公开(公告)号：US10204997B2

公开(公告)日：2019-02-12

申请号：US15560724

申请日：2016-09-21

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Ke Wang ,  Ce Ning

IPC: H01L27/12 ,  H01L29/45 ,  H01L21/02 ,  C23C14/35 ,  H01L21/027 ,  H01L29/66 ,  H01L29/24 ,  H01L29/786 ,  G03F5/16 ,  H01L21/443 ,  G02F1/1343 ,  G02F1/13363 ,  H01L21/77

Abstract: The present application discloses a thin film transistor, a display substrate and display panel having the same, and a fabricating method thereof. The thin film transistor includes a base substrate; an active layer on the base substrate having a channel region, a first electrode contact region, and a second electrode contact region; and a first electrode on a side of the first electrode contact region distal to the base substrate; and a second electrode on a side of the second electrode contact region distal to the base substrate; the first electrode and the second electrode being made of an amorphous carbon material.

公开(公告)号：US20180254328A1

公开(公告)日：2018-09-06

申请号：US15560724

申请日：2016-09-21

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Ke Wang ,  Ce Ning

IPC: H01L29/45 ,  H01L27/12 ,  H01L21/02 ,  H01L21/443 ,  H01L21/027 ,  H01L29/66 ,  H01L29/24 ,  H01L29/786 ,  G03F5/16 ,  C23C14/35

CPC classification number: H01L29/45 ,  C23C14/35 ,  G02F1/13363 ,  G02F1/1343 ,  G03F5/16 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/0274 ,  H01L21/443 ,  H01L21/77 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78633 ,  H01L29/7869

Abstract: The present application discloses a thin film transistor, a display substrate and display panel having the same, and a fabricating method thereof. The thin film transistor includes a base substrate; an active layer on the base substrate having a channel region, a first electrode contact region, and a second electrode contact region; and a first electrode on a side of the first electrode contact region distal to the base substrate; and a second electrode on a side of the second electrode contact region distal to the base substrate; the first electrode and the second electrode being made of an amorphous carbon material.

公开(公告)号：US20180226269A1

公开(公告)日：2018-08-09

申请号：US15717527

申请日：2017-09-27

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jing Feng ,  Seung Jin Choi ,  Fangzhen Zhang ,  Wusheng Li ,  Zhijun Lv ,  Ce Ning ,  Jiushi Wang

IPC: H01L21/4763 ,  H01L21/027 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12 ,  G03F7/38 ,  G03F7/20 ,  G03F7/40 ,  G03F7/00

CPC classification number: H01L21/47635 ,  G03F7/0035 ,  G03F7/20 ,  G03F7/38 ,  G03F7/40 ,  H01L21/0274 ,  H01L21/321 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

Abstract: The disclosure discloses a method for roughening a surface of a metal layer, a thin film transistor, and a method for fabricating the same. The method for roughening the surface of a metal layer includes: forming a first photo-resist layer on the surface of the metal layer, and processing the first photo-resist layer at high temperature; and stripping the first photo-resist layer to roughen the surface of the metal layer.

公开(公告)号：US09799679B2

公开(公告)日：2017-10-24

申请号：US14769422

申请日：2014-10-31

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Ce Ning

IPC: H01L27/12 ,  G02F1/1368 ,  H01L21/77 ,  G02F1/1333 ,  G02F1/1343 ,  G02F1/1362 ,  H01L29/786

CPC classification number: H01L27/124 ,  G02F1/133345 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/134318 ,  G02F2001/136295 ,  G02F2201/121 ,  H01L21/77 ,  H01L27/12 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/7869

Abstract: The present disclosure provides a thin film transistor (TFT) array substrate, its manufacturing method and a display device. The method includes steps of: forming patterns of a common electrode, a common electrode line, a gate line and a data line on a substrate by a single patterning process; forming an insulating layer; forming a pattern of an active layer by a single patterning process; forming a gate insulating layer and forming via-holes corresponding to the gate line, the data line and the active layer in the gate insulating layer by a single patterning process; and forming patterns of a pixel electrode, a gate electrode, a source electrode and a drain electrode by a single patterning process.

