公开(公告)号：US20180364591A1

公开(公告)日：2018-12-20

申请号：US16061209

申请日：2016-11-29

Applicant: ASML NETHERLANDS B.V.

Inventor： Robert John SOCHA ,  Arie Jeffrey DEN BOEF ,  Nitesh PANDEY

IPC: G03F7/20 ,  G01N21/956 ,  G01N21/88 ,  G01B11/27

Abstract: A method of adjusting a metrology apparatus, the method including: spatially dividing an intensity distribution of a pupil plane of the metrology apparatus into a plurality of pixels; and reducing an effect of a structural asymmetry in a target on a measurement by the metrology apparatus on the target, by adjusting intensities of the plurality of pixels.

公开(公告)号：US20180267415A1

公开(公告)日：2018-09-20

申请号：US15764617

申请日：2016-09-06

Applicant: ASML Netherlands B.V.

Inventor： Nitesh PANDEY ,  Arie Jeffrey DEN BOEF ,  Heine Melle MULDER ,  Willem Richard PONGERS ,  Paulus Antonius Andreas TEUNISSEN

IPC: G03F9/00

CPC classification number: G03F9/7084 ,  G03F7/70258 ,  G03F9/7049 ,  G03F9/7076 ,  G03F9/7092

Abstract: A topography measurement system comprising a radiation source configured to generate a radiation beam, a spatially coded grating configured to pattern the radiation beam and thereby provide a spatially coded radiation beam, optics configured to form an image of the spatially coded grating at a target location on a substrate, detection optics configured to receive radiation re-fleeted from the target location of the substrate and form an image of the grating image at a second grating, and a detector configured to receive radiation transmitted through the second grating and produce an output signal.

公开(公告)号：US20180088470A1

公开(公告)日：2018-03-29

申请号：US15706625

申请日：2017-09-15

Applicant: ASML NETHERLANDS B.V.

Inventor： Kaustuve BHATTACHARYYA ,  Arie Jeffrey DEN BOEF ,  Martin Jacobus Johan JAK

IPC: G03F7/20 ,  G01B11/24 ,  G01B11/30 ,  G01N21/47

CPC classification number: G03F7/70633 ,  G01B11/24 ,  G01B11/30 ,  G01N21/47 ,  G01N21/88 ,  G02F2202/023 ,  G03F7/705 ,  G03F7/70641

Abstract: A method including evaluating a plurality of substrate measurement recipes for measurement of a metrology target processed using a patterning process, against stack sensitivity and overlay sensitivity, and selecting one or more substrate measurement recipes from the plurality of substrate measurement recipes that have a value of the stack sensitivity that meets or crosses a threshold and that have a value of the overlay sensitivity within a certain finite range from a maximum or minimum value of the overlay sensitivity.

公开(公告)号：US20180024054A1

公开(公告)日：2018-01-25

申请号：US15654813

申请日：2017-07-20

Applicant: ASML Netherlands B.V.

Inventor： Euclid Eberle MOON ,  Arie Jeffrey DEN BOEF

IPC: G01N21/47 ,  G01N21/88 ,  G03F9/00 ,  G03F7/20

CPC classification number: G01N21/47 ,  G01N21/88 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7026

Abstract: Disclosed is a method of measuring a target, an associated substrate, a metrology apparatus and a lithographic apparatus. In one arrangement the target comprises a layered structure. The layered structure has a first target structure in a first layer and a second target structure in a second layer. The method comprises illuminating the target with measurement radiation. Scattered radiation formed by interference between plural predetermined diffraction orders is detected. The predetermined diffraction orders are generated by diffraction of the measurement radiation from the first target structure and are subsequently diffracted from the second target structure. A characteristic of the lithographic process is calculated using the detected scattered radiation formed by the interference between the predetermined diffraction orders.

公开(公告)号：US20170046473A1

公开(公告)日：2017-02-16

申请号：US15339669

申请日：2016-10-31

Applicant: ASML NETHERLANDS B.V.

Inventor： Christophe David FOUQUET ,  Bernardo KASTRUP ,  Arie Jeffrey DEN BOEF ,  Johannes Catharinus Hubertus MULKENS ,  James Benedict KAVANAGH ,  James Patrick KOONMEN ,  Neal Patrick CALLAN

IPC: G06F17/50 ,  G03F7/20 ,  G06N7/00

CPC classification number: G06F17/5081 ,  G03F7/705 ,  G03F7/70525 ,  G03F7/7065 ,  G06F17/5009 ,  G06N7/005 ,  H01L22/20

Abstract: Disclosed herein is a computer-implemented defect prediction method for a device manufacturing process involving processing a portion of a design layout onto a substrate, the method comprising: identifying a hot spot from the portion of the design layout; determining a range of values of a processing parameter of the device manufacturing process for the hot spot, wherein when the processing parameter has a value outside the range, a defect is produced from the hot spot with the device manufacturing process; determining an actual value of the processing parameter; determining or predicting, using the actual value, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the hot spot with the device manufacturing process.

