wavelength and a different second excitation radiation of a second excitation wavelength. The first excitation radiation scattered by the sample is wavelength-selective filtered by means of a passive filter element. A transmitted filter wavelength of the filter element differs from at least the first excitation wavelength and the second excitation wavelength. A first intensity is determined through a single-channel detector assigned to the filter wavelength from the first excitation radiation scattered and filtered by the sample. Additionally, the filter element wavelength-selective filters the second excitation radiation scattered by the sample. A second intensity is determined through the single-channel detector assigned to the filter wavelength from the second excitation radiation scattered and filtered by the sample.
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公开(公告)号：US10745437B2
公开(公告)日：2020-08-18
申请号：US16225522
申请日：2018-12-19
摘要： The present invention provides means and methods for equipping a polypeptide of interest at its C-terminus with a versatile adaptor amino acid that allows the functionalization of the polypeptide of interest.
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59.发明授权公开(公告)号：US10683309B2
公开(公告)日：2020-06-16
申请号：US16320723
申请日：2017-07-27
发明人： Michael Bader , Edgar Specker , Susann Matthes , Anja Schütz , Keven Mallow , Maik Grohmann , Marc Nazaré
IPC分类号： C07D519/00
摘要： The invention relates to a xanthine derivative defined by chemical formula I or a salt thereof, its use as a medicament, especially for use in the treatment of serotonin-related diseases or disorders, and a pharmaceutical preparation comprising the xanthine derivative. The novel xanthine compounds are capable of inhibiting tryptophan hydroxylases (TPH) involved in the biosynthesis of serotonin and are effective in influencing the serotonin level in the body.
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60.发明申请公开(公告)号：US20200059209A1
公开(公告)日：2020-02-20
申请号：US16498990
申请日：2018-03-13
发明人： Thomas Hoffmann
摘要： A device (100) for driving a self-conducting n-channel output stage field effect transistor (V1) comprising a control signal input (110), a control signal output (120) for connection to a gate electrode (V1G) of the output stage field effect transistor (V1), a first node (N1) connected to the control signal output (120), a second node (N2), and a first transistor (V4). A source electrode (V4S) of the first transistor (V4) is connected to the first node (N1), a gate electrode (V4G) of the first transistor (V4) is connected to the second node (N2) and a drain electrode (V4D) of the first transistor (V4) is either connected to the source electrode of the output field effect transistor (V1) or connected to a supply voltage (+Vdd). A resistor (R1) is connected with one end to the second node (N2). The device (100) is characterized in that the resistor (R1) is connected at the other end to the first node (N1).The first transistor (V4) can be used to cause the supply voltage (Vdd) to be applied to the control signal output when a low-level signal is applied to the control signal input (110).
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