公开(公告)号：US06310360B1

公开(公告)日：2001-10-30

申请号：US09358731

申请日：1999-07-21

Applicant: Stephen R. Forrest ,  Mark E. Thompson ,  Marc A. Baldo

Inventor： Stephen R. Forrest ,  Mark E. Thompson ,  Marc A. Baldo

IPC: H01L5100

CPC classification number: H01L51/5096 ,  H01L51/0059 ,  H01L51/0062 ,  H01L51/0081 ,  H01L51/0084 ,  H01L51/0085 ,  H01L51/0088 ,  H01L51/5012 ,  H01L51/5016 ,  H01L51/5028 ,  H01L2251/308

Abstract: Organic light emitting devices are described wherein the emissive layer comprises a host material containing a fluorescent or phosphorescent emissive molecule, which molecule is adapted to luminesce when a voltage is applied across the heterostructure, wherein an intersystem crossing molecule of optical absorption spectrum matched to the emission spectrum of the emissive molecule enhances emission efficiency.

Abstract translation: 描述了有机发光器件，其中发射层包括含有荧光或磷光发射分子的主体材料，该分子适于在跨异质结构施加电压时发光，其中光学吸收光谱的跨系统交叉分子与发射 发射分子的光谱提高了发射效率。

公开(公告)号：US06274980B1

公开(公告)日：2001-08-14

申请号：US09192316

申请日：1998-11-16

Applicant: Paul E. Burrows ,  Stephen R. Forrest

Inventor： Paul E. Burrows ,  Stephen R. Forrest

IPC: H01J162

CPC classification number: H01L27/32 ,  H01L25/046 ,  H01L51/5203 ,  H01L51/5278 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An organic light emitting device (OLED) which emits high intensity light is formed as a stack of individual OLEDs simultaneously emitting light of the same color.

Abstract translation: 发射高强度光的有机发光器件（OLED）形成为同时发射相同颜色的光的单个OLED的堆叠。

公开(公告)号：US06232714B1

公开(公告)日：2001-05-15

申请号：US09291188

申请日：1999-04-14

Applicant: Zilan Shen ,  Stephen R. Forrest ,  Paul Burrows

Inventor： Zilan Shen ,  Stephen R. Forrest ,  Paul Burrows

IPC: H01J6304

CPC classification number: H01L51/5036 ,  H01L27/3209 ,  H01L51/5262

Abstract: Optical cavities in a stacked organic light emitting device (SOLEDs) can shift or attenuate the light emitted by the individual organic light emitting devices (OLEDs) in the stack. Interference caused by reflections within the stack, absorption, positioning of the light source, and the polarization of the emitted light can all determine how the spectra of the emitted light are affected by the SOLED structure. A detailed model that provides a good fit to measured SOLED emissions can be used to predict how a SOLED will affect light emitted by OLEDs. As a result, SOLED geometries that will optimize color saturation and external quantum efficiency can be predicted.

Abstract translation: 层叠的有机发光器件（SOLED）中的光学腔可以移动或衰减由堆叠中的各个有机发光器件（OLED）发射的光。 由堆叠内的反射引起的干扰，光源的吸收，定位以及发射的光的偏振都可以确定发射光的光谱如何受到SOLED结构的影响。 可以使用提供与测量的SOLED排放量相适应的详细模型来预测SOLED如何影响OLED发出的光。 因此，可以预测将优化色饱和度和外部量子效率的SOLED几何形状。

公开(公告)号：US6166489A

公开(公告)日：2000-12-26

申请号：US153349

申请日：1998-09-15

Applicant: Mark Thompson ,  Stephen R. Forrest ,  Gong Gu

Inventor： Mark Thompson ,  Stephen R. Forrest ,  Gong Gu

IPC: H01L27/32 ,  H01L51/50 ,  H01J1/62

CPC classification number: H01L27/3209 ,  H01L27/3211 ,  H01L51/5036

Abstract: Light emitting devices including at least one pixel comprising a first light emitting stack and a second light emitting stack placed side-by-side. The first and second light emitting stacks each comprise a first OLED and a second OLED over the first OLED. The first light emitting stack further includes a downconversion layer under the first OLED. Together, the first and second stacks are capable of emitting any visible color of light.

