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    Magnetic Tunnel Junction With Non-Metallic Layer Adjacent to Free Layer
    51.
    发明申请
    Magnetic Tunnel Junction With Non-Metallic Layer Adjacent to Free Layer 有权
    磁性隧道结与非金属层相邻的自由层

    公开(公告)号：US20130334633A1

    公开(公告)日：2013-12-19

    申请号：US13912107

    申请日：2013-06-06

    申请人： Avalanche Technology, Inc.

    发明人： Yuchen Zhou ,  Yiming Huai ,  Zihui Wang ,  Dong Ha Jung

    IPC分类号： H01L43/10

    CPC分类号： H01L43/10 ,  H01L43/08

    摘要： A spin transfer torque magnetic random access memory (STTMRAM) magnetic tunnel junction (MTJ) stack includes layers to which when electric current is applied cause switching of the direction of magnetization of at least one of the layer. The STTMRAM MTJ stack includes a reference layer (RL) with a direction of magnetization that is fixed upon manufacturing of the STTMRAM MTJ stack, a junction layer (JL) formed on top of the RL, a free layer (FL) formed on top of the JL. The FL has a direction of magnetization that is switchable relative to that of the RL upon the flow of electric current through the spin transfer torque magnetic random access memory (STTMRAM) magnetic tunnel junction (MTJ) stack. The STTMRAM MTJ stack further includes a spin confinement layer (SCL) formed on top of the FL, the SCL made of ruthenium.

    摘要翻译： 自旋转移磁力随机存取存储器（STTMRAM）磁性隧道结（MTJ）堆叠包括施加电流的层，导致至少一层的磁化方向的切换。 STTMRAM MTJ堆叠包括具有在制造STTMRAM MTJ堆叠时固定的磁化方向的参考层（RL），形成在RL顶部的结层（JL），形成在RL顶部的自由层（FL） JL。 当电流通过自旋转移磁力随机存取存储器（STTMRAM）磁性隧道结（MTJ）堆叠时，FL具有可相对于RL切换的磁化方向。 STTMRAM MTJ堆叠还包括形成在FL顶部的自旋限制层（SCL），由钌制成的SCL。

    Method and Apparatus for Programming a Spin-Transfer Torque Magnetic Random Access Memory (STTMRAM) Array
    52.
    发明申请
    Method and Apparatus for Programming a Spin-Transfer Torque Magnetic Random Access Memory (STTMRAM) Array 有权
    用于编程旋转转矩磁性随机存取存储器（STTMRAM）阵列的方法和装置

    公开(公告)号：US20130272062A1

    公开(公告)日：2013-10-17

    申请号：US13914396

    申请日：2013-06-10

    申请人： Avalanche Technology, Inc.

    发明人： Yuchen Zhou ,  Ebrahim Abedifard ,  Zihui Wang

    IPC分类号： G11C11/16

    CPC分类号： G11C11/16 ,  G11C11/1659 ,  G11C11/1675

    摘要： A spin-transfer torque memory random access memory (STTMRAM) cell is disclosed comprising a selected magnetic tunnel junction (MTJ) identified to be programmed; a first transistor having a first port, a second port and a gate, the first port of the first transistor coupled to the selected MTJ; a first neighboring MTJ coupled to the selected MTJ through the second port of the first transistor; a second transistor having a first port, a second port, and a gate, the first port of the second transistor coupled to the selected MTJ; a second neighboring MTJ coupled to the selected MTJ through the second port of the second transistor; a first bit/source line coupled to the second end of the selected MTJ; and a second bit/source line coupled to the second end of the first neighboring MTJ and the second end of the second neighboring MTJ.

    摘要翻译： 公开了一种自动转移转矩存储器随机存取存储器（STTMRAM）单元，其包括被识别为被编程的所选择的磁性隧道结（MTJ）; 具有第一端口，第二端口和栅极的第一晶体管，耦合到所选择的MTJ的第一晶体管的第一端口; 通过第一晶体管的第二端口耦合到所选择的MTJ的第一相邻MTJ; 具有第一端口，第二端口和栅极的第二晶体管，耦合到所选择的MTJ的第二晶体管的第一端口; 通过第二晶体管的第二端口耦合到所选择的MTJ的第二相邻MTJ; 耦合到所选MTJ的第二端的第一位/源极线; 以及耦合到第一相邻MTJ的第二端和第二相邻MTJ的第二端的第二位/源极线。

    Nonvolatile Memory Device Including Dual Memory Layers
    54.
    发明公开
    Nonvolatile Memory Device Including Dual Memory Layers 审中-公开

    公开(公告)号：US20240268125A1

    公开(公告)日：2024-08-08

    申请号：US18106159

    申请日：2023-02-06

    申请人： Avalanche Technology, Inc.

    发明人： Zhiqiang Wei ,  Zihui Wang ,  Ebrahim Abedifard ,  Yiming Huai

    IPC分类号： H10B61/00 ,  H01L23/528 ,  H10N50/10

    CPC分类号： H10B61/22 ,  H01L23/5283 ,  H10N50/10

    摘要： The present invention is directed to a nonvolatile memory device including a plurality of first conductive lines extending along a first direction; first and second plurality of second conductive lines extending along a second direction; an array of active regions, each active region having an elongated shape directed along a third direction substantially bisecting an angle formed between the first and second directions and including first and second drains formed at opposite ends thereof; and an array of first memory elements and an array of second memory elements formed at different levels, each first memory element and each second memory element being electrically connected to a respective first drain and a respective second drain, respectively. The first and second plurality of second conductive lines are electrically connected to the array of first memory elements and the array of second memory elements along the second direction, respectively.