Abstract translation: 这里公开了一种用于设备制造过程的计算机实现的缺陷预测方法，该方法涉及将设计布局的一部分处理到衬底上，所述方法包括：从所述设计布局的所述部分中识别热点; 确定所述热点的装置制造过程的处理参数的值的范围，其中当所述处理参数具有超出所述范围的值时，通过所述装置制造过程从所述热点产生缺陷; 确定处理参数的实际值; 使用设备制造过程从热点产生的缺陷确定或预测使用实际值存在，存在概率，特性或其组合。

公开(公告)号：US20160313656A1

公开(公告)日：2016-10-27

申请号：US15104212

申请日：2014-11-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Youri Johannes Laurentius Maria VAN DOMMELEN ,  Peter David ENGBLOM ,  Lambertus Gerardus Maria KESSELS ,  Arie Jeffrey DEN BOEF ,  Kaustuve BHATTACHARYYA ,  Paul Christiaan HINNEN ,  Marco Johannes Annemarie PIETERS

IPC: G03F7/20

CPC classification number: G03F7/70641 ,  G03F7/70683

Abstract: A method and apparatus for obtaining focus information relating to a lithographic process. The method includes illuminating a target, the target having alternating first and second structures, wherein the form of the second structures is focus dependent, while the form of the first structures does not have the same focus dependence as that of the second structures, and detecting radiation redirected by the target to obtain for that target an asymmetry measurement representing an overall asymmetry of the target, wherein the asymmetry measurement is indicative of focus of the beam forming the target. An associated mask for forming such a target, and a substrate having such a target.

Abstract translation: 一种用于获得与光刻工艺相关的焦点信息的方法和装置。 该方法包括照亮目标，目标具有交替的第一和第二结构，其中第二结构的形式是聚焦依赖的，而第一结构的形式不具有与第二结构相同的焦点依赖性，并且检测 由目标重定向的辐射以为该目标获得表示目标的总体不对称性的不对称测量，其中不对称测量指示形成目标的波束的焦点。 用于形成这种靶的相关掩模和具有这种靶的基片。

公开(公告)号：US20160291481A1

公开(公告)日：2016-10-06

申请号：US15038535

申请日：2014-11-04

Applicant: ASML NETHERLANDS B.V.

Inventor： Hendrik Jan Hidde SMILDE ,  Arie Jeffrey DEN BOEF ,  Omer Abubaker Omer ADAM ,  Martin Jacobus Johan JAK

IPC: G03F7/20

CPC classification number: G03F7/70633

Abstract: A substrate has three or more overlay gratings formed thereon by a lithographic process. Each overlay grating has a known overlay bias. The values of overlay bias include for example two values in a region centered on zero and two values in a region centered on P/2, where P is the pitch of the gratings. Overlay is calculated from asymmetry measurements for the gratings using knowledge of the different overlay bias values and an assumed non-linear relationship between overlay and target asymmetry, thereby to correct for feature asymmetry. The periodic relationship in the region of zero bias and P/2 has gradients of opposite sign. The calculation allows said gradients to have different magnitudes as well as opposite sign. The calculation also provides information on feature asymmetry and other processing effects. This information is used to improve subsequent performance of the measurement process, and/or the lithographic process.

Abstract translation: 衬底具有通过光刻工艺在其上形成的三个或更多个覆盖光栅。 每个覆盖光栅具有已知的叠加偏置。 叠加偏置的值包括例如在以P为中心的区域中的零点和两个值的区域中的两个值，其中P是光栅的间距。 使用不同覆盖偏差值的知识以及覆盖和目标不对称之间的假设非线性关系，对光栅的不对称测量计算叠加，从而校正特征不对称性。 零偏置区域和P / 2区域的周期关系具有相反符号梯度。 该计算允许所述梯度具有不同的幅度以及相反的符号。 该计算还提供了有关特征不对称性和其他处理效果的信息。 该信息用于改进随后的测量过程和/或光刻过程的性能。

公开(公告)号：US20160161863A1

公开(公告)日：2016-06-09

申请号：US14948001

申请日：2015-11-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Arie Jeffrey DEN BOEF ,  Kaustuve BHATTACHARYYA

IPC: G03F7/20 ,  G01B11/24 ,  G01B11/27

Abstract: A method including determining a type of structural asymmetry of the target from measured values of the target, and performing a simulation of optical measurement of the target to determine a value of an asymmetry parameter associated with the asymmetry type. A method including performing a simulation of optical measurement of a target to determine a value of an asymmetry parameter associated with a type of structural asymmetry of the target determined from measured values of the target, and analyzing a sensitivity of the asymmetry parameter to change in a target formation parameter associated with the target. A method including determining a structural asymmetry parameter of a target using a measured parameter of radiation diffracted by the target, and determining a property of a measurement beam of the target based on the structural asymmetry parameter that is least sensitive to change in a target formation parameter associated with the target.