公开(公告)号：US09754979B2

公开(公告)日：2017-09-05

申请号：US13703483

申请日：2012-09-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Ce Ning ,  Xuehui Zhang ,  Jing Yang

IPC: H01L29/18 ,  H01L27/12 ,  H01L27/32

CPC classification number: H01L27/1288 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/3248 ,  H01L27/326

Abstract: The embodiments of the invention provide a display device, a thin film transistor, an array substrate and a manufacturing method thereof. The manufacturing method comprises: step A, forming patterns of a source electrode, a drain electrode, a data line and a pixel electrode; step B, forming an active layer and agate insulating layer in order, and forming a via hole in the gate insulating layer for connecting the data line and an external circuit; and step C, forming patterns of a gate electrode, a gate line and a common electrode line, or forming a pattern of a gate electrode, a gate line and a common electrode.

公开(公告)号：US20170148820A1

公开(公告)日：2017-05-25

申请号：US15110416

申请日：2015-10-13

Applicant: BOE Technology Group Co., Ltd.

Inventor： Ce Ning ,  Fangzhen Zhang

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L21/30 ,  H01L21/768

CPC classification number: H01L27/127 ,  H01L21/28 ,  H01L21/30 ,  H01L21/76895 ,  H01L21/84 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/6675 ,  H01L29/66969 ,  H01L29/78663 ,  H01L29/78672 ,  H01L29/78684

Abstract: The present disclosure provides an array substrate and a method of manufacturing the same and a display apparatus in which the array substrate is applied. In one embodiment, the method of manufacturing an array substrate at least includes the steps of: forming a first electrode layer, a metal gate layer and a first layer of non-oxide insulation material, the first layer of non-oxide insulation material being formed on an upper surface of the metal gate layer; forming, by using one patterning process, a pattern including a first electrode and a gate such that, after completion of the patterning process, a first non-oxide insulation layer is further formed on the gate and a first sub-electrode belonging to the first electrode layer is further formed below the gate. This method of manufacturing the array substrate is simple, which facilitates mass production of the array substrate as well as the display apparatus.

公开(公告)号：US09544995B2

公开(公告)日：2017-01-10

申请号：US14761986

申请日：2015-02-10

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Ce Ning ,  Tao Gao

IPC: H05K1/02 ,  H05K1/03 ,  H05K3/06 ,  H05K3/00 ,  H05K3/46

CPC classification number: H05K1/028 ,  H05K1/0306 ,  H05K3/007 ,  H05K3/0097 ,  H05K3/06 ,  H05K3/16 ,  H05K3/467 ,  H05K2201/09781 ,  H05K2203/016 ,  H05K2203/167

Abstract: The present disclosure relates to the technical field of flexible substrate processing, and discloses a flexible substrate attaching method. The flexible substrate attaching method comprises the steps of: pre-fixing a flexible substrate on a carrier substrate with a first fixation structure; forming a thin film on the flexible substrate, and forming a pattern of the thin film via a patterning process; the pattern of the thin film contacting at least a part of the flexible substrate and at least a part of the carrier substrate simultaneously to play the function of consolidating the flexible substrate onto the carrier substrate. In this flexible substrate attaching method, a flexible substrate can be fixed on a carrier substrate and the flexible panel can be detached after the manufacture is completed. The present disclosure further provides a flexible substrate attachment structure.

Abstract translation: 本公开涉及柔性基板加工的技术领域，并且公开了一种柔性基板附着方法。 柔性基板安装方法包括以下步骤：利用第一固定结构将柔性基板预固定在载体基板上; 在柔性基板上形成薄膜，并通过图案化工艺形成薄膜图案; 所述薄膜的图案与所述柔性基板的至少一部分和所述载体基板的至少一部分同时接触，以发挥将所述柔性基板固结到所述载体基板上的功能。 在这种柔性基板安装方法中，可以将柔性基板固定在载体基板上，并且在制造完成之后可以将柔性板分离。 本公开进一步提供了柔性基板附接结构。

公开(公告)号：US20160308061A1

公开(公告)日：2016-10-20

申请号：US15097508

申请日：2016-04-13

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wei Yang ,  Woo Bong Lee ,  Ce Ning ,  Wenlin Zhang

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/66 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02587 ,  H01L21/02631 ,  H01L21/02664 ,  H01L29/24 ,  H01L29/66969

Abstract: A thin film transistor and a fabrication method thereof, and a display device are provided. The thin film transistor comprises an active layer, wherein, a target oxide is formed at a portion of the active layer where an oxygen content is higher than oxygen contents of other portions of the active layer, and a carrier mobility of the target oxide is greater than that of other portions of the active layer.

