公开(公告)号：US09818824B2

公开(公告)日：2017-11-14

申请号：US14968049

申请日：2015-12-14

Applicant: Moon Seung Yang ,  Eun Hye Choi ,  Sun Jung Kim ,  Seung Hun Lee ,  Hyun-Jung Lee

Inventor： Moon Seung Yang ,  Eun Hye Choi ,  Sun Jung Kim ,  Seung Hun Lee ,  Hyun-Jung Lee

IPC: H01L29/161 ,  H01L29/10 ,  H01L29/78 ,  H01L21/02

CPC classification number: H01L29/1054 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02532 ,  H01L29/161 ,  H01L29/78 ,  H01L29/7848 ,  H01L29/785

Abstract: A semiconductor substrate and a semiconductor device are provided. The semiconductor substrate includes a base substrate, a first silicon germanium layer on the base substrate and a second silicon germanium layer on the first silicon germanium layer. A germanium fraction of the second silicon germanium layer decreases in the direction away from the base substrate, and a germanium fraction of a lowermost part of the second silicon germanium layer is greater than a germanium fraction of an uppermost part of the first silicon germanium layer.

公开(公告)号：US20160104775A1

公开(公告)日：2016-04-14

申请号：US14826174

申请日：2015-08-13

Applicant: JONGRYEOL YOO ,  HYUN JUNG LEE ,  SUNJUNG KIM ,  SEUNG HUN LEE ,  Eunhye CHOI

Inventor： JONGRYEOL YOO ,  HYUN JUNG LEE ,  SUNJUNG KIM ,  SEUNG HUN LEE ,  Eunhye CHOI

IPC: H01L29/10 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/165 ,  H01L27/088

CPC classification number: H01L29/1054 ,  H01L21/823412 ,  H01L21/823814 ,  H01L27/088 ,  H01L27/0886 ,  H01L27/092 ,  H01L27/0924 ,  H01L29/165 ,  H01L29/7849

Abstract: A semiconductor device includes a buffer layer on a semiconductor substrate including first and second regions, a first channel layer on the buffer layer of the first region, a second channel layer on the buffer layer of the second region, and a spacer layer between the second channel layer and the buffer layer. The buffer layer, the first and second channel layers, and the spacer layer are formed of semiconductor materials including germanium. A germanium concentration difference between the first and second channel layers is greater than a germanium concentration difference between the buffer layer and the second channel layer. The spacer layer has a germanium concentration gradient.

Abstract translation: 半导体器件包括在半导体衬底上的包括第一和第二区域的缓冲层，第一区域的缓冲层上的第一沟道层，第二区域的缓冲层上的第二沟道层以及第二区域之间的间隔层 通道层和缓冲层。 缓冲层，第一和第二沟道层以及间隔层由包括锗的半导体材料形成。 第一和第二沟道层之间的锗浓度差大于缓冲层和第二沟道层之间的锗浓度差。 间隔层具有锗浓度梯度。

公开(公告)号：US20160005852A1

公开(公告)日：2016-01-07

申请号：US14690575

申请日：2015-04-20

Applicant: Sung-Min Kim ,  Kyung-Seok Oh ,  Cheol Kim ,  Heon-Jong Shin ,  Jong-Ryeol Yoo ,  Hyun-Jung Lee ,  Seong-Hoon Jeong

Inventor： Sung-Min Kim ,  Kyung-Seok Oh ,  Cheol Kim ,  Heon-Jong Shin ,  Jong-Ryeol Yoo ,  Hyun-Jung Lee ,  Seong-Hoon Jeong

IPC: H01L29/78 ,  H01L29/40 ,  H01L29/06

CPC classification number: H01L29/785 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/42392 ,  H01L29/66795

Abstract: Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a lower fin that protrudes from a substrate and extends in a first direction, an oxide film the lower fin, an upper fin that protrudes from the oxide film and that is spaced apart from the lower fin at a position corresponding to the lower fin, and a gate structure the upper fin that extends in a second direction to intersect the upper fin, wherein germanium (Ge) is included in a portion of the oxide film located between the lower fin and the upper fin.

