公开(公告)号：US20090291549A1

公开(公告)日：2009-11-26

申请号：US12097418

申请日：2006-11-24

申请人： Hideaki Yamasaki ,  Koji Akiyama ,  Kazuyoshi Yamazaki ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Koji Akiyama ,  Kazuyoshi Yamazaki ,  Yumiko Kawano

IPC分类号： H01L21/26 ,  H01L21/28

CPC分类号： C23C16/16 ,  C23C8/16 ,  C23C8/36 ,  C23C16/56 ,  H01L21/28079 ,  H01L21/28176 ,  H01L29/495 ,  H01L29/517

摘要： On a Si substrate 1, i.e., a semiconductor substrate, a gate insulating film 2 is formed, and then a W-based film 3a is formed on the gate insulating film 2 by CVD using a film forming gas including W(CO)6 gas. Then, the film is oxidized under existence of a reducing gas, and the W in the W-based film 3a is not oxidized but only C is selectively oxidized to reduce the concentration of C contained in the W-based film 3a. Then, after performing heat treatment as needed, resist coating, patterning, etching and the like are performed, and, an impurity diffused region 10 is formed by ion implantation and the like, and a semiconductor device having a MOS structure is formed.

摘要翻译： 在Si衬底1即半导体衬底上形成栅极绝缘膜2，然后通过CVD使用包含W（CO）6气体的成膜气体在栅极绝缘膜2上形成W基膜3a 。 然后，在存在还原气体的情况下，膜被氧化，W基膜3a中的W不被氧化，只有选择性地氧化C以降低W基膜3a中所含的C浓度。 然后，根据需要进行热处理后，进行抗蚀剂涂布，图案化，蚀刻等，通过离子注入等形成杂质扩散区域10，形成具有MOS结构的半导体器件。

公开(公告)号：US07582544B2

公开(公告)日：2009-09-01

申请号：US11608504

申请日：2006-12-08

申请人： Isao Gunji ,  Yumiko Kawano

发明人： Isao Gunji ,  Yumiko Kawano

IPC分类号： H01L21/36

CPC分类号： H01L21/28562 ,  C23C16/16 ,  C23C16/18 ,  C23C16/34 ,  C23C16/452 ,  C23C16/45534 ,  C23C16/45548 ,  C23C16/45557 ,  C23C16/46

摘要： A film forming method, for depositing a thin film on a surface of a substrate mounted on a mounting table disposed in a vacuum processing chamber, includes an adsorption process for adsorbing a film forming material on the substrate by introducing a source gas into the processing chamber; and a reaction process for carrying out a film forming reaction, after the adsorption process, by introducing an energy transfer gas into the processing chamber and supplying thermal energy to the film forming material adsorbed on the substrate. By repeating the above process, the thin film is formed on the substrate in a layer-by-layer manner.

摘要翻译： 一种薄膜形成方法，用于在安装在设置在真空处理室中的安装台上的基板的表面上沉积薄膜，包括通过将源气体引入处理室中而将成膜材料吸附在基板上的吸附工艺 ; 以及在吸附过程之后，通过将能量转移气体引入处理室并向吸附在基板上的成膜材料提供热能的反应方法进行成膜反应。 通过重复上述处理，薄膜以层叠的方式形成在基板上。

公开(公告)号：US20090140353A1

公开(公告)日：2009-06-04

申请号：US12083962

申请日：2006-10-24

申请人： Hideaki Yamasaki ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Yumiko Kawano

IPC分类号： H01L29/78 ,  C23C16/54 ,  H01L21/768

CPC分类号： C23C16/34 ,  C23C16/45523 ,  C23C16/56 ,  H01L21/28194 ,  H01L21/28556 ,  H01L29/517 ,  H01L29/518

摘要： The present invention is a method of film deposition that comprises a film-depositing step of supplying a high-melting-point organometallic material gas and a nitrogen-containing gas to a processing vessel that can be evacuated, so as to deposit a thin film of a metallic compound of a high-melting-point metal on a surface of an object to be processed placed in the processing vessel. A partial pressure of the nitrogen-containing gas during the film-depositing step is 17% or lower, in order to increase carbon density contained in the thin film.