    Cross-point MRAM including self-compliance selector
    55.
    发明授权
    Cross-point MRAM including self-compliance selector 有权

    公开(公告)号：US11848039B2

    公开(公告)日：2023-12-19

    申请号：US17227294

    申请日：2021-04-10

    申请人： Avalanche Technology, Inc.

    发明人： Zhiqiang Wei ,  Kimihiro Satoh ,  Woojin Kim ,  Zihui Wang

    IPC分类号： G11C11/16 ,  H10B61/00 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

    CPC分类号： G11C11/161 ,  H10B61/10 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

    摘要： The present invention is directed to a magnetic memory cell including a magnetic tunnel junction (MTJ) memory element and a two-terminal bidirectional selector coupled in series between two conductive lines. The MTJ memory element includes a magnetic free layer; a magnetic reference layer; and an insulating tunnel junction layer interposed therebetween. The two-terminal bidirectional selector includes a bottom electrode; a top electrode; a load-resistance layer interposed between the bottom and top electrodes and comprising a first tantalum oxide; a first volatile switching layer interposed between the bottom and top electrodes and comprising a metal dopant and a second tantalum oxide that has a higher oxygen content than the first tantalum oxide; and a second volatile switching layer in contact with the first volatile switching layer and comprising a third tantalum oxide that has a higher oxygen content than the first tantalum oxide.

    Cross-Point MRAM Including Self-Compliance Selector
    56.
    发明申请
    Cross-Point MRAM Including Self-Compliance Selector 有权

    公开(公告)号：US20220383920A9

    公开(公告)日：2022-12-01

    申请号：US17227294

    申请日：2021-04-10

    申请人： Avalanche Technology, Inc.

    发明人： Zhiqiang Wei ,  Kimihiro Satoh ,  Woojin Kim ,  Zihui Wang

    IPC分类号： G11C11/16 ,  H01L43/08 ,  H01L43/10 ,  H01L27/22 ,  H01L43/02

    摘要： The present invention is directed to a magnetic memory cell including a magnetic tunnel junction (MTJ) memory element and a two-terminal bidirectional selector coupled in series between two conductive lines. The MTJ memory element includes a magnetic free layer; a magnetic reference layer; and an insulating tunnel junction layer interposed therebetween. The two-terminal bidirectional selector includes a bottom electrode; a top electrode; a load-resistance layer interposed between the bottom and top electrodes and comprising a first tantalum oxide; a first volatile switching layer interposed between the bottom and top electrodes and comprising a metal dopant and a second tantalum oxide that has a higher oxygen content than the first tantalum oxide; and a second volatile switching layer in contact with the first volatile switching layer and comprising a third tantalum oxide that has a higher oxygen content than the first tantalum oxide.

    Cross-Point MRAM Including Self-Compliance Selector
    57.
    发明申请
    Cross-Point MRAM Including Self-Compliance Selector 有权

    公开(公告)号：US20210312964A1

    公开(公告)日：2021-10-07

    申请号：US17227294

    申请日：2021-04-10

    申请人： Avalanche Technology, Inc.

    发明人： Zhiqiang Wei ,  Kimihiro Satoh ,  Woojin Kim ,  Zihui Wang

    IPC分类号： G11C11/16 ,  H01L43/08 ,  H01L43/10 ,  H01L27/22 ,  H01L43/02

    摘要： The present invention is directed to a magnetic memory cell including a magnetic tunnel junction (MTJ) memory element and a two-terminal bidirectional selector coupled in series between two conductive lines. The MTJ memory element includes a magnetic free layer; a magnetic reference layer; and an insulating tunnel junction layer interposed therebetween. The two-terminal bidirectional selector includes a bottom electrode; a top electrode; a load-resistance layer interposed between the bottom and top electrodes and comprising a first tantalum oxide; a first volatile switching layer interposed between the bottom and top electrodes and comprising a metal dopant and a second tantalum oxide that has a higher oxygen content than the first tantalum oxide; and a second volatile switching layer in contact with the first volatile switching layer and comprising a third tantalum oxide that has a higher oxygen content than the first tantalum oxide.

    Spin-orbitronics device and applications thereof
    58.
    发明授权
    Spin-orbitronics device and applications thereof 有权

    公开(公告)号：US10008540B2

    公开(公告)日：2018-06-26

    申请号：US15586638

    申请日：2017-05-04

    申请人： Avalanche Technology, Inc.

    发明人： Parviz Keshtbod ,  Xiaobin Wang ,  Kimihiro Satoh ,  Zihui Wang ,  Huadong Gan

    IPC分类号： H01L27/22 ,  H01L43/08

    CPC分类号： H01L27/228 ,  H01L43/08

    摘要： The present invention is directed to a spin-orbitronics device including an array of MTJs with each of the MTJs coupled to a respective one of a plurality of selection transistors; a plurality of transverse polarizing lines with each of the transverse polarizing lines coupled to a row of the MTJs along a first direction; a plurality of word lines with each of the word lines coupled to gates of a row of the selection transistors along a second direction; and a plurality of source lines with each of the source lines coupled to a row of the selection transistors along a direction substantially perpendicular to the second direction. Each MTJ includes a magnetic comparison layer structure having a pseudo-invariable magnetization direction, which is configured to switch between two stable states by passing a comparison current through one of the plurality of transverse polarizing lines formed adjacent to the magnetic comparison layer structure.