Abstract translation: 提供一种半导体器件及其制造方法。 半导体器件包括从基板突出并沿第一方向延伸的下翅片，下鳍片上的氧化膜，从氧化膜突出并与下翅片间隔开的上翅片， 下翅片和栅极结构，上翅片沿第二方向延伸以与上翅片相交，其中锗（Ge）包括在位于下翅片和上翅片之间的氧化膜的一部分中。

公开(公告)号：US09025913B2

公开(公告)日：2015-05-05

申请号：US14111589

申请日：2012-04-13

Applicant: Geon Cheon Lee ,  Hyun Jung Lee

Inventor： Geon Cheon Lee ,  Hyun Jung Lee

IPC: G02B6/12 ,  G02B6/42 ,  G02B6/43 ,  H05K1/02

CPC classification number: G02B6/12 ,  G02B6/42 ,  G02B6/428 ,  G02B6/43 ,  H05K1/0274 ,  Y10T29/49165

Abstract: An interposer for an optical module includes a first substrate having an optical device mounting part on which an optical device is mounted, and a second substrate including a connection via electrically connected to a terminal pattern of the optical device mounting part. The first and second substrates are coupled with each other while forming a predetermined inclination angle therebetween.

Abstract translation: 一种用于光学模块的插入器包括具有光学装置安装部分的第一基板，光学装置安装在该第一基板上，第二基板包括电连接到光学装置安装部分的端子图案的连接。 第一和第二基板彼此耦合，同时形成预定的倾斜角。

公开(公告)号：US20150061134A1

公开(公告)日：2015-03-05

申请号：US14290620

申请日：2014-05-29

Applicant: EUN-OK LEE ,  NAM-GUN KIM ,  GYUHWAN OH ,  HEESOOK PARK ,  HYUN-JUNG LEE ,  KYUNGHO JANG

Inventor： EUN-OK LEE ,  NAM-GUN KIM ,  GYUHWAN OH ,  HEESOOK PARK ,  HYUN-JUNG LEE ,  KYUNGHO JANG

IPC: H01L23/532

CPC classification number: H01L23/5329 ,  H01L21/764 ,  H01L21/7682 ,  H01L21/76831 ,  H01L21/76889 ,  H01L21/76895 ,  H01L21/76897 ,  H01L23/53209 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10855 ,  H01L27/10876 ,  H01L27/10888 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A spacer covering a sidewall of a contact plug includes a relatively more damaged first portion and a relatively less damaged second portion. An interface of the first and second portions of the spacer is spaced apart from a metal silicide layer of the contact plug. Thus reliability of the semiconductor device may be improved. Related fabrication methods are also described.

Abstract translation: 覆盖接触塞的侧壁的间隔件包括相对更受损的第一部分和相对较少受损的第二部分。 间隔物的第一和第二部分的界面与接触塞的金属硅化物层间隔开。 因此，可以提高半导体器件的可靠性。 还描述了相关的制造方法。

公开(公告)号：US08866137B2

公开(公告)日：2014-10-21

申请号：US13365704

申请日：2012-02-03

Applicant: Jin-Won Lee ,  Woo Geun Lee ,  Kap Soo Yoon ,  Ki-Won Kim ,  Hyun-Jung Lee ,  Hee-Jun Byeon ,  Ji-Soo Oh

Inventor： Jin-Won Lee ,  Woo Geun Lee ,  Kap Soo Yoon ,  Ki-Won Kim ,  Hyun-Jung Lee ,  Hee-Jun Byeon ,  Ji-Soo Oh

IPC: H01L29/12 ,  H01L27/12 ,  H01L29/417

CPC classification number: H01L27/1225 ,  H01L29/41733

Abstract: A thin film transistor array panel includes: a gate electrode disposed on an insulation substrate; a gate insulating layer disposed on the gate electrode; a first electrode and an oxide semiconductor disposed directly on the gate insulating layer; a source electrode and a drain electrode formed on the oxide semiconductor; a passivation layer disposed on the first electrode, the source electrode, and the drain electrode; and a second electrode disposed on the passivation layer.