Abstract translation: 包括至少一个像素的发光器件包括并排设置的第一发光堆叠和第二发光堆叠。 第一和第二发光堆每个包括在第一OLED上的第一OLED和第二OLED。 第一发光叠层还包括在第一OLED下面的下变换层。 一起，第一和第二堆叠能够发出任何可见的光线。

公开(公告)号：US5172385A

公开(公告)日：1992-12-15

申请号：US665429

申请日：1991-03-05

Applicant: Stephen R. Forrest ,  Franky F. So ,  De Y. Zang

Inventor： Stephen R. Forrest ,  Franky F. So ,  De Y. Zang

IPC: C07D487/00 ,  C30B23/02 ,  G02B6/122 ,  G02B6/126 ,  G02B6/13 ,  G02B6/42 ,  G02B27/28 ,  G02F1/015 ,  H01L27/15 ,  H01L27/30 ,  H01L31/10 ,  H01L51/00 ,  H01L51/05 ,  H01L51/30 ,  H01L51/40 ,  H01S5/00 ,  H01S5/026 ,  H01S5/50

CPC classification number: H01L27/30 ,  C30B23/02 ,  C30B29/54 ,  G02B6/1221 ,  G02B6/126 ,  G02B6/13 ,  G02B6/42 ,  H01L27/305 ,  H01L51/0053 ,  H01L51/42 ,  H01S5/026 ,  H01S5/5036 ,  H01L51/0008 ,  H01L51/0012 ,  H01S5/0064 ,  Y02E10/549

Abstract: Certain crystalline organic semiconductor compounds, such as 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA), when deposited by an ultrahigh vacuum process of organic molecular beam deposition, form highly ordered "quasi-epitaxial" films (32). Due to asymmetries in the molecular crystal structure of such compounds, the ordering of the films results in giant asymmetries in their dielectric properties. Such large dielectric asymmetries permit the construction of a variety of devices, including optical isolators (38), optically isolated lasers (48), optical isolated optical amplifiers (64), polarization-selective photodiodes (76), and metal-organic-inorganic semiconductor-metal detectors, among others.

公开(公告)号：US4990989A

公开(公告)日：1991-02-05

申请号：US464505

申请日：1990-01-12

Applicant: Mahmoud A. ElHamamsy ,  Stephen R. Forrest ,  John R. Zuber

Inventor： Mahmoud A. ElHamamsy ,  Stephen R. Forrest ,  John R. Zuber

IPC: H01L31/0216 ,  H01L31/0224 ,  H01L31/105

CPC classification number: H01L31/022408 ,  H01L31/02161 ,  H01L31/022416 ,  H01L31/105

Abstract: An InGaAs photodiode is described in which a double layer of silicon nitride on the front surface serves several functions; both layers passivate the surface; an opening in the lower layer provides a diffusion mask for forming the p-n junction; and a narrower opening in the upper silicon nitride layer provides a deposition mask for forming a restricted area contact. In order to reduce strain near the junction, and hence reduce leakage currents and enhance reliability, the contact geometry has a narrow pedestal portion which contacts the surface in a zone remote from the junction edges and has a wider cap portion which is formed on the pedestal portion to seal the surface from the introduction of contaminants. The photodiode may be back-illuminated or front-illuminated.

Abstract translation: 描述了InGaAs光电二极管，其中前表面上的双层氮化硅具有若干功能; 两层钝化表面; 下层的开口提供用于形成p-n结的扩散掩模; 并且上部氮化硅层中的较窄的开口提供用于形成限制区域接触的沉积掩模。 为了减小接头附近的应变，并且因此减小泄漏电流并增强可靠性，接触几何形状具有窄的基座部分，其在远离接合边缘的区域中接触表面，并且具有形成在基座上的较宽的盖部分 部分以密封表面免受污染物的引入。 光电二极管可以是背照式或前照式的。

公开(公告)号：US4953155A

公开(公告)日：1990-08-28

申请号：US146062

申请日：1988-01-20

Applicant: Gregory L. Tangonan ,  Vincent L. Jones ,  Stephen R. Forrest

Inventor： Gregory L. Tangonan ,  Vincent L. Jones ,  Stephen R. Forrest

IPC: H03K17/78 ,  H03K17/693 ,  H04B10/02 ,  H04Q3/52

CPC classification number: H04L12/5696

Abstract: An optoelectronic crossbar switch 50 for selectively connecting signals on a plurality of optical fiber channels 52 to a given number of output receivers 30-36. Each optical fiber channel is split into a different number of optical fibers 56(a-h) which are arranged into an array having a plurality of rows and columns. Each row contains a fiber from each channel. A current summation network 58 is provided for each row and advantageously employs a plurality of selectively activatable detectors 60-74. The detectors are held in their open circuit state via a CMOS multiplexer 80 so as to minimize crosstalk between addressed and nonaddressed detectors. The switch 50 construction also minimizes the number of required components.