Abstract translation: 一种方法，包括从所述目标的测量值确定所述目标的结构不对称的类型，以及执行所述目标的光学测量的模拟以确定与所述不对称类型相关联的不对称参数的值。 一种方法，包括执行目标的光学测量的模拟以确定与由所述目标的测量值确定的所述目标的结构不对称类型相关联的不对称参数的值，以及分析所述不对称参数在 与目标相关联的目标形成参数。 一种方法，包括使用由所述目标衍射的辐射的测量参数来确定目标的结构不对称参数，以及基于对目标形成参数中的变化最不敏感的所述结构不对称参数来确定所述目标的测量光束的特性 与目标相关联。

公开(公告)号：US20160116849A1

公开(公告)日：2016-04-28

申请号：US14892176

申请日：2014-05-23

Applicant: ASML NETHERLANDS B.V.

Inventor： Hugo Augustinus Joseph CRAMER ,  Arie Jeffrey DEN BOEF ,  Henricus Johannes Lambertus MEGENS ,  Maurits VAN DER SCHAAR ,  Te-Chih HUANG

IPC: G03F7/20

CPC classification number: G03F7/70133 ,  G03F7/70625 ,  G03F7/70683

Abstract: A method of determining a critical-dimension-related property, such as critical dimension (CD) or exposure dose, includes illuminating each of a plurality of periodic targets having different respective critical dimension biases, measuring intensity of radiation scattered by the targets, recognizing and extracting each grating from the image, determining a differential signal, and determining the CD-related property based on the differential signal, the CD biases and knowledge that the differential signal approximates to zero at a 1:1 line-to-space ratio of such periodic targets. Use of the determined CD-related property to control a lithography apparatus in lithographic processing of subsequent substrates. In order to use just two CD biases, a calibration may use measurements on a “golden wafer” (i.e. a reference substrate) to determine the intensity gradient for each of the CD pairs, with known CDs. Alternatively, the calibration can be based upon simulation of the sensitivity of intensity gradient to CD.

Abstract translation: 确定临界尺寸相关性质（例如临界尺寸（CD）或曝光剂量）的方法包括照射具有不同的相应临界尺寸偏差的多个周期性靶标中的每一个，测量由靶标散射的辐射的强度，识别和 从图像中提取每个光栅，确定差分信号，并且基于差分信号确定CD相关属性，CD偏差和差分信号以这样的1：1线间比接近零的知识 定期目标。 使用确定的CD相关属性来控制光刻设备在后续基板的光刻处理中。 为了仅使用两个CD偏移，校准可以使用“金色晶片”（即，参考基底）上的测量来确定具有已知CD的每个CD对的强度梯度。 或者，校准可以基于对CD的强度梯度的灵敏度的模拟。

公开(公告)号：US20160077445A1

公开(公告)日：2016-03-17

申请号：US14787451

申请日：2014-04-25

Applicant: ASML NETHERLANDS B.V.

Inventor： Arie Jeffrey DEN BOEF ,  Simon Gijsbert Josephus MATHIJSSEN ,  Patricius Aloysius Jacobus TINNEMANS

IPC: G03F7/20 ,  G01B11/27

CPC classification number: G03F7/70141 ,  G01B11/272 ,  G03F9/7069 ,  G03F9/7088 ,  G03F9/7092

Abstract: An alignment sensor including an illumination source, such as a white light source, having an illumination grating operable to diffract higher order radiation at an angle dependent on wavelength; and illumination optics to deliver the diffracted radiation onto an alignment grating from at least two opposite directions. For every component wavelength incident on the alignment grating, and for each direction, the zeroth diffraction order of radiation incident from one of the two opposite directions overlaps a higher diffraction order of radiation incident from the other direction. This optically amplifies the higher diffraction orders with the overlapping zeroth orders.

Abstract translation: 一种对准传感器，包括诸如白光源的照明源，具有可操作以以取决于波长的角度衍射高阶辐射的照明光栅; 和照明光学器件，以将衍射辐射从至少两个相反的方向传送到对准光栅上。 对于入射在对准光栅上的每个分量波长，并且对于每个方向，从两个相反方向之一入射的辐射的零级衍射级与从另一方向入射的较高的辐射衍射级重叠。 这种光学放大了具有重叠零级的较高的衍射级。