Abstract translation: 薄膜晶体管阵列面板包括：设置在绝缘基板上的栅电极; 设置在栅电极上的栅极绝缘层; 直接设置在栅极绝缘层上的第一电极和氧化物半导体; 形成在所述氧化物半导体上的源电极和漏电极; 设置在所述第一电极，所述源电极和所述漏电极上的钝化层; 以及设置在钝化层上的第二电极。

公开(公告)号：US08633078B2

公开(公告)日：2014-01-21

申请号：US13240470

申请日：2011-09-22

Applicant: Kwan-Yong Lim ,  Chung-Geun Koh ,  Sang-Bom Kang ,  Ui-Hui Kwon ,  Hyun-Jung Lee ,  Tae-Ouk Kwon ,  Seok-Hoon Kim

Inventor： Kwan-Yong Lim ,  Chung-Geun Koh ,  Sang-Bom Kang ,  Ui-Hui Kwon ,  Hyun-Jung Lee ,  Tae-Ouk Kwon ,  Seok-Hoon Kim

IPC: H01L21/336

CPC classification number: H01L29/66659 ,  H01L21/26506 ,  H01L21/26586 ,  H01L29/6659 ,  H01L29/7835 ,  H01L29/7847

Abstract: A semiconductor device is formed with a gate pattern formed on a substrate, and a recrystallized region having a stacking fault defect in the substrate at one side of the gate pattern. The semiconductor device can have a reduced leakage current and improved channel conductivity.

Abstract translation: 半导体器件形成有形成在衬底上的栅极图案，以及在栅极图案一侧的衬底中具有层叠缺陷缺陷的再结晶区域。 半导体器件可以具有减小的漏电流和改善的沟道导电性。

公开(公告)号：US20130334290A1

公开(公告)日：2013-12-19

申请号：US13592051

申请日：2012-08-22

Applicant: Young Ju LEE ,  Yun Bog KIM ,  Seon Young MYOUNG ,  Suk Jin HAM ,  Seong Chan PARK ,  Hyun Jung LEE

Inventor： Young Ju LEE ,  Yun Bog KIM ,  Seon Young MYOUNG ,  Suk Jin HAM ,  Seong Chan PARK ,  Hyun Jung LEE

IPC: B23K3/053 ,  B23K1/00

CPC classification number: B23K3/0623

Abstract: Disclosed herein is a solder paste droplet ejection apparatus including: a nozzle cap forming an appearance and including a heating electric wire provided inside thereof; a nozzle unit formed inside the nozzle cap, spaced apart from the nozzle cap, and surrounded by the nozzle cap; an ejection probe formed inside the nozzle unit, spaced apart from the nozzle unit, and surrounded by the nozzle unit; and a transfer unit formed in a top portion of the nozzle cap and used for a minute movement, wherein a solder paste supplied in a space between the nozzle unit and the ejection probe is ejected in a droplet shape along the ejection probe.

Abstract translation: 这里公开了一种焊锡膏液滴喷射装置，其包括形成外观的喷嘴帽，并且包括设置在其内部的加热电线; 喷嘴单元，其形成在所述喷嘴盖的内部，与所述喷嘴帽间隔开并且被所述喷嘴盖包围; 形成在喷嘴单元内的喷嘴，与喷嘴单元间隔开并被喷嘴单元包围; 以及形成在所述喷嘴帽的顶部并用于微小移动的转印单元，其中在所述喷嘴单元和所述喷射探针之间的空间中供应的焊膏沿着所述喷射探针以液滴形式喷射。

公开(公告)号：US20130292457A1

公开(公告)日：2013-11-07

申请号：US13554006

申请日：2012-07-20

Applicant: Hyun Jung Lee ,  Young Ju Lee ,  Yun Bog Kim ,  Seon Young Myoung ,  Suk Jin Ham ,  Seong Chan Park

Inventor： Hyun Jung Lee ,  Young Ju Lee ,  Yun Bog Kim ,  Seon Young Myoung ,  Suk Jin Ham ,  Seong Chan Park

IPC: B23K35/02 ,  B23K1/00

CPC classification number: B23K35/0244 ,  B23K3/0623 ,  B23K3/08 ,  B23K3/087 ,  B23K35/0222 ,  B23K35/0227 ,  Y10T428/24174

Abstract: Disclosed herein are a solder sheet and a soldering method using the same. The solder sheet includes: a plurality of solder rods arranged to have a uniform height h and an area density N; and a support having an adhesive formed on one surface thereof and supporting the plurality of solder rods such that one end of each of the plurality of solder rods is attached to be perpendicular to the surface on which the adhesive is formed. Solder bumps can be formed on soldering portions of the substrate by using the solder sheet through a single process without a mask, and thus, the process can be simplified, costs can be reduced, and a defect rate can be lowered, thereby enhancing reliability.

