摘要:
A composition for forming a ferroelectric thin film includes: a PZT sol-gel solution including at least one of: a whole or partial hydrolysate of a lead precursor and a whole or partial hydrolyzed and polycondensated product thereof; a whole or partial hydrolysate of a zirconium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a zirconium complex having at least one hydroxy ion and at least one non-hydrolyzable ligand; and a whole or partial hydrolysate of a titanium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a titanium complex having at least one hydroxyl ion and at least one non-hydrolyzable ligand; and a Bi2SiO5 sol-gel solution including at least one of: a whole or partial hydrolysate of a silicon precursor and a whole or partial hydrolyzed and polycondensated product thereof, and a resultant obtained by refluxing triphenyl bismuth as a bismuth precursor.
摘要:
Disclosed is an RSA cryptographic processing apparatus capable of performing the fast operating function. A modular multiplication operation or a modular exponentiation operation, i.e., an RSA cryptographic operation, is selectively performed according to a control signal inputted, the modular operation of the data of 512 to 1024 bits is iteratively performed by use of 32-bit operating unit, and the data of 512 to 1024 bits is operated by use of a 32-bit operating unit, thereby minimizing the size of the register storing the data and reducing the size of the cryptographic apparatus, and which the intermediate value generated at the operation process is stored in the internal register instead of the memory, thereby minimizing the times of access to the memory.
摘要:
A ferroelectric capacitor having a three-dimensional structure, a nonvolatile memory device having the same, and a method of fabricating the same are provided. The ferroelectric capacitor may include a trench-type lower electrode, at least one layer formed around the lower electrode, a ferroelectric layer (PZT layer) formed on the lower electrode and the at least one layer and an upper electrode formed on the ferroelectric layer. The at least one layer may be at least one insulating interlayer and the at least one layer may also be at least one diffusion barrier layer. The at least one layer may be formed of an insulating material excluding SiO2 or may have a perovskite crystal structure excluding Pb.
摘要:
A wireless communication medium includes an antenna, an analog signal processor, a digital signal processor, and a central processing unit & logic module. The antenna transmits and receives a signal to and from an external apparatus. The analog signal processor converts an analog signal to a digital signal, and converts a digital signal to an analog signal. The digital signal processor demodulates the digital signal, detects the start and end of data, and generates a first control signal for determining whether data is transmitted to the external apparatus and a second control signal for perceiving the end of data, blocking the reception of data, modulating data, and determining whether modulated data is transmitted to the external apparatus. The central processing unit & logic module processes data received from and transmitted to the external apparatus. Accordingly, an efficiency of processing a RF signal can be improved.
摘要:
A sensor network communication system interworking with a BWA communication system and a communication method therefor are provided. In a method for measuring a predetermined target in the sensor network communication system interworking with the BWA communication system, a mobile station or a server sends a measurement request for the predetermined target to a local controller over the BWA communication system. The local controller sends the measurement request to a predetermined sensor and actuator over a wireless communication protocol. The sensor and actuator measures the predetermined target and sends the measurement value to the local controller. The local controller sends a measurement result message based on the measurement value to the mobile station or the server.
摘要:
A ferroelectric capacitor and a method of manufacturing the same are provided, wherein the ferroelectric capacitor of a semiconductor device, which sequentially includes a lower electrode, a ferroelectric layer, and an upper electrode on a conductive layer connected to a transistor formed on a semiconductor substrate, includes an oxidation preventing layer between the conductive layer and the lower electrode. The oxidation preventing layer prevents the conductive layer from being oxidized during high-temperature heat treatment of the ferroelectric layer. Accordingly, the oxidation resistivity of the interfaces of the conductive layer, used as a storage node, and the lower electrode, which faces the conductive layer, increases, so a temperature at which a ferroelectric thin layer is formed can be also increased. Consequently, a ferroelectric thin layer having excellent characteristics may be obtained.
摘要:
A fingerprint sensor for sensing a fingerprint by converting pressure applied to a piezoelectric membrane into an electrical signal is provided, wherein the fingerprint sensor having an aggregate of piezoelectric devices includes: a substrate; a lower electrode formed on the substrate; a piezoelectric membrane formed on the lower electrode; an upper electrode formed on the piezoelectric membrane; a pressuring portion formed on the upper electrode for changing a quantity of charge on the piezoelectric membrane due to pressure exerted by contact of a fingerprint; and a non-conductive layer formed on the lower electrode for supporting and exposing the pressuring portion. Thus, a fingerprint sensor having a simple structure is provided, which is able to precisely sense fingerprint information utilizing a piezoelectric phenomenon. The fingerprint sensor may be applied to systems for identifying persons' identities in public institutions and private enterprises, and in individuals' portable systems.
摘要:
In a capacitor of a semiconductor device, a semiconductor memory device including the capacitor, and a method of operating the semiconductor memory device, the capacitor includes a lower electrode, a dielectric layer stacked on the lower electrode, the dielectric layer including a phase-transition layer capable of exhibiting two different resistance characteristics depending on whether an insulating property thereof has been changed, and an upper electrode stacked on the dielectric layer.
摘要:
In an electronic device, and a method of manufacturing the same, the electronic device includes a first substrate, a first lower capacitor on the first substrate, a first lower switching element on the first lower capacitor, and a second substrate on the first lower switching element. The electronic device may further include a second lower switching element which is isolated from the first lower capacitor, and an upper capacitor on the second substrate, the lower electrode of the upper capacitor being connected to the second lower switching element.
摘要:
Disclosed is a home zone service method for assigning a specified zone to a mobile telephone subscriber and charging the subscriber at different billing rated accordingly as the subscriber makes a telephone call inside or outside the zone. According to the home zone service method, a zone which is defined by a first measurement value and a second measurement value as a sub-sector is determined by measuring a round trip delay from a fixed location in a sector of a cell to the neighbor base stations to which the subscriber belongs, so that a predetermined home zone database including the first value and the second value is prepared. The round trip delay is measured from a specified signal if a portable mobile terminal of the subscriber generates a request signal to establish a call connection. Then, it is determined whether the subscriber is located inside the sub-sector if the measured round trip delay falls between the first value and the second value of the home zone database.