Abstract translation: 提供薄膜晶体管及其制造方法，以及显示装置。 薄膜晶体管包括有源层，其中，在活性层的氧含量高于活性层的其它部分的氧含量的部分形成目标氧化物，并且目标氧化物的载流子迁移率更大 比活性层的其它部分的厚度大。

公开(公告)号：US09240424B2

公开(公告)日：2016-01-19

申请号：US14127245

申请日：2012-11-21

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Ce Ning ,  Zhijun Lv

IPC: H01L27/12

CPC classification number: H01L27/127 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1288

Abstract: Disclosed are a thin film transistor array substrate and a producing method thereof in the embodiments of the present invention, the producing method comprising: forming an active layer thin film and a conductive layer thin film on a substrate; depositing a source/drain electrode layer thin film on the conductive layer thin film, treating the conductive layer thin film and the source/drain electrode layer thin film using gray tone or half tone masking process, to form at least two data lines, a pixel electrode and source/drain electrodes of the thin film transistor (TFT); after depositing an insulating layer thin film covered the active layer thin film, the source/drain electrodes, the data lines and the pixel electrode, forming a through hole and a gate insulating layer of the TFT on the insulating layer, to form an active layer of the TFT; forming a gate electrode of the TFT and at least two gate scanning lines cross with the data wires.

Abstract translation: 公开了本发明实施例中的薄膜晶体管阵列基板及其制造方法，所述制造方法包括：在基板上形成有源层薄膜和导电层薄膜; 在导电层薄膜上沉积源极/漏极层薄膜，使用灰度色调或半色调掩蔽处理处理导电层薄膜和源极/漏极层薄膜，以形成至少两条数据线，像素 薄膜晶体管（TFT）的电极和源/漏电极; 在沉积覆盖有源层薄膜，源极/漏极，数据线和像素电极的绝缘层薄膜之后，在绝缘层上形成TFT的通孔和栅极绝缘层，以形成有源层 的TFT; 形成TFT的栅极电极和至少两个栅极扫描线与数据线交叉。

公开(公告)号：US20140117372A1

公开(公告)日：2014-05-01

申请号：US14127245

申请日：2012-11-21

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Ce Ning ,  Zhijun Lv

IPC: H01L27/12

CPC classification number: H01L27/127 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1288

Abstract: Disclosed are a thin film transistor array substrate and a producing method thereof in the embodiments of the present invention, the producing method comprising: forming an active layer thin film and a conductive layer thin film on a substrate; depositing a source/drain electrode layer thin film on the conductive layer thin film, treating the conductive layer thin film and the source/drain electrode layer thin film using gray tone or half tone masking process, to form at least two data lines, a pixel electrode and source/drain electrodes of the thin film transistor (TFT); after depositing an insulating layer thin film covered the active layer thin film, the source/drain electrodes, the data lines and the pixel electrode, forming a through hole and a gate insulating layer of the TFT on the insulating layer, to form an active layer of the TFT; forming a gate electrode of the TFT and at least two gate scanning lines cross with the data wires.

Abstract translation: 公开了本发明实施例中的薄膜晶体管阵列基板及其制造方法，所述制造方法包括：在基板上形成有源层薄膜和导电层薄膜; 在导电层薄膜上沉积源极/漏极层薄膜，使用灰度色调或半色调掩蔽处理处理导电层薄膜和源极/漏极层薄膜，以形成至少两条数据线，像素 薄膜晶体管（TFT）的电极和源/漏电极; 在沉积覆盖有源层薄膜，源极/漏极，数据线和像素电极的绝缘层薄膜之后，在绝缘层上形成TFT的通孔和栅极绝缘层，以形成有源层 的TFT; 形成TFT的栅极电极和至少两个栅极扫描线与数据线交叉。