Abstract translation: 用于选择性地将多个光纤通道52上的信号连接到给定数量的输出接收器30-36的光电交叉开关50。 每个光纤通道被分成不同数量的光纤56（a-h），其布置成具有多个行和列的阵列。 每行包含每个通道的光纤。 为每行提供电流求和网络58，并有利地使用多个可选择性激活的检测器60-74。 检测器通过CMOS多路复用器80保持在开路状态，以便最小化寻址和非寻址检测器之间的串扰。 开关50结构还使所需部件的数量最小化。

公开(公告)号：US4894703A

公开(公告)日：1990-01-16

申请号：US767613

申请日：1985-08-20

Applicant: Mahmoud A. E. Hamamsy ,  Stephen R. Forrest ,  John R. Zuber

Inventor： Mahmoud A. E. Hamamsy ,  Stephen R. Forrest ,  John R. Zuber

IPC: H01L31/0216 ,  H01L31/0224 ,  H01L31/105

CPC classification number: H01L31/02161 ,  H01L31/022408 ,  H01L31/022416 ,  H01L31/105

Abstract: A back-illuminated InGaAs photodiode is described in which a double layer of silicon nitride on the front surface serves several functions; both layers passivate the surface; an opening in the lower layer provides a diffusion mask for forming the p-n junction; and a narrower opening in the upper silicon nitride layer provides a deposition mask for forming a restricted area contact. In order to reduce strain near the junction, and hence reduce leakage currents and enhance reliability, the contact geometry has a narrow pedestal portion which contacts the surface in a zone remote from the junction edges and has a wider cap portion which is formed on the pedestal portion to seal the surface from the introduction of contaminants.

Abstract translation: 描述了背照式InGaAs光电二极管，其中前表面上的双层氮化硅具有若干功能; 两层钝化表面; 下层的开口提供用于形成p-n结的扩散掩模; 并且上部氮化硅层中的较窄的开口提供用于形成限制区域接触的沉积掩模。 为了减小接头附近的应变，并且因此减小泄漏电流并增强可靠性，接触几何形状具有窄的基座部分，其在远离接合边缘的区域中接触表面，并且具有形成在基座上的较宽的盖部分 部分以密封表面免受污染物的引入。

公开(公告)号：US4771325A

公开(公告)日：1988-09-13

申请号：US700441

申请日：1985-02-11

Applicant: Julian Cheng ,  Bernard C. DeLoach, Jr. ,  Stephen R. Forrest

Inventor： Julian Cheng ,  Bernard C. DeLoach, Jr. ,  Stephen R. Forrest

IPC: H01L27/14 ,  H01L27/144 ,  H01L27/146 ,  H01L31/10 ,  H01L31/105 ,  H01L33/00

CPC classification number: H01L31/105 ,  H01L27/1443

Abstract: An integrated photodetector-amplifier is described which is planar and exhibits excellent circuit characteristics including low input capacitance, high speed, and high sensitivity. Also, certain self-alignment features and a planar technology made fabrication of the circuits simpler and easier than most such circuits.

Abstract translation: 描述了一种平面的集成光电检测器 - 放大器，并且具有包括低输入电容，高速度和高灵敏度的优异的电路特性。 此外，某些自对准特征和平面技术使得电路的制造比大多数这样的电路更简单和容易。

公开(公告)号：US4611385A

公开(公告)日：1986-09-16

申请号：US602700

申请日：1984-04-23

Applicant: Stephen R. Forrest ,  Martin L. Kaplan ,  Paul H. Schmidt

Inventor： Stephen R. Forrest ,  Martin L. Kaplan ,  Paul H. Schmidt

IPC: H01L51/42 ,  C07D471/00 ,  G02B6/30 ,  G02B6/34 ,  G02B6/42 ,  H01L21/66 ,  H01L27/14 ,  H01L29/45 ,  H01L51/00 ,  H01L51/30 ,  H01L29/28

CPC classification number: H01L51/4213 ,  G02B6/12007 ,  G02B6/30 ,  G02B6/42 ,  G02B6/4246 ,  H01L29/452 ,  H01L51/0587 ,  G02B6/29319 ,  H01L51/0053 ,  Y02E10/549

Abstract: The use of an organic material having a conjugated ring system such as 3,4,9,10-perylenetetracarboxylic dianhydride interfaced with a semiconductor material such as silicon yields quite acceptable rectifying properties. These properties are used to test the suitability of the substrate during processing. Additionally, these materials upon irradiation change refractive index, allowing production of optical devices such as gratings. The combination of electrical and optical devices formed using these organic materials also allows relatively simple fabrication of integrated opto-electronic structures.

Abstract translation: 使用具有共轭环系的有机材料，例如与诸如硅之类的半导体材料接合的3,4,9,10-苝四羧酸二酐产生相当可接受的整流性能。 这些性质用于测试处理过程中基材的适用性。 此外，这些材料在照射时改变折射率，允许制造诸如光栅的光学装置。 使用这些有机材料形成的电气和光学器件的组合也允许相对简单地制造集成的光电结构。