Abstract translation: 这里公开了一种焊料片和使用其的焊接方法。 焊料片包括：多个焊料棒，其布置成具有均匀的高度h和面积密度N; 以及具有在其一个表面上形成的粘合剂并且支撑多个焊料棒的支撑件，使得多个焊料棒中的每一个的一端附接成垂直于其上形成有粘合剂的表面。 可以通过在没有掩模的情况下通过单个工艺使用焊料片而在基板的焊接部分上形成焊料凸块，因此可以简化工艺，可以降低成本，并且可以降低缺陷率，从而提高可靠性。

公开(公告)号：US20130210811A1

公开(公告)日：2013-08-15

申请号：US13696400

申请日：2011-05-04

Applicant: Je Ho Ryu ,  Shin Ae Kim ,  Keun Ho Ryu ,  Jae Sun Kim ,  Nam Ho Kim ,  Hye Young Han ,  Yong Hyuk Kim ,  Won-No Youn ,  Yoon-Jung Lee ,  Hyun Joo Son ,  Bong-Yong Lee ,  Sung Hoon Park ,  Ju Young Lee ,  Hyun Jung Lee ,  Hoe Chul Jung ,  Young Ah Shin ,  Jung A Lee ,  Bo Ram Lee ,  Joon Ho Sa

Inventor： Je Ho Ryu ,  Shin Ae Kim ,  Keun Ho Ryu ,  Jae Sun Kim ,  Nam Ho Kim ,  Hye Young Han ,  Yong Hyuk Kim ,  Won-No Youn ,  Yoon-Jung Lee ,  Hyun Joo Son ,  Bong-Yong Lee ,  Sung Hoon Park ,  Ju Young Lee ,  Hyun Jung Lee ,  Hoe Chul Jung ,  Young Ah Shin ,  Jung A Lee ,  Bo Ram Lee ,  Joon Ho Sa

IPC: C07D401/04 ,  C07D403/14 ,  C07D403/04 ,  C07D401/14 ,  C07D405/14

CPC classification number: C07D401/04 ,  C07D213/81 ,  C07D239/557 ,  C07D401/06 ,  C07D401/12 ,  C07D401/14 ,  C07D403/04 ,  C07D403/14 ,  C07D405/12 ,  C07D405/14

Abstract: Provided are picolinamide and pyrimidine-4-carboxamide compounds, a method for preparing the same, a pharmaceutical composition containing the same, and a medical use using the compound as an agent for preventing, regulating, and treating diseases related to regulation of glucocorticoids by using selective inhibitory activity of the compound for an 11β-HSD1 enzyme. The picolinamide and pyrimidine-4-carboxamide compounds of the present invention are selective inhibitors of human-derived 11β-HSD1 enzymes, and are useful in an agent for preventing, regulating, and treating diseases related to glucocorticoid regulation in which human-derived 11β-HSD1 enzymes are involved, for example, metabolic syndromes such as, type 1 and type 2 diabetes, diabetes later complications, latent autoimmune diabetes adult (LADA), insulin tolerance syndromes, obesity, impaired glucose tolerance (IGT), impaired fasting glucose (IFG), damaged glucose tolerance, dyslipidemia, atherosclerosis, hypertension, etc.

Abstract translation: 提供了吡啶酰胺和嘧啶-4-甲酰胺化合物，其制备方法，含有该组合物的药物组合物，以及使用该化合物作为预防，调节和治疗与糖皮质激素调节有关的疾病的药物的用途 化合物对11beta-HSD1酶的选择性抑制活性。 本发明的吡啶酰胺和嘧啶-4-甲酰胺化合物是人源性11beta-HSD1酶的选择性抑制剂，可用于预防，调节和治疗与糖皮质激素调节相关的疾病的药剂，其中人源性11β- 涉及HSD1酶，例如代谢综合征，如1型和2型糖尿病，糖尿病后期并发症，潜伏性自身免疫性糖尿病成年（LADA），胰岛素耐受综合征，肥胖症，葡萄糖耐量异常（IGT），空腹血糖受损（IFG ），葡萄糖耐量受损，血脂异常，动脉粥样硬化，高血压等。