摘要翻译： 本发明是一种薄膜沉积方法，该方法包括一个成膜步骤，该方法是向可抽真空的处理容器提供高熔点有机金属材料气体和含氮气体，从而沉积一层薄膜 处理容器内的待处理物体表面上的高熔点金属的金属化合物。 为了提高薄膜中所含的碳密度，在成膜步骤中含氮气体的分压为17％以下。

公开(公告)号：US07419702B2

公开(公告)日：2008-09-02

申请号：US10814768

申请日：2004-03-31

申请人： Kazuhito Nakamura ,  Cory Wajda ,  Enrico Mosca ,  Yumiko Kawano ,  Gert Leusink ,  Fenton R. McFeely ,  Sandra G. Malhotra

发明人： Kazuhito Nakamura ,  Cory Wajda ,  Enrico Mosca ,  Yumiko Kawano ,  Gert Leusink ,  Fenton R. McFeely ,  Sandra G. Malhotra

IPC分类号： C23C16/00 ,  B05D3/04

CPC分类号： C23C16/4581 ,  C23C16/16

摘要： A method for processing a substrate on a ceramic substrate heater in a process chamber. The method includes forming a protective coating on the ceramic substrate heater in the process chamber and processing a substrate on the coated substrate heater. The processing can include providing a substrate to be processed on the coated ceramic substrate heater, performing a process on the substrate by exposing the substrate to a process gas, and removing the processed substrate from the process chamber.

摘要翻译： 一种在处理室中的陶瓷基板加热器上处理基板的方法。 该方法包括在处理室中的陶瓷基板加热器上形成保护涂层，并对涂覆的基板加热器上的基板进行处理。 该处理可以包括在被涂覆的陶瓷基板加热器上提供待处理的基板，通过将基板暴露于工艺气体，从处理室中移除经处理的基板，在基板上进行处理。

公开(公告)号：US20080175994A1

公开(公告)日：2008-07-24

申请号：US12019262

申请日：2008-01-24

申请人： Yumiko KAWANO ,  Akinobu Kakimoto ,  Hidekimi Kadokura ,  Shintaro Higashi

发明人： Yumiko KAWANO ,  Akinobu Kakimoto ,  Hidekimi Kadokura ,  Shintaro Higashi

IPC分类号： C23C16/00

CPC分类号： C23C16/409 ,  C23C16/45531 ,  C23C16/45553

摘要： A method is used for forming an SrTiO3 film on a substrate placed and heated inside a process chamber while supplying a gaseous Ti source material, a gaseous Sr source material, and a gaseous oxidizing agent into the process chamber. Sr(C5(CH3)5)2 is used as the Sr source material. The method performs a plurality of cycles to form the SrTiO3 film. Each cycle sequentially includes supplying the gaseous Ti source material into the process chamber and thereby adsorbing it onto the substrate; supplying the gaseous oxidizing agent into the process chamber and thereby decomposing the Ti source material thus adsorbed and forming a Ti-containing oxide film; supplying the gaseous Sr source material into the process chamber and thereby adsorbing it onto the Ti-containing oxide film; and supplying the gaseous oxidizing agent into the process chamber and thereby decomposing the Sr source material thus adsorbed and forming an Sr-containing oxide film.

摘要翻译： 在用于在处理室内放置和加热的衬底上形成SrTiO 3膜的方法，同时将气态Ti源材料，气态Sr源材料和气态氧化剂供应到处理室中 。 作为Sr源材料，使用Sr（C 5 H 3（CH 3）5）2）2。 该方法进行多个循环以形成SrTiO 3膜。 每个循环依次包括将气态Ti源材料供应到处理室中，从而将其吸附到基底上; 将气态氧化剂供应到处理室中，从而分解由此吸附的Ti源材料，并形成含Ti氧化物膜; 将气态Sr源材料供给到处理室中，从而将其吸附到含Ti氧化物膜上; 并将气态氧化剂供给到处理室中，从而分解由此吸附的Sr源材料，并形成含Sr的氧化物膜。

公开(公告)号：US07063871B2

公开(公告)日：2006-06-20

申请号：US10617819

申请日：2003-07-14

申请人： Hideaki Yamasaki ,  Tatsuo Hatano ,  Tsukasa Matsuda ,  Taro Ikeda ,  Kazuhito Nakamura ,  Koumei Matsuzawa ,  Yumiko Kawano ,  Mitsuhiro Tachibana

发明人： Hideaki Yamasaki ,  Tatsuo Hatano ,  Tsukasa Matsuda ,  Taro Ikeda ,  Kazuhito Nakamura ,  Koumei Matsuzawa ,  Yumiko Kawano ,  Mitsuhiro Tachibana

IPC分类号： C23C16/16

CPC分类号： C23C16/16

摘要： A metal CVD process includes a step (A) of introducing a gaseous source material containing a metal carbonyl compound into a process space adjacent to a surface of a substrate to be processed in such a manner that the metal carbonyl compound has a first partial pressure, and a step (B) of depositing a metal film on the surface of the substrate by introducing a gaseous source material containing the metal carbonyl compound into the process space in such a mater that the metal carbonyl compound has a second, smaller partial pressure. The step (A) is conducted such that there is caused no substantial deposition of the metal film on the substrate.

摘要翻译： 金属CVD法包括将含有羰基金属化合物的气态源材料以与金属羰基化合物具有第一分压的方式相连接的待处理基板的表面的工艺空间引入的工序（A） 以及在金属羰基化合物具有第二较小分压的情况下，通过将含有羰基金属化合物的气态源材料引入到工艺空间中，在基板的表面上沉积金属膜的工序（B）。 进行步骤（A），使得金属膜不会在基板上实质上沉积。

公开(公告)号：US20050227441A1

公开(公告)日：2005-10-13

申请号：US10830804

申请日：2004-03-31

申请人： Kazuhito Nakamura ,  Hideaki Yamasaki ,  Yumiko Kawano ,  Gert Leusink ,  Fenton McFeely ,  John Yurkas ,  Vijay Narayanan

发明人： Kazuhito Nakamura ,  Hideaki Yamasaki ,  Yumiko Kawano ,  Gert Leusink ,  Fenton McFeely ,  John Yurkas ,  Vijay Narayanan

IPC分类号： H01L21/28 ,  H01L29/49 ,  H01L29/51 ,  H01L21/336 ,  C30B1/00 ,  H01L21/20 ,  H01L21/3205 ,  H01L21/36 ,  H01L21/44 ,  H01L21/4763

CPC分类号： H01L21/28088 ,  H01L21/28194 ,  H01L29/4966 ,  H01L29/51 ,  H01L29/517

摘要： A method for forming a tantalum-containing gate electrode structure by providing a substrate having a high-k dielectric layer thereon in a process chamber and forming a tantalum-containing layer on the high-k dielectric layer in a thermal chemical vapor deposition process by exposing the substrate to a process gas containing TAIMATA (Ta(N(CH3)2)3(NC(C2H5)(CH3)2)) precursor gas. In one embodiment of the invention, the tantalum-containing layer can include a TaSiN layer formed from a process gas containing TAIMATA precursor gas, a silicon containing gas, and optionally a nitrogen-containing gas. In another embodiment of the invention, a TaN layer is formed on the TaSiN layer. The TaN layer can be formed from a process gas containing TAIMATA precursor gas and optionally a nitrogen-containing gas. A computer readable medium executable by a processor to cause a processing system to perform the method and a processing system for forming a tantalum-containing gate electrode structure are also provided.

摘要翻译： 一种用于形成含钽栅电极结构的方法，其通过在处理室中提供其上具有高k电介质层的衬底，并在热化学气相沉积工艺中通过暴露在高k电介质层上形成含钽层 将衬底加工成含有TAIMATA（Ta（N（CH 3）2）3）（NC（C 2）2）的工艺气体， （CH 3）2））前体气体。 在本发明的一个实施方案中，含钽层可以包括由含有TAIMATA前体气体，含硅气体和任选的含氮气体的工艺气体形成的TaSiN层。 在本发明的另一实施例中，在TaSiN层上形成TaN层。 TaN层可以由含有TAIMATA前体气体和任选的含氮气体的工艺气体形成。 还提供了可由处理器执行以使处理系统执行该方法的计算机可读介质和用于形成含钽栅电极结构的处理系统。

公开(公告)号：US06913996B2

公开(公告)日：2005-07-05

申请号：US10181273

申请日：2001-11-13

申请人： Hideaki Yamasaki ,  Mitsuhiro Tachibana ,  Kazuya Okubo ,  Kenji Suzuki ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Mitsuhiro Tachibana ,  Kazuya Okubo ,  Kenji Suzuki ,  Yumiko Kawano

IPC分类号： C23C16/30 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/76843 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76876 ,  H01L21/76877

摘要： A metal film forming method, includes the steps of (a) (s13, s15) supplying a plural kinds of ingredient gases to a base barrier film (3) in sequence, wherein at least one of the gases includes a metal, and (b) (s14, s16) vacuum-exhausting the ingredient gases of the step (a) or substituting the ingredient gases of the step (a) by an other kind of gas after the ingredient gases of the step (a) are supplied respectively, thereby an extremely thin film (5) of the metal is formed on the base barrier film (3).

摘要翻译： 金属膜形成方法包括以下步骤：（a）（s 13，s 15），其顺序地将多种成分气体供应到基底阻挡膜（3），其中至少一种气体包括金属，以及 （b）（s 14，s 16）对步骤（a）的成分气体进行真空排气，或者在步骤（a）的成分气体为原料气体之后，用另一种气体代替步骤（a）的成分气体 从而在基底阻挡膜（3）上形成极薄的金属薄膜（5）。

公开(公告)号：US20050120955A1

公开(公告)日：2005-06-09

申请号：US11030899

申请日：2005-01-10

申请人： Hideaki Yamasaki ,  Yumiko Kawano ,  Norihiko Yamamoto

发明人： Hideaki Yamasaki ,  Yumiko Kawano ,  Norihiko Yamamoto

IPC分类号： C23C16/16 ,  C23C16/44 ,  C23C16/00

CPC分类号： C23C16/45561 ,  C23C16/16 ,  C23C16/4412

摘要： A film forming unit includes a source vessel for receiving a raw material from which source gas is produced, a processing vessel for applying a film forming process on a semiconductor substrate, a source supply line for supplying the source gas from the source vessel to the processing vessel, a gas exhaust line for exhausting gas from the processing vessel, having a vacuum pump system structured by a turbo molecular pump and a dry pump, and a pre-flow line branching off from the source supply line while bypassing the processing vessel and the turbo molecular pump, and joining to the gas exhaust line. Moreover, the source supply line includes piping having an inner diameter greater than 6.4 mm, and a turbo molecular pump is provided in the pre-flow line.

摘要翻译： 成膜单元包括用于接收源气体的原料的源容器，用于在半导体衬底上施加成膜工艺的处理容器，用于将来自源容器的源气体供给至处理 容器，用于排出来自处理容器的气体的排气管线，具有由涡轮分子泵和干式泵构成的真空泵系统，以及在绕过处理容器的同时从源供给管线分支的预流管线， 涡轮分子泵，并连接到排气管路。 此外，源供应管线包括内径大于6.4mm的管道，并且在预流动管线中设置涡轮分子泵。

公开(公告)号：US20050070100A1

公开(公告)日：2005-03-31

申请号：US10673908

申请日：2003-09-30

申请人： Hideaki Yamasaki ,  Tsukasa Matsuda ,  Atsushi Gomi ,  Tatsuo Hatano ,  Masahito Sugiura ,  Yumiko Kawano ,  Gert Leusink ,  Fenton McFeely ,  Sandra Malhotra

发明人： Hideaki Yamasaki ,  Tsukasa Matsuda ,  Atsushi Gomi ,  Tatsuo Hatano ,  Masahito Sugiura ,  Yumiko Kawano ,  Gert Leusink ,  Fenton McFeely ,  Sandra Malhotra

IPC分类号： C23C16/16 ,  C23C16/44 ,  H01L21/285 ,  H01L21/44

CPC分类号： C23C16/16 ,  H01L21/28556

摘要： A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process includes introducing a process gas containing a metal carbonyl precursor in a process chamber and depositing a metal layer on a substrate. The TCVD process utilizes a short residence time for the gaseous species in the processing zone above the substrate to form a low-resistivity metal layer. In one embodiment of the invention, the metal carbonyl precursor can be selected from at least one of W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12 precursors. In another embodiment of the invention, a method is provided for depositing low-resistivity W layers at substrate temperatures below about 500° C., by utilizing a residence time less than about 120 msec.

摘要翻译： 通过热化学气相沉积（TCVD）方法在金属层上沉积金属层的方法包括在处理室中引入含有羰基金属前驱体的工艺气体并在基底上沉积金属层。 TCVD工艺利用在衬底上方的处理区域中的气态物质的短暂停留时间以形成低电阻率金属层。 在本发明的一个实施方案中，金属羰基前体可以选自W（CO）6，Ni（CO）4，Mo（CO）6，Co 2（CO）8，Rh 4（CO）12，Re 2 （CO）10，Cr（CO）6和Ru 3（CO）12前体）。 在本发明的另一个实施例中，提供了一种通过利用小于约120毫秒的停留时间在低于约500℃的衬底温度下沉积低电阻W层的方法。